专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

11. 发明专利

JP2013057651A Gas analyzer 审中-公开
标题翻译：气体分析仪
公开(公告)号：JP2013057651A
公开(公告)日：2013-03-28
申请号：JP2011281515
申请日：2011-12-22
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： IDO TAKUYA , ONISHI TOSHIKAZU , MORI TETSUYA
IPC分类号： G01N21/61
CPC分类号： G01N21/61 , G01N21/274 , G01N21/3504 , G01N2021/3513 , G01N2021/536 , G01N2021/8514 , G01N2021/8578
摘要： PROBLEM TO BE SOLVED: To provide a measurement unit and a gas analyzer capable of analyzing sample gas more accurately than in the conventional practice.SOLUTION: The gas analyzer includes: one irradiation part arranged outside a gas duct wall; a first reflector for reflecting a measuring beam emitted from the irradiation part and passing through a gas duct; one light receiving part arranged outside the gas duct wall to receive the measuring beam reflected by the first reflector; a second reflector arranged outside the gas duct wall to reflect the measuring beam toward the light receiving part; a known substance housing part provided in space on an optical path between the irradiation part and the second reflector to house known substance; an operation part for analyzing sample gas by reflecting the measuring beam emitted from the irradiation part by the first reflector, and performing correction or calibration using the known substance of the gas analyzer by reflecting the measuring beam emitted from the irradiation part by the second reflector; and a switching part arranged outside the gas duct wall to remove the second reflector from on the optical path during analyzing constituent concentration and to arrange the second reflector on the optical path during performing correction or calibration.
摘要翻译：要解决的问题：提供能够比常规实践更精确地分析样品气体的测量单元和气体分析仪。气体分析仪包括：一个辐射部分，布置在气体管壁外部; 第一反射器，用于反射从照射部分发射并通过气体管道的测量光束; 一个光接收部分布置在气体管壁外部，以接收由第一反射器反射的测量光束; 布置在所述气体管壁外部的第二反射体，以将所述测量光束反射到所述光接收部分; 已知的物质容纳部分设置在照射部分和第二反射器之间的光路上的空间中以容纳已知物质; 用于通过反射由第一反射器从照射部发射的测量光来分析样本气体的操作部分，并且通过使用第二反射器反射从照射部发射的测量光，使用气体分析器的已知物质进行校正或校准; 以及切换部，其布置在所述气体管壁的外侧，以在分析组分浓度期间从所述光路上移除所述第二反射器，并且在执行校正或校准期间将所述第二反射器布置在所述光路上。版权所有（C）2013，JPO＆INPIT

12. 发明专利

JP2010230592A Gas sensor 有权
标题翻译：气体传感器
公开(公告)号：JP2010230592A
公开(公告)日：2010-10-14
申请号：JP2009080520
申请日：2009-03-27
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： TAKADA HIDEJI , MATSUHAMA MAKOTO , IDO TAKUYA
IPC分类号： G01N25/18
摘要： PROBLEM TO BE SOLVED: To ensure a longer life by improving a corrosion resistance, and improve an electric connectivity between a pad portion and a lead pin of a sensor board. SOLUTION: A gas sensor includes the corrosion-resistant sensor board 3 disposed in a measurement space S1, provided with a circuit element 33 for detecting a sample gas, and having the gold or platinum pad portion 34 serving as a wiring connection of the circuit element 33; the nickel alloy lead pin 5 wherein one end 5a is disposed in the measurement space S1 and electrically connected to the pad portion 34, and the other end 5b is disposed outside the measurement space; and a gold or platinum connection 6 which electrically connects between the pad portion 34 and the one end 5a of the lead pin 5. A first layer 7 comprising chromium, tungsten or titanium is formed at the one end 5a of the lead pin 5, and a second layer 8 comprising gold or platinum is formed on the first layer 7. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：通过提高耐腐蚀性来确保更长的寿命，并且改善传感器板的焊盘部分和引脚之间的电连接性。解决方案：气体传感器包括设置在测量空间S1中的耐腐蚀传感器板3，设置有用于检测样品气体的电路元件33，并且具有用作布线连接的金或铂垫部分34 电路元件33; 镍合金引脚5，其中一端5a设置在测量空间S1中并电连接到焊盘部分34，另一端5b设置在测量空间的外部; 以及在焊盘部分34和引脚5的一端5a之间电连接的金或铂连接6。在引脚5的一端5a处形成包括铬，钨或钛的第一层7，包含金或铂的第二层8形成在第一层7上。版权所有（C）2011，JPO＆INPIT

13. 发明专利

JP2006119003A Flow rate detection element for infrared gas analyzer 审中-公开
标题翻译：用于红外气体分析仪的流速检测元件
公开(公告)号：JP2006119003A
公开(公告)日：2006-05-11
申请号：JP2004307635
申请日：2004-10-22
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： IDO TAKUYA
IPC分类号： G01F1/692 , G01N21/37 , G01N21/61
摘要： PROBLEM TO BE SOLVED: To provide a flow rate detection element for an infrared gas analyzer for attaining an improvement of sensing sensitivity and responsiveness without causing complication, large size, and cost increase of a structure. SOLUTION: The flow rate detection element for an infrared gas analyzer includes a substrate 1 having a void part 1a as a gas flow passage, and a heater 4 for applying a constant voltage by being held in a meandering state through an insulation film 2 provided so as to block the void part 1a on the substrate 1. The flow rate detection element forms a plurality of gas flow passage holes 6 on an insulation film part except for a part holding the meandering heater 4, and arranges the meandering heater 4 except for a connection part 4b with an energization electrode 3 to the heater 4 in a region surrounded by a contour OL of the void part 1a on the substrate 1 so that the entire length part is not overlaid on the substrate 1. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于红外线气体分析仪的流量检测元件，以实现感测灵敏度和响应性的提高，而不会导致结构的复杂性，大尺寸和成本增加。解决方案：用于红外线气体分析器的流量检测元件包括：基板1，其具有作为气体流路的空隙部分1a;以及加热器4，用于通过绝缘膜保持在曲折状态下施加恒定电压设置为阻止基板1上的空隙部分1a。流量检测元件在保持蜿蜒加热器4的部分之外的绝缘膜部分上形成多个气体流通孔6，并且布置蜿蜒加热器4 除了在由基板1上的空隙部分1a的轮廓OL包围的区域中具有加热器4的通电电极3的连接部分4b，使得整个长度部分不覆盖在基板1上。（C）2006，JPO＆NCIPI

14. 发明专利

JP2017083233A ガス分析装置审中-公开
公开(公告)号：JP2017083233A
公开(公告)日：2017-05-18
申请号：JP2015209909
申请日：2015-10-26
申请人：株式会社堀場製作所 , Horiba Ltd
发明人： IDO TAKUYA
IPC分类号： G01N21/39 , G01N21/3504 , G01N21/61
CPC分类号： G01N21/59 , G01J3/0218 , G01J3/10 , G01J3/28 , G01J3/4338 , G01N21/61 , G01N33/0073 , G01N2021/399 , G01N2201/0612 , G01N2201/0691 , G01N2201/12
摘要：【課題】測定光の吸光を用いて、精度よく対象ガスを分析する。【解決手段】ガス分析装置100は、複数の光源1−1、1−2、・・・1−nと、導入部5と、受光部7と、分析部94と、複数の光源1−1、1−2、・・・1−nのそれぞれは、測定光Lm1、Lm2、・・・Lmnを同時に出力する。導入部5は、複数の測定光Lm1、Lm2、・・・Lmnを測定空間Sに導入する。受光部7は、合計強度Imを測定する。分析部94は、複数の対象ガスのいずれかが存在する測定空間Sを通過したときに受光部7にて測定される合計強度Imである測定対象強度Idと、複数の対象ガスのいずれもが存在しない測定空間Sを通過したときに受光部7にて測定される合計強度Imである基準強度Idとの差に基づいて、対象ガスの分析を行う。【選択図】図1

15. 发明专利

JP2009156850A Exhaust gas analyzer 审中-公开
标题翻译：排气分析仪
公开(公告)号：JP2009156850A
公开(公告)日：2009-07-16
申请号：JP2007338936
申请日：2007-12-28
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： TAKAMATSU SHUJI , IDO TAKUYA , KOJIMA KENNOSUKE
IPC分类号： G01N1/22
摘要： PROBLEM TO BE SOLVED: To miniaturize an exhaust gas analyzer and to improve the S/N ratio while decreasing the influence of heat from an exhaust pipe and exhaust gas to a photoirradiation section, a photodetection section or the like when the exhaust gas from the exhaust pipe is directly measured.
SOLUTION: This exhaust gas analyzer comprises an inner cylinder 3 that is arranged separately outside in the radial direction of the exhaust pipe 12 and fixed to an end of the opening side of the exhaust pipe 12, an outer cylinder 4 that is arranged separately outside in the radial direction of the inner cylinder 3 and fixed to the inner cylinder 3, a blower 7 for producing fluid flow along the inner peripheral surface of the outer cylinder 4 and the outer peripheral surface of the inner cylinder 3, the photoirradiation section 5 that is attached to the outer cylinder 4 and radiates inspection light La to the exhaust gas exhausted from the exhaust pipe 12, and the photodetection section 6 that is attached to the outer cylinder 4 and detects scattered light and/or transmitted light Lb from the exhaust gas. The inner cylinder 3 has through-holes 32 in parts corresponding to the photoirradiation section 5 and photodetection section 6 attached to the outer cylinder 4, and fluid flow passes at least over the through-holes 32.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：为了使废气分析仪小型化，并且在减少排气管和排气到光照射部的热量的影响的同时，提高S / N比，当排气从排气管直接测量。解决方案：该排气分析仪包括：内筒3，其分别配置在排气管12的径向外侧并固定在排气管12的开口侧的端部;外筒4，分别在内筒3的径向外部并固定到内筒3，用于沿着外筒4的内周面和内筒3的外周面产生流体流动的鼓风机7，照射部 5，其被附接到外筒4，并且将检查光La照射到从排气管12排出的废气，以及安装在外筒4上的光检测部6，从而检测散射光和/或透射光Lb 废气内筒3具有与光照射部5对应的部分和安装在外筒4上的光检测部6的通孔32，流体流通至少在通孔32的上方。（C）2009 ，JPO＆INPIT

16. 发明专利

JP2008254966A Method for manufacturing semiconductor device for mid-infrared light 审中-公开
标题翻译：用于制造中红外光的半导体器件的方法
公开(公告)号：JP2008254966A
公开(公告)日：2008-10-23
申请号：JP2007098850
申请日：2007-04-04
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： SUZUKI JUICHI , TERAKADO TOMOJI , YAMAGISHI YUTAKA , IDO TAKUYA
IPC分类号： C30B25/18 , C23C16/30 , C30B29/40 , H01L21/205 , H01L21/306 , H01S5/323
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device operating in a mid-infrared region, by which a semiconductor device having a good quality and a high performance in comparison with a conventional one can be manufactured at a low cost.
SOLUTION: The method for manufacturing the semiconductor device includes: a sacrificial layer stacking step for stacking a thin sacrificial layer 4 capable of being selectively removed by a specific etching solution on a base stacked-layer body 3 formed by stacking a buffer layer 2 on a crystal substrate 1; a device layer forming step for forming a device layer 5 on the sacrificial layer 4; a device layer separation step for separating the device layer 5 from the base stacked-layer body 3 by etching only the sacrificial layer 4 to remove it after forming the device layer 5 on the sacrificial layer 4; and a reuse step for again applying the sacrificial layer stacking step and the device layer forming step to the base stacked-layer body 3 separated when the device layer 5 is separated in the device layer separation step.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在中红外区域中操作的半导体器件的制造方法，通过该方法可以以低的速度制造具有优良品质和高性能的半导体器件成本。解决方案：半导体器件的制造方法包括：牺牲层堆叠步骤，用于堆叠能够通过特定蚀刻溶液选择性去除的薄牺牲层4，在基底层叠体3上层叠缓冲层 2在晶体基板1上; 用于在牺牲层4上形成器件层5的器件层形成步骤; 器件层分离步骤，用于通过仅在牺牲层4上形成器件层5之后仅蚀刻牺牲层4以除去器件层5与基底层叠体3; 以及重复使用步骤，用于在器件层分离步骤中将器件层5分离时，将牺牲层堆叠步骤和器件层形成步骤再次施加到分离的基底层叠体3。版权所有（C）2009，JPO＆INPIT

17. 发明专利

JP2008215840A Exhaust gas analyzer 有权
标题翻译：排气分析仪
公开(公告)号：JP2008215840A
公开(公告)日：2008-09-18
申请号：JP2007049640
申请日：2007-02-28
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： KOJIMA KENNOSUKE , IDO TAKUYA
IPC分类号： G01N21/49 , G01N1/22 , G01N21/01 , G01N21/15
摘要： PROBLEM TO BE SOLVED: To reduce the temperature effect on a light irradiation part 5 and a light detection part 6 from an exhaust pipe 12 and an exhaust gas when the exhaust gas from the exhaust pipe 12 is directly measured.
SOLUTION: This exhaust gas analyzer is equipped with the inner cylinder 3 arranged so as to be spaced apart outward in the radial direction of the exhaust pipe 12 and fixed to the end part 12A on the opening side of the exhaust pipe 12, the outer cylinder 4 arranged so as to be spaced apart outward in the radial direction of the inner cylinder 3 and fixed to the inner cylinder 3, the light irradiation part 5 attached to the outer cylinder 4 to irradiate the exhaust gas discharged from the exhaust pipe 12 with inspection light La and the light detection part 6 attached to the outer cylinder 4 to detect the scattered light Lc and/or transmitted light Lb from the exhaust gas.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：当直接测量来自排气管12的废气时，从排气管12和排气中降低对光照射部5和光检测部6的温度影响。解决方案：该排气分析装置具备内筒3，该内筒3在排气管12的径向上向外隔开并固定在排气管12的开口侧的端部12A上，外筒4，其被配置成在内筒3的径向外侧隔开并固定在内筒3上，光照射部5安装在外筒4上，对从排气管排出的排气进行照射 12，检测灯La和安装在外筒4上的光检测部6检测来自废气的散射光Lc和/或透射光Lb。版权所有（C）2008，JPO＆INPIT

18. 发明专利

JP2006170895A Manufacturing method for infrared detecting element 审中-公开
标题翻译：红外检测元件的制造方法
公开(公告)号：JP2006170895A
公开(公告)日：2006-06-29
申请号：JP2004366019
申请日：2004-12-17
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： IDO TAKUYA
IPC分类号： G01J1/02 , H01L37/02
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method for an infrared detecting element of high productivity by making a side etching angle in etching of a MgO substrate as larger as possible.
SOLUTION: In this manufacturing method for an infrared detecting element D, a thin film pyroelectric substance 4 is provided in a condition sandwiched by a lower electrode 2 and an upper electrode 3 in a surface 1a side of the substrate 1 (1'), an infrared absorption film 6 is provided on the upper electrode 3 via an insulating film 5, and a cavity part 15 is provided in a substrate area R corresponding to the pyroelectric substance 4, by etching the substrate 1 (1') from a reverse face 1b side, using a mask 12. The mask 12 comprising a material having a satisfactory close-contacting property with the substrate 1 (1') is used in the manufacturing method.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过在尽可能大的MgO基板的蚀刻中形成侧蚀刻角来提供高生产率的红外线检测元件的制造方法。解决方案：在这种红外线检测元件D的制造方法中，在基板1（1'）的表面1a侧的下电极2和上电极3夹持的状态下设置薄膜热电体4，），通过绝缘膜5在上部电极3上设置红外线吸收膜6，通过从基板1（1'）蚀刻基板1（1'），在与热电物质4对应的基板区域R中设置空腔部15。反面1b侧，使用掩模12.在该制造方法中使用包含与基板1（1'）具有令人满意的接触接触特性的材料的掩模12。版权所有（C）2006，JPO＆NCIPI

19. 发明专利

JP2005315723A Thermal infrared sensor 审中-公开
标题翻译：热红外传感器
公开(公告)号：JP2005315723A
公开(公告)日：2005-11-10
申请号：JP2004133846
申请日：2004-04-28
申请人： Horiba Ltd , 株式会社堀場製作所
发明人： IDO TAKUYA
IPC分类号： G01J1/02 , F24F11/02 , G01J5/02 , G01J5/12 , G01J5/20 , G01J5/34 , H01L35/32 , H01L37/00
摘要： PROBLEM TO BE SOLVED: To provide a thermal infrared sensor extremely superior in sensitivity and responsiveness by substantially reducing both transmittance and reflectance by an infrared absorption film and substantially raising an infrared absorption coefficient. SOLUTION: A thermal insulating membrane 4 is formed in the upper surface of a cavity part 6 provided for a silicon substrate 2. A thermocouple 5 for outputting thermoelectromotive force according to temperature changes with the incidence of infrared rays is arranged on the membrane 4. The surface 7a of the infrared absorption film 7 which coats the thermocouple 5 is roughened. The roughened surface 7a of the infrared absorption film 7 is coated with a reflection suppressing film 8 made of a photosensitive organic membrane such as a negative resist material in which an infrared absorption material such as carbon black of approximately 3 wt% is mixed. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：通过大大降低红外线吸收膜的透射率和反射率，大幅提高红外吸收系数，提供灵敏度和响应性极高的热红外传感器。解决方案：在为硅基板2设置的空腔部分6的上表面中形成绝热膜4.用于根据随红外线入射的温度变化输出热电动势的热电偶5布置在膜涂覆热电偶5的红外吸收膜7的表面7a被粗糙化。红外吸收膜7的粗糙表面7a涂覆有反射抑制膜8，其由诸如大约3重量％的炭黑的红外吸收材料混合的光致抗蚀剂材料等光敏有机膜制成。版权所有（C）2006，JPO＆NCIPI

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式