专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPH06177047A SELECTIVE VAPOR GROWTH METHOD AND CARRIER GAS SUPPLY DEVICE 失效
公开(公告)号：JPH06177047A
公开(公告)日：1994-06-24
申请号：JP32550092
申请日：1992-12-04
申请人： TOSHIBA CORP
发明人： NUMANO MASAKUNI , SAMATA SHUICHI
IPC分类号： C30B29/06 , H01L21/205
摘要： PURPOSE:To provide a selective vapor growth method for a polycrystalline silicon layer which is definite and excellent in controllability. CONSTITUTION:A selective vapor growth method partially removes an insulation film 12 on a silicon substrate 11 and exposes a silicon substrate surface 14 of a silicon substrate layer 10 and selectively crystal-grows a polycrystalline silicon layer 16 on the silicon substrate surface 14 of a substrate layer 10. This device provides a process which loads the silicon substrate layer 10 into a reaction chamber and supplies a carrier gas including moisture and oxygen at a concentration lower than 1ppm, thereby increasing the temperature, and a process which supplies the carrier gas including the moisture and oxygen at a concentration of abut 1ppm and over into the reaction chamber after the preceding process and then a process which supplies a silicon material gas with the carrier gas into the reaction chamber.

22. 发明专利

JPH05249055A 失效
公开(公告)号：JPH05249055A
公开(公告)日：1993-09-28
申请号：JP8170192
申请日：1992-03-03
申请人： TOSHIBA CORP
发明人： NUMANO MASAKUNI , TSUCHIYA NORIHIKO , MATSUSHITA YOSHIAKI
IPC分类号： G01N23/223
摘要： PURPOSE:To conduct accurate distribution measurement of a sample wherein the distribution of concentration of impurities is not uniform, by a method wherein a primary X-ray of uniform intensity is made to fall on the whole area of a part of the surface of the sample so that fluorescent X-rays of uniform intensity may be excited. CONSTITUTION:As to a controlling direction of an incident angle of X rays, two guide rails 21A and 21B are operated first by a driving part 20a and made to move to a position (0 degree) at which primary X-rays from two X-ray sources are superposed. Next, the X ray is made to fall on a sample 13 from one X-ray source 11A, a sample stage 16 is moved, the intensity of the X ray is detected by a counter tube 17 and then the sample stage 16 is moved to a position at which it is parallel to the primary X-rays. By moving the rails 21A and 21B by the same amount by the driving part 20a from the state (position of 0 degree) wherein the X-ray sources 11A and 11B and the surface of the sample are lined, incident angles of the primary X-rays from the X-ray sources 11A and 11B are made equal. On the occasion of measurement, the counter tube 17 is disposed outside the course of the X ray. An incident X-ray in an X-ray-irradiated part of the surface of the sample is the sum of incident X-rays from the first X-ray source 11A and the second X-ray source 11B and thus uniformity in an X-ray intensity distribution in the X-ray-irradiated part is improved to a large extent.

23. 发明专利

JPH04258115A MANUFACTURE OF SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH04258115A
公开(公告)日：1992-09-14
申请号：JP2002491
申请日：1991-02-13
申请人： TOSHIBA CORP
发明人： NUMANO MASAKUNI , SAMATA SHUICHI
IPC分类号： H01L21/205
摘要： PURPOSE:To enable a vapor growth layer to be formed at a low temperature using a simplest device possible. CONSTITUTION:A process for eliminating an oxide film on an Si substrate surface by placing the Si substrate within an environment of an epitaxial source gas at a concentration where no Si is deposited and a process for enabling a single-crystal Si film to be subjected to epitaxial growth on the above Si substrate surface using the epitaxial source gas at a specified concentration are provided.

24. 发明专利

JPH04256310A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04256310A
公开(公告)日：1992-09-11
申请号：JP1773891
申请日：1991-02-08
申请人： TOSHIBA CORP
发明人： NUMANO MASAKUNI , SAMATA SHUICHI
IPC分类号： H01L21/205 , H01L21/302
摘要： PURPOSE:To make it possible to grow reliably a polycrystalline Si film by a method wherein a vapor growth treatment is performed setting the ratio of the concentration of hydrochloric acid gas to the concentration of dichlorosilane gas at a specified value or lower and setting temperature conditions at a temperature or higher to need to decompose material gas and at a specified temperature or lower in a state that a natural oxide film of a specified film thickness is left. CONSTITUTION:An SiO2 insulating film 12 of a thickness of about 0.5mum is formed on the surface of an Si substrate 11 and thereafter, an opening part 13 of a diameter of about 0.6 to 2.0mum is formed by a photolithography technique. Then, an HF treatment of 1:200 is performed and at the time of a cleaning treatment using pure water subsequent to the HF treatment, the concentration of oxygen dissolved in the pure water is controlled to form a natural oxide film 14 of a thickness of 2 to 3Angstrom on the surface of the substrate 11 in the part 13 and a substrate to be treated is obtained. The substrate to be treated is set in a furnace, is heated up to 900 deg.C in an H2 atmosphere and immediately after the heat-up, SiH2Cl2 and HCl are used, a vapor growth treatment is performed at [SiH2Cl2]=0.1% and [HCl]=0.2%, with H2 carrier gas and at a pressure of 10Torr and lastly, a cooling-down treatment is performed.

25. 发明专利

JPH04212433A SEMICONDUCTOR SUBSTRATE, MANUFACTURE OF SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE, AND INSPECTION/ ESTIMATION METHOD FOR SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPH04212433A
公开(公告)日：1992-08-04
申请号：JP6210091
申请日：1991-03-26
申请人： TOSHIBA CORP
发明人： MIYASHITA MORIYA , HIRATSUKA HACHIRO , SAMATA SHUICHI , KUBOTA ATSUKO , NUMANO MASAKUNI , FUKUI HIROYUKI
IPC分类号： H01L21/66 , G01N1/28 , G01N21/84 , G01N21/95 , H01L21/306
摘要： PURPOSE:To obtain inspection/estimation method for semiconductor substrate, a high quality semiconductor substrate, its manufacturing method, and manufacturing method for a semiconductor device using the same. CONSTITUTION:A semiconductor substrate is treated by using basic aqueous solution. As to this treatment, the substrate is dipped in the aqueous solution, or exposed to the vapor from the solution. By this treatment, the substrate surface is selectively etched. The surface of the substrate after etching is irradiated with laser light, and scattering point density is measured. The quality of a substrate can be judged according to said density. Heat treatment can be also performed before or after the treatment of a substrate by using basic aqueous solution. By this heat treatment, defect density of the substrate surface is remarkably changed. On the basis of this change, the quality of a substrate can be also judged. When the substrate whose quality has been judged is used, a semiconductor device having a high quality substrate can be obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式