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21. 发明专利

JPH0582481A GARNET FILM PROCESSING METHOD 失效
公开(公告)号：JPH0582481A
公开(公告)日：1993-04-02
申请号：JP26547691
申请日：1991-09-18
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KATO YUJIRO , SUGIMOTO NAOTO , TATE AKIYUKI , SHIBUKAWA ATSUSHI , NAGAI YASUHIRO , YANAGISAWA KEIICHI
IPC分类号： C01G49/00 , G02B6/12 , G02F1/09 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To provide the method of deep etching the title garnet film by notably enhancing the resistance to the ion beams of a masking mataterial. CONSTITUTION:Within the title substitution type garnet film 2 wherein a part of constituent element excluding the magnetic garnet film 2 or the oxygen of said garnet represented by a general formula of R3Fe5O12 is substituted with the elements exceeding one kind having the equivalent valency numbers, as for a masking material 5, a thin film 4 laminated with exceeding one kind of metals selected out of an organic and/or inorganic resist, titanium, zirconium, niobium, tantalum, molybdenum, vanadium, tungsten, chrome is used. On the other hand, a gas exceeding one kind selected out of nitrogen, argon, oxygen, chlorine, boron trichloride is used as a gas seed to process said garnet film 2 using ion beams. Through these procedures, a wave guide path can be formed easily thereby enabling a device using a magnetic garnet film to be manufactured easily thus acquiring the notable industrial merit.

22. 发明专利

JPH0396286A FORMATION OF PATTERNED OXIDE SUPERCONDUCTING THIN FILM 失效
公开(公告)号：JPH0396286A
公开(公告)日：1991-04-22
申请号：JP23372589
申请日：1989-09-08
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAGAI YASUHIRO , YANAGISAWA KEIICHI , TSURU KOJI , KOSHIMOTO YASUHIRO
IPC分类号： H01L21/3205 , H01L23/52 , H01L39/24
摘要： PURPOSE:To provide an oxide superconducting film with an expected good film quality and to form the film in an expected pattern highly accurately and fine by a method wherein a patterned oxide superconducting film is formed by a dry etching treatment by making use of a second mask layer and a third mask layer for the oxide superconducting film as a mask. CONSTITUTION:An oxide superconducting film 2, a resist layer 12 and a metal layer 13 are formed on a substrate 1; a resist layer is formed; an exposure treatment and a development treatment are executed; a mask layer 14 is formed. A patterned mask layer 13' is formed by a dry etching treatment by making use of the mask layer 14 for the metal layer 13 as a mask; a patterned mask layer 12' is formed by a dry etching treatment by making use of the mask layer 13' for the resist layer 12 as a mask. Then, a patterned oxide superconducting film 2' is formed by a dry etching treatment using a nitrogen ion beam by making use of the mask layers 13' and 12' as a mask; the mask layers 13' and 12' are removed by an etching treatment using a plasma of oxygen.

23. 发明专利

JPH02205310A METHOD OF FORMING MAGNETIC MULTILAYER FILM 失效
公开(公告)号：JPH02205310A
公开(公告)日：1990-08-15
申请号：JP2521689
申请日：1989-02-03
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAGAI YASUHIRO , SENDA MASAKATSU , YANAGISAWA KEIICHI
IPC分类号： C23C14/34 , G11B5/31 , H01F41/18
摘要： PURPOSE:To bring a magnetostrictive constant to zero without lowering saturation magnetic flux density by using a mixed gas mainly comprising neon gas as a discharge gas for sputtering. CONSTITUTION:When argon is employed as a discharge gas for sputtering and the film thickness of a ferromagnetic layer is thinned in approximately 5nm in order to bring a magnetostrictive constant to zero, saturation magnetic flux density is lowered. When a mixed gas mainly comprising neon gas or neon gas is used as the discharge gas for sputtering, however, the magnetostrictive constant can be brought to zero even when the film thickness of the ferromagnetic layer is not thinned as seen conventional devices. Accordingly, the magnetostrictive constant can be brought to zero while minimizing the reduction of saturation magnetic flux density.

24. 发明专利

JPH01245506A MAGNETIC MULTILAYERED FILM AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01245506A
公开(公告)日：1989-09-29
申请号：JP7279588
申请日：1988-03-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAGAI YASUHIRO , SENDA MASAKATSU , YANAGISAWA KEIICHI
IPC分类号： H01F10/08 , H01F41/14
摘要： PURPOSE:To make it possible to apply the title multilayer film without limiting to Fe, Co and Ni films, and to facilitate the drawing up of the material design of magnetic thin film parts by a method wherein a ferromagnetic layer having positive magnetostriction and another ferromagnetic layer having negative magnetostriction are alternately laminated on a substrate, and an annealing process is conducted at a specific temperature. CONSTITUTION:An Fe layer 1 having weak negative magnetostriction, an NiFe layer 2 having strong magnetostriction and an Ni layer 3 having strong negative magnetostriction are alternately laminated on a substrate 4, and zero magnetostriction is accomplished by having the Fe layer 1 in the thickness of 1.5nm and 10nm. Excellent soft magnetic characteristics can be accomplished by annealing said magnetic multilayer film at the temperature range of 200-400 deg.C.

25. 发明专利

JPS60185220A MAGNETO-RESISTANCE EFFECT TYPE THIN FILM HEAD 失效
公开(公告)号：JPS60185220A
公开(公告)日：1985-09-20
申请号：JP3874884
申请日：1984-03-02
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAGAI YASUHIRO , TOSHIMA TOMOYUKI
IPC分类号： G11B5/39 , H01L43/08
摘要： PURPOSE:To generate a semi-simple magnetic domain structure easily and to improve an output by setting the aspect ratio (length/width) of a thin film stripe to a value within the formation of the semi-simple magnetic domain structure. CONSTITUTION:Although circulated magnetic domains 6a-6d appear on both the end sides of stripes of a thin film head 4, a semi-simple magnetic domain structure having no magnetic wall is formed on the center part other than both the sides of the stripes which is used as a magnetic sensor. When the aspect ratio is changed, a critical aspect ratio divided into a multi-magnetic domain structure and the semi-simple magnetic domain exists and the aspect ratio depends upon the film thickness or the like of MR stripes. If the aspect ratio is set to 8 or more by changing the film thickness of the stripes of the MR head 4 and the aspect ratio variously, the semi-simple magnetic domain state appears stably at the normally used film thickness. If the stripe ratio is increased moreover, the area ratio of the magnetic domains 6a-6d to the whole is reduced and the greater part of the head 4 is operated at a state close to the simple magnetic domain structure.

26. 发明专利

JPS60180124A ION BEAM ETCHING METHOD 失效
公开(公告)号：JPS60180124A
公开(公告)日：1985-09-13
申请号：JP3439284
申请日：1984-02-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TOSHIMA TOMOYUKI , YANAGISAWA KEIICHI , NAGAI YASUHIRO , FUKUI SHIGEHISA
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To realize etching within a short period of time and with high processing accuracy by using fluoric carbon ambient as the etching ambient and using a material which is not easily reacting with fluorine ions as the mask material. CONSTITUTION:A material to be etched 10 is placed on a sample pedestal 9, the plasma conversion field is generated by applying a current to a magnet 4, a predetermined voltage is applied to the anode 3 and carbon fluoride gas is supplied from the supply hole 1. CF4 is ionized by the electrons and voltage applied to the anode 3 and thereby various ions such as CF , CF2 , CF , F and C , etc. When a voltage difference is generated between grids 5, these ions are accelerated and lead out in the direction determined by the structure of gride 5 and collide with the material 10 to be etched within a sample chamber 7 through the mask 11. Thereby, etching of ceramic material such as Al2O3.TiC, nonmagnetic ferrite can be realized within a short period.

27. 发明专利

JPS60173839A FLATTENING METHOD OF SUBSTRATE 失效
公开(公告)号：JPS60173839A
公开(公告)日：1985-09-07
申请号：JP2434184
申请日：1984-02-14
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAGAI YASUHIRO , YANAGISAWA KEIICHI , NISHIMURA TSUTOMU , TOSHIMA TOMOYUKI
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To flatten the irregularities of the surface of a substrate through a simple process by a method wherein an inorganic insulating film as a flattening material is formed on the substrate, an organic resist is applied, the surface of the resist is flattened once through heat treatment, the substrate is disposed to an ion-beam axis at a specific angle and etching the surface by ion beams. CONSTITUTION:An inorganic insulating film 4 is formed on the surface of a substrate in thickness of approximately twice as large as the thickness of a conductor pattern film as a flattening material so as to coat the irregular surface of the conductor pattern 2. The surface of the insulating film 4 is shaped in an irregular surface corresponding to the surface of the conductor pattern 2 at that time. An organic resist is applied on the irregular surface on the insulating film 4 so as to coat the surface of the insulating film 4, and a resist film 3a with a flat surface is formed on the insulating film 4 and the surface of the substrate is flattened once by thermally treating the organic resist. When the surface of the substrate is flattened through ion beam etching, the substrate 1 is arranged to the axis of ion beams 10 at an angle theta of 50-70 deg.C, and the resist film 3a and the upper layer section of the insulating film 4 are etched simultaneously by ion beams.

28. 发明专利

JP2002163660A ROTATING ANGLE DETECTION ERROR REDUCING METHOD FOR IMAGE PATTERN AND RECORDING MEDIUM RECORDING PROGRAM FOR THE SAME 失效
公开(公告)号：JP2002163660A
公开(公告)日：2002-06-07
申请号：JP2000360734
申请日：2000-11-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAJIMA SHIGERU , TSURU KOJI , OTANI YOSHIMITSU , NAGAI YASUHIRO
IPC分类号： G06T7/60 , G06T7/00 , G06T7/40
摘要： PROBLEM TO BE SOLVED: To provide a rotating angle detection error reducing method for highly accurately detecting the rotating angle of a source image pattern with low image resolution or detecting the rotating angle of a pattern limiting the spatial frequency, that the pattern has, to a low frequency band. SOLUTION: A source image is rotated at an arbitrary rotating angle, the rotating angle of a detection target pattern is detected from the rotated image by various rotating angle detecting methods, and the rotating angle of the pattern of the source image with a detection error is calculated by subtracting the arbitrary rotating angle from the detected rotating angle. Further, the same operation is repeated plural times while changing the arbitrary rotating angle, the rotating angle detection error is canceled by averaging the calculated plural rotating angles, and the rotating angle of the pattern of the source image is accurately found. Namely, the rotating angle of the source image is accurately detected by using a statistic character that the mean value of the detection error, which is included when the rotating angle of the arbitrarily rotated object pattern is detected, is converged to a fixed value including '0'.

29. 发明专利

JP2002015298A SYSTEM AND METHOD FOR PALM SHAPE AUTHENTICATION 失效
公开(公告)号：JP2002015298A
公开(公告)日：2002-01-18
申请号：JP2000193918
申请日：2000-06-28
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAJIMA SHIGERU , TSURU KOJI , OTANI YOSHIMITSU , NAGAI YASUHIRO
IPC分类号： B42D15/10 , G06K17/00 , G06K19/10 , G06T7/00 , H04L9/32
摘要： PROBLEM TO BE SOLVED: To solve the problem that there is a problem of security although authentication by an IC card is convenient and the problem that identification using a palm shape requires trouble and time. SOLUTION: For equipment authentication of the IC card 5 by R/W1B, a CCD camera 1C detect the IC card submitted to R/W and the shape of the palm holding the IC card without contacting and a control part 1A extracts feature data of the detected palm shape and matches the palm shape feature data against palm shape feature data on the bearer of the IC card registered in a storage device 3 to identify the bearer of the IC card, thereby controlling a gate opening/closing device ID, etc.

30. 发明专利

JP2001266076A IC CARD SECONDARY ISSUING AND UPDATING METHOD, AND SYSTEM APPARATUS THEREOF 失效
公开(公告)号：JP2001266076A
公开(公告)日：2001-09-28
申请号：JP2000076612
申请日：2000-03-17
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TSURU KOJI , SUZUKI TAKAFUMI , OTANI YOSHIMITSU , NAGAI YASUHIRO
IPC分类号： B42D15/10 , G06K17/00 , G06K19/10
摘要： PROBLEM TO BE SOLVED: To provide an IC card secondary issuing and updating method and its system device, by which the secondary issuing and updating processings of an IC card are rapidly and inexpensively performed, convenience is enhanced for customers and the distribution cost of a service providing company is reduced. SOLUTION: In a system means, the IC card 6, where zero-th order issuing and first-order issuing processings are performed is originally sold in a store, such as a market, a convenience store or a department store, and then processings concerning issuing and updating of the IC card 6, such as its secondary issuing processing, its data updating processing, its re-issuing processing or its individual information updating processing are performed with the service providing center 9 by way of a network 10 represented by a public line, such as Internet lines, exclusive lines, radio waves or cables.

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