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21. 发明专利

JP5193582B2 A method of manufacturing a semiconductor device 有权
公开(公告)号：JP5193582B2
公开(公告)日：2013-05-08
申请号：JP2007320444
申请日：2007-12-12
申请人：株式会社東芝 , 東芝メモリシステムズ株式会社
发明人：康輔柳平 , 親亮児玉
IPC分类号： H01L21/3205 , H01L21/3065 , H01L21/321 , H01L21/336 , H01L21/768 , H01L21/8247 , H01L23/522 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L23/528 , H01L21/31144 , H01L21/76802 , H01L21/76816 , H01L21/76877 , H01L23/48 , H01L23/522 , H01L27/0207 , H01L27/11519 , H01L27/11526 , H01L27/11529 , H01L2924/0002 , H01L2924/00
摘要： A method for manufacturing a semiconductor device of one embodiment of the present invention includes: forming an insulation layer to be processed over a substrate; forming a first sacrificial layer in a first area over the substrate, the first sacrificial layer being patterned to form in the first area a functioning wiring connected to an element; forming a second sacrificial layer in a second area over the substrate, the second sacrificial layer being patterned to form in the second area a dummy wiring; forming a third sacrificial layer at a side wall of the first sacrificial layer and forming a fourth sacrificial layer at a side wall of the second sacrificial layer, the third sacrificial layer and the fourth sacrificial layer being separated; forming a concavity by etching the insulation layer to be processed using the third sacrificial layer and the fourth sacrificial layer as a mask; and filling a conductive material in the concavity.

22. 发明专利

JP4956068B2 Semiconductor memory device and its control method 有权
公开(公告)号：JP4956068B2
公开(公告)日：2012-06-20
申请号：JP2006182435
申请日：2006-06-30
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：武中野
IPC分类号： G06K19/07 , G11C16/02
CPC分类号： G06F12/0246 , G11C29/76
摘要： A semiconductor memory device has a semiconductor memory which includes the first central management block storing an address translation table, a free table for registering only an effective block address, the first bad block table, and a reserved table, and a controller configured to control a substitution block address acquired from the reserved table to substitute a bad block address when the bad block address is generated in the address translation table.

23. 发明专利

JP4896898B2 Method of manufacturing a pattern to create a method and semiconductor device 有权
公开(公告)号：JP4896898B2
公开(公告)日：2012-03-14
申请号：JP2008009231
申请日：2008-01-18
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：嶌史晴中 , 玉親亮児 , 谷敏也小 , 下浩充間
IPC分类号： G03F1/68 , G03F1/36 , G03F1/70 , H01L21/027 , H01L21/82
CPC分类号： G06F17/5068 , G03F1/36

24. 发明专利

JP4719290B2 Information-processing system 有权
公开(公告)号：JP4719290B2
公开(公告)日：2011-07-06
申请号：JP2009142432
申请日：2009-06-15
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：博助川 , 健二坂上 , 仁角田
IPC分类号： G06F9/445 , G06F11/10 , G06F12/00 , G06F12/02 , G11C16/02 , G11C16/04

25. 发明专利

JP4560100B2 Semiconductor device 有权
公开(公告)号：JP4560100B2
公开(公告)日：2010-10-13
申请号：JP2008075610
申请日：2008-03-24
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：稔郁南 , 島弘光原
IPC分类号： H01L27/08 , H01L21/76 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L21/823481 , H01L27/11521
摘要： A semiconductor device includes a plurality of metal-insulator-semiconductor (MIS) transistors formed on a surface portion of a semiconductor substrate; and an isolation region isolating each of element regions of the MIS transistors, the isolation region including a first isolation region formed with a coating type insulating film embedded in a first trench, the first trench surrounding each of the element regions of the MIS transistors, and a second isolation region formed with a coating type insulating film embedded in a second trench, the second trench surrounding at least one of the first isolation regions with a predetermined distance from each of the first isolation regions, wherein the semiconductor substrate exists between the first isolation region and the second isolation region.

26. 发明专利

JP4496238B2 Non-volatile memory device 有权
公开(公告)号：JP4496238B2
公开(公告)日：2010-07-07
申请号：JP2007147817
申请日：2007-06-04
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：拓也二山 , 成夫大島 , 直哉常盤 , 俊昭枝広 , 和重神田 , 浩司細野
IPC分类号： G11C13/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C13/0097 , G11C2013/0092 , G11C2213/32 , G11C2213/72

27. 发明专利

JP4427560B2 Data writing method of the nonvolatile memory device 有权
公开(公告)号：JP4427560B2
公开(公告)日：2010-03-10
申请号：JP2007133586
申请日：2007-05-21
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：拓也二山 , 成夫大島 , 直哉常盤 , 俊昭枝広 , 和重神田 , 浩司細野
IPC分类号： G11C13/00
CPC分类号： G11C11/36

28. 发明专利

JP2010009132A Semiconductor storage device 审中-公开
标题翻译：半导体存储设备
公开(公告)号：JP2010009132A
公开(公告)日：2010-01-14
申请号：JP2008164807
申请日：2008-06-24
申请人： Toshiba Corp , Toshiba Memory Systems Co Ltd , 東芝メモリシステムズ株式会社 , 株式会社東芝
发明人： WATANABE TOSHIFUMI , SAITO SAKATOSHI
IPC分类号： G06F21/02 , G11C16/02
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device, capable of setting an optional protection area while suppressing increase in chip size. SOLUTION: The semiconductor storage device includes a nonvolatile memory having a plurality of blocks each of which is a minimum unit in which data can be independently erased; a volatile memory which serves as a buffer of the nonvolatile memory; a protection SRAM capable of holding protection information for limiting executable operation to each of the blocks; a register capable of reading the protection information corresponding to a block address input from the outside from the protection SRAM and setting it; and a control part which determines, based on the protection information set to the register, whether an operation requested to the block is limited or not. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体存储装置，能够设置可选的保护区域，同时抑制芯片尺寸的增加。解决方案：半导体存储装置包括具有多个块的非易失性存储器，每个块是可以独立擦除数据的最小单位; 用作非易失性存储器的缓冲器的易失性存储器; 保护SRAM，其能够保持用于限制对每个块的可执行操作的保护信息; 一个能够从保护SRAM读取对应于从外部输入的块地址的保护信息并将其设置的寄存器; 以及控制部，其基于对所述寄存器设置的保护信息，确定对所述块请求的操作是否被限制。版权所有（C）2010，JPO＆INPIT

29. 发明专利

JP4373972B2 Semiconductor memory device 有权
公开(公告)号：JP4373972B2
公开(公告)日：2009-11-25
申请号：JP2005328593
申请日：2005-11-14
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：澤隆大 , 知輝東
IPC分类号： G11C11/407 , G11C11/404 , G11C11/4091
CPC分类号： G11C8/08 , G11C7/065 , G11C7/08 , G11C8/10 , G11C11/4085 , G11C11/4091 , G11C2207/065 , G11C2211/4016

30. 发明专利

JP4358056B2 Semiconductor memory 有权
公开(公告)号：JP4358056B2
公开(公告)日：2009-11-04
申请号：JP2004219783
申请日：2004-07-28
申请人：東芝メモリシステムズ株式会社 , 株式会社東芝
发明人：澤隆大 , 知輝東
IPC分类号： G11C29/12
CPC分类号： G11C11/404 , G11C11/4094 , G11C29/50 , G11C2211/4016

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