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11. 发明专利

JPH08146607A PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JPH08146607A
公开(公告)日：1996-06-07
申请号：JP28180294
申请日：1994-11-16
申请人： TOSHIBA CORP
发明人： ASAKAWA KOUJI , GOKOCHI TORU , NAITO TAKUYA , SHINODA NAOMI , NAKASE MAKOTO
IPC分类号： G03F7/004 , C08F2/50 , C08L101/00 , G03F7/039 , H01L21/027
摘要： PURPOSE: To obtain high sensitivity and high resolution to ultraviolet rays extremely short in wavelength, especially, ArF excimer laser beams by incorporating an alkali-soluble resin, a compound to be changed in solubility by an acid and a specified compound to be allowed to produce an acid by irradiation with chemical radiation. CONSTITUTION: The photosensitive composition contains the alkali-soluble resin, the compound to be changed in solubility by an acid, and the compound to be allowed to produce an acid and selected from at least one of the compounds represented by formulae I-III in which A is a polycyclic aromatic ring having at least 5 conjugated double bonds; Z is a Cl or Br or the like atom; R is an H atom or a and R is, independently, an H or halogen atom or a nitro or cyano group or the like.

12. 发明专利

JP2014240994A 近接場露光用マスク、レジストパターン形成方法、デバイスの製造方法、近接場露光方法、パターン形成方法、近接場光リソグラフィ部材、および近接場ナノインプリント方法有权
标题翻译：用于近场曝光的掩模，用于形成电阻图案的方法，制造装置的方法，近场曝光方法，图案形成方法，近场光刻成像和近场纳米印刷方法
公开(公告)号：JP2014240994A
公开(公告)日：2014-12-25
申请号：JP2014203371
申请日：2014-10-01
申请人：株式会社東芝 , Toshiba Corp
发明人： SHINODA NAOMI , TODORI KENJI , MORI SHIGEHIKO , YAMADA HIROSHI , YAMAGIWA MASAKAZU , YOSHIMURA REIKO , HOTTA YASUYUKI , TADA TSUKASA , KASHIWAGI HIROYUKI , YONEDA IKUO
IPC分类号： G03F1/00 , G03F7/20 , H01L21/027
摘要：【課題】大面積にわたってマスクと被露光物との密着を確保することを可能にする。【解決手段】本実施形態の近接場露光用マスクは、シリコン基板と、前記シリコン基板上に形成され、Au、Al、Ag、Cu、Cr、Sb、W、Ni、In、Ge、Sn、Pb、Zn、Pd、およびCの群から選択された少なくとも1つの元素を含む層、もしくはこれらの層の積層膜である近接場光発生部と、を備えている。【選択図】図1
摘要翻译：要解决的问题：确保在大面积上的掩模和曝光目标之间的粘附。解决方案：实施方案中描述的用于近场曝光的掩模包括硅衬底和形成在硅衬底上的近场光产生部分，其是含有选自Au，Al，Ag Cu，Cr，Sb，W，Ni，In，Ge，Sn，Pb，Zn，Pd和C中的至少一种元素的层或层压膜。

13. 发明专利

JP2012190915A Near-field exposure mask, resist pattern formation method, device manufacturing method, near-field exposure method, pattern formation method, near-field light lithography member, and near-field nanoimprint method 有权
标题翻译：近场曝光掩模，电阻图案形成方法，器件制造方法，近场曝光方法，图案形成方法，近场光刻成像和近场纳米法
公开(公告)号：JP2012190915A
公开(公告)日：2012-10-04
申请号：JP2011051698
申请日：2011-03-09
申请人： Toshiba Corp , 株式会社東芝
发明人： SHINODA NAOMI , TODORI KENJI , MORI SHIGEHIKO , YAMADA HIROSHI , YAMAGIWA MASAKAZU , YOSHIMURA REIKO , HOTTA YASUYUKI , TADA TSUKASA , KASHIWAGI HIROYUKI , YONEDA IKUO
IPC分类号： H01L21/027 , G03F1/68
CPC分类号： B29C59/16 , B29D11/0074 , B29L2011/00 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G03F1/50 , G03F7/0002 , G03F7/70325
摘要： PROBLEM TO BE SOLVED: To provide a near-field exposure mask, a resist pattern formation method, and a device manufacturing method capable of securing close contact between a mask and an exposure target over a large area.SOLUTION: A near-field exposure mask according to an embodiment comprises: a silicon substrate 2; and a near-field light generating film 6 formed on the silicon substrate 2 and formed of a layer containing at least one element selected from a group of Au, Al, Ag, Cu, Cr, Sb, W, Ni, In, Ge, Sn, Pb, Zn, Pd, and C, or a laminated film of these layers.
摘要翻译：要解决的问题：提供能够在大面积上确保掩模和曝光目标之间的紧密接触的近场曝光掩模，抗蚀剂图案形成方法和器件制造方法。解决方案：根据实施例的近场曝光掩模包括：硅衬底2; 以及形成在硅衬底2上并由含有选自Au，Al，Ag，Cu，Cr，Sb，W，Ni，In，Ge中的至少一种元素的层形成的近场光产生膜6， Sn，Pb，Zn，Pd和C，或这些层的层叠膜。版权所有（C）2013，JPO＆INPIT

14. 发明专利

JP2010141354A Light emitting device and manufacturing method thereof 有权
标题翻译：发光装置及其制造方法
公开(公告)号：JP2010141354A
公开(公告)日：2010-06-24
申请号：JP2010050510
申请日：2010-03-08
申请人： Toshiba Corp , 株式会社東芝
发明人： KANEKO KATSURA , SHINODA NAOMI , YAMAMOTO MASAHIRO , HATTORI YASUSHI
IPC分类号： H01L33/50 , C09K11/59 , C09K11/80 , C09K11/84
CPC分类号： H01L2224/48091 , H01L2224/8592 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which emits homogeneous light with a high output.
SOLUTION: A light emitting device comprises a container (1), a light emission chip (2) disposed on the bottom of the container, and a phosphor layer (3) formed having a thickness of not smaller than 80 μm and not larger than 240 μm on the top face of the light emission chip. The phosphor layer is composed of a resin wherein phosphor particles having grain sizes of not smaller than 20 μm and not larger than 45 μm is dispersed at the concentration of not smaller than 40 wt.% and notlar than 60 wt.% and has unevenness reflecting shapes of the phosphor particles on the surface. The phosphor particles contain at least one kind selected from among a group composed of a yttrium aluminum garnet oxide phosphor, an alkaline-earth metal silicate based phosphor, a nitride based phosphor, an alkaline-earth silicon nitride based phosphor, a rare-earth oxychalcogenide based phosphor, an alkaline-earth silicon oxynitride based phosphor, and an alkaline-earth magnesium silicate based phosphor.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供以高输出发出均匀的光的发光装置。解决方案：发光器件包括容器（1），设置在容器底部的发光芯片（2）和形成有不小于80μm的厚度的荧光体层（3）在发光芯片的顶面大于240μm。荧光体层由树脂构成，其中粒径不小于20μm且不大于45μm的荧光体颗粒以不小于40重量％并且不超过60重量％的浓度分散并具有不均匀反射表面上的荧光体颗粒的形状。荧光体粒子含有选自由钇铝石榴石氧化物荧光体，碱土金属硅酸盐系荧光体，氮化物系荧光体，碱土金属氮化物系荧光体，稀土类氧化硫化物碱土金属氮氧化物基荧光体和碱土金属硅酸镁系荧光体。版权所有（C）2010，JPO＆INPIT

15. 发明专利

JP2006028310A Method for producing nitrogen-containing fluorophor, the resultant fluorophor, and light-emitting device 有权
标题翻译：生产含氮的荧光剂，荧光物质和发光装置的方法
公开(公告)号：JP2006028310A
公开(公告)日：2006-02-02
申请号：JP2004207723
申请日：2004-07-14
申请人： Toshiba Corp , Toshiba Lighting & Technology Corp , Toshiba Materials Co Ltd , 東芝マテリアル株式会社 , 東芝ライテック株式会社 , 株式会社東芝
发明人： HIRAMATSU RYOSUKE , TAMAYA MASAAKI , SHINODA NAOMI , OTSUKA KAZUAKI , TSUTSUI YOSHIHITO , UETAKE HISAYO
IPC分类号： C09K11/08 , C09K11/59 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： C01B21/0602 , C01P2002/54 , C01P2002/84 , C09K11/0883 , C09K11/7721 , C09K11/7734 , H01L33/502 , H01L2224/48091 , H01L2924/181 , H01L2933/0041 , Y02B20/181 , H01L2924/00012 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a method for efficiently producing a fluorophor exhibiting useful white light-emitting characteristics.
SOLUTION: The method for producing the nitrogen-containing fluorophor comprises the step of containing an oxide fluorophor having two or more kinds of metal elements into a container body molded mainly from silicon carbide or carbon and the step of firing the oxide fluorophor in the container body in a nitrogen-containing reducing mixed gas atmosphere.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种有效地制造显示有用的白色发光特性的荧光体的方法。解决方案：含氮荧光体的制造方法包括将主要由碳化硅或碳成型的容器体中含有具有2种以上金属元素的氧化物荧光体的步骤和将氧化物荧光体烧成的工序该容器体在含氮还原性混合气体气氛中。版权所有（C）2006，JPO＆NCIPI

16. 发明专利

JP2004199084A Method for forming resist pattern 有权
标题翻译：形成电阻图案的方法
公开(公告)号：JP2004199084A
公开(公告)日：2004-07-15
申请号：JP2004036944
申请日：2004-02-13
申请人： Toshiba Corp , 株式会社東芝
发明人： OKINO TAKASHI , ASAKAWA KOUJI , SHINODA NAOMI , GOKOCHI TORU , NAKASE MAKOTO
IPC分类号： G03F7/039 , G03F7/20 , G03F7/26 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a practical method for forming a resist pattern by a PCM (portable comfortable mask) method which can be carried out with electron beams and which uses a specified material as an upper layer material having a high absorption wavelength range to be able to give a mask at the time of exposure of a lower layer and hardly producing a mixing region with the lower layer film. SOLUTION: The method includes processes of: forming a lower layer photosensitive material film on a substrate; forming an upper layer photosensitive material film containing a substituted or unsubstituted benzene ring or polycyclic condensed aromatic ring or alicyclic skeleton on the lower layer photosensitive material film; exposing a specified region of the upper layer photosensitive material film to electron beams; dissolving and removing the exposed part or the unexposed part of the upper layer photosensitive material film after exposure with an alkali aqueous solution to develop; and irradiating the entire region with the light of 190 to 260 nm wavelengths while using the upper layer photosensitive material film pattern obtained by the above developing process as a mask, and developing to selectively dissolve and remove the exposed part to transfer the pattern of the upper layer photosensitive material film to the lower layer photosensitive material film. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过PCM（便携式舒适掩模）方法形成抗蚀剂图案的实用方法，该方法可以用电子束进行，并且使用特定材料作为具有高吸收性的上层材料波长范围能够在下层曝光时产生掩模，并且几乎不产生与下层膜的混合区域。解决方案：该方法包括以下步骤：在基板上形成下层感光材料膜; 在下层感光材料膜上形成含有取代或未取代的苯环或多环稠合芳环或脂环骨架的上层感光材料膜; 将上层感光材料膜的指定区域暴露于电子束; 在用碱性水溶液曝光后溶解和除去上层感光材料膜的暴露部分或未曝光部分以形成; 并用190-260nm波长的光照射整个区域，同时使用通过上述显影过程获得的上层感光材料膜图案作为掩模，并显影以选择性地溶解和去除暴露部分以转移上部图案的图案层感光材料膜到下层感光材料膜。版权所有（C）2004，JPO＆NCIPI

17. 发明专利

JP2001131232A POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST 失效
公开(公告)号：JP2001131232A
公开(公告)日：2001-05-15
申请号：JP31232999
申请日：1999-11-02
申请人： TOSHIBA CORP , DAICEL CHEM
发明人： GOKOCHI TORU , OKINO TAKASHI , ASAKAWA KOUJI , SHINODA NAOMI , FUNAKI KATSUNORI , TSUTSUMI KIYOHARU , HORAI AKIRA , INOUE KEIZO
IPC分类号： H01L21/027 , C08F2/48 , C08F20/18 , C08F20/30 , C08K5/00 , C08L33/04 , G03F7/039
摘要： PROBLEM TO BE SOLVED: To obtain a polymeric compound which not only is excellent in clarity, alkali resistance, and adhesive properties but also has a high etching resistance. SOLUTION: This polymeric compound contains at least one of monomer units represented by formula I (wherein R1 is H or methyl; and R2 and R3 are each H or hydroxyl) and may further contain at least one of monomer units selected from among monomer units represented by formulas II a and II b (wherein R1 is H or methyl; R4 and R5 are each H, hydroxyl, oxo, carboxyl, or the like provided they are not simultaneously H; and R7 and R8 are each H, hydroxyl, or oxo).

18. 发明专利

JPH11171835A MONOMER, POLYMERIC COMPOUND, PHOTOSENSITIVE COMPOSITION, PATTERN FORMATION USING THE COMPOSITION AND PRODUCTION OF ELECTRONIC COMPONENT 失效
公开(公告)号：JPH11171835A
公开(公告)日：1999-06-29
申请号：JP26092698
申请日：1998-08-31
申请人： TOSHIBA CORP
发明人： SHINODA NAOMI , NAKASE MAKOTO , GOKOCHI TORU , ASAKAWA KOUJI , OKINO TAKASHI , HAYASE SHUJI , NAKANO YOSHIHIKO
IPC分类号： G03F7/039 , C07C69/734 , C07C255/23 , C07D309/12 , C07F7/12 , C07F7/18 , C08F20/10 , C08F30/08 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a new monomer having an alicyclic skeleton and a specific acidolyzable group and giving polymeric compound useful as a base resin component for photosensitive compositions having excellent transparency for short- wavelength light and sufficient tolerance to dry etching and capable of forming a resist pattern. SOLUTION: This monomer is a compound of formula I [R is a group containing an alicyclic skeleton; R is hydrogen, a halogen or the like; X is a heteroatom-containing bivalent organic group; (j) is 0-3: r is a Si-containing monovalent organic group or a group of formula II (X and X are each the same as X : (k) and (m) are each 0-3; R is a bivalent alkyl; R is the same as R )], e.g. acetylterpineol. The compound is obtained e.g. by reacting terpineol, acetyl chloride and triethylamine. The subject polymeric compound having recurring units of formula II is obtained by (co)polymerizing the monomer of formula I. The polymeric compound is preferably a copolymer of a vinyl compound with the recurring units of formula III because the subject photosensitive composition can achieve its high resolution.

19. 发明专利

JPH103169A PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH103169A
公开(公告)日：1998-01-06
申请号：JP15696296
申请日：1996-06-18
申请人： TOSHIBA CORP
发明人： NAKASE MAKOTO , GOKOCHI TORU , KIHARA NAOKO , ASAKAWA KOUJI , SHINODA NAOMI , NAITO TAKUYA , SAITO SATOSHI
IPC分类号： G03F7/004 , C08L33/04 , C08L101/00 , C09D133/04 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To obtain a photosensitive composition high in sensitivity, superior in resolution, and superior in dry etching resistance, and free from occurrence of cracking and peeling from a substrate by incorporating a polymer compound having specified alicyclic structures or heterocyclic structures both on the side chains. SOLUTION: This photosensitive composition contains a polymer compound having an alicyclic structure having at least one kind of substituent selected from OH and NO2 groups on the side chains, and each of these alicyclic structures is derived from a cyclic compound of the formula; Cn H2n (n) being an integer of >=3} or a bicyclo compound or one of their condensed compounds, thus permitting the hydriphobicity of the alicyclic structure to be relieved and its hydrophilicity to be given.

20. 发明专利

JPH09325498A PHOTOSENSITIVE COMPOSITION 失效
公开(公告)号：JPH09325498A
公开(公告)日：1997-12-16
申请号：JP14309196
申请日：1996-06-05
申请人： TOSHIBA CORP
发明人： ASAKAWA KOUJI , GOKOCHI TORU , SHINODA NAOMI , NAKASE MAKOTO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To improve alkali solubility without impairing dry etching resistance by containing an alicyclic compound in a principal chain, and containing a polymer introduced with the acidic substituent in this alicyclic compound. SOLUTION: At least one kind of an alicyclic compound selected from cyclohexane and isobornyl is contained in the principal chain, and a polymer introduced with the acidic substituent is contained in the side chain of this alicyclic compound. A cyclic cyclocompound expressed by Cn H2n after polymerization, a compound forming its cyclocompound or condensed ring, or its substituted group is used as the alicyclic compound. The ratio of the alicyclic compound is preferably set to about 10-50mol%. Carboxylic acid or sulfonic acid is used as the acidic substituent introduced into the alicyclic compound, and the acidic substituent of about 15-70mol% is preferably contained in each segment of the polymer.

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