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21. 发明专利

JPH05114366A ION SOURCE 失效
公开(公告)号：JPH05114366A
公开(公告)日：1993-05-07
申请号：JP30225891
申请日：1991-10-21
申请人： NISSIN ELECTRIC CO LTD
发明人： INAMI HIROSHI , INAI YUTAKA , MATSUDA YASUHIRO , FUJIWARA SHUICHI , YAMASHITA TAKATOSHI , MATSUNAGA KOJI
IPC分类号： H01J1/02 , H01J27/02 , H01J37/08
摘要： PURPOSE:To prevent an ion through hole from being incorrectly positioned due to thermal deformation by dividing an electrode plate into a plurarity of pieces and movably dangling them using bars. CONSTITUTION:The electrode plate of a drawer electrode is divided into two or more pieces in the longitudinal direction and each divided electrode piece is movably dangled using the hole with a large diameter of a middle supporting piece 12. This constitution enables thermal expansion and contraction and allows the electrode piece 4 to be thermally deformed to prevent an ion through hole from being incorrectly positioned clue to thermal effects.

22. 发明专利

JPH0135459B2 失效
公开(公告)号：JPH0135459B2
公开(公告)日：1989-07-25
申请号：JP6219783
申请日：1983-04-11
申请人： KOGYO GIJUTSUIN
发明人： MYAUCHI EIZO , ARIMOTO HIROSHI , HASHIMOTO TOSHIO
IPC分类号： H01J1/02 , H01J9/02 , H01J27/26 , H01J37/08

23. 发明专利

JPS61267222A LIQUID METAL ION SOURCE 失效
公开(公告)号：JPS61267222A
公开(公告)日：1986-11-26
申请号：JP10812085
申请日：1985-05-22
申请人： HITACHI LTD
发明人： UMEMURA KAORU , ISHITANI TORU , AIDA TOSHIYUKI , TAMURA HIFUMI
IPC分类号： H01J37/08 , H01J1/02
摘要： PURPOSE:To obtain a liquid metal ion source from which P and P ions can be taken out stably for long term by employing such alloy where the material to be ionized is shown by the composition formula of CuaPbPtc while the atomic % is specified. CONSTITUTION:Assuming (a), (b) and (c) will represent the atomic %, such ionizing material to be shown by CuaPbPtc where 50 and P ions which have been hard to be emitted conventionally can be emitted stably for long term resulting in a liquid metal ion source which can emit P and P ions important in silicon semi-conductor process.

24. 发明专利

JPS60249225A LIQUID METAL ION SOURCE 失效
公开(公告)号：JPS60249225A
公开(公告)日：1985-12-09
申请号：JP10453584
申请日：1984-05-25
申请人： HITACHI LTD
发明人： ISHITANI TOORU , UMEMURA KAORU , KAWANAMI YOSHIMI , TAMURA HIFUMI
IPC分类号： H01J37/08 , H01J1/02 , H01J27/26
摘要： PURPOSE:To obtain a liquid metal ion source with an extremely stable ion emitting property and high reliability by using an alloy, in which not exceeding 25atom% of an element composing an emitter is put in an ionization material. CONSTITUTION:An alloy of Ni50B45C5, in which 5atom% of C is blended in brassicarbon or an SiC emitter, is adopted. Thereby, a leakage property of the emitter and a molten ion material is extremely improved while, as a result, reducing the ion current fluctuation down to not exceeding several % so that ions can be drawn out stably for long hours, thus heightening performance and reliability of an ion source.

25. 发明专利

JPS60200433A FIELD EMISSION TYPE LIQUID METAL ION SOURCE 失效
公开(公告)号：JPS60200433A
公开(公告)日：1985-10-09
申请号：JP5434084
申请日：1984-03-23
申请人： KOGYO GIJUTSUIN
发明人： ARIMOTO HIROSHI , MIYAUCHI EIZOU , HASHIMOTO TOSHIO
IPC分类号： H01J37/08 , C23C14/48 , H01J1/02 , H01J27/26 , H01L21/265
摘要： PURPOSE:To improve wettability of an ion seed material to tungsten and make continuous and stable ion beam emission obtainable by including a host metal composed of Pd and Ni, an n type impurity element, a p type impurity element, an impurity element for isolation into the ion seed material. CONSTITUTION:Ni is added to Pd as a host metal and the composition ratio is made to be within the range of 70-80:20-30 in weight percent. To the host metal of above composition the following impurities are included in total weight ratio range of 93.0-96.5:3.5-7.0 to compose a five element alloy; Si as an n type impurity element and Be as a p type impurity element, both belonging to the III-V group compound semiconductor; and B as an impurity element for isolation. Such alloy has a melting point of 900 deg.C or less and shows a favorable wettability to tungsten and can be used as a suitable ion seed material applicable to the ion source of a field emission type liquid metal.

26. 发明专利

JPS6036096B2 失效
公开(公告)号：JPS6036096B2
公开(公告)日：1985-08-19
申请号：JP17319679
申请日：1979-12-30
申请人： NIPPON KEMIKON KK
发明人： ANDO SUSUMU
IPC分类号： H01G9/14 , H01G4/40 , H01J1/02

27. 发明专利

JPS60150535A LIQUID METAL ION SOURCE FOR FIELD EMISSION-TYPE ION BEAM GENERATOR 失效
公开(公告)号：JPS60150535A
公开(公告)日：1985-08-08
申请号：JP475484
申请日：1984-01-17
申请人： KOGYO GIJUTSUIN
发明人： ARIMOTO HIROSHI , MIYAUCHI EIZOU , HASHIMOTO TOSHIO
IPC分类号： H01J1/02 , C23C14/48 , H01J27/02 , H01J27/26
摘要： PURPOSE:To obtain the captioned ion source with melting point less than 900 deg.C and capability for generating impurity ions for p type, n type and isolation, by using the quaternary alloy Pd-Si-Be-B whose composition ratio is within a specified range. CONSTITUTION:A liquid metal ion source in the quaternary alloy of Pd-Si-Be-B and is constituted in the composition ratio of 92-94:4-5:1.5-2:0.4-0.6wt%. Out of this quaternary alloy, Pd is the parent metal, Si becomes an n type impurity against III-V group compound semiconductor and Be becomes a p type impurity. Furthermore, B becomes isolation impurity when manufacturing a device on a substrate.

28. 发明专利

JPS6011417B2 失效
公开(公告)号：JPS6011417B2
公开(公告)日：1985-03-26
申请号：JP13662679
申请日：1979-10-23
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： MORIMYA OSAMU , SUZUKI SETSUO , KADOMA SHIGEKI
IPC分类号： H01J27/02 , H01J1/02 , H01J1/13 , H01J27/08 , H05H1/22

29. 发明专利

JPS5968142A Emitter chip for field ionization gas ion source 失效
标题翻译：用于现场离子化气体源的发射芯片
公开(公告)号：JPS5968142A
公开(公告)日：1984-04-18
申请号：JP17735082
申请日：1982-10-08
申请人： Fujitsu Ltd
发明人： ARIMOTO HIROSHI
IPC分类号： H01J1/02 , H01J27/26 , H01J37/08 , H01L21/302
CPC分类号： H01J27/26 , H01J2237/0807
摘要： PURPOSE:To obtain an ion source with high field intensity and high radiation ion current density whose emission site is restricted to a specified area by making the work function of a member which forms a tip larger than that of a member which forms the bottom. CONSTITUTION:A zirconium (Zr) coat 21 is formed by covering the entire of an emitter chip 3 with a metal with the smaller work function than tungsten W that is the material of the emitter chip 3, for example zirconium Zr. In this case, since a tip 11' has exceedingly small curvature as compared with that of the bottom 11, field intensity is increased and the zirconium of this area evaporates due to electric field. At the bottom, the coat 21 is formed as it is. As a result, the work function of the emitter chip is set to the value possessed by tungsten W, i.e. approximately 4.6eV at the tip 11' and on the other hand it is set to the value possesed by zorconium Zr, i.e. approximately 4.1eV at the bottom 11. The ionization of gas particles are collectively generated near the tip 11'.
摘要翻译：目的：获得具有高场强和高辐射离子电流密度的离子源，其发射位点通过使构成尖端的构件的功能大于构成底部的构件的尖端的功能而限制在特定区域。构成：通过用作为发射体芯片3的材料的钨W（例如锆Zr）的功函数较小的金属覆盖发射体芯片3的整体来形成锆（Zr）涂层21。在这种情况下，由于尖端11'与底部11相比具有非常小的曲率，因此场强增加，并且该区域的锆由于电场而蒸发。在底部，直接形成涂层21。结果，发射极芯片的功函数被设定为钨W所具有的值，即在尖端11'处约为4.6eV，另一方面被设定为由zorconium Zr所占的值，即大约4.1eV 在底部11处。气体颗粒的电离在尖端11'附近共同产生。

30. 发明专利

JPS593815B2 JPS593815B2 - 失效
公开(公告)号：JPS593815B2
公开(公告)日：1984-01-26
申请号：JP2040882
申请日：1982-02-10
申请人： Nippon Electron Optics Lab
发明人： OKUNUKI MASAHIKO
IPC分类号： H01J37/08 , H01J1/02 , H01J3/04 , H01J27/26 , H01J49/16
CPC分类号： H01J27/26

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