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11. 发明专利

JP2013168449A Substrate processing apparatus 有权
标题翻译：基板加工设备
公开(公告)号：JP2013168449A
公开(公告)日：2013-08-29
申请号：JP2012029860
申请日：2012-02-14
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： NAGASEKI KAZUYA , ITO ETSUJI , YOKOTA AKIHIRO , HIMORI SHINJI , MATSUYAMA SHOICHIRO
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01L21/465 , C23C14/35 , C23C14/351 , C23C14/352 , H01J37/32091 , H01J37/3266 , H01J37/32669 , H01J37/32688 , H01J37/345 , H01J37/3452 , H01L21/32136
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can prevent storage of charge in a gate electrode to reliably inhibit insulation breakdown of a gate oxide film.SOLUTION: A substrate processing apparatus generates an electric field E in a processing space between a susceptor 12 to which a high-frequency power is supplied and an upper electrode 13 arranged opposite to the susceptor 12; generates a magnetic field B in the processing space S by a number of electric magnet 25, electric magnet 26 arranged on a top face 13a of the upper electrode 13 when performing a plasma treatment on a wafer W placed on the susceptor 12 by using plasma generated by the electric field E; and adjusting a distribution of Ne (electron density) in the processing space S by superposing a distribution morphology of Ne of the plasma generated by the electric field E and a distribution morphology of Ne of the plasma generated by the magnetic field B thereby to uniformize Vdc (negative bias potential) on the surface of the wafer W.
摘要翻译：要解决的问题：提供一种能够防止栅电极中的电荷的存储以可靠地抑制栅氧化膜的绝缘击穿的基板处理装置。解决方案：基板处理装置在基座之间的处理空间中产生电场E 12，供给高频电力;和与感受体12相对设置的上部电极13; 通过利用等离子体产生的等离子体处理对放置在基座12上的晶片W进行等离子体处理，通过多个电磁体25，布置在上部电极13的顶面13a上的电磁体26，在处理空间S中产生磁场B. 通过电场E; 并且通过叠加由电场E产生的等离子体的Ne的分布形态和通过磁场B产生的等离子体的分布形态Ne来调整处理空间S中的Ne（电子密度）的分布，从而使Vdc均匀化（负偏置电位）。

12. 发明专利

JP2012216608A Substrate processing method 有权
标题翻译：基板处理方法
公开(公告)号：JP2012216608A
公开(公告)日：2012-11-08
申请号：JP2011079733
申请日：2011-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , YAMADA NORIKAZU , OSE TAKESHI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32697 , H01J37/32091 , H01J37/32165 , H01J37/32642 , H01J37/32706 , H01J37/32724 , H01J2237/327
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing apparatus capable of improving the etching processing controllability.SOLUTION: A substrate processing apparatus 10 has: a chamber 11 in which a pressure is reduced; a susceptor 12 arranged in the chamber 11 and on which a wafer W is mounted; an HF high-frequency power supply 18 applying a high-frequency voltage for plasma generation to the susceptor 12; an LF high-frequency power supply 20 applying a high-frequency voltage for bias voltage generation to the susceptor 12; and a DC voltage application unit 23 applying a rectangular-wave-shaped DC voltage to the susceptor 12.
摘要翻译：解决的问题：提供能够提高蚀刻处理可控性的基板处理装置。解决方案：基板处理装置10具有：压力降低的室11; 设置在腔室11中并且安装有晶片W的基座12; 向基座12施加用于等离子体产生的高频电压的HF高频电源18; 向基座12施加用于偏置电压产生的高频电压的LF高频电源20; 以及向基座12施加矩形波形的直流电压的直流电压施加单元23.（C）2013，JPO＆INPIT

13. 发明专利

JP2010238960A Substrate processing apparatus and substrate processing method 有权
标题翻译：基板处理装置和基板处理方法
公开(公告)号：JP2010238960A
公开(公告)日：2010-10-21
申请号：JP2009086035
申请日：2009-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： OSE TAKESHI , HIMORI SHINJI , ABE ATSUSHI , YAMADA NORIKAZU
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/02 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： PROBLEM TO BE SOLVED: To provide a substrate processing method that prevents the occurrence of output fluctuations in an excitation power application section and abnormal electrical discharge, by adjusting the timing of output fluctuations in a bias power application section and by suppressing the increase in the amplitude of high-frequency power for bias in a bias power application section. SOLUTION: The substrate processing method employs a substrate processing apparatus that includes: a mount (a lower electrode) 23; an upper electrode 24 disposed so as to oppose to the mount 23; the excitation power application section 35 that applies high-frequency power for gas excitation to the upper electrode 24; and the bias power application section 27 that applies high-frequency power for bias to the lower electrode 23. While the high-frequency power for gas excitation is controlled so as to intermittently change by changing the output of the excitation power application section 35 at predetermined timing, if a no-plasma state or an afterglow state exists in a housing chamber through control by the excitation power application section 35, the bias power application section 27 is turned off, or alternatively the output thereof is controlled so as to be lower than that provided when a predetermined output is provided by the excitation power application section. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种基板处理方法，通过调整偏置功率施加部中的输出波动的定时并抑制增加的激励功率施加部的输出波动的发生和异常放电，在偏置电力施加部分中用于偏置的高频电力的振幅。基板处理方法采用基板处理装置，其包括：安装件（下电极）23; 设置成与安装件23相对设置的上电极24; 激励功率施加部35，其向上部电极24施加用于气体激发的高频电力; 以及向下部电极23施加用于偏置的高频电力的偏置电力施加部27.通过将激励电力施加部35的输出以预定的方式变化来控制气体激励的高频电力，从而间歇地变化定时，如果通过激励功率施加部分35的控制在容纳室中存在无等离子体状态或余辉状态，偏置电力施加部分27被关闭，或者其输出被控制为低于当由激励电力施加部提供预定的输出时。版权所有（C）2011，JPO＆INPIT

14. 发明专利

JP2008042115A Mounting table for plasma treatment equipment and plasma treatment equipment 有权
标题翻译：等离子体处理设备和等离子体处理设备的安装表
公开(公告)号：JP2008042115A
公开(公告)日：2008-02-21
申请号：JP2006217871
申请日：2006-08-10
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： KOSHIISHI AKIRA , HIMORI SHINJI , MATSUYAMA SHOICHIRO
IPC分类号： H01L21/3065 , H01L21/683
摘要： PROBLEM TO BE SOLVED: To provide a mounting table for plasma treatment equipment in which the plasma treatment of a substrate can be carried out with high in-plane uniformity by enhancing the in-plane uniformity of electric field strength in plasma, and to provide plasma treatment equipment equipped with the mounting table. SOLUTION: The mounting table 2 for the plasma treatment equipment 1 comprises a conductor member also serving as a lower electrode 21 for plasma generation or the like; a dielectric layer 22 formed to cover the central part of the upper surface of the conductor member, and equalizing a high frequency electric field applied to plasma through a substrate (wafer W) to be treated; and an electrostatic chuck laminated on the dielectric layer 22 while burying an electrode film divided into a plurality of films spaced apart from each other in the radial direction of the mounting table, so that a high frequency can pass between them. The outer edge of the dielectric layer 22 is located directly under the inner edge of a separation region 23c between the divided electrode films 23b and 23d or on the outside thereof, and the divided electrode films 23b and 23d are insulated from each other against a high frequency. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于等离子体处理设备的安装台，其中通过提高等离子体中的电场强度的面内均匀性，能够以高的面内均匀性进行基板的等离子体处理，以及提供配备安装台的等离子体处理设备。解决方案：用于等离子体处理设备1的安装台2包括还用作等离子体产生的下电极21等的导体部件; 形成为覆盖导体构件的上表面的中心部分的电介质层22，并且通过待处理的衬底（晶片W）均衡施加到等离子体的高频电场; 以及在电介质层22上层叠的静电卡盘，同时在安装台的径向方向上分隔成分隔成多个膜的电极膜，使得它们之间能够通过高频。电介质层22的外边缘位于分隔电极膜23b和23d之间或其外侧的分离区域23c的内边缘的正下方，并且分隔电极膜23b和23d相对于高频率。版权所有（C）2008，JPO＆INPIT

15. 发明专利

JP2006286814A Plasma processor 有权
标题翻译：等离子体处理器
公开(公告)号：JP2006286814A
公开(公告)日：2006-10-19
申请号：JP2005102954
申请日：2005-03-31
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI , MATSUDO TATSUO
IPC分类号： H01L21/3065 , C23C16/509 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a capacity-coupled plasma processor, having high in-plane uniformity in plasma processing and less likely to cause charge-up damages. SOLUTION: The capacity-coupled plasma processor 100 has a chamber 1 kept in a vacuum atmosphere, first and second electrodes 2 and 18 provided in parallel with each other in the chamber 1, and a plasma generation mechanism 10 for forming a high-frequency electric field between the first and second electrodes 2 and 18 to generate plasma of a processing gas. The second electrode 18 has at least its facing part to the first electrode 2 divided into a first fragment 18c 1 and a second fragment 18c 2 , made of a conductor and floating or grounded, and further, has a variable DC power source for applying a voltage between the fragments 18c 1 and 18c 2 . COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种容量耦合等离子体处理器，其在等离子体处理中具有高的面内均匀性，并且不太可能引起电荷损失。解决方案：容量耦合等离子体处理器100具有保持在真空气氛中的腔室1，在腔室1中彼此平行设置的第一和第二电极2和18以及用于形成高的等离子体产生机构10 在第一和第二电极2和18之间的频率电场产生处理气体的等离子体。第二电极18至少具有与第一电极2相对的部分，分为由导体制成的第一片段18c和第二片段18c 2 ，并且浮动或接地，并且还具有用于在片段18c＆lt; SB＆gt; 1＆lt; SB＆gt;和18c＆lt; SB＆gt; 2＆lt; SB＆gt;之间施加电压的可变直流电源。版权所有（C）2007，JPO＆INPIT

16. 发明专利

JP2002203840A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JP2002203840A
公开(公告)日：2002-07-19
申请号：JP2001000095
申请日：2001-01-04
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA , HIMORI SHINJI
IPC分类号： H05H1/24 , B01J19/08 , C23C16/509 , H01L21/205 , H01L21/302 , H01L21/3065 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a new improved plasma treatment apparatus capable of enhancing E×B drift effect from a W side to an E side just under an upper electrode and contriving uniform plasma density and densification. SOLUTION: The plasma treatment apparatus is provided with a first electrode 108 capable of mounting an object to be treated in a vacuum treatment chamber 102, a second electrode 120 arranged oppositely on the first electrode 108, and a magnetic field application means 138 for forming a magnetic field having horizontality and directivity for the treatment face of an object to be treated. The second electrode 120 is composed of a center electrode 122 arranged in the center and earthed electrically, and a high frequency electrode 124 arranged in the circumference, and power is supplied from the west point (W) 134 of the magnetic field to the high frequency electrode 124.

17. 发明专利

JP2002198356A PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JP2002198356A
公开(公告)日：2002-07-12
申请号：JP2000395139
申请日：2000-12-26
申请人： TOKYO ELECTRON LTD
发明人： KOSHIISHI AKIRA , HIMORI SHINJI
IPC分类号： H05H1/46 , C23C16/44 , H01L21/205 , H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus that can improve a uniformity of a thin film by etching a resist film uniformly or improve a uniformity of the other plasma treatments, when the thin film being a treated object is etched by using a predetermined pattern through the resist film or the other plasma treatment are applied. SOLUTION: The plasma treatment apparatus 10 of this invention comprises an upper and a lower electrodes 12, 13 arranged within a treatment room 11, a second high-frequency power supply 15 applying a high-frequency power to the upper electrode 13, and a quartziferous shield ring 21 covering the peripheral edge of the undersurface of the upper electrode 13, and the contact area of the shield ring 21 with a plasma is covered by a plasma-resistant film 21B made of yttrium oxide.

18. 发明专利

JP2001118700A MATCHING DEVICE AND PLASMA TREATMENT APPARATUS 失效
公开(公告)号：JP2001118700A
公开(公告)日：2001-04-27
申请号：JP29452799
申请日：1999-10-15
申请人： TOKYO ELECTRON LTD , TOKYO HY POWER KK
发明人： HIMORI SHINJI , YUASA MITSUHIRO , WATABE KAZUYOSHI , SHIMADA JUNICHI
IPC分类号： H01L21/302 , C23C16/505 , H01J37/32 , H01L21/3065 , H03H7/40 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a matching device and a plasma treatment apparatus making use thereof, which makes impedance of high frequency load match with that of conducting path without enlarging its size and without prolonging matching period even in case of supplying high frequency power of more than 100 MHz. SOLUTION: The matching device 41 is constructed by a resonance rod 61 which transmits high frequency energy from high frequency power source 40 to a plasma generating electrode 21, a variable capacitor 62 connected to the resonance rod 61 and the electrode 21 in series which controls imaginary part of complex number of impedance, and easing 63 surrounding resonance rod 61 with ground connection, a link coil 64 which controls real part of complex number of impedance while making high frequency energy excite the resonance rod 61, and a controller 69 which controls the variable capacitor 62 and a driving part of the link coil 64 so that the system between high frequency power source 40 and ground connection including intermediation by plasma, may construct a serial resonance circuit in a state of matching.

19. 发明专利

JPH06216070A PLASMA SURFACE TREATING DEVICE 失效
公开(公告)号：JPH06216070A
公开(公告)日：1994-08-05
申请号：JP658993
申请日：1993-01-19
申请人： TOSHIBA CORP , TOKYO ELECTRON LTD
发明人： MITSUI TADASHI , SEKINE MAKOTO , HORIOKA KEIJI , ITO HITOSHI , HIROSE KEIZO , NAGASEKI KAZUYA , HIMORI SHINJI , MOCHIZUKI SHUJI
IPC分类号： H01L21/302
摘要： PURPOSE:To provide a plasma surface treating device which is capable of uniformly treating the surface of a work with plasma even if the work is large in diameter. CONSTITUTION:A plasma etching process is executed through such manner that electrons accelerated by an electron beam accelerating electrode 8 are made to irradiate a plasma source gas to generate plasma, and a semiconductor wafer 3 placed on a wafer holder 4 is etched with this plasma, wherein a reactive gas feed reservoir 17 equipped with blowoff holes and connected with a reaction gas supply source is provided in a film forming room.

20. 发明专利

JP2010212276A Plasma processing apparatus and electrode for the same 有权
标题翻译：等离子体处理装置和电极
公开(公告)号：JP2010212276A
公开(公告)日：2010-09-24
申请号：JP2009053423
申请日：2009-03-06
申请人： Tokyo Electron Ltd , 東京エレクトロン株式会社
发明人： HIMORI SHINJI
IPC分类号： H01L21/3065 , H05H1/46
CPC分类号： H01J37/32577 , H01J37/3255 , H01J2237/03
摘要： PROBLEM TO BE SOLVED: To control the distribution of high-frequency field strength consumed for generating plasma. SOLUTION: The electrode is used for a plasma etching apparatus 10 for generating plasma by high-frequency energy and processing a wafer W with the plasma. The electrode has a base material 105a formed of a metal, a first dielectric 105b provided on the center of a plasma side of the base material 105a and having at least a part exposed from the base material 105a, and a first resistor 105d provided between the first dielectric 105b and the plasma and formed of a metal with a predetermined pattern. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：控制产生等离子体消耗的高频场强的分布。解决方案：电极用于等离子体蚀刻装置10，用于通过高频能量产生等离子体并用等离子体处理晶片W. 电极具有由金属形成的基材105a，设置在基材105a的等离子体侧的中心并且具有至少一部分从基材105a露出的部分的第一电介质105b，以及设置在基材105a之间的第一电阻105d 第一电介质105b和等离子体，并由具有预定图案的金属形成。版权所有（C）2010，JPO＆INPIT

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