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121. 发明专利

JP2003069404A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2003069404A
公开(公告)日：2003-03-07
申请号：JP2001253968
申请日：2001-08-24
申请人： Fujitsu Ltd , 富士通株式会社
发明人： KOIKE YOSHIHIKO , YOSHIDA SHUJI , YOSHIDA TETSUYA
IPC分类号： G01R31/316 , G01R31/28 , G06F1/26 , H01L21/822 , H01L27/04 , H03K17/22 , H03K17/687
CPC分类号： G06F1/26
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device that prevents an uncertain signal from being outputted at application of power so as to avoid an external circuit from malfunctioning.
SOLUTION: A processing circuit 10b receives an internal power supply supplied from an internal power supply generating circuit 10a and executes a prescribed processing. An output circuit 10c outputs a processing result of the processing circuit 10c. A control circuit 10d controls an output state of the output circuit 10c to as to bring the output state to a prescribed state when supply of an external power supply is started. A supply circuit 10e supplies the external power supply to the control circuit 10d.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种防止在施加电力时输出不确定信号以避免外部电路发生故障的半导体器件。解决方案：处理电路10b接收从内部电源产生电路10a提供的内部电源，并执行规定的处理。输出电路10c输出处理电路10c的处理结果。控制电路10d控制输出电路10c的输出状态，以便在外部电源的供给开始时使输出状态达到规定状态。供给电路10e将外部电源供给到控制电路10d。

122. 发明专利

JP2003066120A Inspection apparatus and inspection method 审中-公开
标题翻译：检查装置和检查方法
公开(公告)号：JP2003066120A
公开(公告)日：2003-03-05
申请号：JP2001253857
申请日：2001-08-24
申请人： Sony Corp , ソニー株式会社
发明人： KUDO SEIJI
IPC分类号： G01R31/316 , G01R31/28
摘要： PROBLEM TO BE SOLVED: To realize an inspection apparatus and an inspection method capable of contributing to cost reduction.
SOLUTION: Analog sinusoidal signals outputted from a low-pass filter LPF that is incorporated in an LSI 1 are A/D-converted, and at least one cycle sinusoidal data thus obtained are stored in an internal memory. Based on the program processing by a digital tester 3, the difference between at least one sinusoidal data (measurement values) stored at the internal memory and ideal sinusoidal data (ideal values) that are calculated based on an amplitude level, phase, and neutral point potential obtained from the sinusoidal data is obtained for each sample point. Then, it is judged that an LSI is acceptable when the difference for every sample point is within a reference range, and is judged that the LSI is unacceptable when either difference is not within the reference range, thus efficiently achieving measurement inspections capable of reducing the inspection man-hours and contributing to cost reduction.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：实现能够有助于降低成本的检查装置和检查方法。解决方案：从集成在LSI 1中的低通滤波器LPF输出的模拟正弦信号进行A / D转换，并且将如此获得的至少一个周期正弦数据存储在内部存储器中。基于数字测试器3的程序处理，存储在内部存储器中的至少一个正弦数据（测量值）与基于振幅电平，相位和中性点计算的理想正弦数据（理想值）之间的差异对于每个采样点获得从正弦数据获得的电位。然后，当每个采样点的差在参考范围内时，判断LSI是可接受的，并且当两个差异不在参考范围内时判断为不可接受，从而有效地实现能够减少检查工时，有助于降低成本。

123. 发明专利

JP2003050266A Test circuit for hysteresis voltage width measurement and measuring method of hysteresis voltage width by using test circuit 审中-公开
标题翻译：用于滞后电压宽度测量的测试电路和使用测试电路测量电压宽度的方法
公开(公告)号：JP2003050266A
公开(公告)日：2003-02-21
申请号：JP2001237197
申请日：2001-08-06
申请人： Matsushita Electric Ind Co Ltd , 松下電器産業株式会社
发明人： OYAMA SHIGEKI , HORI SOJI
IPC分类号： G01R31/316 , G01R19/165 , G01R31/319 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To provide a test circuit for hysteresis voltage width measurement and a measuring method of the hysteresis voltage width capable of simplifying the test circuit by dispensing with installation of a mode decoder for test signal selection, and suppressing to the minimum the increase of a chip area for the test circuit.
SOLUTION: In this test circuit for hysteresis voltage width measurement for measuring the hysteresis voltage width to a plurality of Schmidt circuits 1 installed on a semiconductor 2, all outputs of the Schmidt circuits 1 which are measuring objects are connected to a plurality of EXOR circuits 3, and a monitor terminal 5 for monitoring a test result is connected to the output of the final-layer EXOR circuit 3. When measuring the hysteresis voltage width, input values to all the Schmidt circuits 1 which are the measuring objects are fixed once at a stable voltage level, and thereafter only the input level to one Schmidt circuit 1 to be measured is changed gradually.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种用于滞后电压宽度测量的测试电路和通过分配安装用于测试信号选择的模式解码器来简化测试电路的滞后电压宽度的测量方法，并且将最小化的增加的测试电路的芯片面积。解决方案：在用于测量安装在半导体2上的多个施密特电路1的滞后电压宽度的滞后电压宽度测量用测试电路中，作为测量对象的施密特电路1的所有输出连接到多个EXOR电路3 ，并且用于监测测试结果的监视终端5连接到最终层EXOR电路3的输出。当测量滞后电压宽度时，作为测量对象的所有施密特电路1的输入值在一稳定的电压电平，此后只有一个要测量的施密特电路1的输入电平逐渐变化。

124. 发明专利

JP2003043120A Ic tester 有权
标题翻译： IC测试仪
公开(公告)号：JP2003043120A
公开(公告)日：2003-02-13
申请号：JP2001231061
申请日：2001-07-31
申请人： Yokogawa Electric Corp , 横河電機株式会社
发明人： TAKASHIMA ATSUSHI
IPC分类号： G01R31/26 , G01R31/316
摘要： PROBLEM TO BE SOLVED: To provide an IC tester capable of carrying out a test while reducing influence of noise.
SOLUTION: By means of this improved IC tester, a test signal is given to a test object, and the test object is tested according to an output from itself. This device is provided with an amplifier inputting an output from the test object, turning a phase of noise in the test signal into an opposite phase, and using an output as an output of the test object.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供能够进行测试同时减少噪声影响的IC测试器。解决方案：通过这种改进的IC测试仪，给测试对象提供测试信号，测试对象根据自身的输出进行测试。该装置具有输入来自测试对象的输出的放大器，将测试信号中的噪声相位转变成相反的相位，并且使用输出作为测试对象的输出。

125. 发明专利

JP2003043099A Method and apparatus for semiconductor test 审中-公开
标题翻译：半导体测试方法与设备
公开(公告)号：JP2003043099A
公开(公告)日：2003-02-13
申请号：JP2001234999
申请日：2001-08-02
申请人： Sony Corp , ソニー株式会社
发明人： MURAOKA MASAYUKI , NODA HIDENOBU , TOMIOKA MASAYA
IPC分类号： G01R31/26 , G01R31/28 , G01R31/30 , G01R31/316 , G01R31/319 , H01L21/822 , H01L27/04
摘要： PROBLEM TO BE SOLVED: To exactly reject defective articles by a standby current measurement in manufacturing semiconductor devices, irrespective of the production variation among wafers.
SOLUTION: A controller 21 actuates a power voltage generator 22 to generate a power voltage Vdd and apply the voltage Vdd to a terminal 17 as a test signal Vin for a test signal generator 24, then controls to gradually lower the test voltage Vin, detects the value of the test voltage Vin just when a voltage Vout outputted from a terminal 18 changes to a level H from 0, and sets a test specified value of the standby current corresponding to the test voltage Vin value, by referring to a stored corresponding table. An ammeter 23 measures the standby current of an LSI 11 and the measured value is compared with the set test specification value to evaluate the LSI 11.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：在制造半导体器件中通过待机电流测量准确地拒绝有缺陷的物品，而与晶片之间的生产变化无关。解决方案：控制器21致动电源电压发生器22以产生电源电压Vdd，并将电压Vdd施加到端子17作为测试信号发生器24的测试信号Vin，然后控制逐渐降低测试电压Vin，检测从终端18输出的电压Vout从0变为电平H时的测试电压Vin的值，并通过参照所存储的对应表来设定与测试电压Vin值对应的待机电流的测试规定值。电流表23测量LSI 11的待机电流，并将测量值与设定的测试规格值进行比较，以评估LSI11。

126. 发明专利

JP2003014825A Electric source device and test device 有权
标题翻译：电源设备和测试设备
公开(公告)号：JP2003014825A
公开(公告)日：2003-01-15
申请号：JP2001203728
申请日：2001-07-04
申请人： Advantest Corp , 株式会社アドバンテスト
发明人： FURUKAWA YASUO
IPC分类号： G01R31/316
摘要： PROBLEM TO BE SOLVED: To provide an electric source device and which is small in impedance in a signal transmission line; and a test device.
SOLUTION: An electric source device comprises a voltage source for generating a desired voltage; a current measuring element which is provided between a load and the voltage source and receives the desired voltage from the voltage source; a plurality of impedance conversion circuits which are provided respectively in parallel between the load and the current measuring element, and in which an output impedance is smaller than that of the current measuring element; and a plurality of transmission lines by which the load is electrically connected to each of the plurality of impedance conversion circuits. The impedance conversion circuit is provided between the load and the current measuring element, thereby excluding influences due to the impedance of the current measuring element on a load side.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供一种在信号传输线路中阻抗小的电源装置; 和测试设备。解决方案：电源装置包括用于产生所需电压的电压源; 电流测量元件，设置在负载和电压源之间，并从电压源接收所需的电压; 多个阻抗转换电路，其分别设置在所述负载和所述电流测量元件之间，并且其输出阻抗小于所述电流测量元件的输出阻抗; 以及多个传输线，负载与多个阻抗转换电路中的每一个电连接。阻抗转换电路设置在负载和电流测量元件之间，从而排除由于负载侧的电流测量元件的阻抗引起的影响。

127. 发明专利

JP2002365342A TESTING METHOD AND DEVICE FOR SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JP2002365342A
公开(公告)日：2002-12-18
申请号：JP2001168477
申请日：2001-06-04
申请人： RICOH KK
发明人： YANAGIHARA NOBUYUKI , AOYAMA TATSUYA , SAKAMOTO KAZUHO , YAMAGUCHI YUZO , TANAKA ATSUSHI
IPC分类号： G01R31/316 , H03M1/10 , H03M1/66
摘要： PROBLEM TO BE SOLVED: To provide a testing method for semiconductor integrated circuit device, capable of reducing the cost for testing or simplifying the function of a semiconductor testing device. SOLUTION: In this semiconductor testing method for a semiconductor integrated circuit 1 containing a D/A conversion circuit, a D/A test digital input signal is transmitted from the semiconductor testing device 1 to the measuring semiconductor integrated circuit 2, and this D/A test digital input signal is inputted synchronously to decision D/A conversion circuits 3 and 4, prepared separately from the measuring semiconductor integrated circuit. The outputs of the deciding D/A converting circuits 3 and 4 are given as reference potentials of comparison circuits 7 and 8, and the outputs of the D/A conversion circuits of the semiconductor integrated circuit 1 are given to the comparison circuits 7 and 8, to decide the quality of the D/A conversion circuit of the semiconductor integrated circuit to be tested.

128. 发明专利

JP2002350510A SEMICONDUCTOR TESTING APPARATUS 失效
公开(公告)号：JP2002350510A
公开(公告)日：2002-12-04
申请号：JP2001162173
申请日：2001-05-30
申请人： ADVANTEST CORP
发明人： SUZAWA HIDEYUKI
IPC分类号： G01R31/28 , G01R31/316 , G02F1/13
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor testing apparatus which stores data in a predetermined address of a memory without preprocessing of calculating each test to shorten a calculating time. SOLUTION: The semiconductor testing apparatus for testing an LCD driver comprises a memory map for previously designating an address for storing the data at each output pin and step voltage of the LCD driver to store the data in the address corresponding to the memory map irrespective of the capturing order of the pins and the steps of the test data.

129. 发明专利

JP2002340951A SEMICONDUCTOR DEVICE TEST SYSTEM 失效
公开(公告)号：JP2002340951A
公开(公告)日：2002-11-27
申请号：JP2001143417
申请日：2001-05-14
申请人： ANRITSU CORP
发明人： TAKAHASHI TOSHIYUKI
IPC分类号： G01R27/28 , G01R23/173 , G01R31/28 , G01R31/316 , G01R31/3183
摘要： PROBLEM TO BE SOLVED: To measure the frequency characteristics and level (power) characteristics of a semiconductor device at high speed. SOLUTION: Measuring frequencies of a signal generator 3 and each LO signal source 12 of an LO module 5 are sequentially set every time a trigger is inputted from a processing device 2. A switching means 13 sequentially and selectively switches to the LO signal source 12 set on the measuring frequency on the basis of the input of a control signal from the processing device 2. A transmitter tester 4 measures the output level of the semiconductor device by the following frequency every time the trigger of the processing device 2 is inputted. Thereafter, characteristics measurement at a predetermined frequency step is automatically executed to the last set frequency by the signal generator 3, the transmitter tester 4, the input of the trigger from the processing device 2 to the LO signal source 12, and the switching control of the switching means 13 by the processing device 2.

130. 发明专利

JP2002340949A SEMICONDUCTOR DEVICE TEST SYSTEM 失效
公开(公告)号：JP2002340949A
公开(公告)日：2002-11-27
申请号：JP2001143415
申请日：2001-05-14
申请人： ANRITSU CORP
发明人： TAKAHASHI TOSHIYUKI
IPC分类号： G01R27/28 , G01R23/16 , G01R31/28 , G01R31/316 , G01R31/3183
摘要： PROBLEM TO BE SOLVED: To measure the frequency characteristics and level (power) characteristics of a semiconductor device at high speed. SOLUTION: A data processor 25 for processing a signal from the semiconductor device DUT to be detected by a detector 24 comprises the data processor 25 provided with a plurality of pairs of A/D converter 30 for acquiring a detection signal and converting it into digital data and processors 31 for performing signal processing on the digital data converted by the A/D convertors 30. When the signal from the semiconductor device DUT is processed, an A/D converter switching means 26 is controlled in such a way as to selectively switch to any one A/D converter 30 by a control signal from a processing device 2 to parallelly process data acquisition from the detecter 24 by the A/D converter 30 and signal processing by the data processor 31 which forms a pair with the A/D converter 30.

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