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141. 发明专利

JPS59163876A Amorphous silicon solar cell 失效
标题翻译：非晶硅太阳能电池
公开(公告)号：JPS59163876A
公开(公告)日：1984-09-14
申请号：JP3675283
申请日：1983-03-08
申请人： Agency Of Ind Science & Technol
发明人： ICHIYANAGI HAJIME , IGARASHI TADASHI , ISHII MASAYUKI , KOBAYASHI CHIYUUICHI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/075 , H01L31/03762 , Y02E10/548
摘要： PURPOSE:To improve conversion efficiency by making the concentration of boron, Al, etc. constituting a P type layer higher than that of the I type layer side on the electrode side and increasing conductivity in an amorphous silicon solar cell of P-I-N structure. CONSTITUTION:A transparent glass substrate 1, a transparent electrode film 2 and an electrode 9 are formed to an amorphous silicon layer consisting of each layer of P type conduction layer 4, I type one 5 and N type one 6. Carbon or nitrogen is added to the P type layer 4, and a P1 layer 7, to which a large amount of a IIIb group element, such as boron, Al, etc. are added, and a P2 layer 8, to which a small amount of the element is added, are formed to the layer 4. When carbon or nitrogen is added, forbidden band width can be widened, and optical absorption in the P type layer can be reduced. However, boron, Al or the like is added because the series resistance of a solar cell is generated by resistance formed on a junction surface between the P type layer and the electrode. The conductivity of the P1 layer is high and the layer is fitted to a joining with the electrode, and the forbidden band width of the P2 layer is wide and optical absorption to the P2 layer is little.
摘要翻译：目的：通过在P-I-N结构的非晶硅太阳能电池中使构成比电极侧的I型层侧的P型层的硼，Al等的浓度提高，导致非晶硅太阳能电池的电导率提高转换效率。构成：将透明玻璃基板1，透明电极膜2和电极9形成为由各层P型导电层4，I型5和N型6构成的非晶硅层。添加碳或氮向P型层4和添加了大量的诸如硼，Al等的IIIb族元素的P1层7和少量元素的P2层8 当添加碳或氮时，可以扩大禁带宽度，并且可以减少P型层中的光吸收。然而，添加硼，铝等，因为太阳能电池的串联电阻是由在P型层和电极之间的接合面上形成的电阻产生的。 P1层的导电性高，层与电极接合，P2层的禁带宽度宽，P2层的光吸收少。

142. 发明专利

JPS59163875A Amorphous silicon solar cell 失效
标题翻译：非晶硅太阳能电池
公开(公告)号：JPS59163875A
公开(公告)日：1984-09-14
申请号：JP3675183
申请日：1983-03-08
申请人： Agency Of Ind Science & Technol
发明人： ICHIYANAGI HAJIME , IGARASHI TADASHI , ISHII MASAYUKI , KOBAYASHI CHIYUUICHI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/03762 , H01L31/075 , Y02E10/548
摘要： PURPOSE:To reduce series resistance, and to improve sensitivity and efficiency by making the conductivity of an electrode side region in a P type layer higher than that on the I type layer side in an amorphous silicon solar cell of P-I-N structure in which the P type layer is arranged on the beam incident side. CONSTITUTION:A transparent glass substrate 1, a transparent conductive film 2 and a metallic electrode 9 are formed to an amorphous silicon layer 3 consisting of a P conduction type layer 4, an I conduction type layer 5 and an N conduction type layer 6. The P type layer is composed of a P1 layer 7 and a P2 layer, the quantities of carbon or nitrogen therein differ, and the quantity of carbon or nitrogen added to the P1 layer is made smaller than that to the P2 layer. The conductivity of the P1 layer is higher, and the layer is fitted to a joining with the electrode, and the forbidden band width of the P2 layer is wider, and the optical absorption of the P2 layer is little. Accordingly, the P2 layer increases conversion efficiency by a window effect, and the augmentation of series resistance is prevented by the P1 layer.
摘要翻译：目的：为了降低串联电阻，并且通过使PIN型结构的非晶硅太阳能电池中的P型层中的电极侧区域的导电性高于I型层侧的电导率区域，提高灵敏度和效率，其中P型层布置在梁入射侧。构成：由P导电型层4，I导电型层5和N导电型层6构成的非晶硅层3形成透明玻璃基板1，透明导电膜2和金属电极9。 P型层由P1层7和P2层构成，碳或氮的量不同，添加到P1层的碳或氮的量比P2层小。 P1层的电导率较高，层与电极接合，P2层的禁带宽度较宽，P2层的光吸收少。因此，P2层通过窗口效应提高转换效率，并且通过P1层防止串联电阻的增加。

143. 发明专利

JPS5935488A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5935488A
公开(公告)日：1984-02-27
申请号：JP14656182
申请日：1982-08-24
申请人： Semiconductor Energy Lab Co Ltd
发明人： YAMAZAKI SHIYUNPEI
IPC分类号： H01L31/04 , H01L31/0376 , H01L31/075
CPC分类号： H01L31/075 , H01L31/03762 , Y02E10/548
摘要： PURPOSE:To contrive to enhance optoelectric conversion efficiency at the semiconductor device constructed of non-single crystal semiconductors having P-I-N junction by a method wherein oxygen and carbon mixed in a cluster type in the I-type layer are made to extremely low concentration. CONSTITUTION:A transparently conductive film 33, and the P type silicon carbide or the P type silicon semiconductor layer 34 are formed on a glass substrate 32. Then the I-type layer 31 is formed thereon according to refined silane, and the N type semiconductor layer 35 is formed thereon. After then, a metal electrode 36 is formed on the layer 35. At this case, oxygen of the I-type layer 31 is made to 5X10 cm or less, and moreover carbon mixed in the cluster type is made to 4X10 cm or less. Accordingly, the more the oxygen and carbon are reduced, the more the conversion efficiency as the optoelectric conversion device is enhanced, and moreover reliability is improved.
摘要翻译：目的：为了提高由具有P-I-N结的非单晶半导体构成的半导体器件的光电转换效率，其中以I型层中的簇型掺杂的氧和碳被制成极低的浓度。构成：在玻璃基板32上形成透明导电膜33，P型碳化硅或P型硅半导体层34.然后，根据精制硅烷在其上形成I型层31，并且N型半导体在其上形成层35。之后，在层35上形成金属电极36.在这种情况下，I型层31的氧为5×10 18 cm -3以下，此外，以簇型混合的碳为制成4×10 18 cm -3以下。因此，氧和碳的还原越多，光电转换装置的转换效率越高，而且可靠性得到提高。

144. 发明专利

JPS599978A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS599978A
公开(公告)日：1984-01-19
申请号：JP12024382
申请日：1982-07-08
申请人： Mitsubishi Electric Corp
发明人： SATOU KAZUHIKO , NAKAMURA GENSHIROU , YAKUSHIJI HISAO
IPC分类号： H01L31/04 , H01L21/331 , H01L29/73 , H01L31/0248 , H01L31/0312 , H01L31/0376
CPC分类号： H01L31/0312 , H01L31/03765 , Y02E10/548
摘要： PURPOSE:To obtain a stable semiconductor device, which is used in behalf of amorphous Si and has excellent characteristics, by using amphous Si1-xGex, whose composition ratio is within a specified range. CONSTITUTION:In amorphous Si1-xGex which is formed by a glow discharge method, yield of distortion and degradation in photoconductivity are largely decreased with the increase in a composition ratio x. This is different from amorphous Si. Addition of a small amount of Ge gives sufficient effect. Thus the yield of the distortion and the degradation in the photoconductivity are improved by the addition of the Ge, and a band gap is also continuously changed between 1.85-1.1eV by the addition of the Ge. With the concentration of the Ge, the conductivity is increased, and the photoconductivity tends to be decreased. In the range of 0
摘要翻译：目的：通过使用组成比在规定范围内的两性Si1-xGex，获得用于代表非晶硅的稳定的半导体器件，具有优异的特性。构成：在通过辉光放电法形成的非晶Si1-xGex中，随着组成比x的增加，光导率的变形和劣化的产率大大降低。这与非晶硅不同。添加少量Ge可以产生足够的效果。因此，通过添加Ge，可以提高变形的产率和光电导性的劣化，并且通过添加Ge，带隙也在1.85-1.1eV之间连续变化。随着Ge浓度的增加，电导率增加，光电导率下降。然而，在0

145. 发明专利

JPS5779674A Multiplex battery cell with amorphous photoresponsiveness 失效
标题翻译：多电极电池与非等离子体发光二极管
公开(公告)号：JPS5779674A
公开(公告)日：1982-05-18
申请号：JP14083681
申请日：1981-09-07
申请人： Energy Conversion Devices Inc
发明人： SUTANFUOODO ROBAATO OBUSHINSUK , DEEBITSUDO ADORAA
IPC分类号： H01L31/04 , C23C14/00 , C23C14/06 , C23C14/32 , C23C16/22 , C23C16/44 , G03G5/08 , H01L21/20 , H01L29/16 , H01L31/0376 , H01L31/076 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , C23C14/0026 , C23C14/06 , C23C14/32 , C23C16/22 , H01L29/1604 , H01L31/03762 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521

146. 发明专利

JPS5779672A Photoresponsive amorphous alloy and method of producing same 失效
标题翻译：光电非晶态合金及其生产方法
公开(公告)号：JPS5779672A
公开(公告)日：1982-05-18
申请号：JP14083481
申请日：1981-09-07
申请人： Energy Conversion Devices Inc
发明人： SUTANFUOODO ROBAATO OBUSHINSUK , DEEBITSUDO ADORAA
IPC分类号： H01L31/04 , C23C14/00 , C23C14/06 , C23C14/32 , C23C16/22 , C23C16/44 , G03G5/08 , H01L21/20 , H01L29/16 , H01L31/0376 , H01L31/076 , H01L31/18 , H01L31/20
CPC分类号： H01L31/076 , C23C14/0026 , C23C14/06 , C23C14/32 , C23C16/22 , H01L29/1604 , H01L31/03762 , H01L31/18 , H01L31/202 , Y02E10/548 , Y02P70/521

147. 发明专利

JPS56162883A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS56162883A
公开(公告)日：1981-12-15
申请号：JP6622780
申请日：1980-05-19
申请人： YAMAZAKI SHUNPEI
发明人： YAMAZAKI SHIYUNPEI
IPC分类号： H01L29/73 , H01L21/205 , H01L21/331 , H01L31/0376 , H01L31/04 , H01L45/00
摘要： PURPOSE:To reduce the density of the unbalanced coupler of amorphous semiconductor by forming two semiconductors having different energy band of the same main ingredient material. CONSTITUTION:The first semiconductor of the intermediate structure of an amorphous structure having the first energy band width Eg1 and a crystalline structure and a semiconductor of the same ingredients having the second energy band Eg2 different from the first energy band stable in free energy manner are provided in a semiconductor 1, e.g., silicide such as, for example, silane (SiH4), SiF4, SiH2Cl2 or the like. A pulse current is flowed together with local light emitting in the amorphous semiconductor, unbalanced coupler is activated by heating of the recombination with the unbalanced coupler of the current due to the carrier excited by the light and is slightly rearrayed. Thus, the density of the unbalanced coupler of the amorphous semiconductor can be reduced.

148. 发明专利

JPS50134392A 失效
公开(公告)号：JPS50134392A
公开(公告)日：1975-10-24
申请号：JP3563175
申请日：1975-03-26
IPC分类号： H01L31/04 , H01L21/22 , H01L31/032 , H01L31/0376 , H01L31/074 , H01L31/10

149. 发明专利

KR102232038B1 KR102232038B1 - Selenium photomultiplier and its manufacturing method 有权
公开(公告)号：KR102232038B1
公开(公告)日：2021-03-26
申请号：KR1020187022787A
申请日：2017-01-09
申请人： 더 리서치 파운데이션 포 더 스테이트 유니버시티 오브 뉴욕
发明人： 아미르후세인 골단 , 웨이 자오
IPC分类号： H01L31/107 , H01L31/0376 , H01L31/054
CPC分类号： H01L31/0272 , H01L31/107 , G01T1/24 , H01L31/0376 , H01L31/054 , H01L31/085 , H01L31/10 , H01L31/20 , Y02E10/52
摘要： 필드 형상 멀티-웰 포토멀티플라이어 및 이의 제조방법이 제공된다. 포토멀티플라이어는 하부 절연체, a-Se 광전도층 및 상부 절연체를 포함하는 필드-형상 멀티-웰 애벌란시 검출기(field-shaping multi-well avalanche detector)를 포함한다. a-Se 광전도층은 하부 절연체와 상부 절연체 사이에 위치한다. 포토멀티플라이어의 길이를 따라 빛 상호작용 영역, 애벌란시 영역, 및 수집영역이 제공되고, 빛 상호작용 영역 및 수집영역은 애벌란시 영역의 반대편 상에 위치한다.

150. 发明专利

KR20210032649A KR20210032649A - Transparent solar cells comprising voids and for manufacturing method thereof 审中-公开
公开(公告)号：KR20210032649A
公开(公告)日：2021-03-25
申请号：KR1020190113931A
申请日：2019-09-17
申请人： 울산과학기술원
发明人： 최경진 , 강성범 , 박원진
IPC分类号： H01L31/18 , H01L31/0224 , H01L31/0236 , H01L31/0368 , H01L31/0376 , H01L31/20
CPC分类号： H01L31/1888 , H01L31/022441 , H01L31/022466 , H01L31/02366 , H01L31/0368 , H01L31/0376 , H01L31/182 , H01L31/202 , Y02E10/546 , Y02E10/547 , Y02E10/548
摘要： 본 발명은 공극을 포함하는 투명 태양전지 및 이의 제조방법에 관한 것으로, 본 발명의 일 측면은, 실리콘계 태양전지를 준비하는 단계; 상기 실리콘계 태양전지의 전면에 피막층을 형성하는 단계; 상기 피막층 상에, 포토리소그래피 공정으로 패턴층을 형성하는 단계; 상기 패턴층이 형성된 피막층 상에, 식각 영역만 노출되도록 금속층을 형성하는 단계; 상기 노출된 영역을 건식 식각법으로 식각하여, 공극을 형성하는 단계; 상기 형성된 금속층을 제거하는 단계; 및 상기 공극이 형성된 실리콘계 태양전지의 후면에 전극을 증착하는 단계;를 포함하는, 투명 태양전지의 제조방법을 제공한다.

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