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21. 发明专利

JPS56120171A LIGHT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56120171A
公开(公告)日：1981-09-21
申请号：JP2292180
申请日：1980-02-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , KOBAYASHI TAKESHI
IPC分类号： H01L31/10 , H01L31/0264 , H01L31/09
摘要： PURPOSE:To intend the shortness of a response time by preventing the diffusion towards the depth direction of an electron excited by light and a positive hole. CONSTITUTION:An InGaAsP 11 having a forbidden band breadth Eg1=0.9eV is epitaxially formed on an InP 10 having Eg=1.3eV. In this case, if Eg2-Eg1 is selected to be Eg2-Eg1>=0.4eV, the leakage of the photoexcited electron and of the hole can be restrained by less than 10%. Further, the thickness of a layer 11 is provided to be equal to the absorption wave length of the light. A light acceptance zone 13 is made by arranging a pair of Au-electrodes 12a and 12b at intervals of 3- 100mum, said layer 10 being provided with an earth electrode 14 at the rear thereof. The electron 15 and the hole 16 excited within the layer 11 can not diffuse from layer 11 to l0 due to the wall 17 of the forbidden band caused by hetero-juction. From this reason the concn. is stabilized and a velocity of an optical switch having a super high speed is obtained by flowing it into electrodes 12a and 12b.

22. 发明专利

JPH06221688A HEAT GENERATING METHOD AND HEAT GENERATING DEVICE 失效
公开(公告)号：JPH06221688A
公开(公告)日：1994-08-12
申请号：JP821793
申请日：1993-01-21
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NISHIOKA TAKASHI , YAMAGUCHI EIICHI
IPC分类号： C22C5/06 , F24J3/00
摘要： PURPOSE:To provide an effective heat source by a method wherein a high efficient heat generating reaction is generated in a solid material through a new accumulation of deuterium into the solid material. CONSTITUTION:Gas composed of deuterium or light hydrogen or tritium or substance of a mixture of these elements is absorbed and stored in an object 7 at the time of formation or after formation of the object 7 having a structure in which a first substance 1 composed of paradium or titanium and a second substance 6 composed of alloy containing one of silver or yttrium or iron or nickel with a component ratio of 50% or more are arranged adjacent to each other. In addition, the first substance 1 of the object 7 is applied as a positive electrode, the second substance 6 is applied as a negative electrode and an electrical current is passed through the structures arranged adjacent to each other. For example, when a potential gradient is applied to an electrical current applying means 1.0 for connecting the positive potential to the paradium 1 and connecting the negative potential to Ag50V45Pt5 6, D atom 2 absorbed and stored in the paradium 1 and Ag50V45Pt5 6 is concentrated near an interface 4 and stored.

23. 发明专利

JPH06214069A DEVICE AND METHOD FOR REACTION VERIFICATION IN NUCLEAR FUSION REACTION DEVICE OF HYDROGEN 失效
公开(公告)号：JPH06214069A
公开(公告)日：1994-08-05
申请号：JP2344593
申请日：1993-01-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YONEZAWA HIROKI , KANO KOJI , SHIGEMATSU TOSHIO , YAMAGUCHI EIICHI
IPC分类号： G21B3/00 , G21B1/00
摘要： PURPOSE:To effectively measure gamma-rays emitted accompanying nuclear fusion reaction generation, or the gamma-rays and electronic beams when a nuclear fusion reaction of hydrogen is generated. CONSTITUTION:In a nuclear fusion reaction device of hydrogen in which a reaction sample 14 having deuterium as a nuclear fusion reaction source stored therein is arranged in a vacuum chamber 11, and the reaction sample 14 is heated by an electric heater 15 to generate a nuclear fusion reaction, the outer circumference corresponding part of the vacuum chamber 11 is shielded by a metal shielding body 13, a gamma-ray transmitting window 12b and others are formed in required parts of the vacuum chamber 11, gamma-ray detectors 16a, 16b are arranged close to the outside of the gamma-ray transmitting window 12b and others in the metal shielding body 13, and an electron beam detector 17 is arranged in conformation to the reaction sample 14 in the vacuum chamber 11.

24. 发明专利

JPS5868937A FORMATION OF INSULATING FILM ON SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5868937A
公开(公告)日：1983-04-25
申请号：JP16739081
申请日：1981-10-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKAMURA MASAMICHI , YAMAGUCHI EIICHI , FURUKAWA YOSHITAKA
IPC分类号： H01L29/78 , H01L21/314 , H01L21/318
摘要： PURPOSE:To prevent evaporation of P from the surface of a semiconductor crystal when an insulating phosphorus nitride film is to be formed on the semiconductor InP crystal by a method wherein formation thereof is performed in an atmosphere containing P. CONSTITUTION:After a semiconductor crystal 12 consisting of an InP crystal is set in a reaction tube 10, the surface of the crystal 12 is cleaned supplying HCl+H2 gas from a gas source 4. Then after the inside of the reaction tube 10 is replaced with PH3+H2 gas supplied from a gas source 3, the crystal 12 is heated by a heat source 11. At this time, evaporation of P from the surface of the crystal 12 is suppressed effectively by existence of PH3 gas. Then, after supply of gas from the gas source 3 is cut, NH3 gas and PCl5+H2 gas are supplied respectively from a gas source 1 and a gas source 2. Accordingly, a vapor phase reaction of gases mentioned above is performed in the reaction tube 10, and as a result, an insulating film 13 consisting of P3N5 or PN is formed on the semiconductor crystal 12.

25. 发明专利

JPS5868936A FORMATION OF INSULATING FILM ON SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5868936A
公开(公告)日：1983-04-25
申请号：JP16738981
申请日：1981-10-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKAMURA MASAMICHI , YAMAGUCHI EIICHI , FURUKAWA YOSHITAKA
IPC分类号： H01L29/78 , H01L21/314
摘要： PURPOSE:To prevent evaporation of a P from the surface of a semiconductor crystal when a P4S7 film is to be formed on the InP semiconductor crystal by a method wherein formation thereof is performed in an atmosphere containing P. CONSTITUTION:After a semiconductor crystal 12 consisting of an InP crystal is set in a reaction tube 10, the surface of the crystal 12 is cleaned supplying HCl+H2 gas from a gas source 4. Then after the inside of the reaction tube 10 is replaced with PH3+H2 gas supplied from a gas source 3, the crystal 12 is heated by a heat source 11. At this time, evaporation of P from the surface of the crystal 12 is suppressed by existence of PH3 gas. Then, after supply of gas from the gas source 3 is cut, SCl2 gas and H3PS4 gas are supplied respectively from a gas source 1 and a gas source 2. Accordingly a vapor phase reaction of gases mentioned above is performed in the reaction tube 10, and as a result, an insulating film consisting of P4S7 is formed on the semiconductor crystal 12.

26. 发明专利

JPS5868935A FORMATION OF INSULATING FILM ON SEMICONDUCTOR CRYSTAL 失效
公开(公告)号：JPS5868935A
公开(公告)日：1983-04-25
申请号：JP16738881
申请日：1981-10-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OKAMURA MASAMICHI , YAMAGUCHI EIICHI , FURUKAWA YOSHITAKA
IPC分类号： H01L21/314 , H01L21/318
摘要： PURPOSE:To prevent evaporation of P from the surface of a semiconductor crystal when an insulating phosphoryl nitride film is to be formed on a semiconductor InP crystal by a method wherein formation thereof is performed in an atmosphere containing P. CONSTITUTION:After a semiconductor crystal 12 consisting of an InP crystal is set in a reaction tube 10, the surface of the crystal 12 is cleaned by making H2 gas contaoning HCl gas to flow from a gas source 4. Then after the inside of the reaction tube 10 is replaced with H2 gas containing PH3 gas supplied from a gas source 3, the crystal 12 is heated by a heat source 11. At this case, evaporation of P from the surface of the crystal 12 is suppressed by existence of PH3 gas. Then after supply of gas from the gas source 3 is cut, NH3 gas and POCl3+H2 gas are supplied from a gas source 1 and a gas source 2. Accordingly a vapor phase reaction of gases mentioned above is performed in the reaction tube 10, and as a result, an insulating phosphoryl nitride film 13 is formed on the semiconductor crystal 12.

27. 发明专利

JPS57183076A FIELD CONTROL TYPE OPTICAL SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57183076A
公开(公告)日：1982-11-11
申请号：JP6880481
申请日：1981-05-07
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , KOBAYASHI TAKESHI
IPC分类号： H01L31/10 , H01L31/113
摘要： PURPOSE:To obtain photoconductivity corresponding to the intensity of light by letting an optical filter into a region between two electrodes on an intrinsic semiconductor substrate through a transparent electrode and insulation film. CONSTITUTION:An intrinsic semiconductor substrate 1 is provided and electrodes 3 and 4 are formed by ohmic formation on its main surface 2. A transparent electrode 12 is formed on a region 5 between the electrodes 3 and 4 on the substrate 1 via a transparent insulation layer 11 which is formed on the side of the main surface 2. The light 6 is let incident into the side of the main surface 2 of the region 5 on the substrate 1 through the insulation layer 11 and the electrode 12. With this constitution, the photoconductivity corresponding to the intensity of the light can be obtained and the corresponding photoelectric current can be supplied to a load.

28. 发明专利

JPS5712570A SEMICONDUCTOR PHOTOELECTRIC CONVERTER 失效
公开(公告)号：JPS5712570A
公开(公告)日：1982-01-22
申请号：JP8730480
申请日：1980-06-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： KOBAYASHI TAKESHI , YAMAGUCHI EIICHI , OKAMURA MASAMICHI
IPC分类号： H01L31/10 , H01L31/113
摘要： PURPOSE:To obtain a semiconductor photoelectric converter being able to respond in a high speed even to minute light and having a favorable SN ratio by a method wherein two layers having low specific resistance are provided on the main face of a semi-insulating semiconductor substrate, and a transparent electrode is arranged on the main face between the layers interposing an insulating film between them. CONSTITUTION:The N type layers 33, 34 are provided on the semi-insulating InP substrate 31, and the transparent Au electrode 37 is attached on the Al2O3 film 36, an Au-Ge-Ni electrode 39 is on the main face 38, and electrodes 40, 41 of the same material is attached also on the layers 33, 34. An electric power source 51 is connected between the electrodes 40, 41 through a load 52, and an electric power source 53 is connected between the electrodes 37, 40. When light 54 is irradiated to a region 35 in the condition being applied a voltage Vg between the electrodes 37-40, quasi-energy band responding to Vg is transferred to the conductive band side is accordance with light 54, doubling effect of carriers is generated, carriers reach the electrodes 40, 41 through the N type layers 33, 34, and a current responding to strngth of light 54 is supplied to the load 52. Because carriers generated in the region 35 are used as they are, the device responds in a high speed, responds to minute light and no noise is accompanied.

29. 发明专利

JPS56169377A LIGHT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56169377A
公开(公告)日：1981-12-26
申请号：JP7308680
申请日：1980-05-30
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： YAMAGUCHI EIICHI , KOBAYASHI TAKESHI
IPC分类号： H01L31/10 , H01L31/109
摘要： PURPOSE:To flow a current responsive to the light emission amount in high efficiency at the load side from a current source by forming a hetero junction between other semi-insulating semiconductor layer having a sufficiently thin thickness capable of ignoring the absorption of the light and a light receiving region. CONSTITUTION:A hetero electrode 12 is formed between a semi-insulating semiconductor layer 11 having a sufficiently thin thickness capable of ignoring the absorption of the emitted light 10 and a forbidden band width larger than the energy hnu, where h represents Planck's constant and nu represents the number of vibration of the light 10, of the light 10 emitted as compared with the forbidden band width of a semi-insulating semiconductor layer 1 and a light receiving electrode 6. Thus, the recombination center is eliminated at the boundary between the layers 1 and 11, and thereby the current responsive to the light emission amount to the region 7 of the light 10 through the region 7 can flow at the load 9 side from the voltage source 8.

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