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    • 26. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPH10335642A
    • 1998-12-18
    • JP14742597
    • 1997-06-05
    • HITACHI LTDHITACHI TOBU SEMICONDUCTOR LTDHITACHI MICROCOMPUTER SYST
    • MARUYAMA YASUONAKURA KENICHISATO TAKAHIRONAGANO HIROMI
    • H01L29/78
    • PROBLEM TO BE SOLVED: To prevent increase of source wiring resistance which is caused by increase of length of stripes, by forming conductor layers which brings an electrode conductor layer in continuity with a source leading-out wiring connected with a source region, on a semiconductor substrate in the respective stripe parts. SOLUTION: A source leading-out wiring 10 connected with the source region 8 of an MISFET has a continuity with a substrate conductor layer 1, in a linkage part, through a connecting layer 12 formed in a semiconductor substrate. The substrate conductor layer 1 has a continuity with a source electrode 13 formed on the back of the substrate conductor layer 1 as a facing surface of the semiconductor substrate main surface, and an electrode conductor layer is constituted of the source electrode 13 and the substrate conductor layer 1. The source leading-out wiring 10 and the substrate conductor layer 1 are connected, in the respective stripe parts, through conductor layers 14 formed on the semiconductor substrate between the respective cells of the respective stripe parts divided into a plurality of cells. Thereby increase of source wiring resistance which is to be caused by increase of length of the stripes can be prevented.