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21. 发明专利

JPH01238020A PLASMA PROCESSING DEVICE AND PROCESSING SYSTEM THEREFOR 失效
公开(公告)号：JPH01238020A
公开(公告)日：1989-09-22
申请号：JP6332488
申请日：1988-03-18
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： SUZUKI KAZUO , SONOBE TADASHI , OGAMI MICHIO , FUKUDA TAKUYA
IPC分类号： H01L21/302 , H01L21/205 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To realize a high efficiency, high quality radical processing by enabling a sample surface to be irradiated with a high density radical shielding any ion by disposing a mesh-like grid electrode between a sample and a boundary of produced plasma. CONSTITUTION:Microwaves 4 are introduced into a discharge tube 2 equipped with a coil 1 on the outside thereof through a waveguide 3, and a magnetic field from a magnetic field coil 1 and the microwaves 4 are applied to etching gas 5 introduced into the discharge tube 2 to produce plasma by electron cyclotron resonance. An enhancing magnetic field coil 9 is provided outside a sample chamber 8 which includes a sample table 7 for holding a sample 6. The sample chamber 8 is connected with the discharge tube 2. The direction of an enhancing magnetic field is opposite to the direction of the magnetic field generated by the magnetic field coil 1, both forming a cusp magnetic field orientation. Hereby, a boundary 11 of the plasma 12 on the side of the sample chamber 8 is formed. Further, a mesh-like grid electrode 10 having a positive potential is provided between the plasma boundary 11 and the sample table 7 to sharply reduce ions which can reach the sample 6.

22. 发明专利

JPH01222446A PLASMA TREATMENT DEVICE 失效
公开(公告)号：JPH01222446A
公开(公告)日：1989-09-05
申请号：JP4783588
申请日：1988-03-01
申请人： HITACHI LTD , HITACHI SERVICE ENG
发明人： FUKUDA TAKUYA , OGAMI MICHIO , MONMA NAOHIRO , SONOBE TADASHI , SUZUKI KAZUO
IPC分类号： H01L21/22 , H01L21/205 , H01L21/265 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To utilize effectively highly excited ions and to form a plasma treatment device into one having a high plasma treatment efficiency by a method wherein an electron cyclotron resonance(ECR) surface is generated within the range between the surface of a matter to be treated and the mean free path of the ions. CONSTITUTION:An ECR surface 13 is formed at a region where a flux density generated in the interior of a device by main magnetic field coils 9 and additional magnetic field coils 12 satisfies an ECR condition. As the surface 13 is formed within the range between the surface of a matter 1 to be treated and the mean free path of ions, the ions excited on the surface 13 are incided in the surface of the matter 1 to be treated without losing their excitation degrees by colliding with other ions, particles and so on. Moreover, by installing grids 14, to which alternating potential is applied, between the matter 1 and the surface 13, a translational energy is imparted to the ions without damaging the excitation energies of the ions and at the same time, the angles of the ions, which are incided in the surface of the matter 1, can be improved.

23. 发明专利

JPH01120800A SYNCHROTRON RADIATION GENERATING DEVICE AND ITS ASSEMBLY 失效
公开(公告)号：JPH01120800A
公开(公告)日：1989-05-12
申请号：JP27575587
申请日：1987-11-02
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE , HITACHI SERVICE ENG
发明人： IKEGUCHI TAKASHI , MATSUMOTO MANABU , UEDA SHINJIRO , SONOBE TADASHI , MURASHITA TATSU , IDO SATOSHI , KUROISHI KAZUO
IPC分类号： G21K5/02 , H05H13/04
摘要： PURPOSE:To make it possible to insert or take out an integrated pump without decomposition by extending one end of an integrated pump chamber on the inner circumferential side of a duct to the inside in the circumferential direction to be separated from a deflection beam duct. CONSTITUTION:An integrated pump chamber 3 partitioned by a conductive slit 7 is provided on the inner circumferential side of a deflection part beam duct 1, and a guide 12 on a circular arc is provided on the base of the integrated pump chamber, while the integrated pump 10 is fixed on the upper surface of an insulator 11. Further, the integrated pump chamber 3 is separated from a deflection part beam duct 1 at the end part for being extended toward the inner circumferential side so as to be connected to the circular integrated pump insertion port 2. The integrated pump 10 is linear, but the guide 12 on the underside in the integrated pump chamber and the guide on the underside of the insulator 11 are made circular. Thereby, insertion into the integrated pump chamber and conversely pulling out from the integrated pump chamber can be easily performed without decomposing an electromagnet or the like.

24. 发明专利

JPS63236300A SYNCHROTRON LIGHT RADIATION EQUIPMENT 失效
公开(公告)号：JPS63236300A
公开(公告)日：1988-10-03
申请号：JP6889987
申请日：1987-03-25
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE , HITACHI SERVICE ENG
发明人： IKEGUCHI TAKASHI , SONOBE TADASHI , MATSUMOTO MANABU , UEDA SHINJIRO , SHIBAYAMA AKINORI , KUROISHI KAZUO
IPC分类号： H05H13/04

25. 发明专利

JPS63228599A SYNCHROTRON EMITTED LIGHT GENERATOR 失效
公开(公告)号：JPS63228599A
公开(公告)日：1988-09-22
申请号：JP6098187
申请日：1987-03-18
申请人： HITACHI LTD , NIPPON TELEGRAPH & TELEPHONE , HITACHI SERVICE ENG
发明人： IKEGUCHI TAKASHI , SONOBE TADASHI , UEDA SHINJIRO , MATSUMOTO MANABU , KAZAWA YOSHIAKI , KAKIUCHI SHUNJI , MURASHITA TATSU , IDO SATOSHI , KUROISHI KAZUO
IPC分类号： H05H7/14 , H05H7/04 , H05H13/04

26. 发明专利

JPS62131513A MULTICHAMBER ISOLATION TYPE PLASMA CVD DEVICE 失效
公开(公告)号：JPS62131513A
公开(公告)日：1987-06-13
申请号：JP27142785
申请日：1985-12-04
申请人： HITACHI LTD
发明人： AZUMA KAZUFUMI , WATANABE TAKESHI , TANAKA MASAHIRO , NAKATANI MITSUO , SAEGUSA HIROYUKI , SONOBE TADASHI
IPC分类号： H01L31/04 , H01L21/205
摘要： PURPOSE:To obtain a Pin type semiconductor layer on which impurities can be controlled excellently by a method wherein p-type, i-type and n-type conductive amorphous semiconductors are formed on the film-forming surface of a substrate in the film-forming chambers dedicated to said respective amorphous semiconductors, and an electronic cyclotron resonance microwave plasma application part is annexed to one of the film-forming chambers. CONSTITUTION:A substrate holder 11 is electrically earthed and provided is such a manner that is can be moved between a p-chamber 1, an i-chamber 4, a loading/unloading chamber 7, and an n-chamber 9. Also, a substrate and a heating mechanism are attached to the substrate holder 11, and electrodes 2, 5 and 10 are porously formed so that reaction gas can be introduced. In the i-chamber 4, a microwave plasma application part A of electronic cyclotron is attached, microwaves are generated by a magnetron 17, and the microwaves are introduced into the i-chamber 4 via waveguides 15 and 16. When microwave power is supplied by introducing discharge gas into the i-chamber 4 by applying the prescribed pressure, microwave discharge is generated by the interaction of a microwave electric field and a magnetic field.

27. 发明专利

JPS6217654A IMAGE PICK-UP APPARATUS 失效
公开(公告)号：JPS6217654A
公开(公告)日：1987-01-26
申请号：JP15513685
申请日：1985-07-16
申请人： HITACHI LTD
发明人： TAKAHASHI FUMINOBU , KOIKE MASAHIRO , OGURA SATOSHI , YAMADA IZUMI , KOGA KAZUNORI , SONOBE TADASHI
IPC分类号： G01B15/02 , G01B17/02 , G01B17/06 , G01N22/00 , G01N23/04 , G01N29/06
摘要： PURPOSE:To make it possible to display a sharp detailed examination image, by allowing a measuring apparatus to determine the resolving power inherent to said apparatus and converting a measured spectrum corresponding to resolving power. CONSTITUTION:The contents of a reference shape memory 1 and a spectrum memory 2 having a measured result stored therein receive functional conversion by a Fourier transform device 9 corresponding to outputs '1', '0' of a change-over controller 3 to be separated into a real number part and imaginary number part while both parts are stored in a reference spectrum memory 10 and a gamma-spectrum memory 11 and the content of the memory 11 is further stored in an R-spectrum memory 12 through a spectrum divider 14. The contents of the memories 11, 12 are stored in an I-spectrum memory 13 through the divider 14 and subsequently converted by an inverse Fourier transform device 15, operated by a power operator 17 through a memory 16, converted by an address converter 19 through a power spectrum memory 18, again converted by a power converter 21 through a shift spectrum memory 20 and processed by an address converter 22 to be applied to an image display device 23 as a vertical/ horizontal deflection signal with predetermined voltage and an image having no blur is displayed.

28. 发明专利

JPS627859A FORMATION OF AMORPHOUS SILICON FILM 失效
公开(公告)号：JPS627859A
公开(公告)日：1987-01-14
申请号：JP14652885
申请日：1985-07-05
申请人： HITACHI LTD
发明人： WATANABE TAKESHI , AZUMA KAZUFUMI , TANAKA MASAHIRO , NAKATANI MITSUO , SONOBE TADASHI
IPC分类号： C23C16/24 , C23C16/48 , C23C16/50 , C23C16/511 , G03G5/08
摘要： PURPOSE:To obtain the titled film having high photoconductivity, large ratio between the photoconductivity and dark conductivity and excellent photoconductive characteristic in the titled method utilizing electron cyclotron resonance plasma by specifying a gaseous pressure and gaseous components. CONSTITUTION:The region of an electric discharge tube 4 of a vacuum chamber 3 is made larger in the magnetic field intensity than the magnetic field intensity at which electron cyclotron resonance arises. Gases are respectively supplied through an introducing port 6 into such region and through an introducing port 7 into the region where the magnetic field intensity is smaller than the above-mentioned resonance magnetic field intensity. The film forming gas contg. Si atoms is supplied through the port 7. The non-film formable gas to be supplied through the port 6 is any among Ne, Ar, Kr and Xe and is introduced at 0.05-20 times the amt. of the Si-contg. gas. The gaseous pressure during the discharge is maintained under 5X10 -3X10 Torr. The intended amorphous silicon film is thus formed on the substrate 8.

29. 发明专利

JPS61125133A Low temperature plasma electromagnetic field control structure 失效
标题翻译：低温等离子体电磁场控制结构
公开(公告)号：JPS61125133A
公开(公告)日：1986-06-12
申请号：JP24616484
申请日：1984-11-22
申请人： Hitachi Ltd , Hitachi Service Eng Co Ltd
发明人： SUZUKI KAZUO , CHIBA ATSUSHI , SONOBE TADASHI
IPC分类号： B28D5/00 , H01L21/302 , H01L21/3065
CPC分类号： H01L21/302
摘要： PURPOSE:To create a thin film without defect of excellent quality by a method wherein a plasma particle flow, which drifts in a selected direction along an operating substrate, is produced and then plasma incident angle on the operating substrate is made to possess constant directivity. CONSTITUTION:Low temperature plasma 12 of stock gas injected from a supply tube 9, 10 is created by the means that electron cyclotron resonance is generated caused by a magnetic field coil 7 disposed to outside periphery of a plasma creating chamber 1 and microwave 8 supplied from a wave guide 6. The low temperature plasma introduced to a reaction chamber 2 is subjected to Lorentz force F produced by magnetic field Bz in an axis direction impressed by a control magnetic field coil 26 on the surface of an operation substrate 4, i.e., (z) direction, and electric field Er in a direction crossing at right angle for the axis impressed by an electric field electrode 25, i.e., (r) direction and the said plasma is drifted while holding directivity in crossing at right angle to the magnetic field Bz and electric field Er.
摘要翻译：目的：通过其中产生沿着操作基板沿选定方向漂移的等离子体粒子流动，并且使得操作基板上的等离子体入射角度具有恒定的方向性的方法来制造没有优质品质的薄膜。构成：从供给管9,10注入的原料气体的低温等离子体12通过由设置在等离子体产生室1的外周的磁场线圈7和由微波8供给的微波8产生的电子回旋共振产生引导到反应室2的低温等离子体在由操作基板4的表面上的控制磁场线圈26施加的轴向上受到磁场Bz产生的洛伦兹力F，即 z方向，并且对于由电场电极25（即，（r）方向）照射的轴，在垂直方向上交叉的方向上的电场Er，并且所述等离子体在保持与磁场成直角交叉的方向性的同时漂移 Bz和电场呃。

30. 发明专利

JPS6053540B2 失效
公开(公告)号：JPS6053540B2
公开(公告)日：1985-11-26
申请号：JP9152778
申请日：1978-07-28
申请人： HITACHI LTD
发明人： KASHIWAMURA YOSHIKYO , SONOBE TADASHI
IPC分类号： H01R39/04 , H02K13/00 , H02K13/04

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