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    • 13. 发明专利
    • PULSE TRANSMISSION CIRCUIT
    • JPH07264247A
    • 1995-10-13
    • JP7532194
    • 1994-03-22
    • HITACHI LTD
    • NODA TAKAAKI
    • H03K19/003H04L25/02
    • PURPOSE:To prevent deterioration in the performance and reliability by selecting a level of an output signal for an S/T interface LSI or the like including the pulse transmission circuit within the standard level CONSTITUTION:In an LSI mounted with the pulse transmission circuit PT including operational amplifiers acting as a voltage follower via a source follower circuit and a current limit MOSFET receiving a gate voltage GP1 at its gate and including a reference current generating circuit MCG forming a prescribed gate voltage and an internal power supply buffer VBB transmitting an internal voltage VB1 for setting a level of an output signal to a drive circuit PD as an internal voltage VC, a gate voltage buffer GPB is provided between an output terminal of the reference current generating circuit MCG and a gate of the current limit MOSFET and a feedback circuit comprising a CMOS inverter with a comparatively high threshold level and a prescribed capacitance means inverting and differentiating a change in the drain potential of the current limit MOSFET and giving the resulting change to the gate is provided between a drain and a gate of the current limit MOSFET.
    • 16. 发明专利
    • REFERENCE VOLTAGE GENERATION CIRCUIT
    • JPS62249212A
    • 1987-10-30
    • JP9204486
    • 1986-04-23
    • HITACHI LTD
    • NODA TAKAAKI
    • G05F3/24
    • PURPOSE:To obtain a voltage generation circuit having no oscillation, by performing a control to turn on a MOSFET having a low threshold voltage compulsorily, and to detect the voltage of the MOSFET having a high threshold voltage. CONSTITUTION:A start-up circuit 1 detects the voltage generated at a MOSFETQ6 whose threshold value is set higher than that of a MOSFETQ5, at a detection circuit 2, and operates the MOSFETs Q5 and Q6 to be turned on compulsorily at a power supply applying time based on the above result. In a constant current circuit 3, a current mirror circuit consisting of P- MOSFETs Q7 and Q8 is provided at a power source terminal Vdd side, and also, a ratio type CMOS inverter circuit consisting of a P-MOSFETQ9 and an N-MOSFETQ10 are coupled to limit a current flow on the MOSFETQ8 smaller, and it is constituted so that a current equivalent to the one permitting to flow on the MOSFETQ8 is permitted to flow on the MOSFETQ7.