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151. 发明专利

JP2008159692A Method for manufacturing semiconductor substrate 审中-公开
标题翻译：制造半导体基板的方法
公开(公告)号：JP2008159692A
公开(公告)日：2008-07-10
申请号：JP2006344599
申请日：2006-12-21
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： NARITA AKIKO , SENDA TAKESHI , TOYODA EIJI , ISOGAI HIROMICHI , SENSAI KOJI
IPC分类号： H01L21/02 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate with two semiconductor wafers directly joined therein and capable of effectively suppressing the generation of a void in a joint interface by optimizing a joint thermal treatment condition.
SOLUTION: The semiconductor substrate manufacturing method is used to manufacture the semiconductor substrate with two semiconductor wafers directly joint therein, including: a process for preparing the first and second semiconductor wafers; a process for mirror-polishing the surfaces of the first and second semiconductor wafers; a process for superimposing and joining the mirror-polished surfaces of the first and second semiconductor wafers; a first thermal treatment process for thermally treating the joined semiconductor wafers under the atmosphere of inactive gas; and a second thermal treatment process for continuously performing the thermal treatment under the atmosphere of the inactive gas at temperature higher than that of the first thermal treatment process after the first thermal treatment process.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种半导体衬底的制造方法，该半导体衬底具有直接接合在其中的两个半导体晶片，并能够通过优化接合热处理条件来有效地抑制接合界面中的空隙的产生。解决方案：半导体衬底制造方法用于制造具有直接接合在其中的两个半导体晶片的半导体衬底，包括：制备第一和第二半导体晶片的工艺; 用于对第一和第二半导体晶片的表面进行镜面抛光的工艺; 用于叠加和接合第一和第二半导体晶片的镜面抛光表面的工艺; 用于在惰性气体的气氛下热处理接合的半导体晶片的第一热处理工艺; 以及第二热处理工艺，用于在第一热处理工艺之后，在高于第一热处理工艺的温度下，在惰性气体的气氛下连续进行热处理。版权所有（C）2008，JPO＆INPIT

152. 发明专利

JP2008137868A Member for semiconductor fabrication machines and equipment 有权
标题翻译：半导体制造机械和设备的会员
公开(公告)号：JP2008137868A
公开(公告)日：2008-06-19
申请号：JP2006327378
申请日：2006-12-04
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： NAGATA TOMOHIRO , OKADA YUTAKA , ICHINOKURA MASATO
IPC分类号： C04B41/89 , C23C24/04 , C23C28/00 , C23C28/04
摘要： PROBLEM TO BE SOLVED: To provide a member which can effectively suppress debonding of a film and development of cracks due to the difference of the coefficients of linear thermal expansion between a substrate and the film, the member comprising the film formed on the substrate by an aerosol deposition method, and can be suitably used for semiconductor fabrication machines and equipment repeatedly used at high temperatures.
SOLUTION: The member comprises a substrate, at least one intermediate layer formed on at least part of the substrate, and a film formed on the intermediate layer by an aerosol deposition method. The difference of the coefficient of linear thermal expansion between the substrate and the film is 3×10
-6 /K or more. The intermediate layer has a mixed composition of a component of the substrate and a component of the film.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供能够有效地抑制膜的脱粘和由于基板和膜之间的线性热膨胀系数的差异而引起的裂纹的构件，包括形成在膜上的膜的构件通过气溶胶沉积方法，可以适用于在高温下重复使用的半导体制造机器和设备。解决方案：构件包括基底，至少一个中间层形成在基底的至少一部分上，以及通过气溶胶沉积法形成在中间层上的膜。衬底和膜之间的线性热膨胀系数的差值为3×10 -6 / SP / K以上。中间层具有基材的成分和膜的成分的混合组成。版权所有（C）2008，JPO＆INPIT

153. 发明专利

JP4103997B2 Heating and cooling unit and the heating and cooling device using this unit 有权
公开(公告)号：JP4103997B2
公开(公告)日：2008-06-18
申请号：JP2003080255
申请日：2003-03-24
申请人：コバレントマテリアル株式会社
发明人：明小池
IPC分类号： H05B3/00 , H05B3/44 , F27B5/14 , F27D11/02 , F27D19/00 , H05B3/12 , H05B3/14 , H05B3/62

154. 发明专利

JP4099382B2 Inner diameter grinding apparatus 有权
公开(公告)号：JP4099382B2
公开(公告)日：2008-06-11
申请号：JP2002370980
申请日：2002-12-20
申请人：コバレントマテリアル株式会社
发明人：拓也足立
IPC分类号： B24B5/40 , B24B5/08

155. 发明专利

JP4087628B2 Of the glass tube bending apparatus 有权
公开(公告)号：JP4087628B2
公开(公告)日：2008-05-21
申请号：JP2002078266
申请日：2002-03-20
申请人：コバレントマテリアル株式会社
发明人：道雄佐々木 , 和生柴田
IPC分类号： C03B23/06

156. 发明专利

JP2008105903A Method for manufacturing titania-silica glass 审中-公开
标题翻译：制造钛硅玻璃的方法
公开(公告)号：JP2008105903A
公开(公告)日：2008-05-08
申请号：JP2006290877
申请日：2006-10-26
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： KAWABATA SHINJI
IPC分类号： C03B8/04 , C03C3/06 , G03F1/22 , G03F1/24 , H01L21/027
CPC分类号： C03B19/1453 , C03B2201/42 , Y02P40/57
摘要： PROBLEM TO BE SOLVED: To provide a method for effectively manufacturing titania-silica glass which is practically free from bubbles and is transparent and which can be suitably used as an optical member such as a mask, a mirror material or the like in extreme-ultraviolet light lithography.
SOLUTION: The titania-silica glass is manufactured by heat-treating a porous titania-silica containing 1-10 wt.% of titania produced by the VAD method, to prepare a calcined titania-silica body and subjecting the calcined titania-silica body to a treatment for making it transparent under a vacuum atmosphere, at 1,600-1,800°C and at 0.1-1 MPa using a carbon mold.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种实际上没有气泡并且是透明的二氧化钛 - 石英玻璃的有效制造方法，其可以适当地用作诸如掩模，反射镜材料等的光学构件极紫外光刻。解决方案：二氧化钛 - 二氧化硅玻璃通过热处理含有1-10重量％的通过VAD法制备的二氧化钛的多孔二氧化钛 - 二氧化硅来制备，以制备煅烧二氧化钛 - 二氧化硅体并对经煅烧的二氧化钛 - 二氧化硅体进行处理以使其在真空气氛下透明，在1600-1800℃和0.1-1MPa下使用碳模具。版权所有（C）2008，JPO＆INPIT

157. 发明专利

JP2008100891A Titania-silica glass 审中-公开
标题翻译：钛硅玻璃
公开(公告)号：JP2008100891A
公开(公告)日：2008-05-01
申请号：JP2006286740
申请日：2006-10-20
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： EZAKI MASANOBU , KAWABATA SHINJI , KATO SACHIKO
IPC分类号： C03C3/06 , C03B20/00 , G03F1/24 , G03F1/60
CPC分类号： B82Y40/00 , B82Y10/00 , C03C3/06 , C03C4/0085 , C03C2201/42 , G03F1/24 , G03F1/60
摘要： PROBLEM TO BE SOLVED: To provide titania-silica glass which is transparent glass of low thermal expansion, in particular, having a low coefficient of thermal expansion in a wide temperature range of 0-100°C which is the service temperature when the glass is used as a photomask or a mirror material in extreme ultraviolet lithography, and is excellent in in-plane homogeneity and stability. SOLUTION: The titania-silica glass comprises 8-10 wt.% of titania and 90-92 wt.% of silica, wherein concentration of the trivalent titanium ion is 10-60 wt. ppm. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供作为低热膨胀的透明玻璃的二氧化钛 - 二氧化硅玻璃，特别是在0-100℃的宽温度范围内具有低的热膨胀系数，其为工作温度该玻璃在极紫外光刻中用作光掩模或镜面材料，并且具有优异的面内均匀性和稳定性。解决方案：二氧化钛 - 二氧化硅玻璃包含8-10重量％的二氧化钛和90-92重量％的二氧化硅，其中三价钛离子的浓度为10-60重量％。 PPM。版权所有（C）2008，JPO＆INPIT

158. 发明专利

JP4077952B2 Manufacturing method of a silicon single crystal pulling for quartz glass crucible 有权
公开(公告)号：JP4077952B2
公开(公告)日：2008-04-23
申请号：JP25146698
申请日：1998-09-04
申请人：コバレントマテリアル株式会社
发明人：浩三北野 , 駿蔵島井 , 聰鹿内
IPC分类号： C03B20/00 , C30B15/10 , C03B19/09 , C30B29/06 , H05B7/085
CPC分类号： C03B19/095 , Y02P40/57

159. 发明专利

JP2008087995A Single crystal pulling apparatus 审中-公开
标题翻译：单晶拉丝装置
公开(公告)号：JP2008087995A
公开(公告)日：2008-04-17
申请号：JP2006267959
申请日：2006-09-29
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： ABE YOSHIAKI
IPC分类号： C30B29/06 , C30B15/02
摘要： PROBLEM TO BE SOLVED: To provide a single crystal pulling apparatus with which working efficiency can be enhanced without interruption of the work in the process of filling material silicon to a crucible, even if the wire suspending the valve of a hopper for the storage of a material silicon is cut off while preventing dropping off of each member, accompanying the cut, to the crucible.
SOLUTION: In a single crystal pulling apparatus equipped with a filling means to fill a material silicon L to a crucible, the filling means comprises a hopper main body 14 which stores the material silicon L, also has an opening port formed at the bottom and engaged inside a chamber; a valve 17 which is formed freely openable and closable to the opening port and discharges the material silicon L inside the hopper main body 14 to the crucible situated below by opening the opening port; a first wire 19 suspending the valve 17 upwardly and downwardly movable; and a second wire 20 which is formed to be longer than the first wire 19 by a specific length and has each terminal connected to the position where a respective terminal of the first wire 19 is connected.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供一种可以提高工作效率而不会在将硅填充到坩埚的过程中中断工作的单晶拉制装置，即使将悬挂有用于切断材料硅的储存，同时防止伴随切割的每个构件脱落到坩埚。解决方案：在具有将材料硅L填充到坩埚的填充装置的单晶拉制装置中，填充装置包括存储材料硅L的料斗主体14，还具有形成在坩埚上的开口底部并接合在室内; 阀17，其可自由地打开和关闭到开口，并通过打开开口将料斗主体14内的材料硅L排放到位于下方的坩埚; 第一线19将阀17向上和向下移动; 以及第二线20，其被形成为比第一线19长一个特定长度，并且每个端子连接到第一线19的相应端子连接的位置。版权所有（C）2008，JPO＆INPIT

160. 发明专利

JP2008080428A Double-sided polishing device and double-sided polishing method 审中-公开
标题翻译：双面抛光装置和双面抛光方法
公开(公告)号：JP2008080428A
公开(公告)日：2008-04-10
申请号：JP2006262306
申请日：2006-09-27
申请人： Covalent Materials Corp , コバレントマテリアル株式会社
发明人： SUZUKI KEIICHI
IPC分类号： B24B37/04 , B24B9/00 , B24B37/08 , H01L21/304
摘要： PROBLEM TO BE SOLVED: To provide a double-sided polishing device, and a double-sided polishing method capable of evenly polishing top and bottom faces of a wafer edge parts without reversing the top and bottom faces of a semiconductor wafer in the middle of polishing both faces of the semiconductor wafer, and manufacturing the semiconductor wafer with high quality and low manufacturing cost. SOLUTION: This both-sided polishing device polishes both of top and back faces of a semiconductor wafer 10 by rotation of bottom and top surface plates provided with polishing clothes 22a, 24a for polishing top and rear faces on opposed faces. A semiconductor wafer holding hole 30 is provided on a carrier 14 arranged between a bottom surface plate and a top surface plate, and an abrasive material 12 for polishing an annular semiconductor wafer edge is provided on an inner periphery of the semiconductor wafer holding hole 30. The abrasive material 12 has a vertical cross sectional shape symmetrical upward and downward, and the top and the bottom of the abrasive material 12 extends in a central direction of the semiconductor wafer holding hole 30. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种双面抛光装置和能够均匀地抛光晶片边缘部分的顶面和底面而不使其中的半导体晶片的顶面和底面反转的双面抛光方法在半导体晶片的两面抛光的中间，制造半导体晶片，质量高，制造成本低。解决方案：这种双面抛光装置通过旋转设置有抛光衣物22a，24a的底面和顶面板来抛光半导体晶片10的顶面和背面，用于抛光相对面上的顶面和后面。半导体晶片保持孔30设置在布置在底面板和顶面板之间的托架14上，并且在半导体晶片保持孔30的内周上设置用于抛光环形半导体晶片边缘的磨料12。研磨材料12具有向上和向下对称的垂直横截面形状，研磨材料12的顶部和底部沿半导体晶片保持孔30的中心方向延伸。版权所有（C）2008，JPO＆INPIT

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