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11. 发明专利

JPS5961163A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5961163A
公开(公告)日：1984-04-07
申请号：JP17124482
申请日：1982-09-30
申请人： Fujitsu Ltd
发明人： SASAKI NOBUO , KAWAMURA SEIICHIROU , OGAWA TSUTOMU
IPC分类号： H01L27/04 , H01L21/265 , H01L21/822 , H01L27/08
CPC分类号： H01L27/0802
摘要： PURPOSE:To form an integrated circuit, to change a resistance value and to prepare a program by ion implanting ion beams, a beam-spot thereof is diaphragmed to a small value, to a polycrystalline silicon resistor connected to a wiring and varying the resistance value of the resistor while being monitored. CONSTITUTION:Ions are implanted to the polycrystalline silicon resistor 2, which is formed on an oxide film 1 and connected to the wiring of the semiconductor device, while monitoring the resistance value of the polycrystalline silicon resistor 2, and the resistance value of the resistor is changed. That is, when the ions of a donor impurity are implanted to the p type section of the polysilicon resistor 2 from the upper section of a protective film 5 as shown in the arrow and the p type section is changed into an n type section, the conduction type of the polysilicon resistor 2 is turned into n nn and currents flow -that is, the resistance value is brought to the state of low resistance from high resistance. Accordingly, the conduction types of n pn , n nn , n in are changed generally into those of n nn , n n n , n nn in the polysilicon resistor 2-that is, the resistance value is varied to a low state from a high state, the resistance value is altered so that currents flow, and the program can be prepared.
摘要翻译：目的：为了形成集成电路，通过离子注入离子束来改变电阻值并制备程序，将其光束点隔膜到较小的值，连接到布线并改变电阻值的多晶硅电阻器的电阻器被监视。构成：在监测多晶硅电阻器2的电阻值的同时，将离子注入到形成在氧化物膜1上并连接到半导体器件的布线的多晶硅电阻器2，并且电阻器的电阻值为改变。也就是说，当如箭头所示将施主杂质的离子从保护膜5的上部注入到多晶硅电阻器2的p型部分并且p型部分变为n型部分时，多晶硅电阻器2的导通型变为n + nn +，电流流过，电阻值从高电阻变为低电阻状态。因此，n +中的n + pn +，n +，nn +，n +的导电类型通常变化为n + nn +，n < +> n + n + + n + nn +，即，电阻值从高电位变为低状态，电阻值变化，流程，程序可以准备。

12. 发明专利

JPS5880830A MANUFACTURE OF SUBSTRATE FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5880830A
公开(公告)日：1983-05-16
申请号：JP18023181
申请日：1981-11-10
申请人： FUJITSU LTD
发明人： KAWAMURA SEIICHIROU , KAMIOKA HAJIME , OGAWA TSUTOMU , SAKURAI JIYUNJI
IPC分类号： H01L21/20 , H01L21/263
摘要： PURPOSE:To allow the growth of crystals having the same orientation as a substrate, by forming angular holes of several mum at the center of regions thick in film thickness on an insulating film so as to reach the substrate and then depositing poly Si or amorphous Si in the angular holes. CONSTITUTION:At the center of regions thick in film thickness on the insulating film 2, 2-3mum angular holes 4 are formed down to the Si substrate 1 by using an etching technique. Next, when a poly Si layer 3 is grown on the insulating film 2, the poly Si is deposited also in the angular holes 4 and contacts the Si substrate 1 at the bottom of the angular hole 4. After such a growth of a poly Si layer, the same treatment as a conventional SOI technique is performed onto the surface of the poly Si layer 3. Thereafter, the poly Si fused in the angular hole 4 epitaxially grows along the orientation of the substrate 1 when cooled.

13. 发明专利

JPS5851542A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5851542A
公开(公告)日：1983-03-26
申请号：JP14995681
申请日：1981-09-22
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU
IPC分类号： H01L21/76 , H01L21/316
摘要： PURPOSE:To form an oxynitride film at the prescribed position with good controllability by selectively forming the first Si3N4 on an Si substrate, forming an SiO2 layer and the second Si3N4 layer to be partly superposed with the first layer and wet oxidizing the layers. CONSTITUTION:The first Si3N4 layer 13 is formed by a CVD method on an Si substrate 11 formed with a thermally oxidized film 12 on the surface. At this time, the end of the layer 13 is moved to the position to form a silicon oxynitride film. Then, an SiO2 layer 14 and the second Si3N4 layer 15 are covered by a CVD method, and are etched so that the superposed width L of the layers 13, 15 becomes the prescribed value. Thereafter, when it is wet oxidized with O2, H2O is invaded from the exposed end surface of the layer 14, chemical reaction is produced on the surface of the wall of the layer 14, thereby producing NH3, which is diffused to the surface of the substrate 11, thereby allowing a silicon oxynitride film 16 to be formed. The width W of the film 16 is decided by the thickness tox and the superposed width L of the layer 14.

14. 发明专利

JPS5723232A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS5723232A
公开(公告)日：1982-02-06
申请号：JP9839980
申请日：1980-07-18
申请人： Fujitsu Ltd
发明人： SATOU NORIAKI , OGAWA TSUTOMU , MATSUMOTO TAKASHI
IPC分类号： H01L21/265 , H01L21/324
CPC分类号： H01L21/324
摘要： PURPOSE:To simplify annealing of the reverse conductive layer of a semiconductor device by a method wherein ion implantation is performed selectively in a substrate through an insulating film to provide the reverse conductive layer, and an infrared laser beam is irradiated from the back of the substrate to heat the insulating film. CONSTITUTION:Ion implantation is performed on the P type Si substrate 1 through the gate oxide film 3 making a gate electrode 5 as a mask to form N type layers 6, 7. Then CO2 laser beam of 10.6mum wave length is irradiated from the back of the substrate 1 to heat the oxide film 3 through the substrate, and the adjoining N type layers 6, 7 are annealed by heat conduction. By this constitution, because the substrate is not heated on the whole, rediffusion of impurity in the N type layers 6, 7 is not generated, channel length in accordance with the design can be obtained easily, and annealing process can be simplified. After then it is covered with traditional PSG, and when an opening is formed and an electrode is provided, the device having favorable characteristic can be obtained.
摘要翻译：目的：为了简化通过绝缘膜在衬底中选择性地进行离子注入以提供反向导电层的方法来简化半导体器件的反向导电层的退火，并且从衬底的背面照射红外激光束以加热绝缘膜。构成：通过栅极氧化膜3对P型Si衬底1进行离子注入，形成栅电极5作为掩模，形成N型层6,7，然后从背面照射10.6μm波长的CO 2激光束通过基板加热氧化膜3，并且通过热传导对相邻的N型层6,7进行退火。通过这种结构，由于基板整体上没有被加热，所以不会产生N型层6,7中的杂质的再扩散，容易获得根据设计的通道长度，并且可以简化退火处理。然后用传统的PSG覆盖，并且当形成开口并设置电极时，可以获得具有良好特性的装置。

15. 发明专利

JPS577121A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS577121A
公开(公告)日：1982-01-14
申请号：JP8203280
申请日：1980-06-17
申请人： FUJITSU LTD
发明人： KAWAMURA SEIICHIROU , OGAWA TSUTOMU
IPC分类号： H01L21/265
摘要： PURPOSE:To prevent the deterioration of the characteristics of an element by injecting impurity ions with an SiO2 film as a mask, then annealing the injected layer in N2 gas atmosphere containing small amount of O2, and thereby preventing the inversion of the conductive type of the substrate under the mask layer. CONSTITUTION:A thick SiO2 film 2 is formed, for example, on a P type Si substrate 1, a hole is opened at the film 2, and impurity ions of As or the like is, for example, injected on the overall surface. Thereafter, the injected layer is activated to form a desired impurity doped region 3 by a heat treatment. The atmosphere in the step of heat treating is prepared by N2 gas atmosphere containing 1-10% by volume of O2 gas, and impurity ions injected to the film 2 of the mask are converted to the substrance which is hardly thermally diffused in the film 2. Thus, it can prevent the formation of the inverted layer on the surface of the substrate 1 under the mask 2, and accordingly it can also prevent the increase in the leakage current the increase in the floating capacity as the deterioration of the characteristics.

16. 发明专利

JPS56157023A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56157023A
公开(公告)日：1981-12-04
申请号：JP6086480
申请日：1980-05-08
申请人： FUJITSU LTD
发明人： SASAKI NOBUO , SATOU NORIAKI , OGAWA TSUTOMU
IPC分类号： H01L29/78 , H01L21/265
摘要： PURPOSE:To perform the activation of impurities for subject semiconductor device without giving deterioration on the characteristics of its element by a method wherein a laser annealing is performed after all area of a semiconductor substrate, excluding the surface where an impurity region was formed, has been covered by Mo, W and the like. CONSTITUTION:After the diffusion regions 6 and 7 (ion implanted regions) of impurities such as a source drain and the like have been formed on an Si substrate 1, high-melting point metals 4 and 5 such as Mo, W and the like are covered on a field oxide film 2 and a gate oxide film 3 and then the impurities are activated by performing an annealing with the irradiation of a laser beam. Through these procedures, the mask metal is not fused when the laser beam is irradiation and the activation of impurities can be performed efficiently without deteriorating the semiconductor device.

17. 发明专利

JPS5690557A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5690557A
公开(公告)日：1981-07-22
申请号：JP16792079
申请日：1979-12-22
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU
IPC分类号： H01L27/10 , H01L21/8234 , H01L21/8242 , H01L23/556 , H01L27/06 , H01L27/108 , H01L29/78
摘要： PURPOSE:To prevent a soft error due to alpha rays by a method wherein a memory cell not depending upon a depletion layer is provided, and the diffusion of carriers from the bulk side is properly intercepted. CONSTITUTION:B ions are selectively injected through SiO2 12 on a p type Si substrate 11, a p layer 14 is made up, the formation of a depletion layer is checked, and the layer 14 is used as an electrode of a capacity cell. The SiO2 12 is patterned by an Al mask, and a monocrystal 161 and a polycrystal 162 are manufactured. Si3N4 17 is laminated, an opening is made up, a SiO2 separating layer 18 is built up, a film 17 is patterned, p is diffused, and one sections of the layers 162, 161 are changed into n layers. The whole is thermally oxidized, a surface is covered with SiO2 19, the Si3N4 17 is removed, a gate oxide film 20 is formed, and a poly Si gate 21 and other wiring are made up. Ions are injected and n layers 22 are built up, the layer 21 and others are made conductive, a surface is covered with PSG23 according to a normal method, and an electrode 24 and other wiring are attached. Since information carriers are stored in the layer 162 and the depletion layer is not used in this device, the device is not subject to the influence of alpha rays at all.

18. 发明专利

JPS5687367A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5687367A
公开(公告)日：1981-07-15
申请号：JP16498879
申请日：1979-12-19
申请人： FUJITSU LTD
发明人： MATSUMOTO TAKASHI , WADA KUNIHIKO , OGAWA TSUTOMU , SASAKI NOBUO
IPC分类号： H01L29/78 , H01L21/336 , H01L29/08 , H01L29/417
摘要： PURPOSE:To enable formation of the drain layer on the circumference of the V groove aperture section with a narrow width and also to increase the degree of integration for the subject semiconductor device by a method wherein side etching is performed for the master pattern to be used for the formation of the V groove and then impurities are lead in. CONSTITUTION:A P Si layer 2 and a P Si layer 3 are formed successively, and an SiO2 film 4, and an Si3N4 film 5 are deposited. A V groove mask pattern 7 and an electrode window mask pattern 8 are formed using a photolithographical technique, then a P channel cut layer 12 and a separating layer 13 are formed. The Si3N4 film 5, exposed to three directions of end face, is side-etched and a groove matched pattern 14 is formed. Then drain layers 16, 16' and an SiO2 film 17 are formed by an ion injection and the like, and the V groove matched pattern 14 is removed and a V groove 20 is formed. As a result, the drain layer 16 having a narrow width can be formed on the circumference of the V groove 20.

19. 发明专利

JP2001015021A PHOSPHOR LAYER FORMATION DEVICE OF PLASMA DISPLAY PANEL AND FORMATION METHOD THEREOF 失效
公开(公告)号：JP2001015021A
公开(公告)日：2001-01-19
申请号：JP18571799
申请日：1999-06-30
申请人： FUJITSU LTD
发明人： KANAE TATSUTOSHI , YAMADA TOSHIYUKI , NANTO TOSHIYUKI , OGAWA TSUTOMU
IPC分类号： H01J9/227 , H01J11/22 , H01J11/24 , H01J11/34 , H01J11/42 , H01J11/02
摘要： PROBLEM TO BE SOLVED: To manufacture a PDP having high display quality. SOLUTION: This device is provided with a nozzle head 51 having a storing chamber for storing phosphor paste and plural nozzles for dispensing the phosphor paste from the storing chamber, and a precipitation prevention device formed in the nozzle head 51 for preventing the precipitation of a fluorescent substance contained in the phosphor paste in the storing chamber. The device is provided with the nozzle head 51 having the plural nozzles arranged in line on its lower surface for dispensing the phosphor paste, and a recovery device for recovering the phosphor paste from dummy nozzles by using a predetermined number of the nozzles at both ends of the line of the arranged nozzles as the dummy nozzles. The device is provided with a mounting table for mounting the substrate, the nozzle head 51 with the plural nozzles for dispensing the phosphor paste arranged in the line, a feeding part for feeding the phosphor paste to the nozzle head 51, a linear movement part for relatively linearly moving the nozzle head 51 and the mounting table, and a rotating part for relatively rotating the nozzle head 51 and the mounting table.

20. 发明专利

JPH0345530B2 失效
公开(公告)号：JPH0345530B2
公开(公告)日：1991-07-11
申请号：JP21119181
申请日：1981-12-28
申请人： FUJITSU LTD
发明人： OGAWA TSUTOMU , KAMIOKA HAJIME , KAWAMURA SEIICHIRO , SAKURAI JUNJI
IPC分类号： H01L27/092 , H01L21/02 , H01L21/20 , H01L21/265 , H01L21/762 , H01L21/8238 , H01L21/84 , H01L27/12

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