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21. 发明专利

JP2004125584A Optical modulation excitation reflection spectroscopic device 审中-公开
公开(公告)号：JP2004125584A
公开(公告)日：2004-04-22
申请号：JP2002289553
申请日：2002-10-02
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TSUCHIYA TADAITSU
IPC分类号： G01N21/27 , G01N21/00
摘要： PROBLEM TO BE SOLVED: To provide a technology for using an inexpensive excitation light source having a wavelength included in a measuring wavelength range, and removing a noise effectively, in an optical modulation excitation reflection spectroscopy.
SOLUTION: This optical modulation excitation reflection spectroscopic device is equipped with a probe light irradiation part 30 for irradiating spectrally diffracted probe light toward a sample, and an excitation light irradiation part 32 for irradiating excitation light for modulating the probe light toward a region of the sample S irradiated with the probe light. In the device, the probe light and the excitation light are linearly polarized, and in order to mutually shift the linear polarization direction between the probe light and the excitation light by an angle larger than 60 degrees and smaller than 120 degrees, a first linear polarization filter 40 and a third linear polarization filter 44 are provided as linear polarization direction shifting means.
COPYRIGHT: (C)2004,JPO

22. 发明专利

JP2003339173A Actuator element 审中-公开
标题翻译：执行元件
公开(公告)号：JP2003339173A
公开(公告)日：2003-11-28
申请号：JP2002147539
申请日：2002-05-22
申请人： Hitachi Cable Ltd , 日立電線株式会社
发明人： TSUCHIYA TADAITSU
IPC分类号： H02N2/00
摘要： PROBLEM TO BE SOLVED: To provide an actuator element having a large displacement and displacement stress and proper stress crack resistance. SOLUTION: The actuator element 10 comprises an ion exchange resin molding 11; and metal electrodes 13a, 13b provided in an insulating state from each other on the surface of the molding 11. Thus, a potential difference is applied between the electrodes 13a and 13b, to generate a bend or a deformation. The molding 11 is impregnated with a polar organic solvent 12. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供具有大的位移和位移应力和适当的抗应力开裂性的致动器元件。解决方案：致动器元件10包括离子交换树脂模制件11; 以及在成型体11的表面上彼此隔开的金属电极13a，13b。因此，在电极13a和13b之间施加电位差，产生弯曲或变形。模塑料11用极性有机溶剂12浸渍。版权所有（C）2004，JPO

23. 发明专利

JP2002050758A COMPOUND SEMICONDUCTOR EPITAXIAL WAFER AND TRANSISTOR USING THE SAME 失效
公开(公告)号：JP2002050758A
公开(公告)日：2002-02-15
申请号：JP2000240379
申请日：2000-08-03
申请人： HITACHI CABLE
发明人： TSUCHIYA TADAITSU , KIHARA MICHIO
IPC分类号： C30B29/40 , H01L21/205 , H01L21/338 , H01L29/20 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide a compound semiconductor epitaxial wafer having hole as carrier and a transistor which uses the same. SOLUTION: By inserting a buffer layer 7 to the lower part of a channel layer 5 with a linear expansion coefficient equal to or greater than that of a carrier supply layer 6 and sufficient thickness, tensile distortion which occurs on the carrier supply layer 6 is relaxed, and the induction of electrons to a hetero-interface is suppressed, so that a two-dimensional hole gas can be generated. As a result, a P-type FET with holes as carrier can be provided.

24. 发明专利

JP2001111036A COMPOUND SEMICONDUCTOR THIN FILM AND FIELD EFFECT TRANSISTOR USING IT 失效
公开(公告)号：JP2001111036A
公开(公告)日：2001-04-20
申请号：JP28749199
申请日：1999-10-08
申请人： HITACHI CABLE
发明人： TANAKA TAKESHI , WAJIMA MINEO , TSUCHIYA TADAITSU , TAKANO KAZUTO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PROBLEM TO BE SOLVED: To obtain a compound semiconductor thin film having excellent carrier transportation characteristics and a field effect transistor having excellent high frequency operation characteristics by enhancing the planarity of an InAlAs buffer layer formed on a GaAs substrate while utilizing the characteristics of InGaAs having high electron mobility. SOLUTION: At the time of forming a semiconductor layer, e.g. an InGaAs channel layer, on a GaAs substrate 1 through InAlAs buffer layers 71, 73, As on the surface of the InAlAs buffer layer 71 is substituted by another group V element.

25. 发明专利

JP2001102564A NITRIDE SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001102564A
公开(公告)日：2001-04-13
申请号：JP27542999
申请日：1999-09-29
申请人： HITACHI CABLE
发明人： TSUCHIYA TADAITSU
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PROBLEM TO BE SOLVED: To reduce Coulomb scattering due to the piezo-charge of a hetero interface in a high electron mobility transistor and to realize original high electron mobility of a channel layer. SOLUTION: In selectively doped structure having heterojunction of an electron supply layer 6, constituted of nitride aluminium/gallium where n-type impurity is doped and a channel layer 4 constituted of non-doped gallium nitride or indium/gallium nitride, a spacer layer 5 constituted of a nitride compound semiconductor, where elastic distortion is not given and thus elastic distortion is small and piezo-charge does not appear, is inserted between the electron supply layer 6 and the channel layer 4.

26. 发明专利

JP2001093838A METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR MULTILAYER FILM 失效
公开(公告)号：JP2001093838A
公开(公告)日：2001-04-06
申请号：JP26736499
申请日：1999-09-21
申请人： HITACHI CABLE
发明人： TANAKA TAKESHI , TSUCHIYA TADAITSU , TAKANO KAZUTO
IPC分类号： H01L21/306 , H01L21/205 , H01L21/338 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To provide satisfactory yield and productivity manufacturing method of a compound semiconductor multilayer thin film for preventing mingling of As in a P-based compound thin film that is grown as an etching stopper layer. SOLUTION: A P-based compound thin film as an etching stopper layer 8 is formed on the upper hetero-interface side of an As-based compound semiconductor thin film in multilayers on a semi-insulating GaAs substrate 1, when a compound semiconductor multilayer thin film is formed in a manufacturing method. In this case, one or more steps for supplying only P-material are provided in the whole steps of growing the etching stopper layer 8.

27. 发明专利

JP2001002494A METHOD FOR EPITAXIAL GROWTH 失效
公开(公告)号：JP2001002494A
公开(公告)日：2001-01-09
申请号：JP17241099
申请日：1999-06-18
申请人： HITACHI CABLE
发明人： TAKANO KAZUTO , TSUCHIYA TADAITSU , SAKAGUCHI HARUNORI
IPC分类号： H01L21/205 , C30B25/10
摘要： PROBLEM TO BE SOLVED: To provide a method for epitaxially growing, by which lowering of the temp. at the peripheral part of a substrate is suppressed when the substrate is heated, thereby the temp. distribution in the substrate can be kept uniform, and the thermal decomposition of the source gas and the growing of a thin film are uniformly executed over the whole surface of the crystal substrate when the crystal is grown, while preventing the constitution from becoming complicated and expensive. SOLUTION: In an epitaxial growing method, in which a gaseous starting material 15 is fed into a growing chamber 4 and a thin film crystal is grown on a substrate of a semiconductor or an insulative material, the substrate 1 is heated while allowing the amount of the heat given to the substrate 1 to have an inclination such that the amount of heat to be given to the peripheral part of the substrate is lager than the amount of heat to be given to the center part of substrate. The substrate 1 is heated by the radiant heat of a radiation-type heater 5 through a soaking control plate 6 having a spherical recessed part and an annular projecting part at the periphery of the recessed part. The substrate 1 is heated in such a manner that the amount of heat used for heating the center part of the substrate is given through the spherical recessed part and the amount of the heat used for heating the periphery of the substrate is given through the annular projecting part.

28. 发明专利

JP2000164852A GALLIUM-INDIUM-NITRIDE-ARSENIDE BASED EPITAXIAL WAFER AND HIGH ELECTRON MOBILITY TRANSISTOR USING THE SAME 失效
公开(公告)号：JP2000164852A
公开(公告)日：2000-06-16
申请号：JP33412198
申请日：1998-11-25
申请人： HITACHI CABLE
发明人： TSUCHIYA TADAITSU
IPC分类号： H01L29/812 , H01L21/338 , H01L29/778
摘要： PROBLEM TO BE SOLVED: To realize GaInNAs-based HEMT(high electron mobility transistor) on a GaAs wafer to obtain a high performance HEMT capable of providing low-noise amplification. SOLUTION: An epitaxial wafer comprises a gallium arsenide wafer 1 with its surface laminated in order of precedence by a buffer layer 2, a channel layer 3 having electron affinity higher than that of the buffer layer 2, and a carrier-providing layer 4 having electron affinity lower than that of the channel layer 3. The carrier-providing layer 4 is doped by a donor impurity and the channel layer 3 is constituted of a compound semiconductor comprising one of aluminum, gallium, or indium, or all of them, and either arsenic or phosphorus or both of them, and nitrogen.

29. 发明专利

JPH09260643A HIGH-ELECTRON MOBILITY TRANSISTOR 失效
公开(公告)号：JPH09260643A
公开(公告)日：1997-10-03
申请号：JP7064496
申请日：1996-03-26
申请人： HITACHI CABLE
发明人： TSUCHIYA TADAITSU , WADA JIRO , TAKANO KAZUTO
IPC分类号： H01L29/872 , H01L21/338 , H01L29/47 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To make a control of the interface between the metal layer of a gate electrode, which is provided on a carrier feeding layer, and a GaInP layer, which is the carrier feeding layer possible and, at the same time, to prevent the device characteristics of an HEMT from being reduced, so as to prevent an adverse effect from being exerted on the device characteristics by the Schottky junction characteristics in the interface. SOLUTION: A buffer layer 102, a channel layer (undoped InGaAs layer) 103, and a spacer layer 104 are laminated in order on a semi-insulative GaAs substrate 101, and a carrier feeding layer (n-type GaInP layer) 105 is provided on this layer 104. Moreover, an n-type Al0.22 Ga0.78 As layer 106 for interface control use and a contact layer (n-type GaAs layer) 107 are laminated, in order to form a wafer. The deterioration of a Schottky junction characteristics in the interface between the n-type GaInP layer and the metal layer of the gate electrode, which is provided on the carrier feeding layer 105 which is the n-type GaInP layer, is prevented from being generated by the layer 106, and the enhancement of the characteristics of a device, which is formed by using a GaInP material, becomes possible.

30. 发明专利

JPH09246530A GALLIUM-INDIUM-PHOSPHOROUS HIGH ELECTRON MOBILITY TRANSISTOR 失效
公开(公告)号：JPH09246530A
公开(公告)日：1997-09-19
申请号：JP5207096
申请日：1996-03-08
申请人： HITACHI CABLE
发明人： TSUCHIYA TADAITSU , SAKAGUCHI HARUNORI
IPC分类号： H01L21/205 , H01L21/338 , H01L29/778 , H01L29/812
摘要： PROBLEM TO BE SOLVED: To improve transistor property by raising the indium.arsenic composition rate of indium.gallium.arsenic which constitutes a channel layer. SOLUTION: A carrier supply layer 5 and a spacer layer 4 are made of gallium.indium.phosphorus whose lattice constant is smaller than the gallium.arsenic. Then, hereby tensile strength is brought into existence, and the thickness is set so that the distortion energy by this tensile strength may be larger than the distortion energy based on the compressive stress in the indium.gallium.arsenic of the channel layer 3. Hereby, the increase of the film thickness of the channel layer 3 becomes possible, and the transistor property can be improved by increasing the indium.arsenic composition rate of the indium.gallium.arsenic constituting the channel layer 3.

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