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11. 发明专利

JPH11224841A HEATING PROCESS DEVICE FOR MANUFACTURING X-RAY MASK AND RESIST COATER AND RESIST DEVELOPER USING THE DEVICE 失效
公开(公告)号：JPH11224841A
公开(公告)日：1999-08-17
申请号：JP2430698
申请日：1998-02-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： DEGUCHI KIMIKICHI , NAKAMURA JIRO , UCHIYAMA SHINGO , HAGA TSUNEYUKI
IPC分类号： G03F1/22 , H01L21/027 , G03F1/16
摘要： PROBLEM TO BE SOLVED: To form an absorber pattern with high dimensional and positional accuracy. SOLUTION: A heating process device 1 comprises a support stage 7, on which an X-ray mask substrate 13 is placed, and a hot plate 10 for heating a membrane part 16a. On a silicon substrate 14, a recessed part 15 is formed by back-etching as well as a frame part 14 before the membrane part 16a is formed. The support stage 7 is provided with a vertical motion drive means 9 for vertical movement, and the hot plate 10 is allocated so as to face the surface on the opposite side of the recessed part 15 of the membrane part 16a.

12. 发明专利

JPH08160605A POSITIVE TYPE RESIST MATERIAL 失效
公开(公告)号：JPH08160605A
公开(公告)日：1996-06-21
申请号：JP33172294
申请日：1994-12-09
申请人： SHINETSU CHEMICAL CO , NIPPON TELEGRAPH & TELEPHONE
发明人： TAKEMURA KATSUYA , TSUCHIYA JUNJI , ISHIHARA TOSHINOBU , TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , G03F7/075 , H01L21/027
摘要： PURPOSE: To provide a chemical amplification type silicone positive resist mate rial suitable for a two-layer resist material, having high sensitivity and high resolution, and excellent in process applicability by using a specific silicone polymer, an acid generating agent, and a specific dissolution inhibitor. CONSTITUTION: A silicone polymer expressed by formula I, an acid generating agent an generating acid by radioactive rays, and a dissolution inhibitor are used as principal constituents. The carboxy group or hydroxy group of a silicone compound expressed by formula II or III is protected by the t-butyl group or t-butoxy carbonyl methyl group for use as the dissolution inhibitor. In the formulas, Q indicates the t-butoxy carbonyl group or t-butoxy carbonyl methyl group, (n) indicates an integer of 1-3, (x), (m) are x+m=1, and (x) is non-zero. R indicates the methyl group of phenyl group, R indicates the carboxyethyl group or p-hydroxyphenyl alkyl group, (x) indicates the trimethylsilyl group or triphenylsilyl group, and (a), (b) are integers of 1-50.

13. 发明专利

JPH06266110A POSITIVE RESIST MATERIAL 失效
公开(公告)号：JPH06266110A
公开(公告)日：1994-09-22
申请号：JP7741993
申请日：1993-03-12
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO , MATSUDA KOREHITO
IPC分类号： G03F7/004 , G03F7/023 , G03F7/029 , G03F7/039 , H01L21/027
摘要： PURPOSE:To provide a positive resist material for exposure with high energy beams having sensitivity and resolution higher than those attained by the conventional technique and excellent in applicability to a process. CONSTITUTION:This positive resist material sensitive to high energy beams and developable with an aq. alkali soln. contains a base resin (A), a dissolution inhibitor (B) having two or more tert. butyl groups in one molecule, an onium salt (C) represented by a formula (R) nAM (where R is an arom. group or a substd. arom. group, (n) is 2 or 3, plural R's may be different from each other, A is sulfonium or iodonium and M is p-toluenesulfonate or trifluoromethane-sulfonate) and a nitrogen-contg. compd. (D) such as fatty acid amide, an aminobenzene deriv. or a nitrogen-contg. heterocyclic compd. This resist material is hardly affected by nitrogen-contg. compds. in the air and can neglect the problem of time delay.

14. 发明专利

JPH04349463A POSITIVE TYPE RESIST MATERIAL 失效
公开(公告)号：JPH04349463A
公开(公告)日：1992-12-03
申请号：JP12147591
申请日：1991-05-27
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： BAN KOJI , NAKAMURA JIRO , TANAKA HARUYORI , SAITO TORAO
IPC分类号： G03F7/004 , G03F7/029 , G03F7/039 , H01L21/027
摘要： PURPOSE:To improve the heat resistance required for substrate working and to decrease pattern deformation. CONSTITUTION:This resist material contains a novolak resin, a dissolution inhibitor, an onium salt, and a photo-radical polymn. initiator, is developable with an aq. alkaline soln. and is sensitive to high energy rays.

15. 发明专利

JPH04338958A RESIST MATERIAL, ITS MANUFACTURE, AND PATTERN FORMING METHOD USING SAME 失效
公开(公告)号：JPH04338958A
公开(公告)日：1992-11-26
申请号：JP13806091
申请日：1991-06-10
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TANAKA HARUYORI , KAWAI YOSHIO , BAN KOJI , NAKAMURA JIRO , KIMURA TAKAO
IPC分类号： G03F7/004 , C08G77/14 , G03F7/029 , G03F7/075 , G03F7/26 , H01L21/027
摘要： PURPOSE:To obtain the alkali-developable type resist material high in glass transition point, superior in O2 RIE resistance, and usable against energy rays in a wide range by composing the resist with a specified polysiloxane and an acid generating agent. CONSTITUTION:The polysiloxane to be used has structural units each represented by formulae I-III and each unit combines with each other to form a siloxane bond and to form the siloxane, and the acid generating agent is used together with the polysiloxane. In formulae I-III, each of R1-R3 is an organic residue, and one or all of them has an oxirane rung. Such a resist material may contain an organic polymer having hydroxyl groups or an epoxy compound. It is preferred that a part of R1-R3 is a 2-(3,4-epoxycyclohexyl)-ethyl group and the other is a phenyl group and the acid generating agent is diphenyl-4-thiophenoxyphenylsulfoniumhexafluorophosphate.

16. 发明专利

JPH04269757A FORMATION OF RESIST PATTERN 失效
公开(公告)号：JPH04269757A
公开(公告)日：1992-09-25
申请号：JP5021591
申请日：1991-02-25
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： BAN KOJI , NAKAMURA JIRO , SAITO TORAO , TANAKA HARUYORI
IPC分类号： G03F7/26 , G03F7/38 , H01L21/027 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To obtain a resist pattern extremely effective for a lift-off method. CONSTITUTION:The method of forming a resist pattern includes a process to coat a substrate with a chemically amplified positive-type resist which responds to high energy beams, process to prebake, process to expose the pattern to high energy beams, process to treat the pattern with heat after exposure, and process to develop. It is preferable that the positive resist used contains two components comprising a novolac resin and bis(t-butylphenyl) iodonium fluoromethyl sulfonate, and if necessary, three components comprising above compds. and 2,2-bis(t-butoxy carbonyl oxyphenyl) propane. A pattern of inversed tapered form can be formed by a simple process, which is extremely useful for the lift-off processing of microfabrication technique.

17. 发明专利

JPH03253858A MATERIAL AND METHOD FOR FORMING PATTERN 失效
公开(公告)号：JPH03253858A
公开(公告)日：1991-11-12
申请号：JP5171290
申请日：1990-03-05
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： TANAKA HARUYORI , NAKAMURA JIRO , BAN KOJI
IPC分类号： G03F7/004 , G03F7/022 , G03F7/26 , H01L21/027
摘要： PURPOSE:To enable a resist resin composition to be developed with an aqueous solution of alkali low in concentration by incorporating a diazonaphthoquinone derivative having a hydroxyl group in the resist resin composition. CONSTITUTION:The resist resin composition is composed essentially of an alkali- soluble polymer having hydroxyl groups and a crosslinking agent and an acid- generating agent to be allowed to generate the acid by irradiation with high- energy beams, and the diazonaphthoquinone derivative having a hydroxyl group is incorporated in the resist resin composition. When it is patternwise exposed to the energy beams, the acid is generated at the exposed parts and baking after exposure allows the hydroxyl groups of the base polymer and the diazonaphthoquinone derivative to react with the cross-linking agent by the generated acid as a catalyst and restrains the alkali-solubility of the polymer, and the solubility at the nonexposed areas is greatly improved by exposing the whole surface to ultraviolet rays to convert the naphthoquinone derivative into an indenecarboxylic acid, thus permitting a latent image to be developed with an aqueous solution of alkali low in concentration.

18. 发明专利

JP2000131854A CHEMICAL AMPLIFICATION RESIST PATTERN FORMING METHOD 失效
公开(公告)号：JP2000131854A
公开(公告)日：2000-05-12
申请号：JP30302798
申请日：1998-10-23
申请人： NIPPON TELEGRAPH & TELEPHONE
发明人： NAKAMURA JIRO , DEGUCHI KIMIKICHI
IPC分类号： H01L21/027 , G03F7/038 , G03F7/039 , G03F7/38
摘要： PROBLEM TO BE SOLVED: To provide a chemical amplification resist pattern forming method capable of suppressing the occurrence of defects in pattern shape due to the catalytic reaction of an acid generated in an exposure atmosphere. SOLUTION: The top of a substrate is coated with a chemical amplification resist containing an acid-generating agent (step a). The substrate is subjected to primary heat treatment (step b), exposed by irradiation with high energy beams (step c) and subjected to secondary heat treatment (step d). The chemical amplification resist is then developed with an alkaline aqueous solution (step e) to form a chemical amplification resist pattern. In this method, the chemical amplification resist on the substrate is exposed to a basic material after one of the step a, b or c.

19. 发明专利

JPH0915848A CHEMICAL AMPLIFICATION POSITIVE TYPE RESIST MATERIAL 失效
公开(公告)号：JPH0915848A
公开(公告)日：1997-01-17
申请号：JP18616795
申请日：1995-06-29
申请人： SHINETSU CHEMICAL CO , NIPPON TELEGRAPH & TELEPHONE
发明人： OSAWA YOICHI , TAKEMURA KATSUYA , WATANABE SATOSHI , ISHIHARA TOSHINOBU , NAGURA SHIGEHIRO , TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： H01L21/027 , G03F7/004
摘要： PURPOSE: To provide a chemical amplification positive type resist material having a high resolution suitable for fine working technique. CONSTITUTION: This material contains, as acid generating agent, a sulfonium salt represented by the formula and having at least one acid unstable group in the third position of the phenyl group in the molecule. In the formula, R represents hydrogen atom, an alkyl group, an alkoxy group or a dialkylamino group, OR represents an acid unstable group, Y represents a substituted or non-substituted alkylsulfonate or arylsulfonate. (n) represents an integer of 0-2, (m) represents an integer of 1-3, and the sum of (n) and (m) is 3.

20. 发明专利

JPH08248626A CHEMICALLY SENSITIZED POSITIVE RESIST MATERIAL 失效
公开(公告)号：JPH08248626A
公开(公告)日：1996-09-27
申请号：JP7462995
申请日：1995-03-07
申请人： SHINETSU CHEMICAL CO , NIPPON TELEGRAPH & TELEPHONE
发明人： OSAWA YOICHI , WATANABE SATOSHI , ISHIHARA TOSHINOBU , TANAKA HARUYORI , KAWAI YOSHIO , NAKAMURA JIRO
IPC分类号： G03F7/004 , G03F7/039 , H01L21/027
摘要： PURPOSE: To provide a chemically sensitized positive resist material which has a high sensitivity against high energy beam radiation such as far ultraviolet rays, electron beam, and X-rays, and by which pattern formation can be made by developing it with an alkali aqueous solution, so that it is suitable for fine working technique. CONSTITUTION: A chemically sensitized positive resist material is that which includes a new sulfonium salt as shown by the formula. In the formula, R1 denotes a hydrogen atom, alkyl group, alkoxyl group or dialkylamino group, and Y denotes trisulfomethanesulfonate or p-toluensulfonate. The n is an integer of 0 to 2, m is an integer of 1 to 3, and n+m=3.

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