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12. 发明专利

JP2009295887A Superconductive element, and manufacturing method thereof 有权
标题翻译：超导元件及其制造方法
公开(公告)号：JP2009295887A
公开(公告)日：2009-12-17
申请号：JP2008149835
申请日：2008-06-06
申请人： Japan Science & Technology Agency , 独立行政法人科学技術振興機構
发明人： HARUYAMA JUNSHI
IPC分类号： H01L39/12 , B82B1/00 , B82B3/00 , C01B31/02 , H01L39/24
摘要： PROBLEM TO BE SOLVED: To provide a superconductive element capable of making multilayer carbon nanotubes into a superconductive state at high temperature and with good reproducibility, and to provide a manufacturing method thereof.
SOLUTION: The multilayer carbon nanotube is formed in a pore 21 in a porous membrane 2, the multilayer carbon nanotube is the superconductive element whose diameter is 5-30 nm, and whose number of layers is 2-20, and the multilayer carbon nanotube is a boron substituted multilayer carbon nanotube 3 in which a part of carbon atoms constituting the multilayer carbon nanotube is substituted by boron atoms.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供能够使多层碳纳米管在高温下具有超导状态并具有良好再现性的超导元件，并提供其制造方法。解决方案：多孔碳纳米管在多孔膜2中的孔21中形成，多层碳纳米管是直径为5-30nm，层数为2-20的超导元件，多层膜为多层膜碳纳米管是构成多层碳纳米管的碳原子的一部分被硼原子取代的硼取代多层碳纳米管3。版权所有（C）2010，JPO＆INPIT

13. 发明专利

JP2006232568A PHOSPHORUS COMPOUND HAVING Co2Si TYPE CRYSTAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：具有Co2Si型晶体结构的磷化合物及其制造方法
公开(公告)号：JP2006232568A
公开(公告)日：2006-09-07
申请号：JP2005045435
申请日：2005-02-22
申请人： National Institute Of Advanced Industrial & Technology , 独立行政法人産業技術総合研究所
发明人： KITO SEI
IPC分类号： C01B25/08 , C01G1/00 , H01B1/02 , H01B12/06 , H01L39/12 , H01L39/24
CPC分类号： Y02E40/642
摘要： PROBLEM TO BE SOLVED: To provide a material comprising a phosphorus compound useful for a non-superconductor portion in superconductor-non-superconductor junction found, e.g. in a superconductive transistor when a superconductive element is manufactured.
SOLUTION: The phosphorus compound has a Co
2 Si type crystal structure and a chemical composition represented by the formula: MIrP (where M is one or more elements selected from Ti, Zr, Nb and Mo). The ratio among the components M, Ir and P is basically 1:1:1, but when the composition is varried by a lattice defect or the like, its composition variation range is allowed.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包含用于超导体非超导体部分的非超导体部分的磷化合物的材料，例如，在制造超导元件时是超导晶体管。解决方案：磷化合物具有Co 2 Si型晶体结构和由下式表示的化学组成：MIrP（其中M是选自Ti，Zr，Nb和Mo中的一种或多种元素）。组分M，Ir和P之间的比率基本上是1:1:1，但是当组合物由于晶格缺陷等而变化时，其组成变化范围是允许的。版权所有（C）2006，JPO＆NCIPI

14. 发明专利

JP2005524935A High field superconductors 审中-公开
公开(公告)号：JP2005524935A
公开(公告)日：2005-08-18
申请号：JP2004502371
申请日：2003-05-02
申请人：ユニバーシティー、オブ、ダーラムUniversity Of Durham
发明人：ダミアン、ハンプシャー , ホン−ジュン、ヌイ
IPC分类号： H01L39/12 , H01B13/00 , H01L39/24
CPC分类号： H01L39/2409 , H01L39/24 , H01L39/2406 , H01L39/2412
摘要：【解決手段】結晶超伝導材料の上部臨界磁場を上昇させる方法が提供されるが、この方法は、結晶超伝導材料を実質的なアモルファス状態に転換する工程と、この材料を再コンパクト化および結晶化する工程とを有する。この方法はまた、材料の臨界電流密度を上昇させる効果も有し、脆性超伝導体および延性超伝導体の双方に有効である。

15. 发明专利

JP2005191539A Superconducting current limiting device 审中-公开
标题翻译：超导电流限制器件
公开(公告)号：JP2005191539A
公开(公告)日：2005-07-14
申请号：JP2004300201
申请日：2004-10-14
申请人： Nexans , ネクサン
发明人： BOCK JOACHIM , ELSCHNER STEFFEN , BREUER FRANK
IPC分类号： H01L39/12 , H01F6/06 , H01L39/00 , H01L39/16 , H01L39/20 , H02H7/00 , H02H9/02
CPC分类号： H01L39/20 , H01F2006/001
摘要： PROBLEM TO BE SOLVED: To make a transition (quenching) from a superconducting state to a normal conducting state uniform and easy in a superconducting current limiting device which is a current limiting element such as a leakage current limiter formed by winding a coil on a superconductor. SOLUTION: In a superconducting current limiting device comprising a superconductor component 1, each superconductor component comprises a superconductor body 2 on which a coil 3 is wound, and the coil 3 is electrically connected to the superconductor body 2. Then a magnetic field is generated on the superconductor by a current flowing through the coil on transition of the superconductor from the superconducting state to the normal conducting state. The magnetic field makes a transition (quenching) from the superconducting state to the normal conducting state smooth, and as the device is self triggering (induction), fault state detection and the generation of the magnetic field for quenching are not required. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：在超导限流装置中，使从超导状态到正常导通状态的过渡（淬火）均匀且容易，该超导限流装置是限流元件，例如通过缠绕线圈形成的漏电流限制器在超导体上。解决方案：在包括超导体部件1的超导限流装置中，每个超导体部件包括缠绕有线圈3的超导体体2，线圈3与超导体本体2电连接。然后，磁场在超导体从超导状态转变为正常导通状态时，通过流过线圈的电流在超导体上产生。磁场从超导状态转变（淬火）到正常导通状态平滑，并且随着器件自触发（感应），不需要故障状态检测和淬灭磁场的产生。版权所有（C）2005，JPO＆NCIPI

16. 发明专利

JP3575004B2 Alloy superconductor as well as methods for their preparation containing the intermetallic compound superconductor and the intermetallic compound made of magnesium and boron 有权
公开(公告)号：JP3575004B2
公开(公告)日：2004-10-06
申请号：JP2001001948
申请日：2001-01-09
申请人：独立行政法人科学技術振興機構 , 純秋光
发明人：鑑応中川 , 隆弘村中 , 純永松 , 純秋光 , 勇磁銭谷
IPC分类号： C04B35/58 , C01B35/00 , C01B35/04 , C04B35/645 , C04B35/653 , C22C1/00 , C22C1/04 , C22C23/00 , C22C33/02 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
CPC分类号： C01B35/04 , C04B35/58057 , C04B35/64 , C04B35/645 , C04B35/6455 , C04B35/653 , C04B2235/3206 , C04B2235/401 , C04B2235/421 , C04B2235/6581 , C04B2235/666 , C04B2235/761 , C04B2235/767 , C04B2235/96 , C22C33/02 , H01L39/125 , H01L39/2487 , Y10S420/901 , Y10S505/785 , Y10S505/805
摘要： There are provided an intermetallic compound superconductor that is high in superconducting transition temperature, and an alloy superconductor that is high in superconducting transition temperature and excels in malleability and ductility, as well as a method of making such a superconductor with good reproducibility and at a low cost of manufacture. This entirely new intermetallic compound superconductor is made of magnesium (Mg) and boron (B) and has a chemical composition expressed by formula: Mg1B2, has a hexagonal AlB2 type crystallographic structure and has a superconducting transition temperature (Tc) of 39 K. An alloy containing this intermetallic compound excels in malleability and ductility and constitutes the alloy superconductor having a superconducting transition temperature (Tc) of 39 K. In the method of manufacture, a Mg containing feedstock powder and a B containing feedstock powder are mixed together to form a mixture thereof which is, e.g., hot pressed to produce a semiconductor product.

17. 发明专利

JP2004203727A Oxide superconductor having high critical current density 审中-公开
标题翻译：具有高临界电流密度的氧化物超导体
公开(公告)号：JP2004203727A
公开(公告)日：2004-07-22
申请号：JP2003171811
申请日：2003-06-17
申请人： Internatl Superconductivity Technology Center , Iwate Prefecture , 岩手県 , 財団法人国際超電導産業技術研究センター
发明人： MIRIYARA MURARIDA , SAKAI NAOMICHI , MURAKAMI MASAHITO , KOSHIZUKA NAOKI , SAITO TAKASHI , ONO HAJIME
IPC分类号： C01G3/00 , C01G1/00 , H01B13/00 , H01L39/12
摘要： PROBLEM TO BE SOLVED: To provide an RE-Ba-Cu-O based oxide superconductor capable of realizing a high critical current density at a relatively high temperature even in a high magnetic field, and to provide a method of manufacturing the oxide superconductor.
SOLUTION: In the RE-Ba-Cu-O based oxide superconductor (RE is one or more kinds selected from rare earth elements), non-superconductive fine particles having a composition of RE
a -Ba
b -Cu
c -Z
d -O or RE
a -Ba
b -Cu
c -Z
d -Pt
e -O (Z is a group IVA element and one or more kinds selected from Ti, Zr and Hf, 0≤a≤1.0, 0.5≤b≤1.0, 0≤c≤1.0, 0 1+x Ba
2-x Cu
3 O
y (-0.1≤x≤0.1, 6.5≤y≤7.1).
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：解决的问题：提供即使在高磁场下也能够在较高温度下实现高临界电流密度的RE-Ba-Cu-O系氧化物超导体，并且提供一种制造氧化物的方法超导体。解决方案：在RE-Ba-Cu-O基氧化物超导体（RE为选自稀土元素中的一种或多种）中，具有RE a组成的非超导细颗粒 - b - （Z是ⅣA族元素，选自Ti，Zr中的一种或多种）和Hf，0≤a≤1.0,0.5≤b≤1.0,0≤c≤1.0,0≤d≤0.5,0≤e≤0.5）和≤500nm的粒径分散在母相中，该母相由 RE 1 + x Ba 2-x 3 （ - 0.1≤x≤0.1，6.5≤ y≤7.1）。版权所有（C）2004，JPO＆NCIPI

18. 发明专利

JP2004501493A High critical current superconducting tape for structure 有权
公开(公告)号：JP2004501493A
公开(公告)日：2004-01-15
申请号：JP2002503883
申请日：2001-06-20
申请人：ザリージェンツオブザユニバーシティオブカリフォルニア
发明人：ジア、チュアンシ , フォルティン、ステファン　アール
IPC分类号： C23C14/08 , H01B12/06 , H01B13/00 , H01L39/02 , H01L39/12 , H01L39/14
CPC分类号： H01L39/143 , H01L39/128
摘要：超伝導薄膜構造物の臨界電流容量の改良、および、その超伝導薄膜構造物の使用方法。超伝導薄膜構造物は、たとえば、各々のＹＢＣＯ層が、ＣｅＯ
２などの絶縁性材料層、酸化ストロンチウムルテニウムなどの導電性材料層、またはＳｍＢＣＯなどの第二の超伝導体材料によって隔離された多層ＹＢＣＯ構造物からなる。

19. 发明专利

JP3394297B2 失效
公开(公告)号：JP3394297B2
公开(公告)日：2003-04-07
申请号：JP27145293
申请日：1993-10-29
IPC分类号： C01G1/00 , C01G29/00 , C30B29/22 , H01L39/12

20. 发明专利

JP2003095650A MgB2-BASED SUPERCONDUCTOR HAVING HIGH CRITICAL CURRENT DENSITY AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：JP2003095650A
公开(公告)日：2003-04-03
申请号：JP2002154900
申请日：2002-05-29
申请人： INT SUPERCONDUCTIVITY TECH
发明人： YU CHO , YU HIYO , GO HAJIME , MACHI TAKAHITO , SATSUMOTO ANSHIKI , KOSHIZUKA NAOKI , MURAKAMI MASAHITO
IPC分类号： C04B35/58 , C01B35/04 , C01G1/00 , H01B13/00 , H01L39/12
摘要： PROBLEM TO BE SOLVED: To produce MgB2 -based superconductor which is simple to manufacture and excellent in the mass productivity and showing an excellent superconductivity (a high critical current density and the like), retaining the property of the high critical temperature of MgB2 . SOLUTION: The MgB2 -based superconductor in which Ti and/or Ti compound scatteredly exist in the polycrystalline substance of MgB2 is manufactured by pressure-forming the mixture of Mg, B and Ti as shown in Fig. 1 and then firing the pressure-formed mixture in the atmospheric pressure and the like (preferably at the temperature not less than 600 deg.C). It is preferred to give the composition of MgB2 -based superconductor in the range of 0.7

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