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    • 23. 发明专利
    • EXPOSING DEVICE FOR ELECTRON BEAM
    • JPS57172724A
    • 1982-10-23
    • JP5630381
    • 1981-04-16
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIMAZU NOBUO
    • H01L21/027H01J37/302H01L21/30
    • PURPOSE:To utilize the effective beam current to the utmost extent as well as to perform a variable forming beam exposure in which the effect of space charge is reduced for the subject exposing device by a method wherein the control signal for the irradiation angle and the center position of irradiation of the beam is generated on the circuit wherein irradiation information will be processed. CONSTITUTION:The irradiating position is controlled 19 by interpreting the input data pertaining to irradiation and by outputting the information for deflection in accordance with the position of irradiation. At the same time, the angle of irradiation theta for the formation aperture 6 is calculated taking into consideration the size of the beam, the angle theta is controlled 17, and the center position of irradiation is controlled 16. When the voltage of a deflector 13 is controlled 18, the irradiation distribution is converted into a patternings 23 or 24 in proportion to the beam size along the axis of coordinates, and the beam size and the position of irradiation are determined. Subsequently, by controlling 15 the time of irradiation, the formed beam is irradiated on the prescribed position of a sample 11 for the period of time as prescribed. According to this constitution, the position and expansion of the beam distribution is controlled at a point above the surface of the first formation aperture 6 in accordance with the beam size, an effective beam can always be utilized to the utmost extent, and no correction of space charge effect is required, because the change in the total current value of the beam on the sample is very small.
    • 24. 发明专利
    • METHOD FOR CORRECTING DISTORTION OF ELECTRON BEAM EXPOSURE DEVICE AND CIRCUIT THEREOF
    • JPS55102231A
    • 1980-08-05
    • JP850479
    • 1979-01-27
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIBAYAMA AKINORISHIMAZU NOBUO
    • H01L21/027H01J37/304
    • PURPOSE:To provide pictures to the sample that moves continuously by adding both the quantity of movement of the sample location from the measurement of distortion to the correction of picturing data and the quantity of compensation of deflection location to the picturing data which is obtained by correcting the distortion of the shape of sample. CONSTITUTION:First, the marks at four corners of the area (1, 1) are detected, previously held correction values 12, 13 are subtracted from the measured values 10, 11 of the sample location to compensate the measured values. On the other hand, the area (1, 1) is divided into the form of a matrix, the quantity of distortion correction corresponding to the central coordinates of each element area is stored 5, read by the signal 3, 4, addition and subtraction are applied to it to compensate the location 1, 2 given by the distortion of the shape of sample. The data, which are obtained by applying the addition and subtraction to the corrected outputs 18-21, are compensated 31, 32 by previously stored deflection location errors that are read by the signals 26, 27. By repeating the operation, the picture can precisely be provided to the desired position of the sample that moves continuously. Also the correction factors can be computed by the circuits 5, 28, the location error of a sample that moves at the speed of about 20mm/sec is 0.02mum per 1mu sec of the operation time.
    • 25. 发明专利
    • DETECTING DEVICE OF MARKING POSITION FOR ELECTRON BEAM EXPOSURE APPARATUS
    • JPS5595325A
    • 1980-07-19
    • JP177379
    • 1979-01-13
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIMAZU NOBUOMATSUDA KOREHITOMORIYA SHIGERU
    • H01L21/027H01J37/304
    • PURPOSE:To detect a marking position of a large-sized chip with superior reproducibility and accuracy at high speed without moving a wafer by deflecting a beam using a large region deflecting power source. CONSTITUTION:Switches 13-16 are first turned off and a base mark 8 is transferred to a place near a light axis for detecting its position, then x coordinates L1+M1 are detected 10 and calculated 22 from the read-out L1 and the quantity of deflection M1 of a length measuring instrument 9. Next the switch 13 is turned on, and a board 6 is moved for approximately -l in an x direction so as to measure 9 the actual volume of transference L2. A beam is deflected 5 by a base voltage 17 by -l. When the deflection volume of the mark is M2, L2+M2-M1 becomes the volume of deflection based on the base voltage 17. In the same manner, the volume of deflection calibrated in reference to basic constant-voltage regulated power sources 18-20 is stored in a calculator 22. For detecting a mark 28, if the switches 13, 16 are turned on, the beam is discovered in the neighborhood of the mark 28. Thus, if the volume of deflection M3, M4 is obtained in the directions of x, y after detecting the mark, mark coordinates can be calculated. According to the construction, it is unnecessary to move the board for each mark, and an inexpensive and highly accurate detecting device can be obtained.
    • 26. 发明专利
    • MEASURING METHOD FOR DISTRIBUTION OF ELECTRON BEAM CURRENT DENSITY
    • JPS5513874A
    • 1980-01-31
    • JP8669978
    • 1978-07-18
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIMAZU NOBUO
    • G01T1/29H01L21/027
    • PURPOSE:To make measurement under no influence of a noise by intermittently emitting an electron beam modulated by a blanking signal and then by extracting only the same frequency component as the blanking signal from the output of an electron beam detector by using a frequency analyzer. CONSTITUTION:To measure the current density distribution of electron-beam irradiation region 15, movable table 6 is driven first according to the program of information processor 11 to move detection part 5 into the irradiation region of electron beam 12 and deflection unit 4 is used to shift irradiation region 15 according to the steps sectioned in the direction of XY2. The order of this displacement allows the expansion or contraction of each unit section with the displacement in the direction of XY2 and the output of detector 5 at each position is processed by frequency analyzer 10 to extract only the amplitude value of the same frequency component as the blanking signal. Then, the extracted component amplitude value is processed to obtain the variation in beam current of each unit section, thereby forming the two-dimensional electron-beam current density distribution.
    • 28. 发明专利
    • CHARGED BEAM DRAWING DEVICE
    • JPH097538A
    • 1997-01-10
    • JP15906395
    • 1995-06-26
    • NIPPON TELEGRAPH & TELEPHONE
    • SHIMAZU NOBUOSAITO KENICHI
    • H01J37/305H01L21/027
    • PURPOSE: To reduce coulomb effect to form a fine charged beam image by a high electric current, by dividing a charged beam, emitted from an electron gun, into plural charged beam groups. CONSTITUTION: An electron, emitted from the crossover 11 of an electron gun, becomes a parallel beam by the action of an irradiation lens 14 to be incident into an Einzel lens 15 constituting a multi-charged beam optical system. The lens 15 has plural circular openings arranged in a matrix state, to divide an incident electron beam into plural electron beams. Consequently, the electric current values of the respective electron beam are made small to reduce Coulomb effect and the fading of the electron beam, The electron beam, passed the lens 15, passes a blanking aperture 17 to receive imaging action by an Einzel lens 19, and acceleration action by a rear stage acceleration electrode 20. Then, the electron beam passes an atmospheric takeout part 21 to form the image of the original crossover 11 onto a specimen 22 such as a wafer or a mask.