专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明专利

JPS5457861A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5457861A
公开(公告)日：1979-05-10
申请号：JP12347877
申请日：1977-10-17
申请人： HITACHI LTD
发明人： MIYAO MASANOBU , TOKUYAMA KON
IPC分类号： H01L21/265 , H01L21/324
摘要： PURPOSE:To form a high-density shallow junction layer excellent in electric characteristic thourgh annealing at a low temperature between 400 and 800 deg.C, by double-implanting two kinds of impurity elements in the surface of a silicon substrate. CONSTITUTION:To attain the reduction of channeling components and the improvement of electrical characteristics after annealing, an element, whose atomic number is greater than sixteen, among impurity elements of a desired conduction type is implanted in silicon substrate 1 as much as or more than the substrate surface becomes non-crystal, thereby forming non-crystal layer 2. For the purpose of controlling a resistance value after the annealing, more III-group or V-group impurity element of a desired conduction type than the amount of the 1st implantation is implanted by enough energy to make it stay inside non-crystal layer 2, thereby forming impurity layer 3. In order to activate the implantation layer electrically, this is heat-treated at a temperature between 400 and 800 deg.C.

22. 发明专利

JPS53104156A MANUFACTURE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS53104156A
公开(公告)日：1978-09-11
申请号：JP1819277
申请日：1977-02-23
申请人： HITACHI LTD
发明人： MIYAO MASANOBU , SUEHIRO NAOJI , TOKUYAMA KON
IPC分类号： H01L21/76 , H01L21/265 , H01L21/316 , H01L21/322 , H01L21/329 , H01L21/331 , H01L29/70 , H01L29/73
摘要： PURPOSE:To form the multiple layer type Si layer in which the polarity and specific resistance are rapidly changed, by single crystallizing the amorphous Si sunk on the surface of Si substrate.

23. 发明专利

JPS5399870A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5399870A
公开(公告)日：1978-08-31
申请号：JP1426877
申请日：1977-02-14
申请人： HITACHI LTD
发明人： MIYAO MASANOBU , SUEHIRO NAOJI , TOKUYAMA KON
IPC分类号： H01L21/761 , H01L21/265 , H01L21/322 , H01L21/76
摘要： PURPOSE:To form the electrically active layer electrically insulated from the others inside the substrate, by forming the polymer of a noncrystal lump of several % to 20% in crystal damage rate inside the Si substrate through ion implantation, and by annealing it into a high resistance insulating layer.

你已经成功收藏专利！

检索式保存成功!

IPRDB