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11. 发明专利

JPS52141189A PRODUCTION OF DISTRIBUTION FEEDBACK TYPE SEMICONDUCTOR LASER 失效
公开(公告)号：JPS52141189A
公开(公告)日：1977-11-25
申请号：JP5720676
申请日：1976-05-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： OOMACHI TOKUROU , SAITOU HIDEHO , FURUKAWA YOSHITAKA
IPC分类号： H01L21/306 , H01S5/00 , H01S5/042 , H01S5/12
摘要： PURPOSE:To form distribution feedback type semiconductor lasers with good reproducibility by newly providing a layer having specific Al mixed crystal ratios and using a correspondingly specified etching solution at the time of forming the grating that produces distribution feedback.

12. 发明专利

JPS57132384A SEMICONDUCTOR LASER DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS57132384A
公开(公告)日：1982-08-16
申请号：JP1722681
申请日：1981-02-06
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TAKAHASHI SHINICHI , SAITOU HIDEHO , IWANE GANZOU
IPC分类号： H01S5/00 , H01S5/223
摘要： PURPOSE:To realize a high-efficiency laser oscilation by a method wherein two semiconductor regins are sandwiched between a semiconductor substrate and a lamination and a semiconductor clad layer included in the laminatin is continuously connected to the semiconductor substrate via a narrow passage provided between the two semiconductor regions. CONSTITUTION:Two p type or high resistance semiconductor regions 21 and 22 not comtinuously connected with each other are insertedly provided on the main surface 1 consisting of (a) and (b) of a semiconductor substrate 2 between said substrate 2 and a lamination 7. Accordingly, a current in an active layer 4 running from the clad layer 3 of the lamination 7 to the substrate 2 is provided with a surface (c) that is the only virtual passage for the current. The current in the active layer 4 is narrowed down when it leaves the active layer 4 toward the substrate 2 and the current running into the active layer 4 from the both sides thereof is also narrowed down. This setup results in a remarkably improved laser oscillation efficiency compared with a conventional setup.

13. 发明专利

JPS55115387A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS55115387A
公开(公告)日：1980-09-05
申请号：JP2174979
申请日：1979-02-26
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a device in which an active layer is not thermally damaged, by providing the device with a layer which serves for interruption of electrical current and also acts as an absorbing region for absorbing large wavelengths and by thereafter continuously growing a clad layer, an active layer, another clad layer and a cap layer on said layer. CONSTITUTION:A layer 12, which serves for interruption of electrical current and also acts as an absorbing layer for absorbing large wavelengths, is grown on an n-type InP substrate 11. The layer 12 is etched and striped by photolithography to provide current paths. An n-type InP clad layer 13, an n-type or p-type active InGaAsP layer 14, a p-type InP clad layer 15 and a p-type InGaAsP cap layer 16 are therafter continuously grown on the entire surface. According to this method, the active layer 14 is not thermally damaged during the growing and the crystallintity is improved. After that, as in the conventional cases, a p-side electrode 17 is coated on the layer 16, an n-side electrode 18 is coated on the reverse side of the substrate 11 and the substrate is cleft, thereby manufacturing a laser diode. This results in lengthening the lifetime of the device in which current constriction and transverse mode control are enabled.

14. 发明专利

JPS5456385A WAVELENGTH VARIABLE DISTRIBUTION FEEDBACK TYPE SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS5456385A
公开(公告)日：1979-05-07
申请号：JP12233277
申请日：1977-10-14
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO
IPC分类号： H01S5/00 , H01S5/042
摘要： PURPOSE:To make the wavelength of output light continuoulsy variable by bisecting a GaAs substrate with an arc form insulation region, providing periodci undulations perpendicular to the insulation region to the active layers grown thereon, forming a semiconductor layer thereon and providing a current path in the required region. CONSTITUTION:An arc form insulation region 20 is beforehand formed within an N type GaAs substrate 1, and an N type AlxGa1-xAs layer 2 and a GaAs or AlY Ga1-yAs (Y type current path 6 reaching the layer 4 is formed there. Next, a p type electrode 7 on the layer 5, and N type electrodes 9, 10 on the back of the substrate 1 isolated by the region 20 are respectively mounted.

15. 发明专利

JPS5422157A FORMATION METHOD OF SELECTIVE IMPURITY DIFFUSION REGION INTO IIIIV GROUP COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS5422157A
公开(公告)日：1979-02-19
申请号：JP8715177
申请日：1977-07-20
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： SAITOU HIDEHO , IWANE GANZOU , WAKITA KOUICHI
IPC分类号： H01L21/22 , H01L33/14 , H01L33/30
摘要： PURPOSE:To secure a selective diffusion of the impurity onto the III-V group compound semiconductor via the Al mask.

16. 发明专利

JPS52150962A PRODUCTION OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS52150962A
公开(公告)日：1977-12-15
申请号：JP6801476
申请日：1976-06-10
申请人： NIPPON TELEGRAPH & TELEPHONE , NIPPON ELECTRIC CO , FUJITSU LTD
发明人： KAWAKAMI GOUJI , SAITOU HIDEHO , MIZUSAWA KOUJI , NISHI HIROSHI
IPC分类号： H01L21/306 , H01L21/22 , H01L21/265
摘要： PURPOSE:To form a clean diffused layer by forming a film whose etching solution varies from that for a substrate, on the substrate and diffusing or ion-implanting an impurity through the film.

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