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11. 发明专利

JP2013095655A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095655A
公开(公告)日：2013-05-20
申请号：JP2011242891
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： HATAKE HIDEO , TAO KOKI , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/08 , C23C14/34 , H01L21/363
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/658 , C04B2235/661 , C04B2235/767 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact including jointly high conductivity and high relative density, capable of forming an oxide semiconductor film having high carrier mobility, while suppressing abnormal discharge.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase is the main phase, each crystal phase of InOand ZnO is included, the relative density is ≥85%, and the specific resistance is ≤0.1 Ωcm.
摘要翻译：要解决的问题：为了提供一种用于生产显示装置用氧化物半导体膜的氧化物烧结体，所述氧化物烧结体包含共同的高导电性和高相对密度，能够形成具有高的氧化物半导体膜载流子迁移，同时抑制异常放电。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5至7的整数）相为主相，In 2 O 3 ，包含ZnO，相对密度≥85％，电阻率≤0.1Ωcm。版权所有（C）2013，JPO＆INPIT

12. 发明专利

JP2012158512A Oxide sintered body and sputtering target 审中-公开
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：JP2012158512A
公开(公告)日：2012-08-23
申请号：JP2012003566
申请日：2012-01-11
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： NANBU AKIRA , IWASAKI YUKI , GOTO YASUSHI
IPC分类号： C04B35/453 , C23C14/34
CPC分类号： C23C14/086 , C04B35/453 , C04B35/457 , C04B35/6455 , C04B2235/3217 , C04B2235/3222 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/76 , C04B2235/77 , C04B2235/80 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered body which can be suitably used for producing an oxide semiconductor film for display, the oxide sintered body having high conductivity and high relative density and formable of an oxide semiconductor film having high carrier mobility.SOLUTION: The oxide sintered body is obtained by mixing and sintering powders of zinc oxide, tin oxide and indium oxide. When X-ray diffractometry is conducted, the oxide sintered body has a ZnSnOphase as a main phase and a ZnSnInOphase (X, Y and m being an integer) which is a bixbyite type crystalline structure. When the contents (atom%) of the metal elements contained in the oxide sintered body are each [Zn], [Sn] and [In], the ratio of [In] to [Zn]+[Sn]+[In], the ratio of [Zn] to [Zn]+[Sn] and the ratio of [Sn] to [Zn]+[Sn] are represented by the following equations respectively: [In]/([Zn]+[Sn]+[In])=0.01 to less than 0.25, [Zn]/([Zn]+[Sn])=0.50 to 0.80, and [Sn]/([Zn]+[Sn])=0.20 to 0.50.
摘要翻译：要解决的问题：为了提供可适用于制造用于显示的氧化物半导体膜的氧化物烧结体，具有高导电性和高相对密度并且可形成具有高载流子迁移率的氧化物半导体膜的氧化物烧结体。解决方案：氧化物烧结体通过混合和烧结氧化锌，氧化锡和氧化铟的粉末而获得。当进行X射线衍射时，氧化物烧结体具有作为主相的Zn 2 相，Zn X 在 Y 中 < m X相，（X，Y和m为整数），为双晶型晶体结构。当包含在氧化物烧结体中的金属元素的含量（原子％）分别为[Zn]，[Sn]和[In]时，[In]与[Zn] + [Sn] + [In]的比例， [Zn] + [Zn] + [Sn]的比例和[Sn]与[Zn] + [Sn]的比率分别由下式表示：[In] /（[Zn] + [Sn] [In]）= 0.01〜小于0.25，[Zn] /（[Zn] + [Sn]）= 0.50〜0.80，[Sn] /（[Zn] + [Sn]）= 0.20〜0.50。版权所有（C）2012，JPO＆INPIT

13. 发明专利

JP2012180247A Sintered oxide and sputtering target 审中-公开
标题翻译：烧结氧化物和溅射目标
公开(公告)号：JP2012180247A
公开(公告)日：2012-09-20
申请号：JP2011045267
申请日：2011-03-02
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： GOTO YASUSHI , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/34 , H01L21/363
CPC分类号： C23C14/3407 , C04B35/453 , C04B35/457 , C04B2235/3217 , C04B2235/3244 , C04B2235/3251 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3418 , C04B2235/963 , C23C14/3414 , H01L21/02554 , H01L21/02565 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provided a sintered oxide and a sputtering target which are suitable for use in forming an oxide semiconductor film for a display device and have both high electroconductivity and high relative density and by which it is possible to form an oxide semiconductor film having high carrier mobility, and which, in particular, hardly generate nodules and have excellent direct-current discharge stability which renders long-term stable discharge possible even if used in production by a direct-current sputtering method.SOLUTION: The sintered oxide is obtained by mixing a zinc oxide, a tin oxide, and an oxide of at least one metal (metal M) selected from a group composed of Al, Hf, Ni, Si, Ga, In, and Ta and sintering the mixture, the sintered oxide having a Vickers hardness of 400 Hv or higher.
摘要翻译：要解决的问题：提供一种烧结氧化物和溅射靶，其适用于形成用于显示装置的氧化物半导体膜，并且具有高导电性和高相对密度，并且可以形成具有高载流子迁移率的氧化物半导体膜，特别是几乎不产生结节并且具有优异的直流放电稳定性，这使得即使在通过直流溅射法的制备中使用也可以长期稳定地放电。解决方案：烧结氧化物通过将氧化锌，氧化锡和至少一种选自Al，Hf，Ni，Si，Ga，In的金属（金属M）的氧化物混合而获得，和Ta烧结混合物，所述烧结氧化物的维氏硬度为400Hv或更高。版权所有（C）2012，JPO＆INPIT

14. 发明专利

JP2012144410A Oxide sintered compact, and sputtering target 审中-公开
标题翻译：氧化物烧结紧凑和喷射目标
公开(公告)号：JP2012144410A
公开(公告)日：2012-08-02
申请号：JP2011005978
申请日：2011-01-14
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： GOTO YASUSHI , IWASAKI YUKI
IPC分类号： C04B35/00 , C04B35/453 , C23C14/34
CPC分类号： C04B35/453 , C04B35/01 , C04B2235/3244 , C04B2235/3279 , C04B2235/3284 , C04B2235/3286 , C04B2235/3418 , C04B2235/3427 , C04B2235/656 , C04B2235/6567 , C04B2235/77 , C04B2235/80 , C23C14/08 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact which is used appropriately for producing an oxide semiconductor film for a display; and a sputtering target having both high conductivity and high relative density.SOLUTION: The oxide sintered compact is obtained by mixing and sintering indium oxide powder, gallium oxide powder, zinc oxide powder, and the powder of at least one kind of metal (metal M) selected from the group consisting of Si, Ni and Hf. When the oxide sintered compact is subjected to X-ray diffraction, (1) InGaZnOis made a main phase, and at least part of the metal M is solid-dissolved in the InGaZnO, and (2) a ZnMOphase and an MOphase (x and y are an optional integer) are not detected.
摘要翻译：要解决的问题：提供一种用于制造用于显示器的氧化物半导体膜的氧化物烧结体; 以及具有高导电性和高相对密度的溅射靶。解决方案：氧化物烧结体通过将氧化铟粉末，氧化镓粉末，氧化锌粉末和选自Si，Ni中的至少一种金属（金属M）的粉末进行混合和烧结而获得和Hf。当氧化物烧结体进行X射线衍射时，（1）将InGaZnO 4 制成主相，至少部分金属M固溶于 InGaZnO 4 ，和（2）ZnM x O y 没有检测到相位（x和y是可选整数）的M x O y 。版权所有（C）2012，JPO＆INPIT

15. 发明专利

JP2011162828A Al-BASED ALLOY SPUTTERING TARGET, AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：基于Al的合金溅射靶，以及其制造方法
公开(公告)号：JP2011162828A
公开(公告)日：2011-08-25
申请号：JP2010025924
申请日：2010-02-08
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： TAKAGI TOSHIAKI , MATSUMOTO KATSUSHI , IWASAKI YUKI
IPC分类号： C23C14/34 , C22C21/00 , C22C21/12 , C22F1/00 , C22F1/04 , C22F1/057
摘要： PROBLEM TO BE SOLVED: To provide a Cu-containing, Al-based alloy sputtering target which is favorable for forming a metal wiring thin film having excellent low wiring resistance and hillock resistance, and capable of suppressing occurrence of splash during the sputtering, and a method for manufacturing the same. SOLUTION: The Al-based alloy sputtering target contains 0.25-1.0 mass% Cu, and the balance Al with inevitable impurities. The average crystal grain size thereof is ≤100 μm, and the Vickers hardness thereof is ≥26Hv. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种有利于形成具有优异的低布线电阻和小丘电阻的金属布线薄膜并且能够抑制溅射期间飞溅的发生的含Cu的Al基合金溅射靶及其制造方法。解决方案：Al基合金溅射靶含有0.25-1.0质量％的Cu，余量为Al，不可避免的杂质。其平均晶粒尺寸≤100μm，维氏硬度≥26Hv。版权所有（C）2011，JPO＆INPIT

16. 发明专利

JP2013095657A Oxide sintered compact and sputtering target, and method for producing the same 有权
标题翻译：氧化物烧结的紧凑和溅射目标及其生产方法
公开(公告)号：JP2013095657A
公开(公告)日：2013-05-20
申请号：JP2011242893
申请日：2011-11-04
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： TAO KOKI , HATAKE HIDEO , KANAMARU MORIYOSHI , NANBU AKIRA , IWASAKI YUKI
IPC分类号： C04B35/453 , C23C14/34
CPC分类号： C04B35/453 , C04B35/645 , C04B2235/3206 , C04B2235/3217 , C04B2235/3232 , C04B2235/3251 , C04B2235/3284 , C04B2235/3286 , C04B2235/767 , C04B2235/77 , C04B2235/782 , C04B2235/786 , C04B2235/80 , C23C14/08 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, the oxide sintered compact being capable of stable film formation by a sputtering method, while suppressing abnormal discharge in formation of the oxide semiconductor film having high carrier mobility.SOLUTION: This oxide sintered compact is obtained by mixing and sintering zinc oxide, indium oxide, and an oxide of at least one kind of metal selected from a group consisting of Ti, Mg, Al and Nb. When the oxide sintered compact is subjected to X-ray diffraction, ZnInO(where m is an integer from 5 to 7) phase is the main phase, the ratio of crystal grains having an average particle size of ≤10 μm and a particle size of ≥30 μm is ≤15%, and the relative density is ≥85%.
摘要翻译：待解决的问题：为了提供适合用于生产显示装置用氧化物半导体膜的氧化物烧结体，所述氧化物烧结体能够通过溅射法成膜稳定，同时抑制形成中的异常放电氧化物半导体膜具有高载流子迁移率。解决方案：该氧化物烧结体通过混合和烧结氧化锌，氧化铟和选自由Ti，Mg，Al和Nb组成的组中的至少一种金属的氧化物而获得。当氧化物烧结体进行X射线衍射时，在 2 O 3 + m （其中m为5〜7的整数）相为主相，平均粒径≤10μm，粒径≥30μm的晶粒的比例为≤15％，相对密度≥85％。版权所有（C）2013，JPO＆INPIT

17. 发明专利

JP2012180265A Oxide sintered compact and sputtering target 有权
标题翻译：氧化物烧结紧凑和溅射目标
公开(公告)号：JP2012180265A
公开(公告)日：2012-09-20
申请号：JP2012025477
申请日：2012-02-08
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： KANAMARU MORIYOSHI , IWASAKI YUKI , MATSUI MINORU , GOTO YASUSHI , NANBU AKIRA
IPC分类号： C04B35/453 , C04B35/457 , C23C14/34 , H01B1/08 , H01B13/00
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/453 , C04B35/457 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C23C14/086
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, which is an oxide sintered compact having jointly high conductivity and high relative density, capable of forming the oxide semiconductor film having high carrier mobility, and also having extremely excellent in-plane uniformity.SOLUTION: In this oxide sintered compact obtained by mixing and sintering each powder of zinc oxide, tin oxide and indium oxide, when the oxide sintered compact is subjected to X-ray diffraction, assuming that intensity of XRD peak near 2θ=34° is A, intensity of XRD peak near 2θ=31° is B, intensity of XRD peak near 2θ=35° is C, and intensity of XRD peak near 2θ=26.5° is D, following formula (1) is satisfied: [A/(A+B+C+D)]×100≥70 (1).
摘要翻译：解决问题的方案为了提供一种氧化物烧结体，其适用于制造具有共同导电性和高相对密度的氧化物烧结体的显示装置用氧化物半导体膜，能够形成氧化物半导体膜具有高载流子迁移率，并且还具有非常优异的面内均匀性。解决方案：在通过混合和烧结氧化锌，氧化锡和氧化铟的各种粉末获得的氧化物烧结体中，当氧化物烧结体经受X射线衍射时，假定XRD峰强度在2θ= 34附近 °为A，2θ= 31°附近的XRD峰强度为B，2θ= 35°附近的XRD峰强度为C，2θ= 26.5°附近的XRD峰强度为D，满足公式（1）： A /（A + B + C + D）]×100≥70（1）。版权所有（C）2012，JPO＆INPIT

18. 发明专利

JP2012121791A Oxide sintered body and sputtering target 有权
标题翻译：氧化物烧结体和溅射目标
公开(公告)号：JP2012121791A
公开(公告)日：2012-06-28
申请号：JP2011246824
申请日：2011-11-10
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： GOTO YASUSHI , IWASAKI YUKI , TOKUHIRA MASAYA , YONEDA YOICHIRO
IPC分类号： C04B35/453 , C23C14/34
CPC分类号： H01B1/08 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B35/62695 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/6567 , C04B2235/6585 , C04B2235/77 , C04B2235/80 , C23C14/086 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered body which is suitably used in the production of an oxide semiconductor film for a display device, the sintered body concerned having both high conductivity and high relative density and forming an oxide semiconductor film which has high carrier mobility.SOLUTION: The oxide sintered body is obtained by mixing powdered zinc oxide, powdered tin oxide and powdered indium oxide together and then sintering the mixture. In addition, when the sintered body of an oxide is subjected to X-ray diffraction, it has a phase of ZnSnOas a primary phase and a solid solution of In/InO-ZnSnOin which In and/or InOis solid-solved in ZnSnO, and a phase of ZnInO(x, y and z are optional positive integers) is not detected.
摘要翻译：解决的问题：为了提供适合用于生产显示装置用氧化物半导体膜的氧化物烧结体，所述烧结体具有高导电性和高相对密度，并形成氧化物半导体膜，所述氧化物半导体膜具有高载流子迁移率。解决方案：氧化物烧结体通过将氧化锌粉末，氧化锡粉末和氧化铟粉末混合在一起，然后烧结混合物而获得。此外，当氧化物的烧结体进行X射线衍射时，其相位为Zn 2 SnO 4 作为主阶段和In / In 2 O 3 -ZnSnO 的固溶体 3 其中In和/或In 2 O 3 在ZnSnO 3 ，并且在 y O 中的Zn x < 没有检测到z （x，y和z是可选的正整数）。版权所有（C）2012，JPO＆INPIT

19. 发明专利

JP2010242215A Aluminum alloy sheet having excellent ridging mark property upon forming 有权
标题翻译：具有卓越的标志性能的铝合金板
公开(公告)号：JP2010242215A
公开(公告)日：2010-10-28
申请号：JP2010015717
申请日：2010-01-27
申请人： Kobe Steel Ltd , 株式会社神戸製鋼所
发明人： MATSUMOTO KATSUSHI , IWASAKI YUKI
IPC分类号： C22C21/06 , C22C21/02 , C22F1/00 , C22F1/05
摘要： PROBLEM TO BE SOLVED: To provide an Al-Mg-Si-based aluminum alloy sheet, wherein ridging marks upon press forming can be prevented even in the case forming conditions are made more severe.
SOLUTION: In the Al-Mg-Si-based aluminum alloy sheet having a specified composition, regarding the texture in the sheet width direction relatively in a relatively wide range, three of Goss orientation, Cube orientation and rotation Cube orientation, particularly, are suppressed by the average area ratio in the sheet width direction, and further, respective deviations in the respective orientations in the texture are suppressed as well. Thus, the ridging marks having a cycle of relatively large sheet surface ruggedness in the sheet width direction are suppressed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种Al-Mg-Si系铝合金板，即使在成形条件变得更严格的情况下，也能够防止冲压成形时的凸起痕迹。解决方案：在具有特定组成的Al-Mg-Si基铝合金板中，关于相对宽的范围内的板宽度方向上的织构，Goss取向，立方体取向和旋转立方体方向，特别是被片宽度方向上的平均面积比抑制，并且还抑制了纹理中的各取向的各个偏差。因此，抑制了片材宽度方向上的片材表面粗糙度较大的周期的皱纹。版权所有（C）2011，JPO＆INPIT

20. 发明专利

JP2012180263A Oxide sintered compact and sputtering target 有权
标题翻译：氧化物烧结紧凑和溅射目标
公开(公告)号：JP2012180263A
公开(公告)日：2012-09-20
申请号：JP2012025475
申请日：2012-02-08
申请人： Kobelco Kaken:Kk , 株式会社コベルコ科研
发明人： IWASAKI YUKI , GOTO YASUSHI , KANAMARU MORIYOSHI
IPC分类号： C04B35/453 , C04B35/457 , C23C14/34
CPC分类号： C23C14/086 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B35/645 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/604 , C04B2235/664 , C04B2235/77 , C23C14/3414
摘要： PROBLEM TO BE SOLVED: To provide an oxide sintered compact used suitably for production of an oxide semiconductor film for a display device, which is an oxide sintered compact having jointly high conductivity and high relative density, capable of forming the oxide semiconductor film having high carrier mobility.SOLUTION: In this oxide sintered compact obtained by mixing and sintering each powder of zinc oxide, tin oxide and indium oxide, when performing in-plane composition mapping by EPMA to the oxide sintered compact, the ratio of a region having an Sn concentration of 10-50 mass% occupied in the measured area is ≥70 area%.
摘要翻译：解决问题的方案为了提供一种氧化物烧结体，其适用于制造具有共同导电性和高相对密度的氧化物烧结体的显示装置用氧化物半导体膜，能够形成氧化物半导体膜具有高载流子迁移率。解决方案：在通过混合和烧结氧化锌，氧化锡和氧化铟的各种粉末而获得的氧化物烧结体中，当通过EPMA进行平面内组成测绘到氧化物烧结体时，具有Sn的区域的比例测量面积占10-50质量％的浓度为≥70面积％。版权所有（C）2012，JPO＆INPIT

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