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21. 发明专利

JP2012144409A Oxide sintered compact, target formed of the same, and transparent conductive film 有权
标题翻译：氧化物烧结紧密，其形成的目标和透明导电膜
公开(公告)号：JP2012144409A
公开(公告)日：2012-08-02
申请号：JP2011005929
申请日：2011-01-14
申请人： Tosoh Corp , 東ソー株式会社
发明人： IIGUSA HITOSHI , KURAMOCHI TOSHIHITO , AKIIKE RYO , UTSUMI KENTARO
IPC分类号： C04B35/453 , C01G9/00 , C01G15/00 , C23C14/08 , C23C14/34 , H01B5/14
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact target allowing stable discharge, and a transparent conductive film having low resistance and having high transmittance in a wide range from a visible light region to a near-infrared region.SOLUTION: Film deposition is performed by a sputtering method using a sputtering target formed of a multiple oxide sintered compact comprising zinc, an element L (L is aluminum and/or gallium), scandium and oxygen, wherein the atomic ratio of L/(zinc+L+scandium) is 0.001-0.100 and the atomic ratio of scandium/(zinc+L+scandium) is 0.001-0.100, to obtain the objective transparent conductive film in which the atomic ratio of L/(zinc+L+scandium) is 0.002-0.100 and the atomic ratio of scandium/(zinc+L+scandium) is 0.002-0.100. The film is used as a light receiving element.
摘要翻译：要解决的问题：提供一种允许稳定放电的氧化物烧结体靶，以及在可见光区域到近红外区域的宽范围内具有低电阻和高透射率的透明导电膜。解决方案：使用由包含锌，元素L（L是铝和/或镓），钪和氧的多重氧化物烧结体形成的溅射靶的溅射法进行膜沉积，其中原子比为L /（锌+ L +钪）为0.001-0.100，钪/（锌+ L +钪）的原子比为0.001-0.100，得到目标透明导电膜，其中L /（锌+ L +钪）为0.002-0.100，钪/（锌+ L +钪）的原子比为0.002-0.100。该膜用作光接收元件。版权所有（C）2012，JPO＆INPIT

22. 发明专利

JP2012087362A Method for producing crystalline transparent conductive film 审中-公开
标题翻译：生产晶体透明导电膜的方法
公开(公告)号：JP2012087362A
公开(公告)日：2012-05-10
申请号：JP2010235252
申请日：2010-10-20
申请人： Tosoh Corp , 東ソー株式会社
发明人： MATSUMARU KEITARO , KURAMOCHI TOSHIHITO , UTSUMI KENTARO
IPC分类号： C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a method for producing a transparent conductive film having high weatherability and high resistance by crystallizing an amorphous film which has a specific composition and can be patterned with a weak acid even after a pre-baking/post-baking process.SOLUTION: The crystalline transparent conductive film is produced by heating an amorphous transparent conductive film at 250-300°C with coexistence of oxygen. The amorphous transparent conductive film is constructed of In, Sn, an element A (wherein the element A is one or more selected from Dy, Er, Eu, Gd, Ho, Lu, Nd, Pr, Sc, Sm, Tb, Tm, Y, and Yb) and oxygen. When the atomic ratios of the elements constituting the amorphous transparent conductive film are x=[element A]/([In]+[Sn]+[element A]) and y=[Sn]/([In]+[Sn]+[element A]), x=0.002-0.05 and -0.612x+0.0806≤y≤-1.02x+0.151.
摘要翻译：解决的问题：提供一种通过使具有特定组成的非晶膜结晶化而具有高耐候性和高电阻的透明导电膜的制造方法，即使在预烘烤后也可以用弱酸进行图案化的过程。解决方案：结晶透明导电膜通过在250-300℃下与氧共存加热无定形透明导电膜来制备。非晶体透明导电膜由In，Sn，元素A（其中元素A是选自Dy，Er，Eu，Gd，Ho，Lu，Nd，Pr，Sc，Sm，Tb，Tm， Y和Yb）和氧气。构成非晶质透明导电膜的元素的原子比为x = [元素A] /（[In] + [Sn] + [元素A]），y = [Sn] /（[In] + [Sn] + [元素A]），x = 0.002-0.05和-0.612x +0.0806≤y≤-1.02x + 0.151。版权所有（C）2012，JPO＆INPIT

23. 发明专利

JP2012020911A Zinc oxide sintered compact, method for manufacturing the same, sputtering target, and method for manufacturing transparent film 有权
标题翻译：氧化锌烧结紧固件，其制造方法，溅射目标和制造透明膜的方法
公开(公告)号：JP2012020911A
公开(公告)日：2012-02-02
申请号：JP2010161449
申请日：2010-07-16
申请人： Tosoh Corp , 東ソー株式会社
发明人： KURAMOCHI TOSHIHITO , IIGUSA HITOSHI , MESHIDA MASAMI , UCHIUMI KENTARO , SHIBUTAMI TETSUO
IPC分类号： C04B35/453 , C23C14/08 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a zinc oxide sintered compact from which a sputtering target of good shape accuracy can be obtained even not perform heat treatment or the like after processing, and from which a transparent film in which stable discharge is continuously possible also by a DC sputtering method and which has suitable insulation can be obtained.SOLUTION: When a zinc oxide powder in which the metal content other than zinc is less than 0.1% by weight, the BET specific surface area is 2-20 m/g, and the powder bulk density is 0.5-1.8 g/cmis fabricated, and calcinated, the calcination is performed such that the sintering temperature is 900-1,250°C, and a gas flow parameter is at least 8,000 under the inert atmosphere in which oxygen is at most 10 vol.%. Thereby, the zinc oxide sintered compact in which the metal content other than zinc is less than 0.1 wt.% and the volume resistivity is at most 1.0×10Ωcm at 25°C is manufactured, used as a sputtering target, and the transparency film is manufactured by a DC sputtering method.
摘要翻译：要解决的问题：为了提供一种氧化锌烧结体，即使不进行加工后的热处理等，也能够从该氧化锌烧结体获得良好的形状精度的溅射靶，并且从其中连续地进行稳定的放电的透明膜也可以通过DC溅射法获得并且可以获得具有合适绝缘性的。解决方案：当除了锌以外的金属含量小于0.1重量％的氧化锌粉末时，BET比表面积为2-20μm 2 g，粉体堆积密度为0.5-1.8g / cm 3，制成烧结温度为900-1,250℃的煅烧，在氧气为10体积％以下的惰性气氛下，气体流动参数为至少8,000。由此，在25℃下，锌以外的金属含量小于0.1重量％，体积电阻率为1.0×10 5 Ωcm的氧化锌烧结体制造，用作溅射靶，并且通过DC溅射法制造透明膜。版权所有（C）2012，JPO＆INPIT

24. 发明专利

JP2010120803A Multiple oxide sintered compact 审中-公开
标题翻译：多氧化物烧结紧凑
公开(公告)号：JP2010120803A
公开(公告)日：2010-06-03
申请号：JP2008295249
申请日：2008-11-19
申请人： Tosoh Corp , 東ソー株式会社
发明人： KURAMOCHI TOSHIHITO , IIGUSA HITOSHI , SHIBUTAMI TETSUO
IPC分类号： C04B35/453 , C23C14/34
摘要： PROBLEM TO BE SOLVED: To provide a multiple oxide sintered compact which can control the generation of an abnormal discharge phenomenon during sputtering and suppress reduction in the yield caused by particles. SOLUTION: The multiple oxide sintered compact comprises zinc, and an element(s) A which can take a positive trivalent or more valence whose ion radius when six-coordination is assumed in oxygen ions is 0.7 to 1.1 Å and an element(s) M different from the element(s) A which can take a positive trivalent or more valence whose ion radius when 4-coordination is assumed in oxygen ions is 0.5 to 0.7 Å by at least one or more kinds, respectively, and in which diffraction peaks detected within the range of 2θ=30 to 40° in an X-ray diffraction pattern (XRD) with Cu as a beam source are composed only of the (100) face, (002) face and (101) face belonging to a hexagonal wurtzite type structure. Thus, the generation of an abnormal discharge phenomenon can be suppressed, and reduction in the yield caused by particles can be suppressed. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以控制溅射期间异常放电现象的产生的多重氧化物烧结体，并抑制由颗粒引起的产率的降低。解决方案：多重氧化物烧结体包含锌和可以以三价或更多价的正数三价或更多价的元素A，其在氧离子中假设六配位时的离子半径为0.7至1.1，元素（ s）M不同于在氧离子中假定4-配位时的离子半径为正三价或更多价的元素A分别为至少一种或多种为0.5至0.7，并且其中在作为光束源的Cu的X射线衍射图（XRD）中，在2θ= 30〜40°的范围内检测到的衍射峰仅由（100）面，（002）面和（101）面构成六角纤锌矿型结构。因此，可以抑制异常放电现象的产生，并且可以抑制由颗粒引起的产量的降低。版权所有（C）2010，JPO＆INPIT

25. 发明专利

JP2007169158A Heat insulating material comprising silica formed body and method of producing the same 审中-公开
标题翻译：包含二氧化硅体的热绝缘材料及其制造方法
公开(公告)号：JP2007169158A
公开(公告)日：2007-07-05
申请号：JP2007000105
申请日：2007-01-04
申请人： Tosoh Corp , 東ソー株式会社
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： C04B35/14
摘要： PROBLEM TO BE SOLVED: To provide a silica formed body which is a porous body that is formed from a single ultrafine silica powder and useful as a heat insulating material, an abrasive material or the like and a method of producing the same.
SOLUTION: The silica formed body consists essentially of silica (silicon dioxide) and has 0.2 to 1.5 g/cm
3 bulk density, 15 to 400 m
2 /g BET specific surface area and 0.001 to 0.5 μm average grain size. In the formed body, the cumulative total pore volume of all the pores is 0.3 to 4 cm
3 /g and the cumulative pore volume of pores having a ≤1 μm average pore size is ≥70% of the cumulative total pore volume and also, the cumulative pore volume of pores having ≤0.1 μm average pore size is ≥10% of the cumulative total pore volume. The method of producing the silica formed body is provided.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种二氧化硅成形体，该二氧化硅成形体是由单一的超细二氧化硅粉末形成的多孔体，可用作绝热材料，研磨材料等，以及其制造方法。解决方案：二氧化硅形成体基本上由二氧化硅（二氧化硅）组成，并且具有0.2-1.5g / cm 3的堆积密度，15-400μm的SP2 / SP BET比表面积和平均粒径为0.001〜0.5μm。在成形体中，所有孔的累积总孔体积为0.3〜4cm 3 / SP＆gt; / g，平均孔径≤1μm的孔的累积孔体积为≥70％累积总孔体积，平均孔径≤0.1μm的孔的累积孔体积为累积总孔体积的10％以上。提供了二氧化硅成形体的制造方法。版权所有（C）2007，JPO＆INPIT

26. 发明专利

JP2001348271A POLISHING COMPACT AND POLISHING SURFACE PLATE USING THE SAME 失效
公开(公告)号：JP2001348271A
公开(公告)日：2001-12-18
申请号：JP2000169056
申请日：2000-06-01
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KONDO SATORU , HARADA YOSHINORI , ASANO MUTSUMI
IPC分类号： B24B37/00 , B24D3/00 , B24D3/34 , B24D11/00 , C04B35/46
摘要： PROBLEM TO BE SOLVED: To provide a polishing compact which can be used in a machining process or a CMP-process for polishing a base material such as a semiconductor substrate, an oxide substrate or a glass substrate or a soft material such as an optical material needing precision processing, and with which the problem related to a waste liquid can be almost solved, a material to be polished is efficiently polished with the finishing equivalent to or better than that attained by a method using a conventional polishing cloth and the formation of polishing cracks can be inhibited, and to provide a polishing surface plate using the polishing compact. SOLUTION: The polishing compact contains inorganic materials, each having hardness of 50 to 400 kg/mm2, in the total amount of >=90 wt.%, has a relative density of 20 to 70% and is composed of particles having an average particle size of 0.001 to 50 μm. The polishing surface plate is obtained by attaching necessary parts to the polishing compact.

27. 发明专利

JPH11240799A SINGLE CRYSTAL SUBSTRATE AND ITS PRODUCTION 失效
公开(公告)号：JPH11240799A
公开(公告)日：1999-09-07
申请号：JP6825998
申请日：1998-03-18
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： B24B37/12 , C30B29/30 , G02B1/02 , G02B6/12 , B24B37/04
摘要： PROBLEM TO BE SOLVED: To obtain a single crystal substrate excellent in surface roughness, having extremely small face sagging and smooth surface by keeping average roughness in the center line of a substrate surface, face sagging of the substrate and sagging of the substrate to thickness direction to a specific value. SOLUTION: In this substrate, average roughness in the center line of a substrate surface is set to bulk density, 10-400 m /g BET specific surface area and 0.001-0.5 μm average particle diameter to a polishing apparatus to afford a surface plate, pressing the wafer to the surface plate for polishing and polishing the wafer. The single crystal substrate includes especially preferably an oxide substrate of lithium borate or lithium tantalate.

28. 发明专利

JPH101376A SILICA FORMED BODY AND ITS PRODUCTION 失效
公开(公告)号：JPH101376A
公开(公告)日：1998-01-06
申请号：JP21970496
申请日：1996-08-21
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , KUBOTA YOSHITAKA
IPC分类号： C04B35/14 , C04B38/08
摘要： PROBLEM TO BE SOLVED: To provide a silica formed body which is a porous body that is formed from a signal superfine silica powder and useful as a heat insulating material, abrasive material, or the like. SOLUTION: This silica formed body consists essentially of silica (silicon dioxide) and has 0.2 to 1.5g/cm bulk density, 15 to 400m /g BET specific surface area and 0.001 to 0.5μm average grain size. In the formed body, the cumulative total pore volume of all the pores is 0.3 to 4cm /g and the cumulative pore volume of pores having a =70% of the cumulative total pore volume and also, the cumulative pore volume of pores having =10% of the cumulative total pore volume.

29. 发明专利

JPH08188466A ELECTROCONDUCTIVE CERAMIC AND ITS PRODUCTION 失效
公开(公告)号：JPH08188466A
公开(公告)日：1996-07-23
申请号：JP202495
申请日：1995-01-10
申请人： TOSOH CORP
发明人： KURAMOCHI TOSHIHITO , MORI TOSHIYUKI , YAMAMURA HIROSHI
IPC分类号： C04B35/00 , C01G23/00 , C04B35/495 , H01B1/08
摘要： PURPOSE: To obtain an electroconductive ceramic improved in ionic conductivity in a temperature range in which ionic conductivity is conventionally extremely low by using Ba2 In2 O5 as a base and elaborating to find an additive to a B site of brownmillerite structure to randomly arrange oxygen defect in a lower temperature. CONSTITUTION: This electroconductive ceramic is an oxide ceramic shown by Ba-In-Sn-O in the molecular ratio of Ba:In:Sn of 1:(1-x):x (0

30. 发明专利

JPH07301183A PIEZOELECTRIC PUMP 失效
公开(公告)号：JPH07301183A
公开(公告)日：1995-11-14
申请号：JP9331094
申请日：1994-05-02
申请人： TOSOH CORP
发明人： OSADA HIRONARI , OKAMURA TOSHIHIKO , KUDO MASAYUKI , KOIKE TOMOKAZU , KURAMOCHI TOSHIHITO
IPC分类号： F04B9/00 , F04B43/04
摘要： PURPOSE:To generate higher discharge pressure in a piezoelectric pump comprising a disc-shaped piezoelectric vibrator of which outer circumferential part is nipped by two flat casings by providing a fluid intake port and a discharge port in each casing, and connecting the discharge port of one casing to the intake port of the other casing to communicate them with each other. CONSTITUTION:An outer circumferential part of a piezoelectric vibrator 16 is sealed and supported by inner circumferential surfaces of casings 11a, 11b through fixing packings 17, and an AC voltage is applied to this piezoelectric vibrator 16 to vibrate the vibrator 16, so fluid is sucked into a pump chamber from an intake port, and discharged from a discharge port. In this case, each casing 11a, 11b is provided with an intake port 12a, 12b and a discharge port 13a, 13b, and check valves 14a, 14b and 15a, 15b are installed on each. The discharge port 13a in one casing 11a is connected to the intake port 12b of the other casing 11b by a connection tube 18, so the fluid is sucked from the intake port 12a, and discharged from the discharge port 13b as the whole body of a pump.

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