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141. 发明专利

JP2773362B2 失效
公开(公告)号：JP2773362B2
公开(公告)日：1998-07-09
申请号：JP6216990
申请日：1990-03-12
IPC分类号： C07D241/44 , C01G55/00 , C07F15/00 , C08G73/06

142. 发明专利

JPH1087544A RECOVERY OF GROUP VIII METALS FROM CARBONYLATING REACTIONAL SOLUTION 失效
公开(公告)号：JPH1087544A
公开(公告)日：1998-04-07
申请号：JP24605696
申请日：1996-09-18
申请人： MITSUBISHI CHEM CORP
发明人： MORI TOMOYUKI , TAKAI MASAKI , INOUE TOMOHIKO , YOKOYAMA KAZUYUKI
IPC分类号： B01D11/04 , B01J31/28 , B01J38/00 , C01G55/00 , C07B61/00 , C07C45/50 , C07C47/02 , C22B11/00
摘要： PROBLEM TO BE SOLVED: To make it possible to efficiently recover group VIII metals from a solution, containing the group VIII metals and used for a carbonylating reacting with a high recovery ratio at a low cost, by bringing the solution into contact with a polar solvent containing a specific metal salt dissolved therein and an oxidizing agent and then separating phases. SOLUTION: (A) A solution, containing group VIII metals and used for carbonylating reaction such as an oxo reaction (e.g. Co, Ru, Rh, Pd, Os, Ir or Pt, especially the Rh in the case of the oxo reaction) is brought into contact with (B) a polar solvent containing an alkali metallic salt of an inorganic acid dissolved therein (e.g. water containing a sulfate, a phosphate, a chloride, a borate or a carbonate of sodium or potassium dissolved therein) and (C) an oxidizing agent (e.g. hydrogen peroxide, oxygen or an oxygen-containing gas) and the phase are then separated to separate and recover the polar solvent phase containing the group VIII metal.

143. 发明专利

JPH101316A LITHIUM-COBALT MULTIPLE OXIDE AND PRODUCTION THEREOF, AND LITHIUM ION SECONDARY BATTERY 失效
公开(公告)号：JPH101316A
公开(公告)日：1998-01-06
申请号：JP17175596
申请日：1996-06-10
申请人： SAKAI CHEMICAL INDUSTRY CO
发明人： AOKI MASASHI , FUKAI KIYOSHI , KIRA YOSHIYUKI
IPC分类号： C01G51/00 , C01G53/00 , C01G55/00 , H01M4/505 , H01M4/525 , H01M10/05 , H01M4/04 , H01M4/58 , H01M10/40
摘要： PROBLEM TO BE SOLVED: To obtain multiple oxide particle suitable for a positive electrode activating material for Li ion secondary battery by dispersing cobalt hydroxide being trivalent cobalt oxyhydroxide and a specific compound into a lithium hydroxide aqueous liquid and rejecting to heat treatment. SOLUTION: At least one kind between cobalt and cobalt hydroxide oxyhydroxide, each having trivalent valency and a compound at least one kind element among B, Mg, Si, Cu, Cy, Y, Ti, V, Mn, Fe, Ni, Sn, Zr, Sb, Nb, Ru, Pb, Hf, Ta, La, Pr, and Nd are dispersed into the Li hydroxide aqueous liquid and heated to obtain the object complex oxide particles. The Li-Co multiple oxide particle is submicron size and has narrow particle distribution, large specific surface area and a uniform composition.

144. 发明专利

JPH09173835A NOBLE METAL ADSORBENT AND RECOVERY OF NOBLE METAL 失效
公开(公告)号：JPH09173835A
公开(公告)日：1997-07-08
申请号：JP35097395
申请日：1995-12-25
申请人： CHIYODA CHEM ENG CONSTRUCT CO
发明人： YONEDA NORIYUKI , MINAMI TAKESHI , NAKAGAWA YOSHIHIRO
IPC分类号： B01D15/00 , B01J20/26 , C01G55/00
摘要： PROBLEM TO BE SOLVED: To provide an adsorbent with an efficient adsorptive activity to a neutral complex containing a noble metal such as rhodium without requiring the bond of a special ligand such as organophosphorus ligand and at the same time, a method for recovering the noble metal from a liquid with the use of the adsorbent. SOLUTION: This adsorbent is for adsorbing a neutral complex containing a noble metal in a liquid, and is composed of a vinylpyridine resin containing a pyridine ring. In this case, a method for recovering a noble metal from a liquid containing the neutral complex containing the noble metal consists of (i) an adsorption step to bring the liquid into contact with the vinylpyridine resin containing the pyridine ring and (ii) a desorption step to bring the liquid containing a sufficient quantity of a ligand compound for desorbing the noble metal adsorbed in the resin into contact with the resin.

145. 发明专利

JPH09115671A DIELECTRIC THIN FILM AND THIN FILM EL ELEMENT USING DIELECTRIC THIN FILM 失效
公开(公告)号：JPH09115671A
公开(公告)日：1997-05-02
申请号：JP17370096
申请日：1996-07-03
申请人： DENSO CORP , TOYOTA CENTRAL RES & DEV
发明人： INOKUCHI KAZUHIRO , UCHIDA TOMOYA , HATTORI TAMOTSU , ITO NOBUE , HATTORI TADASHI , NODA KOJI , FUJIKAWA HISAYOSHI , TOKITOU SEIJI , TAGA YASUNORI
IPC分类号： C01G55/00 , H01B3/10 , H05B33/10 , H05B33/12 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To enhance dielectric characteristics and prevent increase in electric resistance on stacking with ITO by forming an amorphous thin film comprising at least one metal selected from tantalum, indium, and tin, and oxygen and nitrogen. SOLUTION: A first transparent electrode 12 made of an optically transparent ITO is formed on an insulating substrate made of alkali-free glass. A first insulating layer 13 is formed on the first transparent electrode 12 by a sputtering process. A zinc sulfide : terbium luminescent layer 14 in which zinc sulfide is used as a base material and terbium is added as a luminescent center is formed on the first insulating layer 13 by a sputtering process. A second insulating layer 15 made of TaSnON is formed on the luminescent layer 14, and a second transparent electrode 16 made of ITO is formed on the second insulating layer 15. A thin EL element with low driving voltage and high luminescent brightness compared with an EL element using SiON as the insulating layer is obtained.

146. 发明专利

JP2591787B2 失效
公开(公告)号：JP2591787B2
公开(公告)日：1997-03-19
申请号：JP9911788
申请日：1988-04-21
申请人： TANAKA KIKINZOKU KOGYO KK , KIUCHI HIROMICHI
发明人： TAMEMASA HIROSHI , KIUCHI HIROMICHI
IPC分类号： C01G55/00

147. 发明专利

JPH08511466A 失效
公开(公告)号：JPH08511466A
公开(公告)日：1996-12-03
申请号：JP52559994
申请日：1994-05-06
IPC分类号： B01D15/00 , B01J20/26 , C01G55/00 , C07D327/00 , C07F7/08 , C09K3/00 , C22B3/26 , C22B13/00 , C22B26/00 , C22B26/10 , C22B26/20 , C22B61/00
摘要： A method for the removal, separation, and concentration of alkali metal, alkaline earth metal, Pb and/or Tl cations from a source solution which may contain larger concentrations of other ions comprises bringing the source solution into contact with a compound comprising an oxygen donor macrocycle-containing ligand covalently bonded through an organic spacer silicon grouping to a solid inorganic support. The ligand portion(s) of the compound has affinity for alkali metal, alkaline earth metal, Pb and/or Tl thereby removing them from the source solution. The alkali metal, alkaline earth metal, Pb and/or Tl cations are then removed from the compound through contact with a much smaller volume of a receiving solution in which these cations are either soluble or which has greater affinity for such cations than does the oxygen donor macrocyclic ligand thereby quantitatively stripping the complexed cations from the ligand and recovering them in concentrated form in said receiving solution. The concentrated cations thus removed may be further separated and recovered by known methods. The process is useful in the removal of alkali metal, alkaline earth metal, Pb and Tl cations from a variety of source solutions such as from semiconductor, nuclear waste cleanup, metals refining, electric power, and other industrial enterprises. The invention is also drawn to the oxygen donor macrocycle-containing ligands covalently bonded through a spacer grouping to a hydrophilic inorganic solid support material.

148. 发明专利

JPH08288104A RESISTANCE MATERIAL COMPOSITION, RESISTANCE PASTE AND RESISTOR 失效
公开(公告)号：JPH08288104A
公开(公告)日：1996-11-01
申请号：JP11781795
申请日：1995-04-18
申请人： MURATA MANUFACTURING CO
发明人： NAGATA KEISUKE , TANI KOJI
IPC分类号： C01G51/00 , C01G55/00 , C03C8/14 , C04B35/14 , C04B41/50 , C04B41/87 , H01B1/16 , H01C7/00 , H01C17/065
摘要： PURPOSE: To provide resistance paste which can be baked in a neutral or reducing atmosphere and of which a resistor with a high sheet resistivity and an excellent TCR can be formed even on a low temperature sintered substrate, resistance material composition of which the resistance paste is composed and a high resistance resistor which has an excellent TCR and which is formed of the resistance paste. CONSTITUTION: Resistance material (first resistance material) which is expressed by a general formula: Cax Sr1-x RuO3 (wherein x=0.25-0.75mol) and characteristics improving additive (second resistance material) which is expressed by a formula: Lay Sr1-y CoO3 (wherein y=0.40-0.60mol) are mixed and non-reducing glassfrit and organic vehicle are added to the mixture to obtain resistance paste.

149. 发明专利

JPH08268722A PRODUCTION OF RUO2 POWDER 失效
公开(公告)号：JPH08268722A
公开(公告)日：1996-10-15
申请号：JP9581795
申请日：1995-03-30
申请人： SUMITOMO METAL MINING CO
发明人： KAWAKUBO KATSUHIRO
IPC分类号： C01G55/00
摘要： PURPOSE: To obtain RuO2 powder having satisfactory dispersibility and a narrow particle size distribution, ensuring slight dispersion in surface resistance at the time of forming a thick film resistor and imparting satisfactory noise characteristics. CONSTITUTION: A morphous ruthenium oxide hydrate is roasted at 300-1,000 deg.C to form RuO2 particles and these particles are immersed in an aq. soln. of KOH, NaOH or a KOH-NaOH mixture so prepd. that the amt. of at least one of K and Na is regulated to 0.1-10.0mol% of the amt. of RuO2 . The aq. soln. is then evaporated to form RuO2 particles coated with KOH and/or NaOH and the RuO2 particles are roasted at 200-1,000 deg.C, washed and dried.

150. 发明专利

JPH08260148A FORMATION OF THIN FILM, SEMICONDUCTOR DEVICE AND ITS PRODUCTION 失效
公开(公告)号：JPH08260148A
公开(公告)日：1996-10-08
申请号：JP6781695
申请日：1995-03-27
申请人： FUJITSU LTD
发明人： NAKABAYASHI MASAAKI
IPC分类号： C01G55/00 , C23C16/18 , C23C16/40 , C30B29/16 , H01L21/205 , H01L21/28 , H01L21/285 , H01L21/314
摘要： PURPOSE: To provide a method for forming the iridium thin film and iridium oxide thin film excellent in step surface coverage and reduced in film thickness variation by deposition, to furnish a semiconductor device using the iridium thin film or iridium oxide thin film and further to provide a method for producing the semiconductor device. CONSTITUTION: An iridium thin film or an iridium oxide thin film is formed by the chemical vapor growth method using Ir(DPM)3 as the raw material. The iridium thin film or the iridium oxide thin film excellent in coverage is formed on a substrate having a rugged surface, and the variation in the film thickness is reduced.

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