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21. 发明专利

JPH02212395A PRODUCTION OF COMPOUND SEMICONDUCTOR CRYSTAL AND PRODUCING DEVICE 失效
公开(公告)号：JPH02212395A
公开(公告)日：1990-08-23
申请号：JP3193589
申请日：1989-02-10
申请人： FURUKAWA ELECTRIC CO LTD
发明人： YOSHIDA KIYOTERU , KIJIMA TAKASHI , OZAWA SHOICHI , KIKUTA TOSHIO
IPC分类号： C30B27/02 , H01L21/208
摘要： PURPOSE:To easily perform crystallization of single crystal and to eliminate the need for control of a shape by performing formation of a shoulder part and initial growth by a pulling-up method after seeding and thereafter growing crystal in a crucible by a vertically coagulating method with a prescribed temp. profile. CONSTITUTION:Melt 8 of a compound semiconductor housed in a crucible 7 is covered by melt 9 of a liquid sealing agent. The seed crystal 3 of the compound semiconductor is brought into contact with the melt 8 and thereafter this melt is coagulated while pulling-up the seed crystal. The shape of a shoulder part is formed and crystal is grown until crystal reaches prescribed diameter nearly equal to the inner diameter of the crucible 7. A prescribed temp. profile is formed for the melt 8 on the basis of this grown crystal 8A. Then the melt 8 is coagulated by transfer of the temp. gradient in the solid-liquid interface.

22. 发明专利

JPS6090895A GROWING METHOD OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL HAVING VOLATILITY 失效
公开(公告)号：JPS6090895A
公开(公告)日：1985-05-22
申请号：JP19533883
申请日：1983-10-20
申请人： FURUKAWA ELECTRIC CO LTD
发明人： OZAWA SHIYOUICHI , KIJIMA TAKASHI , AZUMA KATSUMI , KASHIYANAGI YUUZOU
IPC分类号： C30B27/02 , C30B15/10 , H01L21/208
摘要： PURPOSE:To grow a uniform and high-quality single crystal by covering the upper layer of the melt with a liquid capsuling material layer, and incorporating a specific melt floating layer into the lower layer in pulling up a III-V group compd. semiconductor single crystal from the melt in a crucible and drying. CONSTITUTION:The surface of a GaAs melt layer 23 in a quartz crucible 21 is covered with a liquid capsuling material layer (B2O3)22, and a melt floating material layer (Bi2O3)24 which does not react with the melt 23 and whose specific gravity and specific heat are higher than those of the melt 23 is placed under the layer 22. In addition, a film 25 of the melt floating material is formed on the inner surface of the crucible 21 contacting with the melt 24. Under said conditions, a seed crystal 29 supported by a lifting shaft 28 is passed through the liquid capsuling material layer 22, brought into contact with the melt layer 23, and lifted up while rotating to gradually grow a GaAs single crystal 30. The change of thermal conditions due to the decrease in the amt. of the melt during the growth of the single crystal is prevented by the liquid capsuling material layer 22, and the optimum conditions are maintained. The intrusion of impurities from the crucible 21 is prevented by the melt floating material layers 24 and 25, and the high-quality single crystal 30 can be obtained.

23. 发明专利

JPS6011299A METHOD AND DEVICE FOR PRODUCING COMPOUND SINGLE CRYSTAL WITH HIGH DISSOCIATION PRESSURE 失效
公开(公告)号：JPS6011299A
公开(公告)日：1985-01-21
申请号：JP11571783
申请日：1983-06-27
申请人： FURUKAWA ELECTRIC CO LTD
发明人： AZUMA KATSUMI , OZAWA SHIYOUICHI , KIJIMA TAKASHI , KASHIYANAGI YUUZOU
IPC分类号： C30B27/02 , C30B15/00 , C30B29/40 , H01L21/208
摘要： PURPOSE:To suppress thermal decomposition on the surface of III-V group compd. single crystal and to prevent generation of a defect in a process for producing said single crystal by a melt-pulling up method by maintaining the vapor atmosphere of a volatile element (V group element) in the sealing space above the liquid sealing bath of a crucible. CONSTITUTION:A quartz cover 14 provided with a tubular opening 15 at the top is fitted to the crucible 3 in a pressure vessel 1 and the inside of the vessel 1 is maintained under 3-60atm, by an inert gas. The upper part of the cover 14 is heated to 400-700 deg.C by auxiliary heaters 4a, 4b and the crucible 3 is heated by the heater 4 to melt the raw material charged preliminarily therein and to form a gallium aresenide melt 9 and a liquid sealing bath 10 consisting of boron oxide. The sealing space in the cover 14 is maintained in the arsenic vapor atmosphere under 7Torr-4atm. partial pressure. While the temp. gradient in the bath 10 is kept at

24. 发明专利

JP2002148445A METHOD FOR TAKING OUT WIND BEGINNING TERMINAL OF OPTICAL CABLE 失效
公开(公告)号：JP2002148445A
公开(公告)日：2002-05-22
申请号：JP2000338182
申请日：2000-11-06
申请人： FUJIKURA LTD , CHUBU ELECTRIC POWER , FURUKAWA ELECTRIC CO LTD
发明人： KUSAKARI MASAHIRO , HASHIMOTO YOSHIO , KONDO TAIKICHI , NIWA AKIHIRO , KAWASHIMA JUNICHI , KAMATA YOSHIYUKI , KIJIMA TAKASHI
IPC分类号： G02B6/00 , H02G1/02 , H02G7/06
摘要： PROBLEM TO BE SOLVED: To allow the wind beginning terminal of the optical cable to be easily taken out when being used while surely maintaining a shape holding property of an optical cable wound in a coil shape until being used on the site, with respect to an optical unit bundle consisting of the optical cable wound in the coil shape which is spirally wound around an existing DV line (electric power line or distribution line) and is laid. SOLUTION: In this method, plural layers of the optical cable 6 are wound in the coil shape around a winding core after attaching the wind beginning terminal 6a of the optical cable 6 to the cylindrical winding core 4, next, a cylindrical protective cover 8 having a diameter equal to or somewhat smaller than the outside diameter of the outermost layer being increased by a repulsing return after winding the optical cable 6 is attached to the outermost layer of the optical cable 6, thereafter the wind finishing terminal 6b of the optical cable 6 is attached to the cylindrical protective cover 8 to compose the optical unit bundle 2, the cylindrical winding core 4 is drawn out of the optical unit bundle 2 when the optical unit bundle 2 is used, and whereby the wind beginning terminal of the optical cable is taken out.

25. 发明专利

JP2001286021A OPTICAL COMPOSITE LEAD-IN WIRE AND ITS CONSTITUTION METHOD 失效
公开(公告)号：JP2001286021A
公开(公告)日：2001-10-12
申请号：JP2000369406
申请日：2000-12-05
申请人： FURUKAWA ELECTRIC CO LTD , CHUBU ELECTRIC POWER , FUJIKURA LTD
发明人： KONDO TAIKICHI , NIWA AKIHIRO , KAWASHIMA JUNICHI , KIJIMA TAKASHI , TAGO MAKOTO , KAMATA YOSHIYUKI , SEKII YUICHI , KOBAYASHI ICHIRO , TAKEDA YOSHITERU , KOBAYASHI KAZUNAGA , KUSAKARI MASAHIRO
IPC分类号： G02B6/44 , G02B6/46 , H02G1/02 , H02G1/06 , H02G7/02
摘要： PROBLEM TO BE SOLVED: To provide an optical composite lead-in wire which can lead an optical fiber to a general home at low cost. SOLUTION: An optical composite lead-in wire 15 is constituted by accompanying the whole or a part of a power lead-in cable 6 with a redundant optical unit 10 which is cut longer than a power lead-in wire 6 laid. The end of the optical unit 10 is opened.

26. 发明专利

JPH02204394A METHOD AND DEVICE FOR GROWING SINGLE CRYSTAL 失效
公开(公告)号：JPH02204394A
公开(公告)日：1990-08-14
申请号：JP2134589
申请日：1989-01-31
申请人： FURUKAWA ELECTRIC CO LTD
发明人： NAKAYAMA HIROSHI , KIJIMA TAKASHI , OZAWA SHOICHI , KIKUTA TOSHIO
IPC分类号： C30B27/00 , H01L21/208
摘要： PURPOSE:To allow easy taking-out of the solidified and grown crystal from a crucible by forming the crucible for containing raw materials to a prescribed shape and decreasing the residual strains arising form the volumetric expansion at the time of growing the single crystal by moving this crucible to a low temp. region in the upper part. CONSTITUTION:The crucible 1 containing the raw material melt 5 for the single crystal and a liquid sealing medium 2 to cover the upper surface thereof is provided in a high pressure vessel. The internal surface of the crucible 1 has the inclination of 1 to 10 deg. angle in a vertical direction and the upper part thereof has an expanding shape. After the seed crystal 7 is brought into contact with the upper surface of the above-mentioned melt 5, the crucible 1 and the seed crystal 7 are moved in the low temp. region in the upper part to successively grow the single crystal. The single crystal is grown by moving the above- mentioned seed crystal 7 faster than the crucible 1.

27. 发明专利

JPS62230696A PRODUCTION OF SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS62230696A
公开(公告)日：1987-10-09
申请号：JP7524186
申请日：1986-04-01
申请人： FURUKAWA ELECTRIC CO LTD
发明人： NAKAYAMA HIROSHI , KIJIMA TAKASHI , AZUMA KATSUMI , KASHIYANAGI YUZO
IPC分类号： C30B27/02 , H01L21/18 , H01L21/208
摘要： PURPOSE:To prevent formation of polycrystals and occurrence of twins and obtain a complete single crystal in improved wafer yield without insufficient diameter, by relatively controlling the pulling up speed of the single crystal and temperature decreasing rate of a heater when a given solidification ratio is attained. CONSTITUTION:A raw material for semiconductor a single crystal is put in a PBN crucible 6 placed in a susceptor 5 on a crucible pushing up shaft (crucible shaft) 4 in a high-pressure vessel 1 and melted by heating with a heater 2 to give a raw material melt 9. The surface of the raw material melt 9 is then covered with B2O3 melt 8 and a seed crystal 10 at the tip of a crystal pulling up shaft (seed shaft) 3 is dipped to the compatible with the surface of the raw material melt 9 and then the resultant single crystal 7 is pulled up by pulling up only the seed shaft 3 at 5.3mm/hr speed up to, e.g. 2.5% solidification ratio, at 5.3mm/hr speed. When the solidification ratio attains 2.5%, the crucible shaft 4 is pushed up at 1.4mm/hr speed to reduce the crystal pulling up speed to 3.9mm/hr. When the solidification ratio attains 50%, the crystal pulling up speed is dropped to 3.0mm/hr which is about decreased by 23%. During that time, temperature is decreased at a temperature decreasing rate corresponding to the speed to pull up the aimed single crystal while controlling the diameter.

28. 发明专利

JP2002142319A WIRING METHOD FOR DROP CABLE 失效
公开(公告)号：JP2002142319A
公开(公告)日：2002-05-17
申请号：JP2000338523
申请日：2000-11-07
申请人： FUJIKURA LTD , CHUBU ELECTRIC POWER , FURUKAWA ELECTRIC CO LTD
发明人： KOBAYASHI KAZUNAGA , HASHIMOTO YOSHIO , KONDO TAIKICHI , NIWA AKIHIRO , KAWASHIMA JUNICHI , KAMATA YOSHIYUKI , KIJIMA TAKASHI
IPC分类号： G02B6/46 , H02G1/02
摘要： PROBLEM TO BE SOLVED: To provide a wiring method for a drop cable, which can solve the problem that the cable is wasted, loss characteristics in an optical fiber must be considered, and an existing DV wire cannot be used, etc., and to efficiently carry out cable dropping. SOLUTION: A DV wire (polyvinyl chloride insulated drop wire) 4 and an optical drop cable 5 are dropped from an overhead distribution network, comprising a distribution wire 1 and a distribution system optical cable 2 which are installed in parallel with each other, to a house 7 according to a following procedure. First, the DV wire 4 is let through an optical drop cable ring bundle 5', formed by bundling up the optical drop cable 5 into a ring shape. Both the ends of the DV wire 4 are fixed to a pole 3 side and to a house side (a fixing point 9). The cable end of the optical drop cable ring bundle 5' is connected to an outdoor junction box 8 of the house. Then, if the optical drop cable ring bundle 5' is moved toward the pole 3 side, the optical drop cable 5 is supplied from the bundle 5' and automatically wound spirally on the DV wire 4. The neighborhood of the tip of the optical drop cable 5 is fixed to the DV wire 4, and the tip is connected to the distribution wire 1 with a closure 10.

29. 发明专利

JP2001286022A OPTICAL COMPOSITE LEAD-IN WIRE AND ITS CONSTITUTION METHOD 失效
公开(公告)号：JP2001286022A
公开(公告)日：2001-10-12
申请号：JP2000369407
申请日：2000-12-05
申请人： FURUKAWA ELECTRIC CO LTD , CHUBU ELECTRIC POWER , FUJIKURA LTD , HITACHI CABLE
发明人： KONDO TAIKICHI , NIWA AKIHIRO , KAWASHIMA JUNICHI , KAMATA YOSHIYUKI , SEKII YUICHI , KOBAYASHI ICHIRO , KIJIMA TAKASHI , TAGO MAKOTO , TAKEDA YOSHITERU , KOBAYASHI KAZUNAGA , KUSAKARI MASAHIRO , TAKAHASHI YOSHIHIRO , FURUSAWA KENICHI
IPC分类号： G02B6/46 , H01B11/22 , H02G1/02 , H02G7/00
摘要： PROBLEM TO BE SOLVED: To provide an optical composite lead-in wire which can lead an optical fiber to a general home at low cost. SOLUTION: A redundant optical unit 10 which is cut longer than a power lead-in wire 6 laid is arranged beforehand in the vicinity of the power lead-in wire 6.

30. 发明专利

JPH1014074A CORRUGATED TUBE FIXING STRUCTURE 失效
公开(公告)号：JPH1014074A
公开(公告)日：1998-01-16
申请号：JP15985796
申请日：1996-06-20
申请人： FURUKAWA ELECTRIC CO LTD , TOKYO ELECTRIC POWER CO
发明人： SENOO HIROKI , NAKAYAMA KIYOSHI , NAKADA TOSHIO , KIJIMA TAKASHI , HORIKOSHI TOSHIO , YOKOSUKA KOICHI
IPC分类号： F16L33/00 , F16L33/28 , H02G9/06 , H02G9/10
摘要： PROBLEM TO BE SOLVED: To make it possible to fix a corrugate tube without damaging to the fixing section even if external force is exerted on the corrugated tube, by bringing flanges into contact with the external surface and internal surface of a concrete box and filling the through holes in the concrete box with mortar for fixation. SOLUTION: An end of a corrugated tube 1 is inserted from the outside into a through hole 2a in a side wall of a concrete box 2, and the flange 13 of one of fixing members 11 is brought into contact with the outside surface of the side wall. A gap between the inside surface of the through hole 2a and the corrugated tube 1 is filled with mortar M, and the cylindrical portion 12 of the other of the fixing members 11 is fit onto the end of the corrugated tube 1 positioned inside the concrete box 2. The flange 13 of the other of the fixing members 11 is brought into contact with the inside surface of the side wall. This prevents the portion of the corrugated tube positioned in the through hole from being bent and slanted if external force is exerted on the corrugated tube. This also prevents uncured mortar from cracking and being damaged, and enables the enhancement of the strength of the corrugated tube fixing section.

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