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11. 发明专利

JPS6261277A METHOD OF STORING HIGHLY EFFICIENT POWER 失效
公开(公告)号：JPS6261277A
公开(公告)日：1987-03-17
申请号：JP20131685
申请日：1985-09-11
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , KONDO WAKICHI , KUMAGAI TOSHIYA
IPC分类号： H01M8/18 , H01M8/22
摘要： PURPOSE:To make it possible to efficiently perform the charging and discharging processes by using a water solution containing hydrogen chloride, ferrochloride and ferrichloride while regulating its hydrogen chloride concentration within a specific range. CONSTITUTION:A charging process in which ferrochloride in a water solution containing hydrogen chloride, ferrochloride and ferrichloride is partly oxidized into ferrichloride at an anode electrode to generate hydrogen at a cathode electrode and a discharging process in which generated hydrogen is oxidized at the anode electrode while reducing a water solution containing generated ferrichloride at the cathode electrode to generate ferrochloride and hydrogen chloride constitute the captioned method. Thereby, the respective water solutions containing chlorinated iron have hydrogen chloride concentration, desirably 2-7mol/kg-H2O and the total iron concentration of the primary iron and the secondary iron, desirably 1-4mol/kg-H2O, while a mol ratio of the primary iron to the secondary iron is desirably in the range of 1/3-3/1.

12. 发明专利

JPS6465003A SUPERCONDUCTIVE MATERIAL AND PRODUCTION THEREOF 失效
公开(公告)号：JPS6465003A
公开(公告)日：1989-03-10
申请号：JP1177188
申请日：1988-01-21
申请人： AGENCY IND SCIENCE TECHN
发明人： MIZUTA SUSUMU , KUMAGAI TOSHIYA , KONDO WAKICHI , KAWAGUCHI KENJI , SHIN SHIGEMITSU , YOKOTA HIROSHI
IPC分类号： C01B13/14 , C01B13/32 , C01G1/00 , C01G3/00 , C04B41/87 , H01B12/04 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To produce a thin filmlike or wiry superconductive material by coating a support with a soln. of specified metal-contg. compds., drying the coated support and carrying out sintering. CONSTITUTION:A support of a metal, ceramics, etc., is coated with a soln. prepd. by dissolving metal-contg. compds. so blended as to obtain a metal compsn. corresponding to a superconductive compd. oxide represented by formula I or II (where A is Y, La, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu or a mixture of two or more among them, B is Ba, Sr, Ca or a mixture of two or more among them, -1

13. 发明专利

JPS62226805A TREATMENT OF HYDROGEN SULFIDE 失效
公开(公告)号：JPS62226805A
公开(公告)日：1987-10-05
申请号：JP6975986
申请日：1986-03-29
申请人： AGENCY IND SCIENCE TECHN , IDEMITSU KOSAN CO
发明人： MIZUTA SUSUMU , KONDO WAKICHI , ISSHIKI SHINGO
IPC分类号： B01D53/52 , B01D53/34 , B01D53/77 , C01B17/05
摘要： PURPOSE:To oxidize FeCl2 to FeCl3 with high efficiency and to efficiently treat H2S by absorbing H2S in an aq. FeCl3 soln. acidified with hydrochloric acid, separating the formed S, adding an inorg. salt such as chlorides to the soln., and then blowing O2 into the soln. CONSTITUTION:An H2S-contg. gas 1 at about 50-90 deg.C is sent by a blower 14 into a gas absorption tower 2 from the lower part and brought into contact with an aq. FeCl3 soln. acidified with hydrochloric acid supplied from the upper part 15 to absorb H2S, and the gas is discharged into the atmosphere as an exhaust gas 4. The FeCl2 slurry 7 contg. formed S is then filtered by a filter 5, and S6 is separated. Meanwhile, at least one kind of inorg. salt among the chlorides of an alkali metal or an alkaline earth metal and NH4Cl is added to the filtrate 8, and O2 or an O2-contg. gas 12 is blown into an oxidation device 10. KCl, LiCl, NaCl, and NH4Cl, especially KCl, are appropriately used as the inorg. salt. The FeCl2 in the aq. soln. is efficiently oxidized to FeCl3 by the treatment, and the soln. is reused for H2S absorption.

14. 发明专利

JPS62197755A MANUFACTURE OF OXIDE SEMICONDUCTOR THIN FILM FOR GAS SENSOR 失效
公开(公告)号：JPS62197755A
公开(公告)日：1987-09-01
申请号：JP3908286
申请日：1986-02-26
申请人： AGENCY IND SCIENCE TECHN , EBARA CORP
发明人： MIZUTA SUSUMU , KONDO WAKICHI , KUMAGAI TOSHIYA , YOKOTA HIROSHI , NAGAI SHINJI , SAKAI KOSHIRO
IPC分类号： G01N27/12
摘要： PURPOSE:To make an oxide semiconductor highly sensitive, by a method wherein a mixture of several metal oxide and a catalyst is diluted and is provided on a substrate as a thin film to be baked by heat. CONSTITUTION:An organic metal compound containing ions of metal (a) forming an oxide semiconductor as main component is mixed with a metal compound containing ions of metal (b) different therefrom and a catalyzing metal (c) as miner component. The metal (a) includes Zn, Ti, Ni, Al and the like, the metal (b) does Mg, Li, Mn and the like and the metal (c) does Pt, Pd and the like and a naphthenic acid salt, fatty acid salt or the like of these metals is used. The mixture of these metal salts is diluted into an organic solvent to form a thin film on a substrate. Then, the work is baked by heat to obtain an oxide semiconductor gas sensor. This makes the oxide semiconductor highly sensitive along with a handy production.

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