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21. 发明专利

JPS62232180A SUPERCONDUCTING MATERIAL 失效
公开(公告)号：JPS62232180A
公开(公告)日：1987-10-12
申请号：JP7525986
申请日：1986-04-01
申请人： KOBE STEEL LTD
发明人： HIRAI HIROSHI , KAWATE TAKEO , NAKAGAMI AKIMITSU , TOJO SHIGEKI , NISHIMURA KOZO
IPC分类号： H01B12/06 , C23C14/06 , C23C14/32 , C23C28/04 , H01L39/12
摘要： PURPOSE:To obtain a superconducting material having a high critical temperature, by forming at least one metal compound, which is selected in a group comprising NbC, TiN, TiC, ZrN, HfN, TaN and TaC, between a substrate and NbN. CONSTITUTION:Titanium, which is ionized with an electron beam, is evaporated on a negative-voltage applied substrate, which is provided in an activating- reaction evaporating apparatus, in an N2 atmosphere. Thus a TiN coating film is formed. With the N2 atmosphere and other conditions being maintained, the ionized metal is changed into niobium. Then an NbN layer is formed on the TiN coating film. The NbN has high temperature (400 deg.C) directly after the evaporation, but the NbN is immediately quenched. The NbN is gradually grown into a crystal having a delta-phase structure, with the delta phase in the TiN coating film as a core. Finally the NbN film having delta-phase ratio is obtained. Thus the superconducting material having the NbN film characterized by high critical temperature can be obtained.

22. 发明专利

JPS59217225A Base plate for magnetic disc 失效
标题翻译：磁盘基板
公开(公告)号：JPS59217225A
公开(公告)日：1984-12-07
申请号：JP9129083
申请日：1983-05-24
申请人： Kobe Steel Ltd
发明人： YAMADA YASUYUKI , HIRAI HIROSHI , NAKAGAMI AKIMITSU , KAWAGUCHI MASAHIRO , KITAO YOSHINOBU
IPC分类号： G11B5/66 , G11B5/73 , G11B5/738 , G11B5/82 , G11B5/85 , G11B5/64
CPC分类号： G11B5/7315
摘要： PURPOSE:To provide a base plate which has excellent surface accuracy after polishing with less defects such as projections and holes and is highly resistant to wear and heat treatment by providing the film deposited by evaporation of any one among Si, TiN and Si3N4 in a specific thickness range on the surface of an aluminum alloy base plate. CONSTITUTION:A PVD or CVD method of vapor deposition by resistance heating, vapor deposition by an electron beam, ion plating, sputtering, etc. is used for forming the film deposited by evaporation on a base plate for a magnetic disc. The temp. of the aluminum alloy base plate in the stage of forming the thin film is =10mum thickness and is economically wasteful.
摘要翻译：目的：提供一种在抛光后具有优异的表面精度的基板，具有较少的突起和孔缺陷，并且通过将特定的Si，TiN和Si 3 N 4中的任一种蒸发沉积的膜提供，耐高温耐磨和热处理铝合金基板表面的厚度范围。构成：通过电阻加热，通过电子束气相沉积，离子镀，溅射等的PVD或CVD方法用于将通过蒸发沉积的膜形成在用于磁盘的基板上。温度在考虑处理时的基板的变形等时，形成薄膜的阶段的铝合金基板的厚度为<= 400℃，更优选<= 350℃。温度需要每次充分选择热处理作为具有膜厚和基板温度的薄膜的耐热处理。在治疗阶段。通过蒸发沉积的膜的厚度在Si，TiN和Si 3 N 4中的任一个之间为1-10μm。空洞缺陷如孔难以在<= 1m厚度厚度和satn处消除。出现在= 10m厚度，并且在经济上是浪费的。

23. 发明专利

JP2002088480A PLASMA SURFACE TREATING APPARATUS 失效
公开(公告)号：JP2002088480A
公开(公告)日：2002-03-27
申请号：JP2000276648
申请日：2000-09-12
申请人： KOBE STEEL LTD , MORI YUZO
发明人： MORI YUZO , INOUE KENICHI , NAKAGAMI AKIMITSU , ISHIBASHI KIYOTAKA , KOBAYASHI AKIRA , HAYASHI KAZUYUKI , GOTO YASUSHI
IPC分类号： C23C16/54 , C23C16/509 , H01L21/205 , H01L21/304 , H01L31/04
摘要： PROBLEM TO BE SOLVED: To provide a plasma surface treating apparatus in which a belt-like base board is supported by a support means for the substrate and is confronted with a rotary electrode, and further, while the belt-like base board is continuously carried, plasma is generated between the rotary electrode and the belt-like base board to subject the belt-like base board to surface treatment, and a space between the belt-like base board and the rotary electrode can be held to high precision of 0.1 to 1 mm. SOLUTION: In this plasma surface treating apparatus, as a support means for the base board, a columnar or cylindrical rotor is used, and the rotary shaft of the rotor and the rotary shaft of the rotary electrode are parallelly arranged.

24. 发明专利

JP2001035798A FILM-FORMING APPARATUS 失效
公开(公告)号：JP2001035798A
公开(公告)日：2001-02-09
申请号：JP20316899
申请日：1999-07-16
申请人： KOBE STEEL LTD , MORI YUZO
发明人： MASUI TAKUYA , HAYASHI KAZUYUKI , TAKAHASHI TOSHIAKI , NAKAGAMI AKIMITSU , OSADA KOICHI , INOUE KENICHI , MORI YUZO
IPC分类号： H01L21/205 , C23C16/505
摘要： PROBLEM TO BE SOLVED: To smoothly, efficiently and precisely form and laminate a plurality of kinds of films, without making a film-forming chamber larger or increasing the number of chambers. SOLUTION: A plurality of film forming chambers 10p, 10i, 10n corresponding to respective films to be laminated are provided, and films are formed by plasma CVD in respective film-forming chambers in this film forming apparatus. A fixed electrode 16 is provided as a plasma-generating electrode in the film forming chambers 10p, 10n, where thin films are formed. A rotating electrode 18, rotating in the vicinity of a substrate, is provided in the film forming chamber 10i for forming a thick film. There is also provided a carrier table 12 for moving the substrate with respect to the rotating electrode 18.

25. 发明专利

JPH03265825A OPTICAL MODULATING SEMICONDUCTOR ELEMENT 失效
公开(公告)号：JPH03265825A
公开(公告)日：1991-11-26
申请号：JP6590190
申请日：1990-03-15
申请人： KOBE STEEL LTD
发明人： MATSUI YUICHI , NARITA KATSUHIKO , NAKAGAMI AKIMITSU
IPC分类号： G02F1/35 , H01L27/00
摘要： PURPOSE:To change the output light intensity with respect to input light intensity according to the intensity of probe light as information by irradiating this element with the probe light absorbed by the window layer alone and the input light absorbed by the superlattice structure part alone from a window layer side and taking out the output light through the superlattice structure part. CONSTITUTION:The superlattice structure part 12 and the window layer 13 are successively crystal-grown on one main surface of a semiconductor substrate 11 and a transparent rear electrode 14 is formed on the surface of the substrate 11 on the side opposite form the superlattice structure part 12 side thereof. Further, a transparent front electrode 15 is formed on the front surface of the window layer 13. The probe light intensity is then changed by impressing a specified bias voltage with the electrode 15 side made as negative between the two electrodes 14 and 15 and making the input light and probe light having the specified intensity incident from the electrode 15 side. Consequently, the intensity of the output light taken out through the electrode 14 with an increase in the probe light intensity decreases. The output light intensity with respect to the input light intensity is continuously changed in this way according to the probe light intensity.

26. 发明专利

JPH03203226A SEMICONDUCTOR THIN-FILM FORMING METHOD 失效
公开(公告)号：JPH03203226A
公开(公告)日：1991-09-04
申请号：JP34460689
申请日：1989-12-28
申请人： KOBE STEEL LTD
发明人： MATSUI YUICHI , NARITA KATSUHIKO , NAKAGAMI AKIMITSU
IPC分类号： H01L21/203
摘要： PURPOSE:To prevent contamination of the surface of a semiconductor thin film due to impurity atoms by forming the semiconductor thin film, forming a specific protection film on the surface, and then carrying it to a second growth chamber. CONSTITUTION:After forming an n-type III-V compound semiconductor thin film for example as a conductive type by the MBE method in a first growth chamber 2, a protection film consisting of a V element constituting this n-type III-V compound semiconductor thin film is formed on the surface, and then it is carried to a second growth chamber 3. Then, a III-V compound semiconductor multilayer structure with a pn junction is formed within the second growth chamber 3 by the MBE method. In that case, by increasing the temperature of the substrate, only the protection film consisting of V elements evaporates along with impurity atoms being adhered during transportation due to high evaporation pressure of the V element and omitted, thus keeping the surface of the n-type III-V compound semiconductor thin film to be clean.

27. 发明专利

JPH03105974A MANUFACTURE OF SCHOTTKY DIODE BY SYNTHESIZING POLYCRYSTALLINE DIAMOND THIN FILM 失效
公开(公告)号：JPH03105974A
公开(公告)日：1991-05-02
申请号：JP24439989
申请日：1989-09-19
申请人： KOBE STEEL LTD
发明人： MIYATA KOICHI , KUMAGAI KAZUO , KOBASHI KOJI , MATSUI YUICHI , NAKAGAMI AKIMITSU
IPC分类号： H01L21/205 , H01L21/04 , H01L21/20 , H01L21/285 , H01L29/16 , H01L29/45 , H01L29/47 , H01L29/862 , H01L29/872
摘要： PURPOSE:To obtain a Schottky diode whose characteristic is good by a method wherein, when a polycrystalline diamond thin film is synthesized, CH4/H2 gas is used as a raw material and a concentration of B/C in the gas is specified. CONSTITUTION:Microwaves are oscillated by a power supply 1 ; they are guided to a reaction chamber 6 by using a waveguide 5 via an isolator 2, a power monitor 3 and a tuner 4. The reaction chamber 6 is made of a quartz tube; it is bored perpendicularly through the waveguide 5; a substrate 7 is placed in a crossed part inside the chamber. CH4/H2 gas is introduced into the chamber and is irradiated with the microwaves. Thereby, a plasma is generated so as to surround the substrate; a polycrystalline diamond thin film is formed on the substrate. When B/C of B gas added at this synthesis is set at 0.01ppm or higher and 20ppm or lower, it is possible to manufacture a good Schottky diode.

28. 发明专利

JPH02310433A METHOD AND DEVICE FOR DETECTING POSITION AND DISPERSION OF LIGHT INPUT 失效
公开(公告)号：JPH02310433A
公开(公告)日：1990-12-26
申请号：JP13152289
申请日：1989-05-26
申请人： KOBE STEEL LTD
发明人： NAKAGAMI AKIMITSU , ONISHI YOSHIHIKO , TACHIBANA HIROYUKI , INOUE TAKAYOSHI , NISHIMOTO YOSHIRO , YONEDA YASUSHI , IMAOKA SHINICHI , NAKAI YASUHIDE
IPC分类号： G01B11/00 , G01J1/44 , G01N21/88 , G02B7/32
摘要： PURPOSE:To detect the position of a light input and the information of dispersion with accuracy by detecting a primary output which is proportioned to the mean value of a distance between the end part of a photoelectric converting body and the position of the light input and a secondary output which is proportioned to the square mean value of the distance. CONSTITUTION:At first, the light intensity of the light input is obtained by using the photoelectric converting bodies 19-1 to 19-3 and also the 1st or the 2nd mean value of the distance from the one end part or the other end part of the photoelectric converting bodies 19-1 to 19-3 which are weighted by the light intensity to the position of the light input and the 1st or the 2nd square mean value of the distance from the one end part or the other end part of the photoelectric converting bodies 19-1 to 19-3 to the position of the light input are detected. And then, after fetching the primary output which is proportioned to the 1st or the 2nd mean value of the distance between the photoelectric converting bodies 19-1 to 19-3 on the basis of the detected light intensity and the 1st or the 2nd mean value, and also fetching the secondary output which is proportioned to the square mean value of the distance between the photoelectric converting bodies 19-1 to 19-3 on the basis of the detected light intensity and the 1st or the 2nd square mean value, the position of the light input is calculated and furthermore, the dispersion of the light input is calculated on the basis of the primary and the secondary outputs.

29. 发明专利

JPS63212832A DETECTION OF POSITION AND VARIANCE OF LIGHT INPUT AND INSTRUMENT FOR THE SAME 失效
公开(公告)号：JPS63212832A
公开(公告)日：1988-09-05
申请号：JP23094687
申请日：1987-09-17
申请人： KOBE STEEL LTD
发明人： NISHIMOTO YOSHIRO , YONEDA YASUSHI , IMAOKA SHINICHI , NAKAI YASUHIDE , NAKAGAMI AKIMITSU , ONISHI YOSHIHIKO , TACHIBANA HIROYUKI , INOUE TAKAYOSHI , KUSAKA TAKUYA , TAKAMATSU HIROYUKI , TOJO SHIGEKI , KAJIKAWA HIROSHI , NISHIMURA KOZO
IPC分类号： G01B11/00 , G01J1/02 , G01M11/00 , G01N21/88 , H01L27/14 , H01L31/02 , H01L31/0216 , H01L31/16
摘要： PURPOSE:To obtain the position and the variance of light input with ease at a low cost and with a quick response by detecting primary output proportional to the mean value of distances between the ends of a photoelectric transducer and the position of light input and secondary output proportional to square mean value of said distances. CONSTITUTION:Primary output is detected by current values i1 and i2 obtained from both the ends 4 and 5 of a first resistance layer 1. On the other hand, secondary output is detected by current values j1 and j2 obtained from both the ends 6 and 7 of a second resistance layer 2. From the values of detected current, K10.integral x.rho(x)dx/integral rho(x)dx is obtained as the primary output proportional to the mean value (position of center of gravity) inversion (x) of distances between the ends 4-7 of a photoelectric transducer and a light input position A. Further, K20.integral x .rho(x)dx/integral rho(x)dx is obtained as the secondary output proportional to the square mean value inversion x of said distances. Based on those outputs, a light input position inversion (x) is detected as integral x.rho(x)dx/integral rho(x)dx and the variance sigma of light input is detected by formula I.

30. 发明专利

JPS63142629A MANUFACTURE OF FILM GRATING PATTERN 失效
公开(公告)号：JPS63142629A
公开(公告)日：1988-06-15
申请号：JP28919086
申请日：1986-12-04
申请人： KOBE STEEL LTD
发明人： TOJO SHIGEKI , HIRAI HIROSHI , NAKAGAMI AKIMITSU
IPC分类号： H01L21/205 , H01L21/263
摘要： PURPOSE:To be able to efficiently form the patterns of an LSI and a diffraction grating by photovoltaically reacting reaction gas through the interference moire of a laser beam to deposit the fine pattern on a substrate surface. CONSTITUTION:After a laser beam 2 irradiated from a laser light source 1 passes a pinhole 3 and a beam expander 4, it is reflected on a mirror 5, and then divided by a half mirror 6 into two laser beams 2a, 2b. The beams 2a, 2b are respectively reflected on mirrors 7, fed through the optical windows 9, 9 of a vacuum vessel 8, and irradiated to the surface of a substrate 10 disposed in the vessel 8. Thus, the beams 2a, 2b are interfered from one another. As a result, an interference moire is generated on the surface of the substrate 10. When reaction gas which becomes the material of a pattern flows on the surface of the substrate 10 through a gas introduction tube 12 in this state, the reaction gas is photovoltaically reacted in the section of the interference moire, its product is deposited on the substrate 10, thereby forming the pattern equivalent to the interference moire.

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