专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2002176229A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002176229A
公开(公告)日：2002-06-21
申请号：JP2000372827
申请日：2000-12-07
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI , YAGI TETSUYA
IPC分类号： H01S5/40 , H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device that can inhibit variation in the luminous point intervals of a plurality of semiconductor laser elements. SOLUTION: A 780 mm-LD 100 and a red LD 150 are formed. After that, contact layers 111 and 157 on each LD surface are directly bonded, thus allowing the luminous point intervals to approach within 10 nm. Additionally, the variation in the luminous point intervals depends only on the variation in the film thickness of a layer formed by the epitaxial growth, thus reducing the variation in the luminous point intervals.

12. 发明专利

JPH0992882A LIGHT EMITTING SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 失效
公开(公告)号：JPH0992882A
公开(公告)日：1997-04-04
申请号：JP24561195
申请日：1995-09-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI , HAYAFUJI AKIO , MARUKUSU DEIITOHARUDO
IPC分类号： H01L33/00 , H01L33/12 , H01L33/14 , H01L33/32 , H01L33/34 , H01S5/00 , H01S5/02 , H01S5/042 , H01S5/323 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To provide a light emitting semiconductor device wherein GaN compound semiconductor layers are grown over an Si substrate obtained at a reasonable cost, having high crystallinity and capable of having a large area and reduced resistance, and a manufacturing method thereof. SOLUTION: A buffer layer 2 made of amorphous or polycrystalline Si or SiC is formed on an Si substrate 1. A plurality of GaN compound semiconductor layers 3 to 5 of a multilayer structure wherein a light emitting region 4 is provided, are formed on the buffer layer 2.

13. 发明专利

JPH04315423A BOAT FOR LIQUID PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH04315423A
公开(公告)日：1992-11-06
申请号：JP10887691
申请日：1991-04-12
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI
IPC分类号： C30B19/06 , H01L21/208
摘要： PURPOSE:To get a boat for liquid phase epitaxial growth which epitaxially grows two or more crystal layers on a substrate, where the evaluation of the crystal composition of each layer can be performed easily. CONSTITUTION:In an object where crystals at the first layer and crystals at the second layer, larger in band gap than the crystals in the first layer, are grown in order on the growth board 5 on a lower board 1, a well 8 for a monitor board 7 is provided further on the lower board 1, and a well 10 for the melt at the first layer is made in such size that the melt 3 at the first layer contacts with only the growth board 5, and a well 11 for the melt at the second layer is made in such size that the melt at the second layer can cover a well 6 for the growth board and a well 8 for the monitor board at the same time. Hereby, crystals at the first layer and the second layer can be grown on the gorwth board, and only the crystals at the second layer is grown on the board 7 for monitoring.

14. 发明专利

JP2002185077A SEMICONDUCTOR LASER AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2002185077A
公开(公告)日：2002-06-28
申请号：JP2000380050
申请日：2000-12-14
申请人： MITSUBISHI ELECTRIC CORP
发明人： TASHIRO SHIGEHISA , KAWATSU YOSHIHEI , NISHIGUCHI HARUMI , YAGI TETSUYA , SHIMA AKIHIRO
IPC分类号： H01S5/30 , H01S5/16
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser that is less in variation, with respect to COD deterioration and is high in reliability. SOLUTION: In the semiconductor laser 10 having an oscillation wavelength of 770-810 nm, a disordered area is formed as a window layer 20, by introducing an impurity to an MQW active layer 16 in the vicinity of the end face of the laser 10. The window layer 20 is irradiated with exciting light, and the wavelength λdpl (nm) of the photoluminescence light of the layer 20 is measured. The COD level of a product is predicted in a middle stage of a process, based on degree of a blue shift λbl which is the difference between the wavelength λapl (nm) of the photoluminescence light generated, when the active layer 16 is irradiated with the exciting light and the wavelength λdpl (nm) of the photoluminscence light generated with the window layer 20 is irradiated with the exciting light.

15. 发明专利

JP2000068340A TEST PATTERN 失效
公开(公告)号：JP2000068340A
公开(公告)日：2000-03-03
申请号：JP23706398
申请日：1998-08-24
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI , NAKAYAMA TAKESHI , MARCUS DIETHEARD
IPC分类号： H01L21/66
摘要： PROBLEM TO BE SOLVED: To provide a pattern whose cross section form is uniform by selectively growing epitaxial crystal in two line forms whose cross section forms are substantially equal in two equivalent axial directions which are mutually orthogonal. SOLUTION: Since a Y-direction where a vertical semiconductor layer 1a extends, namely, a direction rotated counter clockwise from the direction of by 15 degrees and a direction where a lateral semiconductor layer 1b extends, namely an X-direction are crystallographically equivalent growth rate in the X-direction of a GaN epitaxial layer 3 and growth rate in the Y- direction are equal. Thus, the vertical semiconductor layer 1a and the lateral semiconductor layer 1b form a cross-type test pattern whose cross section form is uniform by selectively growing a face equivalent to the face (0001) of a high resistance epitaxial layer stacked on a sapphire substrate. Thus, the epitaxial crystal layer can precisely and electrically be measured by using the test pattern.

16. 发明专利

JPH10321956A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH10321956A
公开(公告)日：1998-12-04
申请号：JP12560897
申请日：1997-05-15
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI , NAKAYAMA TAKESHI
IPC分类号： H01L33/12 , H01L33/32 , H01L33/38 , H01S5/00 , H01S5/323 , H01S3/18 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To prevent the reduction of the life of a device caused by the generation of heat and make it possible to allow current to flow in the direction vertical to the surface of a water, by forming a gallium nitride chemical semiconductor layer on metal. SOLUTION: On a high melting point metal substrate 1 made of metal having a melting point of 1300 deg.C or above such as tungsten, platinum and chrome, polycrystalline or amorphous conductive AlGaN low temperature buffer layer 2 is formed by the metal organic vapor phase growth method. Then, an n-type GaN contact layer 3 is formed on the buffer layer 2. After that, an n-type AlGaN clad layer 4 is formed on the n-type contact layer 3, and an InGaN active layer 5 is formed on the n-type clad layer 4. Furthermore, a p-type AlGaN clad layer 6 is formed on the active layer 5, a p-type GaN contact layer 7 is formed on the p-type clad layer 6, and finally a p-type electrode 12 is formed on the p-type contact layer 7.

17. 发明专利

JPH08307001A SEMICONDUCTOR LASER DIODE AND METHOD OF MANUFACTURE 失效
公开(公告)号：JPH08307001A
公开(公告)日：1996-11-22
申请号：JP10576395
申请日：1995-04-28
申请人： MITSUBISHI ELECTRIC CORP
发明人： HAYAFUJI AKIO , KAWATSU YOSHIHEI
IPC分类号： H01S5/00 , H01L27/15 , H01S5/02 , H01S5/026 , H01S5/183 , H01S5/323 , H01S3/18
摘要： PURPOSE: To provide a high performance laser diode that emits the light of short wavelength of ultraviolet to green and to provide a method of manufacturing it. CONSTITUTION: An n type GaN contact layer 5 is formed on a sapphire substrate 1, and an n type AlGaN clad layer 7, a GaN active layer 8 without doping, a p type AlGaN clad layer 9, a p type GaN contact layer 10 and a p type semiconductor reflecting mirror 11 are laminated on the n type GaN contact layer 5 to form an epitaxial layer. The back surface of the sapphire substrate 1 and the surface of the n type contact layer 5 are constituted on the same continuous plane and an electrode 17 that is connected to the n type contact layer 5 is formed on the same plane.

18. 发明专利

JP2000101195A MANUFACTURE AND STRUCTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000101195A
公开(公告)日：2000-04-07
申请号：JP26799798
申请日：1998-09-22
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI , NAKAYAMA TAKESHI
IPC分类号： H01L21/301 , H01S5/00 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for easily cutting a substrate and for cleaving a semiconductor layer in a semiconductor device, that is made of gallium nitride semiconductor layer which is formed on a hexagonal system substrate such as a sapphire substrate. SOLUTION: When a semiconductor element made of a nitride semiconductor layer is to be formed on such hexagonal system substrate as a sapphire substrate 1 and to be divided into each semiconductor element, a nitride metal thin film 1 is provided on the reverse side of the sapphire substrate 1, thus easily cutting the sapphire substrate 1 into an arbitrary direction. The cutting direction of the substrate is selected for the cleavage direction of the semiconductor layer which is formed on the sapphire substrate 1.

19. 发明专利

JP2000068593A SEMICONDUCTOR LASER DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JP2000068593A
公开(公告)日：2000-03-03
申请号：JP23869598
申请日：1998-08-25
申请人： MITSUBISHI ELECTRIC CORP
发明人： NAKAYAMA TAKESHI , KAWATSU YOSHIHEI , MARCUS DIETHEARD
IPC分类号： H01S5/00 , H01S5/30 , H01S5/323 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To avoid damage during ridge stripe formation by covering a first semiconductor lamination layer which is laminated in a ridge stripe and provid ing a high electric resistance layer with a stripe opening in an upper edge face thereof. SOLUTION: For example, a first semiconductor lamination layer is formed selectively on a mask pattern opening 21 formed on a semiconductor substrate 1 and is laminated in a ridge stripe. Then, a first semiconductor lamination layer is covered and a first high electric resistance layer 7 with a stripe opening 22 in an upper edge face thereof is formed. A second semiconductor lamination layer is selectively formed on the opening part 22 of the high electric resistance layer 7. In the process, AlxInyGa1-x-yN: (0

20. 发明专利

JPH08301691A LIQUID-PHASE EPITAXIAL GROWTH DEVICE AND LIQUID-PHASE EPITAXIAL GROWTH 失效
公开(公告)号：JPH08301691A
公开(公告)日：1996-11-19
申请号：JP10951195
申请日：1995-05-08
申请人： MITSUBISHI ELECTRIC CORP
发明人： KAWATSU YOSHIHEI
IPC分类号： C30B19/06 , C30B29/46 , C30B29/48 , H01L21/208
摘要： PURPOSE: To provide a liquid-phase epitaxial growth device capable of reducing an area of a growing substrate to be cut down and lessening reduction in an effectiv use area. CONSTITUTION: A first rectangular well 4 along the external shape of a substrate for growing 3 is provided in a recessed way on a lower boat 1 so as to be inclined with respect to the sliding direction 10 of an upper boat 2. A second rectangular well 5 is arranged in the sliding direction 10 of the upper boat 2 and the rectangular substrate for growing 3 is arranged slantingly from a plane shape of the second rectangular well 5.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式