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21. 发明专利

JPH03236280A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH03236280A
公开(公告)日：1991-10-22
申请号：JP3138590
申请日：1990-02-14
申请人： HITACHI LTD
发明人： MUSHA SHUJI , KAMIDA YUKIO , KUROSU TOSHIKI
IPC分类号： H01L29/78 , H01L29/739
摘要： PURPOSE:To eliminate to exceed a restarting forward voltage when a switching element such as an IGBT, etc., interrupts a current over the sustain voltage of the element by setting the avalanche voltage of a transistor to a higher voltage than a breakdown voltage of free wheeling diode. CONSTITUTION:This semiconductor device has an IGBT1, and a free wheeling diode 2 connected in anti-parallel between the collector and the emitter of the IGBT1. The avalanche voltage VAVL of the IGBT1 is set to a higher voltage than the breakdown voltage VBD of the diode 2. Thus, when an insulated gate type transistor is turned OFF, even if a voltage is applied between the collector and the emitter, no avalanche current flows to the transistor. Accordingly, it can prevent the current breakdown resistance of the transistor from decreasing.

22. 发明专利

JPS6278857A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6278857A
公开(公告)日：1987-04-11
申请号：JP21623985
申请日：1985-10-01
申请人： HITACHI LTD
发明人： SATO SEIZO , NAKAJIMA YOICHI , KUROSU TOSHIKI , KOTSUJI NORITOSHI
IPC分类号： H01L23/29 , H01L23/31
摘要： PURPOSE:To prevent the breakage of a semiconductor chip and the breakage of an insulating plate by making the average grain diameter of the solid body fillers in the semiconductor element sealing resin larger than the average distance between the hollow body fillers in the mixed state in the resin. CONSTITUTION:A semiconductor element 1 is sealed with a resin 12. At this time, the resin 12 is formed of solid body fillers 11 and hollow body fillers 13. The average grain diameter of the fillers 11 is made larger than the average distance between the fillers 13 is the mixed state in the resin. With this structure, a semiconductor mold structure can be obtained with one injection of the resin, which structure causes no breakage of the element 1 and no breakage of the insulating plate.

23. 发明专利

JPS59227141A INSULATING MOLD TYPE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS59227141A
公开(公告)日：1984-12-20
申请号：JP10071283
申请日：1983-06-08
申请人： HITACHI LTD
发明人： OOTAKA HIROMI , KOJIMA ISAO , KUROSU TOSHIKI , KOTSUJI NORITOSHI
IPC分类号： H01L23/24 , H01L21/50 , H01L23/053 , H01L23/02
摘要： PURPOSE:To improve barrier properties between a semiconductor chip and the atmosphere by arranging an inner case so as to cover the semiconductor chip and filling molding resin between the inner case and a cylindrical insulating plate. CONSTITUTION:In circumferential portion of the inside of element, an inner resin case is bonded to an insulating plate 3 by the resin-group adhesive 14b and further an outer resin case 15 is bonded to a radiation plate by the resin-group adhesive 15b. In this constitution, the molding resin 10 is filled in the space between the cases 14 and 15 and the inside of the case 14 is kept hollow. Because the inside of the element is hollow, thermal stress does not affect a pellet 7 directly even under conditions of large temperature differential, and the isolating distance between the atmosphere and the inside of the element can be enlarged, thereby improving the reliability of isolation.

24. 发明专利

JPS57132332A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57132332A
公开(公告)日：1982-08-16
申请号：JP1697681
申请日：1981-02-09
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： YAGIHARA TOSHIKI , NAKASHIMA YOUICHI , MIURA MASATAMI , KUROSU TOSHIKI , KOJIMA ISAO
IPC分类号： H01L21/52 , H01L21/58 , H01L23/48
摘要： PURPOSE:To increase insulated creeping distance by applying a bending processing to a terminal toward the inside of a ceramic plate at the part close to the ceramic plate in an insulating type semiconductor. CONSTITUTION:A metal radiation substrate 1 is adhered to a main surface of a ceramic plate 3 having electrical insulation through a soldering layer 2. And a metal terminal 6 flowing a current into a semiconductor substrate mounted on the ceramic plate 3 is adhered to the other main surface through a metalized layer 4. At that time, a bending processing such as a terminal bending processing section 6a is applied at the part close to the metalized layer 4 without changing the position at the external part of the terminal exposed to the outside. Furthermore, the external peripheral wire of the ceramic plate 3 and the external peripheral fringe of the metalized layer 4 adhering solder are detached to increase the space AB of insulated creeping distance.

25. 发明专利

JPS57130440A INSULATING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57130440A
公开(公告)日：1982-08-12
申请号：JP1568081
申请日：1981-02-06
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： NAKASHIMA YOUICHI , KUROSU TOSHIKI , MIURA MASATAMI , OOTAKA HIROMI , YAMAZAKI TATSUO
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To elongate insulating creeping distance when a semiconductor element and a terminal are fixed interposing a metalized layer on the surface of a ceramic plate having a heat radiating metal plate on the back, and it is sealed with resin to constitute an insulating semiconductor device by a method wherein a notch is provided to the lower part of the terminal at the position nearby the outside circumference of the ceramic plate. CONSTITUTION:A heat radiating metal plate 1 is adhered on the back of a ceramic plate 3 interposing a solder layer 2 between them, and a metalized layer 4 is formed on the surface of the ceramic plate 3. Then a semiconductor element 10 is fixed on the layer 4 interposing a solder layer 11 between them, a terminal 6 is fixed at the prescribed distance using a solder layer 5, and the element 10 is molded with resin 7 exposing the tip end of the terminal 6. At this constitution, the notch 6a is provided to the lower end of the terminal 6, and accordingly length of the metalized layer 4 is made to short, and the creeping distance between the part A of the notch 6a and the end part B of the solder layer 3 is elongated to ensure dielectric strength.

26. 发明专利

JP2003303939A Power semiconductor device and inverter device 审中-公开
标题翻译：功率半导体器件和逆变器器件
公开(公告)号：JP2003303939A
公开(公告)日：2003-10-24
申请号：JP2002104955
申请日：2002-04-08
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： ISHIKAWA KATSUMI , IKIMI TAKASHI , TOYODA EIICHI , OKAMATSU SHIGETOSHI , KUROSU TOSHIKI , MORI MUTSUHIRO , SAITO RYUICHI , SEKINE SHIGEKI , KATO SHUJI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48 , H02M7/483 , H02M7/5387
CPC分类号： H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To obtain a miniaturized IGBT module, even when a received AC voltage is high, in order to miniaturize an inverter device for driving a motor. SOLUTION: Projected walls made of a resin, which are higher than screws, and recessed parts (grooves), lower than the lower ends of terminals, are provided between neighbored AC terminals and DC terminals or in between neighbored two DC terminals between respective screwed surfaces so as to be continuous with the projected walls. According to this method, the insulation spatial distance between adjacent terminals neighbored by the high projected walls is secured and the insulation creeping distance between terminals neighbored by the recessed and projected parts by the continuation of projected walls and recessed parts, is secured whereby the highly pressure-resistant IGBT module, having a high density and miniaturized, is realized. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了获得小型化的IGBT模块，即使接收的交流电压高，为了使用于驱动电动机的逆变器装置小型化。
解决方案：在相邻的交流电源端子和直流端子之间或相邻的两个直流端子之间，设置有比螺钉高的树脂制成的突出的壁和比端子的下端低的凹陷部分（凹槽）相应的螺纹表面，以便与突出的壁连续。根据该方法，确保由高投影壁相邻的相邻端子之间的绝缘空间距离，并且通过延伸的突出壁和凹陷部分由凹入和突出部分邻接的端子之间的绝缘爬电距离被固定，由此高压力实现了高密度且小型化的IGBT模块。版权所有（C）2004，JPO

27. 发明专利

JPH11163698A OVERCURRENT SUPPRESSION CIRCUIT FOR VOLTAGE DRIVEN TYPE SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE PROVIDED WITH THE SAME 失效
公开(公告)号：JPH11163698A
公开(公告)日：1999-06-18
申请号：JP32267597
申请日：1997-11-25
申请人： HITACHI LTD
发明人： OIKAWA ATSUSHI , KUROSU TOSHIKI
IPC分类号： H02M1/00 , H02M1/06 , H03K17/08
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable overcurrent suppression circuit. SOLUTION: The collector terminal 2 of an insulation gate bipolar transistor(IGBT) 1 is connected to a clamp circuit 20, the voltage rise of the collector terminal 2 is detected, the clamp circuit 20 is operated and overcurrent suppression is performed. The clamp circuit 20 is operated when the voltage rise of the collector terminal 2 occurs when the gate-emitter voltage of the IGBT 1 is forward bias. At the time of normal switching, since the clamp circuit 20 is not operated, a gate driving circuit 21 is not influenced. Since the voltage rise of the collector terminal 2 of the IGBT 1 is detected and an overcurrent suppression operation is performed in such a manner, the influence of inductance is prevented.

28. 发明专利

JPH08298788A PARALLEL CIRCUIT OF DIODE AND IGBT, ITS MODULE, AND POWER CONVERTER USING THE SAME 失效
公开(公告)号：JPH08298788A
公开(公告)日：1996-11-12
申请号：JP13796196
申请日：1996-05-31
申请人： HITACHI LTD
发明人： KIMURA ARATA , MATSUDA YASUO , TOKUNAGA KIICHI , MORI MUTSUHIRO , KUROSU TOSHIKI , SUZUKI YUTAKA , SAKURAI NAOKI , YASUDA YASUMICHI , TANAKA TOMOYUKI , ONDA KENICHI
IPC分类号： H01L25/07 , H01L25/18 , H02M7/48 , H02M7/537 , H02M7/5387 , H02P7/288 , H03K17/16
摘要： PURPOSE: To prevent malfunction of an IGBT drive circuit due to noise by keeping the turn-on characteristics of an IGBT in harmony with diode recovery characteristics and suppressing overshoot voltage and a voltage vibration even at a high-speed operation of the IGBT. CONSTITUTION: An IGBT 29 and a diode 30 are connected in inverse parallel on a collector electrode plate 23. Also, the emitter of the IGBT 29 is connected to an emitter electrode plate 24, the gate is connected to a gate electrode plate 25, and the anode of the diode 30 is connected to the emitter electrode plate 24 by a wire. A capacitor 31 is connected between the collector electrode plate 23 and the emitter electrode plate 24. Then, by increasing the parasitic capacitance of the IGBT and diode or connecting a capacitor instead, the peak value of a voltage vibration can be reduced. The peak value of the overshoot voltage is suppressed to 1/3 or less of a rated voltage.

29. 发明专利

JPH04206576A 失效
公开(公告)号：JPH04206576A
公开(公告)日：1992-07-28
申请号：JP32917990
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI HARAMACHI DENSHI KOGYO
发明人： TAKENOCHI HIDEKI , KUROSU TOSHIKI , HOSOYA HIROMI
IPC分类号： H01L29/872 , H01L29/47 , H01L29/861 , H01L29/91 , H01L29/48
摘要： PURPOSE:To enable a high-speed type diode to be restrained from increasing in forward voltage and enhanced in reverse recovery characteristic by a method wherein the semiconductor substrate of the diode is set an off angle 3-5 degrees. CONSTITUTION:An N -type Si substrate 1 which is sliced at an angle of 4 degrees inclined to a inclination direction and whose primary face is a (100) plane is employed. An N epitaxial layer 2 is provided onto a substrate 1, and a P -type Si layer 3 in deep junction with the N-layer 2 and a P -type Si layer 4 in shallow junction with the N-layer 2 are formed so as to be alternately arranged at an adequate interval. An Al layer 6 is formed taking advantage of the opening of an SiO2 film 5, and a Cr layer 7 is deposited on the N substrate 1. When a reverse voltage is applied to a P-N junction, carriers in a region b small in thickness in the N-layer are quickly lessened in number, and carriers in a region large in thickness are gradually decreased in number. Therefore, a semiconductor device of this design has such characteristics that di/dt is small at a reverse recovery or the device recovers softly at a reverse recovery.

30. 发明专利

JPS6292344A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6292344A
公开(公告)日：1987-04-27
申请号：JP23121385
申请日：1985-10-18
申请人： HITACHI LTD
发明人： KOTSUJI NORITOSHI , TAKAHASHI MITSUO , KUROSU TOSHIKI , NAKAJIMA YOICHI
IPC分类号： H01L23/28 , H01L23/24 , H01L23/34
摘要： PURPOSE:To prevent the cracking of a semiconductor element by making solid body fillers contain near the semiconductor element and hollow body fillers contain into a region separate from the semiconductor element in large quantities respectively. CONSTITUTION:A semiconductor element 1 is placed onto a radiator plate 2, and the periphery is sealed with an insulating resin. In this case, a section in the vicinity of the element 1 is formed by a region 8 containing a large quantity of solid body fillers, and a region separate from the element 1 is shaped by a region 9 including a large quantity of hollow body fillers. The region 8 and the region 9 are formed by the difference of the specific gravity of the hollow body fillers and the solid body fillers. Accordingly, the cracking of the element 1 is prevented.

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