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    • 13. 发明专利
    • SEMICONDUCTOR CONTAINING ELEMENT
    • JPS6326635A
    • 1988-02-04
    • JP19199786
    • 1986-08-19
    • SAGAMI CHEM RES
    • HONDA KENJIKUWANO ATSUSHIMIYAMA SO
    • C01C3/11G02F1/15G02F1/153G02F1/17G09F9/30H01L31/08H01L51/42
    • PURPOSE:To obtain a new solid thin film element usable to the element using the semiconductor having a photoresponsible property as a base electrode, or the like, by incorporating an electron doner, an electron acceptor and the semiconductor to a base material and by constituting at least one of the electron donor and the electron acceptor from a high molecular metal complex. CONSTITUTION:The titled element comprises the electron donor, the electron acceptor and the semiconductor in the base material. At least one of the electron donor and the electron acceptor is composed of the high molecular metal complex. The electron donor is exemplified by an insoluble mixed valence polynuclear metal complex representative to prussian blue, and a soluble high molecular metal complex which coordinates a transition metal ion having a low valence state such as iron (II) and cobalt (II), etc., with a high mol.wt. substance having a functional group capable of binding with a metal, such as polyvinyl pyridine, etc. While, the electron acceptor is exemplified by an insoluble mixed valence polynuclear metal complex representative to prussian blue and a soluble high molecular metal complex, etc., which coordinates a transition metal ion having a high valence state such as iron (III) and cobalt (III) etc., with a metal coordinatable high molecule.