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11. 发明专利

JP4497688B2 Solid-state imaging device 有权
公开(公告)号：JP4497688B2
公开(公告)日：2010-07-07
申请号：JP2000280586
申请日：2000-09-14
申请人：富士フイルム株式会社
发明人：和行益金 , 信雄鈴木
IPC分类号： H01L27/148 , H01L21/339 , H01L27/14 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/349 , H04N5/369 , H04N5/372 , H04N9/07
CPC分类号： H01L27/14887 , H01L27/14818 , H01L27/14843 , H01L27/14868

12. 发明专利

JP4488969B2 Solid-state imaging device 有权
公开(公告)号：JP4488969B2
公开(公告)日：2010-06-23
申请号：JP2005199733
申请日：2005-07-08
申请人：三洋電機株式会社
发明人：孝行海田
IPC分类号： H01L27/148 , H01L21/339 , H01L27/146 , H01L29/762 , H04N5/335 , H04N5/369 , H04N5/372
CPC分类号： H01L29/76816 , H01L27/14609 , H01L29/76833

13. 发明专利

JP2009200262A Semiconductor device and its manufacturing method, solid-state imaging device and its manufacturing method, and electronic information equipment 审中-公开
标题翻译：半导体器件及其制造方法，固态成像器件及其制造方法和电子信息设备
公开(公告)号：JP2009200262A
公开(公告)日：2009-09-03
申请号：JP2008040567
申请日：2008-02-21
申请人： Sharp Corp , シャープ株式会社
发明人： ADACHI HIROSHI
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762
摘要： PROBLEM TO BE SOLVED: To provide a solid-state imaging device capable of reducing a film thickness of an electrode insulating film insulating double-layer gate electrodes according to a withstand voltage while avoiding thermal oxidation of an electrode material at an electrode side end portion. SOLUTION: The solid-state imaging device includes a first gate electrode 103 formed on a semiconductor substrate 101, a second gate electrode 106 so formed on the semiconductor substrate 101 and the first electrode 103 as to straddle them and the electrode insulating film 134 which insulates the first electrode and the second electrode. In the device, the electrode insulating film 134 includes a structure including an over-electrode portion 113a which is acquired from a first insulating film 113 and positioned over the first gate electrode 103, and an electrode sidewall portion 114a which is acquired from a second insulating film 114, different layer from the first insulating film 113, and positioned on the side surface of the first gate electrode 103. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种固态成像装置，其能够根据耐电压降低电极绝缘膜绝缘双层栅电极的膜厚，同时避免电极侧的电极材料的热氧化端部。解决方案：固态成像器件包括形成在半导体衬底101上的第一栅电极103，形成在半导体衬底101上的第二栅电极106和跨越它们的第一电极103和电极绝缘膜 134，其使第一电极和第二电极绝缘。在该器件中，电极绝缘膜134包括从第一绝缘膜113获取并定位在第一栅电极103上的超电极部分113a和从第二绝缘膜134获取的电极侧壁部分114a的结构。膜114，与第一绝缘膜113不同的层，并且位于第一栅电极103的侧表面上。版权所有（C）2009，JPO和INPIT

14. 发明专利

JP4321568B2 Solid-state imaging device and imaging device 有权
公开(公告)号：JP4321568B2
公开(公告)日：2009-08-26
申请号：JP2006231505
申请日：2006-08-29
申请人：ソニー株式会社
发明人：秀夫神戸
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372
CPC分类号： H04N5/3728 , H01L27/14837 , H04N5/361 , H04N5/378

15. 发明专利

JP2009182834A Ccd device and driving method 有权
标题翻译： CCD设备和驱动方法
公开(公告)号：JP2009182834A
公开(公告)日：2009-08-13
申请号：JP2008021257
申请日：2008-01-31
申请人： Nec Electronics Corp , Necエレクトロニクス株式会社
发明人： TSUZUKI TAKAO
IPC分类号： H01L21/339 , H01L29/762 , H04N5/335 , H04N5/357 , H04N5/363 , H04N5/369 , H04N5/372
CPC分类号： H01L29/76816 , G11C19/282 , H04N5/363 , H04N5/37213
摘要： PROBLEM TO BE SOLVED: To suppress reset feedthrough noise to variations of potential of a diffusion layer, etc.
SOLUTION: In this CCD device, an electric charge transfer register of CCD structure is connected to an electric charge detection part 3 via an output gate 2, a reset gate 4 is provided between the electric charge detection part 3 and a reset drain 5, an output gate pulse with the opposite phase to a reset pulse applied to the reset gate 4 is applied to the output gate 2, a dummy electric charge detection part 7 is provided, and an amplitude adjustment circuit 8 which controls amplitude of an output gate pulse applied to the output gate 2 based on detection results of the potential of the diffusion layer of the dummy electric charge detection part 7 is provided.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：抑制复位馈通噪声对扩散层等的电位变化的影响。解决方案：在该CCD器件中，将CCD结构的电荷转移寄存器连接到电荷检测部分通过输出门2，在电荷检测部分3和复位漏极5之间设置复位门4，将与施加到复位门4的复位脉冲相反的输出门脉冲施加到输出门如图2所示，设置有虚拟电荷检测部7，以及振幅调整电路8，其根据虚拟电荷检测部的扩散层的电位的检测结果来控制施加到输出门2的输出门脉冲的振幅提供了图7。版权所有（C）2009，JPO＆INPIT

16. 发明专利

JP2009170803A Imaging device and method for manufacturing imaging element 审中-公开
标题翻译：成像装置和制造成像元件的方法
公开(公告)号：JP2009170803A
公开(公告)日：2009-07-30
申请号：JP2008009797
申请日：2008-01-18
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： MAKITA TAKESHI , NAGASE MASANORI , OKIKAWA MITSURU
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762
摘要： PROBLEM TO BE SOLVED: To provide an imaging element capable of stabilizing a sensitivity for detecting charges, and to provide its manufacturing method.
SOLUTION: The imaging element includes a semiconductor substrate 11; a gate insulating film 12 formed on the semiconductor substrate 11; a floating diffusion FD, formed on a surface of the semiconductor substrate 11 and exposed from a contact hole formed in the gate insulating film 12; and a wiring layer formed on the gate insulating film 12 and contacting with the floating diffusion FD. The wiring layer includes a plurality of electrode material films, having a different impurity concentration, and one among the electrode material films laminated above a bottom layer in a plurality of electrode material films contacts the floating diffusion FD.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供能够稳定检测电荷的灵敏度的成像元件，并提供其制造方法。解决方案：成像元件包括半导体衬底11; 形成在半导体基板11上的栅极绝缘膜12; 形成在半导体基板11的表面并从形成在栅极绝缘膜12上的接触孔露出的浮动扩散部FD; 以及形成在栅极绝缘膜12上并与浮动扩散部FD接触的布线层。布线层包括具有不同杂质浓度的多个电极材料膜，并且在多个电极材料膜中层叠在底层上方的电极材料膜中的一个与浮动扩散部FD接触。版权所有（C）2009，JPO＆INPIT

17. 发明专利

JP2009147714A Solid-state imaging device and method of driving the same 审中-公开
标题翻译：固态成像装置及其驱动方法
公开(公告)号：JP2009147714A
公开(公告)日：2009-07-02
申请号：JP2007323466
申请日：2007-12-14
申请人： Sony Corp , ソニー株式会社
发明人： NUMAGUCHI SHOGO
IPC分类号： H01L21/339 , H01L27/148 , H01L29/762 , H04N1/028 , H04N5/335 , H04N5/355 , H04N5/3728
摘要： PROBLEM TO BE SOLVED: To reduce generation of hot electron caused by collisional ionization phenomenon, and to achieve improvement of image quality.
SOLUTION: A CCD solid-state imaging device (an area sensor) has a light reception part 1, a vertical transmission register 3, a horizontal transmission register 4, a floating diffusion 17, and a reset gate 20. In the CCD solid-state imaging device, high level potential is applied to the reset gate during a light exposure period to reduce generation of hot electron caused by collisional ionization phenomenon, and low level potential is applied to the reset gate during a signal output period to assure a D range of the floating diffusion.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：减少由碰撞电离现象引起的热电子的产生，并实现图像质量的提高。解决方案：CCD固态成像装置（区域传感器）具有光接收部分1，垂直发射寄存器3，水平发射寄存器4，浮动扩散部17和复位门20.在CCD 固态成像装置，在曝光期间将高电平电位施加到复位栅极，以减少由碰撞电离现象引起的热电子的产生，并且在信号输出期间将低电平电位施加到复位栅极以确保 D范围内的浮动扩散。版权所有（C）2009，JPO＆INPIT

18. 发明专利

JP2009088262A Image sensor and method of manufacturing image sensor 审中-公开
标题翻译：图像传感器和图像传感器的制造方法
公开(公告)号：JP2009088262A
公开(公告)日：2009-04-23
申请号：JP2007256230
申请日：2007-09-28
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： SUZUKI NORIAKI
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762
摘要： PROBLEM TO BE SOLVED: To provide an image sensor capable of executing a self-align process and preventing a reduction in yield regardless of the structure of a charge transfer electrode, and to provide a method of manufacturing the image sensor.
SOLUTION: A method of manufacturing the image sensor 10 provided with a photoelectric conversion part PD formed on the semiconductor substrate 1 and charge transfer electrodes P1 and P2 for transferring the signal charge generated by the photoelectric conversion part PD onto the semiconductor substrate 1 includes: a step of forming an electrode layer P0 for forming the charge transfer electrodes P1 and P2 through an insulating film 2 on the semiconductor substrate 1; a step of forming an etch-stop layer 3 on the electrode layer P0; a step of forming a patterning layer M1 having the same pattern as the pattern of the charge transfer electrodes P1 and p2 at least in a part and formed of the same conductive material on the etch-stop layer 3; and a step of patterning the electrode layer P0 to form the charge transfer electrodes P1 and P2 by etching the electrode layer P0 and the patterning layers M1 and M2 and stopping at the etch-stop layer 3.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够执行自对准处理并且防止产率降低而不考虑电荷转移电极的结构的图像传感器，并且提供一种制造图像传感器的方法。解决方案：一种制造图像传感器10的方法，该图像传感器设置有形成在半导体衬底1上的光电转换部分PD和用于将由光电转换部分PD产生的信号电荷传送到半导体衬底1上的电荷转移电极P1和P2 包括：通过半导体衬底1上的绝缘膜2形成用于形成电荷转移电极P1和P2的电极层P0的步骤; 在电极层P0上形成蚀刻停止层3的步骤; 至少部分地形成具有与电荷转移电极P1和p2的图案相同的图案的图案形成层M1的步骤，并由蚀刻停止层3上的相同的导电材料形成; 以及通过蚀刻电极层P0和图案化层M1和M2并在蚀刻停止层3处停止来图案化电极层P0以形成电荷转移电极P1和P2的步骤。版权所有（C）2009 ，JPO＆INPIT

19. 发明专利

JP2009043864A Method for manufacturing charge-coupled device, and solid-state imaging apparatus 审中-公开
标题翻译：制造电荷耦合器件的方法和固态成像装置
公开(公告)号：JP2009043864A
公开(公告)日：2009-02-26
申请号：JP2007206167
申请日：2007-08-08
申请人： Fujifilm Corp , 富士フイルム株式会社
发明人： TAKAO HIROAKI
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762
摘要： PROBLEM TO BE SOLVED: To enhance a manufacturing accuracy of a barrier wall between gate electrodes of a monolayer gate electrode structure.
SOLUTION: A concavo-convex structure is formed on a silicon substrate 20 by patterning a first silicon oxide film 32 formed through an insulating film, a silicon nitride film 34 is formed on the surface of the concavo-convex structure, a plurality of barrier walls are formed by removing a first and a second silicon oxide film 32, 35 by polishing and etching so as to leave a part positioning at the side surface 12b of the concavo-convex structure out of the silicon nitride film 34 after forming the second silicon oxide film 35 on the silicon nitride film 34 so as to bury the concave part of the concavo-convex structure, and further a barrier wall is reformed by oxidizing the surface layer of the barrier wall by heat treatment. This decreases the corrosion of the barrier wall by the cleaning process to improve the manufacturing accuracy of the barrier wall. The barrier wall is in the state of silicon nitride at the time of cleaning process, and has a high resistance property (fluorinated acid resistance) for the fluorinated acid used for the cleaning.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提高单层栅电极结构的栅电极之间的阻挡壁的制造精度。解决方案：通过图案化通过绝缘膜形成的第一氧化硅膜32，在硅衬底20上形成凹凸结构，在凹凸结构的表面上形成氮化硅膜34，多个通过抛光和蚀刻去除第一和第二氧化硅膜32,35以形成位于凹凸结构的侧表面12b的部分从氮化硅膜34中排出的部分形成阻挡壁之后，形成在氮化硅膜34上形成第二氧化硅膜35，以埋入凹凸结构的凹部，并且通过热处理氧化阻挡壁的表面层来进一步形成阻挡壁。这通过清洁过程减小了阻隔壁的腐蚀，从而提高了阻隔壁的制造精度。阻挡壁在清洗过程中处于氮化硅的状态，并且对于用于清洁的氟化酸具有高电阻性（氟化耐酸性）。版权所有（C）2009，JPO＆INPIT

20. 发明专利

JP2009038325A Solid imaging apparatus 审中-公开
标题翻译：固体摄像装置
公开(公告)号：JP2009038325A
公开(公告)日：2009-02-19
申请号：JP2007203722
申请日：2007-08-06
申请人： Panasonic Corp , パナソニック株式会社
发明人： TACHIKAWA KEIJI
IPC分类号： H01L27/148 , H01L21/339 , H01L29/762 , H04N5/335 , H04N5/341 , H04N5/369 , H04N5/372
CPC分类号： H01L27/14812
摘要： PROBLEM TO BE SOLVED: To provide a solid imaging apparatus for improving transfer efficiency, enlarging the number of saturation electrons, and reducing variation of transfer efficiency and saturation variation. SOLUTION: An impurity region 6 and an impurity region 5 with a concentration lower than that of the impurity region 6 are formed in a gate electrode lower-layer region near a border with a signal electron/voltage conversion unit of a horizontal CCD egress portion. Thereby, potential distribution can be sloped gently in transfer, transfer efficiency can be improved, the number of saturation electrons can be enlarged, and the variation of transfer efficiency and saturation variation can be reduced. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于提高转印效率，扩大饱和电子数量并减少转印效率和饱和度变化的变化的固体成像装置。解决方案：在与水平CCD的信号电子/电压转换单元的边界附近的栅极电极下层区域中形成浓度低于杂质区域6的杂质区域6和杂质区域5 出口部分。由此，电位分布可以在转移中缓慢倾斜，可以提高转印效率，可以扩大饱和电子的数量，并且可以降低转印效率和饱和度变化的变化。版权所有（C）2009，JPO＆INPIT

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