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12. 发明专利

JPS5559479A HEAT FIXING DEVICE IN DRY TYPE ELECTROPHOTOGRAPHIC COPIER 失效
公开(公告)号：JPS5559479A
公开(公告)日：1980-05-02
申请号：JP13169378
申请日：1978-10-27
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： ICHINOSE HIROSHI , NAKAYAMA SHIGERU , MIZUNOYA NOBUYUKI
IPC分类号： H05B3/10 , G03G15/20
摘要： PURPOSE:To achieve simpler production and higher performance by specifying the structure of the heating member. CONSTITUTION:The heating member 21 comprising forming a heat-resistant insulation film layer 23 composed of CG (crystallized glass) on top of a substrate 22 composed of PCV-K (18CrFe) or glass substrate then coating carbon as a resistor 24 and further parallel forming a pair of power feed parts 25 composed of silver palladium on both side ends in the lengthwise direction of the resistor 24 is prepared. This is then assembled together with wire guides 26a, 26b for guiding copying paper P to upper and lower frames 27a, 27b by way of heat-resistant insulation members 33 which absorb elongation and warpage owing to thermal expansion to form the upper and lower units 20A, 20B of the heat fixing device 20. Then, when power is supplied to the power feed part 25, the resistor 24 is heated and generates heat, whereby the copying paper P passing ing the conveying path 3 is heat fixed.

13. 发明专利

JPS5558372A SUBSTRATE 失效
公开(公告)号：JPS5558372A
公开(公告)日：1980-05-01
申请号：JP13235678
申请日：1978-10-27
申请人： TOKYO SHIBAURA ELECTRIC CO
发明人： MIZUNOYA NOBUYUKI
IPC分类号： C23D5/00 , H05K1/05
摘要： PURPOSE:To substrate for electrical wiring which is obtainable by forming an oxide layer on the surface of a metal substrate and further forming a crystallized galss layer and molten glass layer thereon and which is flat in the glass layer surface and is superior in dielectric strength. CONSTITUTION:A metal substrate 1 of 0.1-2.0mm thick of Fe-Ni, Fe-Cr, etc. whose coefficients of thermal expansion are approximate to those of glass is heated to 800-1200 deg.C to form an oxide layer 2 on the surface thereof. Next, a crystallized glass layer 3 composed of glass such as Al2O3, SiO2, B2O3, PbO, TiO2, etc. is formed thereon to thicknesses of 10-30mu, after which it is fired at 800-900 deg.C. The surface of this crystallized glass layer 3 is smooth and in its bottom the crystals firmly combine with the oxide layer 2 and are thereby bonded. Further on this is formed a molten glass layer 4 such as of Al2O3, SiO2, B2O3, PbO, etc. to thicknesses of 30-100mu, which is then fired at 800-900 deg.C. The surface of the molten glass layer 4 becomes good wiring members and has superior characteristics as a wiring substrate and substrate for face heater.

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