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11. 发明专利

JPH0878336A REACTION TREATMENT APPARATUS 失效
公开(公告)号：JPH0878336A
公开(公告)日：1996-03-22
申请号：JP21543394
申请日：1994-09-09
申请人： HITACHI LTD
发明人： SAKAKI SHIGEO , SATO AKIHIKO
IPC分类号： H01L21/205
摘要： PURPOSE: To obtain a reaction treatment apparatus by which a uniform and homogeneous thin film is formed on the surface of a crystal substrate inside a reaction chamber by a method wherein raw-material gases are mixed uniformly inside a mixed-gas supply pipe which supplies a mixed gas into the reaction chamber. CONSTITUTION: A plurality of specific-gas supply pipes 9 which supply a specific gas are connected to a mixed-gas supply pipe 7 which supplies a plurality of raw-material gases in a mixed state to a reaction chamber 1 which houses a crystal substrate. In addition, a plurality of mixing plates 25 are arranged and installed at prescribed intervals inside the mixed-gas supply pipes close to the reaction chamber and the reaction chamber. A plurality of slits 26 are formed in the respective mixing plates, the extension direction of the slits is different between the adjacent mixing plates so as to mix the raw-material gases. In the specific-gas supply pipes, a gas whose molecular weight is large is supplied on the upstream side, a gas whose molecular weight is small is supplied toward the downstream side, and the raw-material gases can be made uniform much more.

12. 发明专利

JPH06252247A TRANSFERRING METHOD OF SMALL ARTICLES 失效
公开(公告)号：JPH06252247A
公开(公告)日：1994-09-09
申请号：JP6104293
申请日：1993-02-25
申请人： HITACHI LTD
发明人： YAZAKI NORIHIRO , SATO AKIHIKO , OGURA TAKESHI
IPC分类号： H01L21/67 , H01L21/301 , H01L21/68 , H01L21/78
摘要： PURPOSE:To suitably detach small articles from a sticking sheet, and suitably transfer them to specified positions, in the case of transferring work. CONSTITUTION:A collet 10 which is stopped on a pellet 2 of a sticking sheet 3 ascends at a speed lower than the ascending speed of a needle, when the pellet is pushed up by the needle 7. The collet sucks by vacuum the pellet separated from the sheet. When the collet transfers the pellet to an accommodation tray 40, the pellet is once brought into contact with the mounting surface of the tray. The collet is made to ascend within the range smaller than or equal to the thickness of the pellet. In this state, air is blown out from the collet and the pellet is detached. Thereby the load applied to the pellet is reduced when the pellet is pushed up by the needle, so that damage of the pellet can be prevented. When the pellet is transferred to the accommodation tray, the pellet is surely detached and arranged in the accommodation tray while the collet and the mounting surface of the accommodation tray serve as guides.

13. 发明专利

JPH0146480B2 失效
公开(公告)号：JPH0146480B2
公开(公告)日：1989-10-09
申请号：JP206480
申请日：1980-01-14
申请人： HITACHI LTD
发明人： SATO AKIHIKO
IPC分类号： C30B19/06 , H01L21/02 , H01L21/208 , H01L21/22

14. 发明专利

JPS63109174A SHEET-FED CVD DEVICE 失效
公开(公告)号：JPS63109174A
公开(公告)日：1988-05-13
申请号：JP25167986
申请日：1986-10-24
申请人： HITACHI LTD
发明人： MIYAZAKI ISAO , YAMADA SEIICHI , SATO AKIHIKO , FUJITA MASAHIRO
IPC分类号： H01L21/31 , C23C16/54 , H01L21/205
摘要： PURPOSE:To reduce one cycle time and to prevent the deposition of foreign matter on a material to be treated by providing a preheating chamber and a cooling chamber before and behind a treating chamber, making each chamber hermetically sealable, and successively receiving and delivering the material to be treated. CONSTITUTION:A wafer 1 to be treated is supplied one by one from a carrier jig 24 to the turntable 18 in the preheating chamber 15, and heated by a heater 20 while being rotated. The door 3a of a feed port 3 is opened, the wafer 1 is transferred to the turntable 5 in the treating chamber 2 by a handler 21, and specified film formation is carried out. After film is formed, the door 4a of a discharge port 4 is opened, the wafer is transferred by a handler 31 to the turntable 28 in the cooling chamber 25 and naturally cooled, and the wafer is taken out by a carrier jig 34. The preheating, film forming, cooling, and handling are simultaneously and continuously carried out in this way. Moreover, since the preheating chamber 15 and the cooling chamber 25 are purged with gaseous nitrogen, film can be efficiently formed on the wafer 1 while keeping high cleanliness.

15. 发明专利

JPS6385268A VACUUM EXHAUSTING DEVICE 失效
公开(公告)号：JPS6385268A
公开(公告)日：1988-04-15
申请号：JP22602386
申请日：1986-09-26
申请人： HITACHI LTD , HITACHI TOKYO ELECTRONICS
发明人： SATO AKIHIKO , KUSAKA TADAO , TOMIYAMA SHIGEO , AOKI KOJI , OSAKABE ICHIRO
IPC分类号： H01L21/302 , F04B37/16 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To permit the exhaust even for the gas consisting of the molecules having a small molecular weight by installing an oil-free vacuum pump as vacuum exhausting device and connecting a suppy source of the gas consisting of the molecules having a large molecular weight to the intake side of the oil-free vacuum pump. CONSTITUTION:The cpationed vacuum exhaust device 13 which is suitable for exhausting the inside of a process tube 1 in the decompression CVD device of a semiconductor manufacturing apparatus and generating vacuum state is equipped with an oil-free vacuum pump 14 which uses a motor 14A whose revolution speed is controlled through an inverter 14B, as driving source. Further, the device 13 is equipped with turbomolecular pump 15 connected to the intake side of the pump 14 and a supply source 16 for the gas (argon gas) consisting of the molecules having a large molecular weight. The oil-free vacuum pump 14 is equipped with a centrifugal compression pump stage 23 on an intake port side and a circumferential flow compression pump stage 24 on an exhaust port side, and the revolution body of the centrifugal compression pump stage 23 consists of an open vane wheel 23A.

16. 发明专利

JPS634615A APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS634615A
公开(公告)日：1988-01-09
申请号：JP14696886
申请日：1986-06-25
申请人： HITACHI TOKYO ELECTRONICS , HITACHI LTD
发明人： HARA SHIGEO , SATO AKIHIKO , TOMIYAMA SHIGEO
IPC分类号： H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable a plasma CVD film to be formed on the principal face of a wafer so as to have a uniform thickness and homogeneity, by providing triple flow adjusting members for providing uniform flows of gas emitted radially from the central portions of electrode plates towards the periphery. CONSTITUTION:Within a chamber 1, three flow adjusting members 10 are arranged in the form of triple concentric circles so as to surround a pair of electrode plates 2. Each of these flow adjusting members 10 is cylindrical and has orifices 11 consisting of slits or the like on the peripheral face thereof. The distribution of these orifice 11 and their demensions are determined such that gas 6 flows radially and uniformly from the central portions of the electrode plates 2 towards the periphery. The flow adjusting members 10 serve as resistors against the flow of the gas 6 at respective locations and control the flow of the gas 6.

17. 发明专利

JPS6298617A PROCESSING DEVICE 失效
公开(公告)号：JPS6298617A
公开(公告)日：1987-05-08
申请号：JP23742585
申请日：1985-10-25
申请人： HITACHI TOKYO ELECTRONICS , HITACHI LTD
发明人： TOMIYAMA SHIGEO , MURAMATSU KIMIO , SATO AKIHIKO
IPC分类号： H01L21/22
摘要： PURPOSE:To allow the use of a soft landing type boat loader even under the condition in which an adhering phenomenon is generated by a reaction product by a method wherein the material to be treated is processed in a processing tube in the state wherein the material to be treated is supported by a fork. CONSTITUTION:The use of a soft landing type boat loader is made possible by performing a treatment on a wafer while a boat is being supported by a fork having a protrusion. To be more precise, the boat 7 is supported by the retaining part 15 of a fork 14, and the fork 14 becomes the material to which the boat 7 is adhered by the use of a reaction product, instead of a processing tube 1. Accordingly, as the scooping up operation of the adhered boat 7 by the fork 14, to be performed after a treatment has been performed on a wafer, is not required the trouble such as the bending of the fork 14 caused by the adhesion generated when the boat 7 is lifted up and the damage of the processing tube 1 and the like can be prevented.

18. 发明专利

JPS6129185A Manufacture of semiconductor element 失效
标题翻译：半导体元件的制造
公开(公告)号：JPS6129185A
公开(公告)日：1986-02-10
申请号：JP14953684
申请日：1984-07-20
申请人： Hitachi Ltd
发明人： HAYASHI SHOJI , SATO AKIHIKO
IPC分类号： H01L21/301 , H01S5/00 , H01S5/02
CPC分类号： H01S5/0202
摘要： PURPOSE: To scratch a light emitting end face by scribing slender chips in the state that the sides are not contacted.
CONSTITUTION: A flexible resin sheet 9 is extended in a Y direction in the state that slender chips 3 having light emitting unit end faces 2 at both sides are bonded onto the sheet 9 to set the state that the interval (d) of the adjacent chips 3, 3 is spaced at 0.1mm or longer. Then, the chip 3 is scratched at 10 by scribing only the portion at the center of a scribing area 4 of Y direction by a diamond cutter 5 to form a scratch 10. When this scratch 10 is triggered to crack the chip 3, the side 11 perpendicular to the light emitting end 2 is cleaved and divided, thereby obtaining a chip 6 having a light emitting end 7 including no scratch.
COPYRIGHT: (C)1986,JPO&Japio
摘要翻译：目的：通过在侧面不接触的状态下划片细长的芯片来划伤发光端面。构成：在具有发光单元端面2的两侧的细长的芯片3接合在片材9上的状态下，柔性树脂片材9沿Y方向延伸，以设定相邻片材的间隔（d）的状态 3,3间隔0.1mm。或更长。然后，通过金刚石切割器5仅在Y方向的划线区域4的中心部分划线，以10划伤芯片3，形成划痕10.当该划痕10被触发以破裂芯片3时，侧面切割并分割垂直于发光端2的11，从而获得具有不具有划痕的发光端7的芯片6。

19. 发明专利

JP2003086787A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD 审中-公开
公开(公告)号：JP2003086787A
公开(公告)日：2003-03-20
申请号：JP2001277940
申请日：2001-09-13
申请人： HITACHI LTD
发明人： EBARA GEN , FUJII YUJI , SATO AKIHIKO , IHAYAZAKA TAKASHI
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/336 , H01L29/41 , H01L29/78
摘要： PROBLEM TO BE SOLVED: To provide a technique for preventing a reverse-side electrode from peeling out of a semiconductor device which has the reverse-side electrode. SOLUTION: The manufacturing method for the semiconductor device has a 1st process of forming circuit elements in a plurality of semiconductor chip areas sectioned by a dicing area on one main surface of a semiconductor wafer; a 2nd process of grinding the circuit element forming surface (top surface) of the semiconductor wafer and the opposite-side surface (reverse surface); a 3rd process of further flattening them after the 2nd process; a 4th process of forming the reverse-surface electrode after the 3rd process; and a 5th process of cutting the wafer into individual semiconductor chips by dicing, electrically connecting external electrodes and leads of the semiconductor chips, and sealing the semiconductor chips, leads, and electric connection parts with resin. After the 3rd process, the reverse surface of the semiconductor wafer is roughened into an uneven rough surface, and the reverse-surface electrode is formed on the roughened reverse surface of the semiconductor wafer through the 4th process.

20. 发明专利

JP2003068674A Semiconductor device and production method therefor 审中-公开
标题翻译：半导体器件及其生产方法
公开(公告)号：JP2003068674A
公开(公告)日：2003-03-07
申请号：JP2001260721
申请日：2001-08-30
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： FUJII YUJI , SATO AKIHIKO , IHAYAZAKA TAKASHI , MARUYAMA YASUO , HATORI KAZUO
IPC分类号： H01L21/28
摘要： PROBLEM TO BE SOLVED: To reduce the process for gold foil spread (SPB) as a post-process in a production method for semiconductor device, a process for inspecting the presence/absence of an oxide film, and to provide a process for removing oxides, when the oxide is attached.
SOLUTION: In the semiconductor device, having an electrode on the surface (rear side) of a semiconductor wafer facing a circuit element forming surface (front side), the rear electrode is a multilayer electrode, with which an NiSi alloy layer, Ti or V layer, Ni layer, AuGe alloy layer and Au layer are successively laminated from the rear side of the semiconductor wafer.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：为了减少用于半导体器件的制造方法中的金箔扩散（SPB）作为后处理的工艺，检查氧化膜的存在/不存在的方法，以及提供除去氧化物的工艺当附着氧化物时。解决方案：在半导体器件中，在面向电路元件形成表面（正面）的半导体晶片的表面（后侧）上具有电极，后电极是多层电极，NiSi合金层Ti或V 层，Ni层，AuGe合金层和Au层从半导体晶片的后侧依次层叠。

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