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11. 发明专利

JP2010248041A Method for detecting crystal diameter, load cell used for detecting crystal diameter, device for detecting crystal diameter, and crystal growth apparatus 审中-公开
标题翻译：用于检测晶体直径的方法，用于检测晶体直径的负载单元，用于检测晶体直径的装置和晶体生长装置
公开(公告)号：JP2010248041A
公开(公告)日：2010-11-04
申请号：JP2009100513
申请日：2009-04-17
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： MATSUMURA NOBORU , JINNO YUSUKE , DOBA TABITO
IPC分类号： C30B15/28
摘要： PROBLEM TO BE SOLVED: To provide a method for controlling the size of the diameter of a crystal with high precision by measuring the weight of the crystal with high resolution in a load cell system.
SOLUTION: The method for detecting a crystal diameter comprises detecting the size of the diameter of the crystal 44 by a load cell system which measures the weight of the growing crystal 44 by a load cell 12 and calculates the diameter of the crystal 44 from an increment of weight per unit length of the crystal 44. In the method, as the load cell 12 for measuring the weight of the crystal 44, a load cell 12, constituted by joining a plurality of load cells 12a, 12b each having a different maximum permissible weight in series or combining the plurality of load cells 12a, 12b in layers, is used, and the weight of the crystal 44 is measured by using a weight signal outputted from either of the plurality of load cells 12a, 12b by switching the plurality of load cells 12a, 12b according to the weight of the crystal 44.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：解决的问题：提供一种通过在称重传感器系统中以高分辨率测量晶体的重量来高精度地控制晶体的直径尺寸的方法。解决方案：用于检测晶体直径的方法包括通过称重传感器系统检测晶体44的直径尺寸，测力传感器系统通过测力传感器12测量生长晶体44的重量，并计算晶体44的直径从该晶体44的每单位长度的重量的增加来算出。在该方法中，作为用于测量晶体44的重量的测力传感器12，通过连接多个测力传感器12a，12b构成的测力传感器12，使用串联的不同的最大允许重量或层叠多个称重传感器12a，12b，并且通过使用从多个称重传感器12a，12b中的任一个输出的加权信号通过切换来测量晶体44的重量多个测力传感器12a，12b根据晶体44的重量。版权所有（C）2011，JPO＆INPIT

12. 发明专利

JP2006298669A Apparatus for producing silicon crystal 有权
标题翻译：生产硅晶体的装置
公开(公告)号：JP2006298669A
公开(公告)日：2006-11-02
申请号：JP2005119166
申请日：2005-04-18
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： YAMAGA NORIO , ITO HARUMASA
IPC分类号： C01B33/02
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for producing silicon crystal, the structure of which can be simplified and the manufacturing cost of which can be reduced by dispensing with the upper and lower spatial areas to be required in the conventional apparatus.
SOLUTION: A chamber 10 is composed of a main body part 44a and a door part 44b being the side face of the main body part, so that a crucible 28 can be withdrawn from the side face of the chamber 10. As a result, it is not necessary, in this apparatus for producing silicon crystal, that the upper and lower spatial areas are ensured and a driving means for moving an upper chamber or a lower chamber is arranged.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于制造硅晶体的装置，其结构可以被简化，并且通过分配常规装置中需要的上部和下部空间区域可以降低其制造成本。解决方案：腔室10由主体部分44a和作为主体部分的侧面的门部分44b组成，使得坩埚28可以从室10的侧面撤回。作为结果，在该硅晶体的制造装置中，不需要确保上部空间区域和下部空间区域，并且布置有用于移动上部室或下部室的驱动装置。版权所有（C）2007，JPO＆INPIT

13. 发明专利

JP2005001934A Apparatus for pulling and growing sapphire single crystal 审中-公开
标题翻译：用于拉拔和生长SAPPHIRE单晶的装置
公开(公告)号：JP2005001934A
公开(公告)日：2005-01-06
申请号：JP2003166498
申请日：2003-06-11
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： MATSUMURA NOBORU
IPC分类号： H05B6/04 , C30B15/00 , C30B15/10 , C30B15/14 , C30B29/20 , F27B14/04 , F27B14/06 , F27B14/14 , F27D11/06 , H05B6/24
摘要： PROBLEM TO BE SOLVED: To reduce the cost of a crucible for an apparatus for melting a sapphire powder in the crucible by high frequency induction heating, and pulling and growing a sapphire single crystal.
SOLUTION: The apparatus has a cylindrical heating chamber 60 provided in a cylindrical chamber, a heating coil arranged at the outer periphery of the heating chamber 60, the crucible 69 provided inside the heating chamber 60, an after-heater 76 provided above the crucible 69, and the high frequency electric source for supplying a high frequency current to the heating coil, wherein the sapphire powder 57 is melted by heating the crucible to a high temperature by the heating coil to obtain solution, the solution is brought into contact with a seed and pulled and the sapphire single crystal is grown. Further in the apparatus, the crucible 69 is formed from molybdenum, tungsten, or a mixture of them, the heating chamber 60 is made of a carbon felt forming member, and a plurality of grooves 65 are formed in the circumferential surface of cylindrical parts 61, 62, in longitudinal direction, of the heating chamber.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了降低用于通过高频感应加热熔化坩埚中的蓝宝石粉末的装置的坩埚的成本，以及拉伸和生长蓝宝石单晶。解决方案：该装置具有设置在圆筒形室中的圆柱形加热室60，设置在加热室60的外周处的加热线圈，设置在加热室60内部的坩埚69，设置在加热室60内部的后置加热器76 坩埚69和用于向加热线圈供给高频电流的高频电源，其中蓝宝石粉末57通过加热线圈将坩埚加热至高温而熔化以获得溶液，使溶液接触用种子拉，蓝宝石单晶生长。此外，在该装置中，坩埚69由钼，钨或它们的混合物形成，加热室60由碳毡形成部件构成，并且在圆筒部61的周面形成有多个槽65 ，62，在纵向上，加热室。版权所有（C）2005，JPO＆NCIPI

14. 发明专利

JP2017091980A 放電プラズマ焼結装置および連続型放電プラズマ焼結装置审中-公开
公开(公告)号：JP2017091980A
公开(公告)日：2017-05-25
申请号：JP2015224361
申请日：2015-11-17
申请人：株式会社第一機電 , Daiichi Kiden:Kk
发明人： SUGIMOTO SHIGEKI , SAWADA TAKASHI , ONO RYUICHI , WATANABE TAKASHI
IPC分类号： H05H1/46 , B22F3/14 , B30B11/00 , B30B11/02 , C04B35/64
摘要：【課題】過大なパルス電流を流すことなく、特性ばらつきの少ない良好な焼結品を得ることが可能な放電プラズマ焼結装置および連続型放電プラズマ焼結装置を提供する。【解決手段】チェンバー12とチェンバー内に設置された断熱材により構成した円筒状の焼結室13とを備え、成形ダイと成形ダイに挿入される上パンチおよび下パンチとからなるカートリッジ11を焼結室13内に配置し、成形ダイの中の原料を前記の上下パンチを使用して圧縮し、上下パンチ間にパルス状電流を流して焼結させる放電プラズマ焼結手段と、焼結室13の外側に成形ダイまたは原料を高周波誘導加熱する手段とを備えている。【選択図】図1

15. 发明专利

JP2012153570A Pulling-up sapphire single crystal growing apparatus 审中-公开
标题翻译：拉UP E E E。。。。。。。。。。。
公开(公告)号：JP2012153570A
公开(公告)日：2012-08-16
申请号：JP2011014418
申请日：2011-01-26
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： MATSUMURA NOBORU
IPC分类号： C30B29/20
摘要： PROBLEM TO BE SOLVED: To provide a pulling-up sapphire single crystal apparatus which allows a sapphire single crystal to grow while pulling up by dissolving sapphire powder in a crucible with high-frequency induction heating in order to reduce the cost of the crucible.SOLUTION: In the pulling-up sapphire single crystal growing apparatus, the crucible is formed by molybdenum, tungsten or a mixture of molybdenum and tungsten, the heating chamber is formed by carbon felt or a carbon felt molded article wherein a plurality of grooves which extend along the tubular axis direction are formed at the inner peripheral surface and the outer peripheral surface of the carbon felt or the carbon felt molded article, and a plurality of grooves are arranged so that the grooves of the outer peripheral surface and the inner peripheral surface are alternately shifted to each other with a gap to the peripheral surface of the carbon felt or the carbon felt molded article to form the heating chamber.
摘要翻译：要解决的问题：提供一种拉高蓝宝石单晶设备，其允许蓝宝石单晶在通过用高频感应加热将蓝宝石粉末溶解在坩埚中的同时拉起来生长，以便降低成本坩。解决方案：在提拉蓝宝石单晶生长装置中，坩埚由钼，钨或钼和钨的混合物形成，加热室由碳毡或碳毡模制品形成，其中多个在碳毡或碳毡成形体的内周面和外周面形成有沿管状轴线方向延伸的槽，并且配置有多个槽，使得外周面和内周面的槽圆周表面与碳毡或碳毡模制品的周边表面间隙交替地彼此移动以形成加热室。版权所有（C）2012，JPO＆INPIT

16. 发明专利

JP2007217199A Method and apparatus for manufacturing single crystal 审中-公开
标题翻译：制造单晶的方法和装置
公开(公告)号：JP2007217199A
公开(公告)日：2007-08-30
申请号：JP2006036561
申请日：2006-02-14
申请人： Daiichi Kiden:Kk , 株式会社第一機電
发明人： ISHII MITSURU , ASAI TADANORI , KAWAMURA MASAYUKI , KITO TAKAYUKI , ADACHI TOMOHIRO
IPC分类号： C30B11/00
摘要： PROBLEM TO BE SOLVED: To efficiently manufacture a high quality single crystal having a large crystal diameter and a long length in the growth of the single crystal by a vertical Bridgman method.
SOLUTION: An apparatus for manufacturing the single crystal by the vertical Bridgman method is equipped with: a tubular furnace tube in which a raw material is arranged; a melting means which is arranged so as to cover the outer circumferential side of the furnace tube and which melts the raw material in the furnace tube by controlling the temperature in the furnace tube in the covered region; and a soaking means which is arranged so as to cover the outer circumferential side of the furnace tube and after crystallization of the raw material in the furnace tube, keeps the crystal at a temperature lower than the solidification point by controlling the temperature in the furnace tube in the covered region, wherein the melting means and the soaking means are spaced at a prescribed gap and a region not covered with the melting means and the soaking means is formed in the outer circumferential surface of the furnace tube.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过垂直布里奇曼方法在单晶生长中有效地制造具有大晶粒直径和长长度的高质量单晶。解决方案：通过垂直布里奇曼法制造单晶的装置配备有：其中布置原料的管状炉管; 熔化装置，其被设置成覆盖炉管的外周侧，并且通过控制被覆盖区域中的炉管中的温度来熔化炉管中的原料; 以及设置成覆盖炉管的外周侧并且在炉管中的原料结晶之后的均热装置通过控制炉管中的温度将晶体保持在低于凝固点的温度在覆盖区域中，其中熔化装置和均热装置以规定的间隙隔开，并且未被熔化装置覆盖的区域和均热装置形成在炉管的外周表面中。版权所有（C）2007，JPO＆INPIT

17. 发明专利

JP2007183149A Neutron detector 审中-公开
标题翻译：中性探测器
公开(公告)号：JP2007183149A
公开(公告)日：2007-07-19
申请号：JP2006001164
申请日：2006-01-06
申请人： Daiichi Kiden:Kk , Institute Of Physical & Chemical Research , 株式会社第一機電 , 独立行政法人理化学研究所
发明人： HIROTA KATSUYA , SHIMIZU HIROHIKO , ADACHI TOMOHIRO
IPC分类号： G01T3/06 , C09K11/00 , C09K11/63 , G01T1/29
CPC分类号： G01T3/06
摘要： PROBLEM TO BE SOLVED: To detect a high-intensity neutron flux, prevent operation from becoming unstable when a large number of neutrons are irradiated, and measure a neutron flux directly.
SOLUTION: The neutron detector using a neutron scintillator as a neutron detection medium, comprises a frame 22 formed with a plurality of holes, the neutron scintillators 24 fitted into the holes 22a formed in the frame 22, a multi-anode photomultiplier tube 30 forming photoelectric surface pixels to which output signals from the neutron scintillators 24 are input, and a photodetection section for obtaining a neutron image on the basis of output signals from the photoelectric surface pixels.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了检测高强度中子通量，当照射大量中子时，防止操作变得不稳定，并且直接测量中子通量。解决方案：使用中子闪烁体作为中子检测介质的中子检测器包括形成有多个孔的框架22，嵌入在框架22中形成的孔22a中的中子闪烁体24，多阳极光电倍增管 30，形成来自中子闪烁体24的输出信号的光电表面像素，以及用于根据来自光电表面像素的输出信号获得中子图像的光电检测部分。版权所有（C）2007，JPO＆INPIT

18. 发明专利

JP2004217469A Apparatus for pulling single crystal 审中-公开
标题翻译：装置单晶
公开(公告)号：JP2004217469A
公开(公告)日：2004-08-05
申请号：JP2003006847
申请日：2003-01-15
申请人： Daiichi Kiden:Kk , Tokuyama Corp , 株式会社トクヤマ , 株式会社第一機電
发明人： NAWATA TERUHIKO , KUDO MASAMI , YANAGI HIROYUKI , NITTA SHINICHI , ITO HARUMASA , YAMAGA NORIO
IPC分类号： C30B15/00 , C30B29/12
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for pulling a single crystal which can stably manufacture the single crystal over a long time and retain high transparency and see-through of a transparent plate at a peep hole.
SOLUTION: In the apparatus for pulling the single crystal of calcium chloride, etc., the tubular peep hole whose open end is blocked with the transparent plate is located at the upper part of a chamber. A cooler such as a cooling jacket is installed at the wall around the peep hole, or an inert gas-ejecting system is installed near the open end of the peep hole.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于拉长长时间稳定地制造单晶的单晶的装置，并且在窥视孔处保持透明板的高透明度和透明度。解决方案：在用于拉出氯化钙等单晶的设备中，开口端用透明板封闭的管状窥视孔位于室的上部。诸如冷却套的冷却器安装在窥视孔周围的壁上，或者在窥视孔的开口端附近安装惰性气体喷射系统。版权所有（C）2004，JPO＆NCIPI

19. 发明专利

JP2004182587A Single crystal pulling apparatus for metal fluoride 有权
公开(公告)号：JP2004182587A
公开(公告)日：2004-07-02
申请号：JP2003383439
申请日：2003-11-13
申请人： Daiichi Kiden:Kk , Tokuyama Corp , 株式会社トクヤマ , 株式会社第一機電
发明人： NAWATA TERUHIKO , MIYAZAKI HIDETAKA , YANAGI HIROYUKI , NITTA SHINICHI , ITO HARUMASA , YAMAGA NORIO
IPC分类号： C30B29/12 , C30B15/00 , C30B15/14
摘要： PROBLEM TO BE SOLVED: To develop a single crystal pulling apparatus in which uneven distribution of temperature in the pulling region of a single crystal is improved and a single crystal of metal fluoride can be favorably manufactured without cracks.
SOLUTION: The single crystal pulling apparatus for metal fluorides is equipped with: a crucible housing a melt of the source material for the manufacture of the single crystal and disposed in a chamber; a melting heater disposed to surround the crucible; a single crystal pulling rod which has a seed crystal at the top and which can vertically move to touch the melt of the source material housed in the crucible; and a heat insulating wall disposed in the chamber to surround at least the upper part of the crucible which is the periphery of the single crystal pulling zone. Further, the apparatus is equipped with: a ceiling plate to close the upper end opening of the heat insulating wall; and a single crystal pulling chamber enclosed by the heat insulating wall and the ceiling plate. The ceiling plate has at least an insertion hole to insert the single crystal pulling rod. The heat radiating ability of the ceiling plate in the thickness direction is specified to 1,000 to 50,000 W/(m
2 ×K).
COPYRIGHT: (C)2004,JPO&NCIPI

20. 发明专利

JP2003068658A Heat treatment apparatus and production method for semiconductor device 审中-公开
标题翻译：用于半导体器件的热处理设备和生产方法
公开(公告)号：JP2003068658A
公开(公告)日：2003-03-07
申请号：JP2001258276
申请日：2001-08-28
申请人： Daiichi Kiden:Kk , Sony Corp , Toyoko Kagaku Co Ltd , ソニー株式会社 , 東横化学株式会社 , 株式会社第一機電
发明人： INAKANAKA HIROSHI , OKUHARA ASAYUKI , DOBASHI AKIRA , MATSUSHITA TAKESHI
IPC分类号： H01L21/22 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a heat treatment, with which the temperature can be elevated/lowered at high speed, while uniformly heating a workpiece to be treated such as a semiconductor wafer in a furnace, when high-frequency induction heating is applied thereto, and to provide a production method for semiconductor device to use such a device. SOLUTION: In the heat treatment apparatus to use a high-frequency induction heating system as a heating source for the workpiece, a dummy object to be treated, with which induction heating is more easily applied than the workpiece to be treated, is used as an auxiliary heat source for directly heating the workpiece and uniformity of heat treatment temperature is secured.
摘要翻译：要解决的问题：为了提供一种在高频感应加热时能够高温地升高/降低温度的同时对炉内的半导体晶片等被处理体进行均匀加热的热处理并提供半导体器件使用这种器件的制造方法。解决方案：在使用高频感应加热系统作为工件的加热源的热处理装置中，使用与要处理的工件相比更容易施加感应加热的待处理的虚拟物体作为确保用于直接加热工件的辅助热源和热处理温度的均匀性。

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