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11. 发明专利

JPS5220768A MANUFACTURING METHOD OF SEMIICONDUCTOR UNIT 失效
公开(公告)号：JPS5220768A
公开(公告)日：1977-02-16
申请号：JP9687375
申请日：1975-08-09
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI , HOSOI TAMIKAZU , HIRAKAWA KENJI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/72
摘要： PURPOSE:Increase of the current amplification rate by increasing the diffusion length of the central part of the emitter by making the central part of the base thinner than the peripheral part.

12. 发明专利

JPS51135476A MANUFACTURING METHOD OF TRANSISTORS 失效
公开(公告)号：JPS51135476A
公开(公告)日：1976-11-24
申请号：JP6072175
申请日：1975-05-20
申请人： MATSUSHITA ELECTRONICS CORP
发明人： HOSOI TAMIKAZU , ITOU KOUJI
IPC分类号： H01L29/73 , H01L21/265 , H01L21/331 , H01L29/08
摘要： PURPOSE:Manufacturing method of transistors with a high current amplification which enables broadening the opposable area of a collector region and an emitter region and forming a large area of base electrodes.

13. 发明专利

JPS51118379A TRANSISTOR 失效
公开(公告)号：JPS51118379A
公开(公告)日：1976-10-18
申请号：JP4397875
申请日：1975-04-10
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI
IPC分类号： H01L29/73 , H01L21/331 , H01L29/08 , H01L29/72
摘要： PURPOSE:To increase current amplitude by making the thickness of base area thicker at the peripheral section than at the center section to decrease concentrated collector current.

14. 发明专利

JPS60193234A Displaying discharge tube 失效
标题翻译：显示排放管
公开(公告)号：JPS60193234A
公开(公告)日：1985-10-01
申请号：JP4964384
申请日：1984-03-15
申请人： Matsushita Electronics Corp
发明人： ATSUMI TAMINORI , NAKAGAWA YOSHIO , OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： H01J17/49
CPC分类号： H01J17/492
摘要： PURPOSE:To obtain a large look-through angle for a displaying tube even the electrode disposition density is made high by covering two sides of an insulating layer having a triangle or semicircular cross section with a cathod and arranging it parallel to the direction transverse to an anode. CONSTITUTION:A plurality of slender cathodes 7a, 7b... disposed parallel to a direction, are fitted to a front plate 2 along its inner surface through insulating layers 8a, 8b... respectively and a plurality of slender anodes 9a, 9b... disposed parallel with each other and transverse to the direction of the cathodes are beltlikely formed on the inner surface of a rear plate 1. The insulating layers 8a, 8b... have nearly a triangle cross section and their two inclined surfaces are covered with the cathodes 7a, 7b... respectively. The cathodes 7a, 7b... of a displaying the constituted in the manner as above are placed on the inner surface of the front plate 2 for looking therethrough and their two sides are inclined to a V-shape, so that the two sides produce cathod glow in the region shown by broken lines to allow to look through the front plate 2 in a wide view angle.
摘要翻译：目的：即使通过用阴极覆盖具有三角形或半圆形截面的绝缘层的两侧将电极配置密度设置为高，从而使得显示管获得较大的视角，并将其平行于横向于阳极。构成：平行于方向设置的多个细长阴极7a，7b ...分别通过绝缘层8a，8b ...和多个细长的阳极9a，9b沿其内表面装配到前板2。在背板1的内表面上彼此平行并横向于阴极的方向被带状地形成。绝缘层8a，8b具有几乎三角形的横截面并且它们的两个倾斜表面被覆盖分别与阴极7a，7b ...连接。以上述方式构成的显示器的阴极7a，7b ...被放置在前板2的内表面上，用于透视，并且它们的两侧倾斜成V形，从而双面产生在由虚线示出的区域中的阴极发光，以允许以宽视角观察前板2。

15. 发明专利

JPS6090388A DISCHARGE TUBE DRIVER FOR DISPLAY 失效
公开(公告)号：JPS6090388A
公开(公告)日：1985-05-21
申请号：JP19854383
申请日：1983-10-24
申请人： MATSUSHITA ELECTRONICS CORP
发明人： OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： G09G3/282

16. 发明专利

JPS5674964A TRANSISTOR 失效
公开(公告)号：JPS5674964A
公开(公告)日：1981-06-20
申请号：JP15230779
申请日：1979-11-24
申请人： MATSUSHITA ELECTRONICS CORP
发明人： KUWAGATA MASAHIRO , ITOU KOUJI , HATSUTORI HIROTSUGU
IPC分类号： H01L29/73 , H01L21/331 , H01L29/72
摘要： PURPOSE:To increase a diffusion potential difference in the neighborhood of an emitter base bonded surface so that the surfacial current density is reduced by forming a thin single conductive-type high impurity concentration area encircling an emitter area on the surfacial surrounding of an opposite conductive-type emitter area provided inside a single conductive-type base area. CONSTITUTION:Inside a N type silicon substrate 1 which serves as a collector area, a P type base area 3 is diffused and formed, causing collector base bonding 5. At the same time, a N type emitter area 4 is provided inside the area 3 to constitute an emitter base bonding 6. In this way, a planer-type transistor is provided. Further, it is located near the surface of the area 4, so that the area 4 is encircled. After this process, a thin P type high impurity concentration area 9 across the areas 4, 3 is added. Next, SiO2 film 2 is attached on the entire surface of the transistor with an opening provided. Electrodes 7, 8 are installed on the areas 3, 4 respectively. In this way, the effective impurity concentration differential between the areas 3, 4 is minimized, so that the current amplification factor and the noise characteristic may be improved.

17. 发明专利

JPS5350682A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5350682A
公开(公告)日：1978-05-09
申请号：JP12577876
申请日：1976-10-19
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI
IPC分类号： H01L21/8222 , H01L21/331 , H01L21/8248 , H01L21/8249 , H01L27/06 , H01L29/08 , H01L29/68 , H01L29/73 , H01L29/80
摘要： PURPOSE:To obtain a device of large input impedance and mutual conductance without increasing the area of the semiconductor device.

18. 发明专利

JPS5345979A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5345979A
公开(公告)日：1978-04-25
申请号：JP12052276
申请日：1976-10-06
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI
IPC分类号： H01L29/80 , H01L21/331 , H01L21/337 , H01L21/8234 , H01L27/07 , H01L27/088 , H01L27/095 , H01L29/73 , H01L29/78 , H01L29/808 , H01L29/861
摘要： PURPOSE:To manufacture the highly-integrated device by making its mutual conductance large without expanding the area of the gate concerning with the electric capacity of the gate and source of the drain.

19. 发明专利

JPS5222886A SEMICONDUCTOR UNIT MANUFACTURING SYSTEM 失效
公开(公告)号：JPS5222886A
公开(公告)日：1977-02-21
申请号：JP9923175
申请日：1975-08-14
申请人： MATSUSHITA ELECTRONICS CORP
发明人： ITOU KOUJI , HOSOI TAMIKAZU , HIRAKAWA KENJI
IPC分类号： H01L29/73 , H01L21/22 , H01L21/331 , H01L29/08
摘要： PURPOSE:A manufacturing system of a bipolar transistor which has larger current amplitude beta by reducing a base current.

20. 发明专利

JPS6024589A DISCHARGE TUBE DRIVER FOR DISPLAY 失效
公开(公告)号：JPS6024589A
公开(公告)日：1985-02-07
申请号：JP13317383
申请日：1983-07-20
申请人： MATSUSHITA ELECTRONICS CORP
发明人： OKAMOTO TAKIO , ITOU KOUJI
IPC分类号： G09G3/282 , G09G3/10

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