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21. 发明专利

JP2003234278A LIQUID FILM TREATMENT METHOD AND DEVICE THEREOF 审中-公开
公开(公告)号：JP2003234278A
公开(公告)日：2003-08-22
申请号：JP2002031911
申请日：2002-02-08
申请人： TOSHIBA CORP
发明人： EMA TATSUHIKO , HAYAZAKI KEI , ITO SHINICHI
IPC分类号： G03F7/16 , B05C11/00 , B05C11/08 , B05D1/40 , B05D3/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To form a film (photo-resist film, for example) composed of a solid constituent under a condition that the thickness of the film is uniform and the surface of the same is flat, by a method wherein a solvent is supplied onto a substrate to be treated (a semiconductor substrate, for example) to form a liquid film and, thereafter, drying treatment is applied. SOLUTION: A uniform solid layer film is formed by evaporating the solvent while adjusting the thickness of the liquid film 104 by a method wherein at least one parameter among respective treatment conditions such as the concentration of a solvent atmosphere, the temperature of the substrate 103 to be treated, an air flow supplied to the liquid film 104, pressure in a chamber, the number of revolutions of the substrate 103 to be treated and the like is controlled with respect to the liquid film 104 formed on the substrate 103 to be treated. COPYRIGHT: (C)2003,JPO

22. 发明专利

JP2003218020A SUBSTRATE PROCESSING METHOD AND DEVICE 审中-公开
公开(公告)号：JP2003218020A
公开(公告)日：2003-07-31
申请号：JP2002017937
申请日：2002-01-28
申请人： TOSHIBA CORP
发明人： TAKAHASHI RIICHIRO , EMA TATSUHIKO , ITO SHINICHI
IPC分类号： G03F7/30 , H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To solve the problem about the fact that the periphery of a semiconductor substrate is less cleaned than its center in a conventional cleaning method, and this fact causes notable troubles with an increase of the semiconductor substrate in area or diameter. SOLUTION: A cleaning nozzle 102 is made to scan at a certain speed along the liquid level of a developing solution 107 on a semiconductor substrate 106 (work). At this point, the cleaning nozzle 102 discharges or blows out a cleaning solution A108 (e.g. ozone aqueous solution), high-pressure air 109 (e.g. high- pressure dry air), and a cleaning solution B110 (e.g. hydrogen aqueous solution) to the developing solution 107 in this order in the scanning direction. The cleaning nozzle 102 has a length nearly equal to the diameter of the semiconductor substrate 106 and supplies the cleaning solution A108 (e.g. ozone aqueous solution) uniformly to the developing solution 107 to flush away the developing solution 107, dissolution products generated in a developing process, fine particles and the like outside of the semiconductor substrate 106. COPYRIGHT: (C)2003,JPO

23. 发明专利

JP2002328306A ULTRAVIOLET MICROSCOPE AND OBSERVATION METHOD USING THE SAME 失效
公开(公告)号：JP2002328306A
公开(公告)日：2002-11-15
申请号：JP2001132239
申请日：2001-04-27
申请人： NIKON CORP , TOSHIBA CORP
发明人： TSURUMUNE TOKUJI , MIZUNO JIRO , ITO SHINICHI , TAKAHASHI RIICHIRO , EMA TATSUHIKO
IPC分类号： G02B21/00 , G02B21/16 , G02B21/26 , G02B21/36
摘要： PROBLEM TO BE SOLVED: To provide an ultraviolet microscope capable of for reducing a sample damage caused on the occasion of ultraviolet rays observation and to provide an observation method using the same. SOLUTION: The ultraviolet microscope is provided with ultraviolet rays observation means (21-26, 41 and 43) by which a sample (11) is observed based on ultraviolet rays, gas supply means (51-57) by which an inert gas is supplied between the ultraviolet rays observation means and the sample, and a timing control means (13) which controls the inert gas supply timing by the gas supply means. In addition, the timing control means makes the gas supply means preliminarily supply the inert gas before observing the sample ultraviolet rays, and also fully supply the inert gas at least during the time of observing the sample with ultraviolet rays.

24. 发明专利

JP2002110517A LIQUID REMOVAL METHOD 失效
公开(公告)号：JP2002110517A
公开(公告)日：2002-04-12
申请号：JP2000297441
申请日：2000-09-28
申请人： TOSHIBA CORP
发明人： TAKAHASHI RIICHIRO , EMA TATSUHIKO , ITO SHINICHI , OKUMURA KATSUYA
IPC分类号： H01L21/027 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To inhibit the generation of minute dust, and to improve a yield in a process for drying liquid on a substrate. SOLUTION: This liquid removal method includes a process for fixing and making still a substrate 101 to be treated onto a horizontal fixing rest, a process for rotating a rectifying plate 103 having a suction hole 103a on the substrate 101 to be treated, a process for generating a negative pressure state between the rectifying plate 103 and substrate 101 to be treated, and a process for sucking air from the suction hole 103a by generating the negative pressure state, and for producing an air current between the substrate 101 to be treated and the rectifying plate 103.

25. 发明专利

JP2001168021A LIQUID FILM FORMING METHOD 失效
公开(公告)号：JP2001168021A
公开(公告)日：2001-06-22
申请号：JP2000255461
申请日：2000-08-25
申请人： TOSHIBA CORP
发明人： ITO SHINICHI , EMA TATSUHIKO
IPC分类号： B05C11/00 , B05D1/26 , B05D1/30 , G03F7/16 , H01L21/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To shorten treatment time and to reduce the quantity of liquids to be used concerning a liquid film forming method for forming a liquid film on a substrate to be treated by relatively moving a liquid drip nozzle and the substrate while dripping liquids from the nozzle. SOLUTION: The relative movement of a liquid drip nozzle 12 and a substrate 11 to be treated is composed of the linear movement of the liquid drip nozzle 12 from one terminal side of the substrate 11 to be treated through the surface of the substrate 11 to the other terminal side of the substrate 11 in a column direction and the movement in a row direction outside the substrate 11, the moving distance in the column direction is calculated by adding a drip length L on the substrate 11 and an acceleration/deceleration block, and a moving velocity(v) on the substrate in the column direction is determined corresponding to the square root of the product of the drip length L and the absolute value of acceleration/deceleration (a).

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