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11. 发明专利

JP2004014631A Atmospheric pressure plasma processing system 有权
标题翻译：大气压力等离子体处理系统
公开(公告)号：JP2004014631A
公开(公告)日：2004-01-15
申请号：JP2002163225
申请日：2002-06-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SAKIO SUSUMU , ISHIBASHI AKIRA , ISHIKAWA MICHIO
IPC分类号： H05H1/24 , B01J19/08 , C23C16/44 , H01L21/205 , H01L21/3065 , H05H1/46
CPC分类号： C21D1/09
摘要： PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma processing system capable of processing an object efficiently and continuously by providing a plurality of plasma heads. SOLUTION: A plurality of atmospheric pressure plasma heads are provided and each atmospheric pressure plasma head is provided with at least a pair of electrodes arranged interdigitally. At least one of a pair of electrodes is coated or sealed with a dielectric, and an AC power is applied between the groups of pair electrodes. COPYRIGHT: (C)2004,JPO
摘要翻译：解决的问题：提供能够通过设置多个等离子体头来有效且连续地处理物体的大气压等离子体处理系统。解决方案：提供多个大气压等离子体头，并且每个大气压等离子体头设置有至少一对电极排列的电极。一对电极中的至少一个被电介质涂覆或密封，并且在电极组之间施加AC电力。版权所有（C）2004，JPO

12. 发明专利

JP2004014630A Atmospheric pressure plasma processing system 有权
标题翻译：大气压力等离子体处理系统
公开(公告)号：JP2004014630A
公开(公告)日：2004-01-15
申请号：JP2002163215
申请日：2002-06-04
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： TAKEI HIDEO , SAKIO SUSUMU , ISHIBASHI AKIRA , ISHIKAWA MICHIO
IPC分类号： C23C16/509 , H01L21/205 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide an atmospheric pressure plasma processing system capable of processing an object efficiently and continuously by forming a planar plasma.
SOLUTION: An atmospheric pressure plasma head is disposed in an atmospheric pressure chamber oppositely to a substrate being processed, a stabilized atmospheric pressure plasma is generated by supplying discharge gas and processing gas into the atmospheric pressure chamber, and the substrate is subjected to plasma processing. In such an atmospheric pressure plasma processing system, the exciting frequency of power being applied to the atmospheric pressure plasma head is set in the range of 100 kHz-2.45 GHz, and the atmospheric pressure plasma head is arranged to form a planar plasma.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供能够通过形成平面等离子体来有效且连续地处理物体的大气压等离子体处理系统。解决方案：将大气压等离子体头设置在与被处理的基板相反的大气压室中，通过向大气压室提供放电气体和处理气体来产生稳定的大气压等离子体，并且将基板等离子体处理。在这种大气压等离子体处理系统中，向大气压等离子体头施加的激励频率设定在100kHz〜2.45GHz的范围内，大气压等离子体头被配置成形成平面等离子体。版权所有（C）2004，JPO

13. 发明专利

JP2013105887A Crystal solar cell manufacturing method 审中-公开
标题翻译：晶体太阳能电池制造方法
公开(公告)号：JP2013105887A
公开(公告)日：2013-05-30
申请号：JP2011248734
申请日：2011-11-14
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , YAMAGUCHI NOBORU , SAKATA GENJI
IPC分类号： H01L31/04
CPC分类号： Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a crystal solar cell manufacturing method which enables a profile having a required p-type impurity concentration to be formed by implanting B ion selectively extracted from a source gas into one principal surface side of a crystal substrate.SOLUTION: A manufacturing method of a crystal solar cell 100 including a light-receiving surface receiving light and a crystal substrate 101 exhibiting a photoelectric conversion function between itself a rear face opposed to the light-receiving surface, comprises: arranging the crystal substrate in a vacuum chamber in a reduced-pressure atmosphere and introducing a source gas containing BHmolecules into the vacuum chamber; plasma exciting the source gas to selectively extract ionized B ion; and implanting the B ion into one principal surface 101b side of the crystal substrate 100 to form a P-type semiconductor layer 102.
摘要翻译：解决的问题：提供一种能够通过将从源气体选择性提取的B离子注入到晶体基板的一个主面侧而形成具有所需p型杂质浓度的分布的晶体太阳能电池制造方法。解决方案：包括受光面接收光的晶体太阳能电池100的制造方法和在其与受光面相对的后表面之间呈现光电转换功能的晶体基板101，包括：将晶体将基板在减压气氛中的真空室中，并将含有B 6 分子的源气体引入真空室 ; 等离子体激发源气体以选择性地提取离子化的B离子; 并将B离子注入到晶体基板100的一个主表面101b侧，以形成P型半导体层102.版权所有（C）2013，JPO＆INPIT

14. 发明专利

JP2013016552A Manufacturing method of crystal solar cell 有权
标题翻译：晶体太阳能电池的制造方法
公开(公告)号：JP2013016552A
公开(公告)日：2013-01-24
申请号：JP2011146553
申请日：2011-06-30
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , YAMAGUCHI NOBORU , SAKATA GENJI
IPC分类号： H01L31/04 , H01L21/265
CPC分类号： Y02E10/546 , Y02E10/547
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystal solar cell capable of improving photoelectric conversion efficiency by reducing resistance of a p-type semiconductor layer provided on one principal surface of a crystal substrate and resistance of an n-type semiconductor layer provided on the other principal surface of the crystal substrate.SOLUTION: A manufacturing method of a crystal solar cell 100 having a crystal substrate which exhibits a photoelectric conversion function between a light-receiving surface and a rear surface facing the light-receiving surface comprises, in order, at least: a first step of forming a p-type semiconductor layer 102 by implanting a p-type ion in a one principal surface 101b side of a plate-like base 101 composed of a p-type monocrystal or polycrystal silicon using the base 101 as the crystal substrate; a second step of performing first annealing processing for the base 101; a third step of forming an n-type semiconductor layer 103 by implanting an n-type ion in the other principal surface 101a side of the base 101; and a fourth step of performing second annealing processing for the base 101.
摘要翻译：解决的问题：提供一种通过降低设置在晶体基板的一个主表面上的p型半导体层的电阻和n型电阻来提高光电转换效率的晶体太阳能电池的制造方法半导体层设置在晶体基板的另一个主表面上。解决方案：具有在光接收表面和面对光接收表面的后表面之间具有光电转换功能的晶体基板的晶体太阳能电池100的制造方法至少依次包括：第一使用基底101作为晶体基板，在由p型单晶或多晶硅构成的板状基底101的一个主表面101b侧注入p型离子，形成p型半导体层102的工序; 对基座101进行第一退火处理的第二步骤; 通过在基座101的另一个主表面101a侧注入n型离子来形成n型半导体层103的第三步骤; 以及对基座101执行第二退火处理的第四步骤。版权所有（C）2013，JPO＆INPIT

15. 发明专利

JP2013012319A Ion implantation method and method for manufacturing magnetic recording medium 有权
标题翻译：离子注入方法和制造磁记录介质的方法
公开(公告)号：JP2013012319A
公开(公告)日：2013-01-17
申请号：JP2011142821
申请日：2011-06-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： YAMAGUCHI NOBORU , NISHIBASHI TSUTOMU , FURUKAWA YUKIHIRO , ISHIKAWA MICHIO
IPC分类号： H01J27/02 , C23C14/48 , G11B5/84 , G11B5/855 , H01J27/16 , H01J37/08 , H01J37/317
摘要： PROBLEM TO BE SOLVED: To provide an ion implantation method with good productivity, by which a uniform ion concentration distribution can be obtained over the whole length in the thickness direction of a workpiece at a constant acceleration voltage.SOLUTION: In the ion implantation method of the present invention, a predetermined treatment gas is introduced under reduced pressure to form plasma, ions in the plasma are extracted, and the extracted ions are implanted into a workpiece W by being accelerated. As the treatment gas, at least one selected from molecules represented by XY(In the formula, X and Y are mutually different elements, one of X and Y is an atom having a mass number of 1, the other is an atom having a mass number of 5-40, m is 1 to 4, and n is 1 to 10.) is used.
摘要翻译：要解决的问题：提供一种生产率高的离子注入方法，通过该离子注入方法可以在恒定的加速电压下在工件的厚度方向上的整个长度上获得均匀的离子浓度分布。解决方案：在本发明的离子注入方法中，在减压下引入预定的处理气体以形成等离子体，提取等离子体中的离子，并且通过加速将提取的离子注入工件W。作为处理气体，选自由X n 表示的分子中的至少一种（在该式中，X和Y为相互不同的元素，X和Y之一是质量数为1的原子，另一个是质量数为5-40的原子，m为1至4，n为1至10.）。版权所有（C）2013，JPO＆INPIT

16. 发明专利

JP2012146708A Bonding method of substrate and method of manufacturing laminate substrate 有权
标题翻译：基板的接合方法和制造层压基板的方法
公开(公告)号：JP2012146708A
公开(公告)日：2012-08-02
申请号：JP2011001556
申请日：2011-01-06
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： ISHIKAWA MICHIO , TOYODA SATOSHI , MURAKAMI HIROHIKO , IRIKURA HAGANE
IPC分类号： H01L21/02 , H01L21/312
摘要： PROBLEM TO BE SOLVED: To provide a bonding method of substrates capable of suppressing warpage when a plurality of substrates are bonded.SOLUTION: The bonding method of substrates includes a first monomer deposition step for depositing a first monomer on the surface of a first substrate, a second monomer deposition step for depositing a second monomer, which reacts on the first monomer to form a polymer, on the surface of a second substrate, and a polymer formation step for bonding the first substrate and the second substrate by mounting the first substrate and the second substrate so that the surfaces, on which the monomer is deposited, face each other, bringing the surface, on which the first monomer is deposited, and the surface, on which the second monomer is deposited, into contact with each other, and then forming a polymer by reacting the first monomer and the second monomer.
摘要翻译：要解决的问题：提供当粘合多个基板时能够抑制翘曲的基板的接合方法。解决方案：基板的接合方法包括用于在第一基板的表面上沉积第一单体的第一单体沉积步骤，用于沉积第二单体的第二单体沉积步骤，其在第一单体上反应以形成聚合物在第二基板的表面上，以及聚合物形成步骤，用于通过安装第一基板和第二基板使得第一基板和第二基板彼此面对，从而使第一基板和第二基板彼此面对其上沉积有第一单体的表面和沉积第二单体的表面彼此接触，然后通过使第一单体和第二单体反应形成聚合物。版权所有（C）2012，JPO＆INPIT

17. 发明专利

JP2008211090A Method and apparatus for manufacturing semiconductor device 审中-公开
标题翻译：制造半导体器件的方法和装置
公开(公告)号：JP2008211090A
公开(公告)日：2008-09-11
申请号：JP2007048065
申请日：2007-02-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HATANAKA MASANOBU , TSUMAGARI KANAKO , ISHIKAWA MICHIO
IPC分类号： H01L21/285 , C23C16/34 , H01L21/31 , H01L21/318 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, where reliability and productivity are improved in a metal cap layer, and to provide an apparatus for manufacturing the semiconductor device. SOLUTION: A second interlayer insulating film and first wiring, or a second wiring layer and a hard mask are formed on the surface of a silicon substrate 2, the silicon substrate 2 is conveyed to a reaction chamber S, and N 2 gas excited by microwaves is introduced to the reaction chamber S. Ar gas allows Zr(BH 4 ) 4 stored in a supply tank T to bubble, and the Ar gas containing Zr(BH 4 ) 4 is introduced to the reaction chamber S as Zr(BH 4 ) 4 gas. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种在金属盖层中提高可靠性和生产率的半导体器件的制造方法，并提供一种半导体器件的制造装置。解决方案：在硅衬底2的表面上形成第二层间绝缘膜和第一布线或第二布线层和硬掩模，将硅衬底2输送到反应室S，并且将N 4 ） 4 起泡，并且将含有Zr（BH 4 ） 4 的Ar气体以Zr（BH 4 ）引入到反应室S中， / SB>气体。版权所有（C）2008，JPO＆INPIT

18. 发明专利

JP2008211079A Barrier film and forming method thereof, and multilayer interconnection structure and manufacturing method thereof 审中-公开
标题翻译：遮蔽膜及其形成方法，以及多层互连结构及其制造方法
公开(公告)号：JP2008211079A
公开(公告)日：2008-09-11
申请号：JP2007047944
申请日：2007-02-27
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HATANAKA MASANOBU , TSUMAGARI KANAKO , ISHIKAWA MICHIO
IPC分类号： H01L21/285 , C23C16/38 , H01L21/28 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a barrier film except a Ta film and the barrier film obtained by the method, and to provide a multilayer interconnection structure including the barrier film and a method of manufacturing the multilayer interconnection structure. SOLUTION: On the surface of a film formation object having an insulating film on which a hole and a wiring groove are formed, feed gas comprising Zr(BH 4 ) 4 gas reacts by Chemical Vapor Deposition (CVD) to gas obtained by exciting reaction gas formed by N 2 gas by an excitation means, and a ZrBN film 41 used as the barrier film is formed. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：待解决的问题：提供一种形成除了Ta膜之外的阻挡膜的方法和通过该方法获得的阻挡膜，并且提供包括阻挡膜的多层互连结构和制造多层互连结构的方法。解决方案：在具有形成有孔和布线槽的绝缘膜的成膜物体的表面上，包含Zr（BH 4 ）SB＃4

19. 发明专利

JP2008028046A Thin-film forming method and copper wiring film forming method 有权
标题翻译：薄膜成型方法和铜线形成方法
公开(公告)号：JP2008028046A
公开(公告)日：2008-02-07
申请号：JP2006197467
申请日：2006-07-19
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： KODAMA YOHEI , YOSHIHAMA TOMOYUKI , TOYODA SATOSHI , ISHIKAWA MICHIO , ITSUDO SHIGEFUMI
IPC分类号： H01L21/768 , C23C14/14 , C23C14/34 , H01L21/285 , H01L21/3205 , H01L23/52
摘要： PROBLEM TO BE SOLVED: To reduce the conduction resistance of a contact hole or a via hole.
SOLUTION: The space between a target 20 and a film formation object 17 is surrounded by an anode electrode 4, and the positive voltage, applied to the anode electrode 4 and the negative voltage, applied to the film formation object 17 are controlled. While maintaining a state, wherein the deposition speed at the bottom of a shallow hole is higher than the etching speed, the etching speed is made not lower than the deposition speed at the bottom of a deep hole. A barrier film is not formed at the bottom of the deep hole; and the barrier film can be formed on the bottom of the shallow hole and the side faces of the deep hole and the shallow hole, so that the copper wiring film can be brought into direct contact with the electrically conductive material under the bottom of the deep hole, and the conduction resistance is reduced.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：降低接触孔或通孔的导通电阻。解决方案：靶20和成膜物体17之间的空间由阳极电极4包围，并且施加到成膜物体17的施加到阳极电极4的正电压和负电压被控制。在保持浅孔底部的沉积速度高于蚀刻速度的状态下，蚀刻速度不低于深孔底部的沉积速度。深孔底部不形成阻挡膜; 并且阻挡膜可以形成在浅孔的底部和深孔和浅孔的侧面上，使得铜布线膜可以与深度底部的导电材料直接接触导通电阻降低。版权所有（C）2008，JPO＆INPIT

20. 发明专利

JP2006009144A Vacuum film-forming apparatus 有权
标题翻译：真空成膜装置
公开(公告)号：JP2006009144A
公开(公告)日：2006-01-12
申请号：JP2005130851
申请日：2005-04-28
申请人： Ulvac Japan Ltd , 株式会社アルバック
发明人： HATANAKA MASANOBU , ISHIKAWA MICHIO , HAYASHI SEISHIYU , NAKAMURA FUMIO
IPC分类号： C23C16/52 , C23C14/00 , C23C16/00 , C23C16/02 , C23C16/34 , C23C16/38 , C23C16/44 , C23C16/455 , C23C16/54 , H01L21/285
CPC分类号： C23C16/38 , C23C16/0236 , C23C16/34 , C23C16/44 , C23C16/4405 , C23C16/45525 , C23C16/45536 , C23C16/45551 , C23C16/54 , Y10S414/139
摘要： PROBLEM TO BE SOLVED: To provide a film-forming apparatus which permits the independent establishment of process conditions for the adsorption and reaction processes, can obtain a thin film having excellent film quality, can accelerate the cycle time of a film forming process, and can be manufactured at a low cost. SOLUTION: The vacuum film-forming apparatus comprises: substrate stages; bell jar-shaped containers; a means for moving the object for film formation; and gas-introduction means, wherein, at the time of a film formation process, either an adsorption step where vacuum chambers are formed between the substrate stages and the containers, and a raw gas and a reactant gas are introduced into each space of the vacuum chamber through each gas-introduction means to adsorb the raw gas on the object for film formation or a reaction step for reacting the raw gas with the reactant gas can be carried out. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了提供允许独立建立吸附和反应过程的工艺条件的成膜设备，可以获得具有优异膜质量的薄膜，可以加速成膜过程的循环时间，并且可以以低成本制造。
解决方案：真空成膜装置包括：基板台; 钟形瓶形容器; 移动物体用于成膜的装置; 气体导入机构，其中，在成膜过程中，在基板台和容器之间形成真空室的吸附步骤，将原料气体和反应气体引入真空的每个空间可以通过各气体导入单元将原料气体吸附在成膜体上，或者使原料气体与反应气体反应的反应工序。版权所有（C）2006，JPO＆NCIPI

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