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11. 发明专利

JPH1187523A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH1187523A
公开(公告)日：1999-03-30
申请号：JP23936297
申请日：1997-09-04
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/822 , H01L21/8222 , H01L27/04 , H01L27/06 , H01L29/732
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of a specific structure for containing resistors and capacitors without complicating manufacturing steps by utilizing conventional manufacturing steps, while incorporating the characteristics of short turning-on time adapted to a predetermined circuit. SOLUTION: A first conductor layer 4, an insulating film 5 and a second conductor layer 6 are sequentially laminated on a surface of a base region 2 of a transistor formed on a semiconductor substrate to form a capacitor. Then, the layer 4 is connected to the layer 6 at the one end. A base electrode 7 is formed at the other end of the layer 6 and formed with a narrow part 6a on the way of a current path to the first conductor, layer, thereby forming a resistance component R. As a result, a resistor and a capacitor are connected in parallel between the region 2 and the electrode 7 of the transistor for quickening the turning-on time of the transistor.

12. 发明专利

JPH1168042A PROTECTIVE DEVICE AGAINST OVERCURRENT 失效
公开(公告)号：JPH1168042A
公开(公告)日：1999-03-09
申请号：JP22939097
申请日：1997-08-26
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L27/04 , H01L21/822
摘要： PROBLEM TO BE SOLVED: To obtain a protective device, against an overcurrent, whose structure is simple and which can be used semipermanently by a method wherein a second current passage can be formed in parallel with a first current passage in a semiconductor layer and a current-passage formation layer which comprises a resistance component is formed on the semiconductor layer via an insulating film. SOLUTION: A current-passage formation layer 1 is formed, via an insulating film 2, on a semiconductor layer 1 in which a first current passage 5 can be formed, it can form a second current passage 6 in parallel with the first current passage 5 in the semiconductor layer 1, and it comprises a resistance component. A connection means 7 electrically connects one end part of the first current passage 5 to one end part of the second current passage 6 in such a way that the first current passage 5 and the second current passage 6 are connected in series. In addition, an output terminal 5a and an input terminal 6a are installed in such a way that a current source can be connected across the other end part of the first current passage 5 and the other end part of the second current passage 6. In this manner, the current-passage formation layer 3 which comprises a resistance component is formed on the semiconductor layer 1 via the insulating film 2.

13. 发明专利

JPH10284613A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH10284613A
公开(公告)日：1998-10-23
申请号：JP8268997
申请日：1997-04-01
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/73 , H01L21/331 , H01L21/8222 , H01L27/082 , H01L29/732
摘要： PROBLEM TO BE SOLVED: To provide a Darlington structure transistor with high integration. SOLUTION: A silicon oxide film 21b isolates a base region 13 of a first transistor Tr1 from a base region 15 of a second transistor Tr2 , and isolates an emitter region 17 of the first transistor Tr1 from an emitter region 19 of the second transistor Tr2 . The emitter region 17 and the base region 15 are connected by an aluminum wiring 23. Thus, the Darlington structure can be realized, while the base regions of the two transistors are isolated from each other only by a width I of the silicon oxide film 21b.

14. 发明专利

JPH09252119A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH09252119A
公开(公告)日：1997-09-22
申请号：JP5904396
申请日：1996-03-15
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device of OSFET, UGBT and the like, which has structure where a gate finger extending from a gate electrode pad is eliminated and can uniformly apply gate voltage to the gate electrodes of respective unit cells. SOLUTION: The semiconductor device has a first conductive low impurity intensity layer 2 formed on a semiconductor substrate 1 acting as a common drain area, second conductive well areas 3 which are independently arranged in a matrix form in rows and columns that are selectively formed on the surface part of the low impurity intensity layer 2, first conductive source areas 4 formed in a circle on the surface in the well areas 3, source electrodes 8 which are brought into contact with the well areas 3 and the source areas 4 in common, and the gate electrodes 6 provided through gate insulating films 5 so that they cover the spaces between the well areas 3. The gate electrode pad 6 is formed on the insulating films 18 formed on the source electrodes 8, and it is electrically connected with the gate electrodes 6 through openings 17 formed in the insulating film 18.

15. 发明专利

JPH09121047A VERTICAL MOSFET 失效
公开(公告)号：JPH09121047A
公开(公告)日：1997-05-06
申请号：JP27596795
申请日：1995-10-24
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/06 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To minimize an inactive area by rotating the source areas adjacent to each other on the surfacial layer of a substrate which forms a common drain area and arranging them in matrix. SOLUTION: An n type epitaxial layer 2 for a common drain area is formed on a semiconductor substrate, and a square P type well 3 is arranged in matrix on the surfacial layer thereof. A square, circular source area 4a is formed in a manner that its respective sides are parallel to the arrangement direction, while source areas 4b, 4c, 4d, and 4e are square and circular and the area 4a rotated at 40 deg. is arranged thereagainst. A current flows not only in the adjoinging source areas but in an area surrounded with four source area, so that the surfacial area of the layer 2 for a drain area can be utilized as far as possible as a current route. Therefore, a vertical MOSFET can reduce the area rate of the inactive area, resulting in minimization of ON-state resistance.

16. 发明专利

JPH08274321A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH08274321A
公开(公告)日：1996-10-18
申请号：JP7531695
申请日：1995-03-31
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/06 , H01L23/482 , H01L29/417 , H01L29/78
摘要： PURPOSE: To provide a semiconductor device having a power MOSFET with sufficient strength for breakdown voltage without creating a failure of an FET cell due to transfer even though a power MOSFET has a switching operation. CONSTITUTION: This semiconductor device has a power MOSFET having a plurality of FET cells 10 on a semiconductor substrate 1 with the gate electrodes of the cells respectively connected together and a gate electrode pad 7 for connection to external terminals being formed through an insulating film 4a on the semiconductor substrate 1, and the gate electrode pad 7 is provided by extending over the FET cell 10 through an insulating film 11.

17. 发明专利

JP2012109590A SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：JP2012109590A
公开(公告)日：2012-06-07
申请号：JP2011288038
申请日：2011-12-28
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI , TAKAISHI AKIRA
IPC分类号： H01L29/78 , H01L21/329 , H01L21/822 , H01L27/04 , H01L27/06 , H01L29/861 , H01L29/866 , H01L29/868
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that has a protective diode having reduced series resistance and capable of sufficiently performing a protective function while utilizing an unused outer peripheral portion on a chip, without increasing the chip area.SOLUTION: A plurality of transistor cells T are arranged and formed in a semiconductor layer 4. A protective diode 1 is formed by alternately providing ring-shaped p-type layers and n-type layers of a polysilicon film on an insulating film 6 at a more outer peripheral side (a chip end side) than the plurality of transistor cells T. A metal film such as Al is connected to the outermost layer of the protective diode 1 in a ring shape. The metal film provided in a ring shape contacts source wiring 3 and a metal film 14. A metal film connected to the innermost layer of the protective diode 1 in a ring shape is connected to gate wiring 2 and is connected to gates of some of the cells on the outer peripheral side of the transistor cells T.

18. 发明专利

JP2008066619A Junction field-effect transistor and manufacturing method therefor 审中-公开
标题翻译：连接场效应晶体管及其制造方法
公开(公告)号：JP2008066619A
公开(公告)日：2008-03-21
申请号：JP2006245110
申请日：2006-09-11
申请人： Rohm Co Ltd , ローム株式会社
发明人： HIGASHIDA YOSHIFUMI
IPC分类号： H01L29/80 , H01L21/337 , H01L29/808
摘要： PROBLEM TO BE SOLVED: To provide a junction field-effect transistor which is reduced in planar size, and to provide a manufacturing method therefor.
SOLUTION: The junction field-effect transistor 1 has an n
- -type epitaxial layer 3 laminated on a semiconductor substrate 2. The n
- -type epitaxial layer 3 has a plurality of gate regions 4 formed separated at intervals, and also has source regions 6 formed between adjacent gate regions 4 separated at intervals among these gate regions 4. Intervals of deep portions of the adjacent gate regions 4 are narrower than intervals of surface layer portions thereof. Gate electrodes 5 and source electrodes 7 are connected to the gate regions 4 and the source regions 6. A drain electrode 8 is connected to the reverse side of the semiconductor substrate 2.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供减小平面尺寸的结型场效应晶体管，并提供其制造方法。结型场效应晶体管1具有层叠在半导体衬底2上的n - SP>型外延层3。具有形成为间隔隔开的多个栅极区域4，并且还具有形成在这些栅极区域4之间间隔开的相邻栅极区域4之间的源极区域6.相邻栅极区域4的深部分的间隔比表面层的间隔窄部分。栅电极5和源电极7连接到栅极区域4和源极区域6.漏极电极8连接到半导体衬底2的背面。（C）2008，JPO和INPIT

19. 发明专利

JP2001326354A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2001326354A
公开(公告)日：2001-11-22
申请号：JP2001005627
申请日：2001-01-12
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI , TAKAISHI AKIRA
IPC分类号： H01L27/04 , H01L21/336 , H01L21/822 , H01L27/02 , H01L27/06 , H01L29/06 , H01L29/739 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a protection diode which utilizes an outer peripheral part in which a chip is empty without increasing a chip area, while a series resistance is small and a protection function can sufficiently be fulfilled. SOLUTION: A plurality of transistor cells T are disposed and formed in a semiconductor layer 4. Ring-like p-type layers 1b and n-type layers 1a composed of a polysilicon film are alternately provided on an insulation film 6 on an outer peripheral side (chip end part side) of the plurality of transistor cells T, whereby a protection diode 1 is formed. In the protection diode 1, a gate wiring 2 composed of a metal film such as A1 or the like is annularly provided so as to contact an outermost layer of the protection diode 1, and a source wiring composed of a metal film is contacted with the innermost layer, to thereby connect between a gate and a source.

20. 发明专利

JP2000294779A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JP2000294779A
公开(公告)日：2000-10-20
申请号：JP10327599
申请日：1999-04-09
申请人： ROHM CO LTD
发明人： HIGASHIDA YOSHIFUMI , TAKAISHI AKIRA
IPC分类号： H01L29/78 , H01L27/04 , H01L29/739
摘要： PROBLEM TO BE SOLVED: To obtain a semiconductor device having a protection diode which is capable of improving the switching characteristics and reliability and a manufacturing method therefor, by forming gate electrode pads at a high impurity concentration without specially increasing the number of manufacturing process steps. SOLUTION: A plurality of p-type base regions 2 are provided in the surface of an n-type semiconductor layer 1, source regions 3 are formed within each region 2, and gate electrodes 6 are formed on the surface of the regions 3 through gate oxide films, whereby a plurality of transistor cells T are formed. A p-type diffusion region 7 is formed in the surface of the layer 1 independently of the regions 2, and gate electrode pads 9 are formed on the region 7. Annular removed parts 9a are formed at the pads 9, and a plurality of n-type regions 8 are formed in the region 7 at locations under the parts 9a. The regions 8 and the region 7 form a pn junction, whereby a protection diode section D is provided.

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