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121. 发明专利

JP2009074972A Film forming process analyzer, its analysis method and memory medium 审中-公开
标题翻译：电影制作过程分析仪，分析方法和记忆媒体
公开(公告)号：JP2009074972A
公开(公告)日：2009-04-09
申请号：JP2007245003
申请日：2007-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： WADA KUNIHIKO , SENDA ITARU , NAKATANI YUJIRO , TANAKA AKIRA
IPC分类号： G01N25/18 , C23C4/12 , G01N25/04
摘要： PROBLEM TO BE SOLVED: To provide an analyzer for spraying process that can analyze flatting/solidification phenomena of spraying particles unable to easily analyze by conventional Euler method and can treat deforming behavior of multiphase material and also even pore forming process induced by incorporating surrounding gas phase that have been unanalyzable until now. SOLUTION: The analyzer, which is used for processes to form a film on a substrate by applying a thermal/kinetic energy to spraying particles, comprises an input section to input properties of spraying particles, shape and velocity of spraying particles prior to colliding the substrate, a model preparing section to exchange the spraying particles into a plurality of model particles having the same total mass with the spraying particles, a computing section to solve a dynamic equation that is expressed by a coordinate system fixed to the model particles with respect to the movement of each model particle, and an output section to represent a deforming behavior of the spraying particles from the resulting data of velocity, pressure, etc. of each model particle. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种喷雾过程分析器，其可以分析通过常规欧拉方法不易于分析的喷雾颗粒的平坦化/固化现象，并且可以处理多相材料的变形行为，甚至可以通过结合引起的成孔过程周围的气相，到现在为止尚未分析。解决方案：用于通过向喷涂颗粒施加热/动能在衬底上形成膜的分析器包括输入部分，用于输入喷雾粒子的特性，喷雾粒子的形状和速度，碰撞基板，模型准备部分，用于将喷雾颗粒与喷雾颗粒交换为具有相同总质量的多个模型颗粒;计算部分，用于求解由固定到模型颗粒上的坐标系表达的动态方程，相对于每个模型粒子的运动，以及输出部分，用于根据每个模型粒子的速度，压力等的所得数据来表示喷射粒子的变形行为。版权所有（C）2009，JPO＆INPIT

122. 发明专利

JP2007109886A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2007109886A
公开(公告)日：2007-04-26
申请号：JP2005299211
申请日：2005-10-13
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , ONOMURA MASAAKI
IPC分类号： H01S5/22
CPC分类号： H01S5/0425 , H01S5/02461 , H01S5/22 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a ridge-waveguide semiconductor laser device where a horizontally transverse mode is stabilized, and a kink is suppressed in optical output. SOLUTION: The semiconductor laser device comprises an active layer; a first-conductivity cladding layer that is provided on the active layer, and has a ridge section for composing a striped waveguide and a non-ridge section adjacent to both the sides of the ridge section; an insulating film for covering the side surface of the ridge section and the upper one of the non-ridge section; a first electrode provided at least on the ridge section and insulating film for covering the upper surface of the non-ridge section; and a pad electrode provided on the first electrode. In this case, a gap where no first electrodes exist is provided between an area on the ridge and that on the non-ridge. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种水平横向模式稳定的脊波导半导体激光装置，并且在光输出中抑制扭结。解决方案：半导体激光器件包括有源层; 设置在有源层上的第一导电性包层，具有用于构成条状波导的脊部和与脊部的两侧相邻的非脊部; 绝缘膜，用于覆盖脊部的侧表面和非脊部的上部; 至少设置在所述脊部上的第一电极和用于覆盖所述非脊部的上表面的绝缘膜; 以及设置在第一电极上的焊盘电极。在这种情况下，在脊的区域和非脊之间设置不存在第一电极的间隙。版权所有（C）2007，JPO＆INPIT

123. 发明专利

JP2006229171A Nitride semiconductor laser device and manufacturing method thereof 审中-公开
标题翻译：氮化物半导体激光器件及其制造方法
公开(公告)号：JP2006229171A
公开(公告)日：2006-08-31
申请号：JP2005044722
申请日：2005-02-21
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01S5/22
CPC分类号： H01S5/22 , H01S5/16 , H01S5/168 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a nitride semiconductor laser device having improved end face breakdown level, and to provide a method for manufacturing the nitride semiconductor laser device.
SOLUTION: The nitride semiconductor laser device comprises a first cladding layer; an active layer; a second cladding layer having a stripe-like ridge waveguide from a first end face to a second one; and a dielectric film deposited on the side of the ridge waveguide. The ridge waveguide comprises an excitation region, where the dielectric film is deposited on the side and luminescence is generated on the active layer by the injection of current from an upper electrode; a first edge region that is provided between the first end face and the excitation region, where no upper electrodes are provided and the activation rate of second-conductivity impurities in the second cladding layer is lower than that at the excitation region; and a second edge region that is provided between the second end face and the excitation region, where no upper electrodes are provided and the activation rate of second-conductivity impurities in the second cladding layer is lower than that at the excitation region.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种具有改进的端面击穿电平的氮化物半导体激光器件，并提供一种用于制造氮化物半导体激光器件的方法。解决方案：氮化物半导体激光器件包括第一覆层; 活性层第二包覆层，具有从第一端面到第二端面的条状脊状波导; 以及沉积在脊状波导侧的电介质膜。脊波导包括激发区域，其中电介质膜沉积在侧面上，并且通过从上电极注入电流在有源层上产生发光; 所述第一边缘区域设置在所述第一端面和所述激发区域之间，其中没有设置上部电极，并且所述第二覆盖层中的所述第二导电杂质的激活率低于所述激发区域的激活率; 以及第二边缘区域，其设置在所述第二端面和所述激发区域之间，其中不设置上电极，并且所述第二包层中的第二导电杂质的激活率低于所述激发区域。版权所有（C）2006，JPO＆NCIPI

124. 发明专利

JP2006148032A Semiconductor laser device 审中-公开
标题翻译：半导体激光器件
公开(公告)号：JP2006148032A
公开(公告)日：2006-06-08
申请号：JP2004339824
申请日：2004-11-25
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA
IPC分类号： H01S5/22 , H01S5/343
CPC分类号： H01S5/22 , H01S5/32341
摘要： PROBLEM TO BE SOLVED: To provide a ridge waveguide type semiconductor laser device including a local distortion reduced far field pattern (FFP).
SOLUTION: The semiconductor laser device comprises: a first clad layer of a first conduction type; an active layer; a second clad layer of a second conduction type including a stripe-like ridge waveguide extending from a first end face to a second end face; and a dielectric film having a refraction factor lower than that of the second clad layer and provided on both side faces of the ridge waveguide and in a part of an upper surface of the ridge waveguide, wherein there are provided a formation region wherein the dielectric film is formed on the upper surface of the ridge waveguide, and a non-formation region wherein the dielectric film is not formed on the upper surface of the ridge waveguide, the formation region extends from at least one of the first and second end faces in the lengthwise direction of the ridge waveguide, and the non-formation region is adjacent to the formation region and extends in the lengthwise direction of the ridge waveguide.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种包括局部失真减少远场图案（FFP）的脊波导型半导体激光器件。解决方案：半导体激光器件包括：第一导电类型的第一覆盖层; 活性层第二导电类型的第二包层，包括从第一端面延伸到第二端面的条状脊状波导; 以及电介质膜，其折射系数低于第二覆盖层的折射系数，并且设置在脊波导的两侧面和脊波导的上表面的一部分中，其中设置有形成区域，其中电介质膜形成在脊波导的上表面上，并且形成区域，其中绝缘膜不形成在脊波导的上表面上，形成区从第一和第二端面中的至少一个延伸到脊形波导的长度方向，非形成区域与形成区域相邻并且在脊状波导的长度方向上延伸。版权所有（C）2006，JPO＆NCIPI

125. 发明专利

JP2005294753A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2005294753A
公开(公告)日：2005-10-20
申请号：JP2004111260
申请日：2004-04-05
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , ONOMURA MASAAKI
IPC分类号： H01S5/22 , H01L29/22 , H01S5/34
CPC分类号： H01L33/02
摘要： PROBLEM TO BE SOLVED: To make it possible to suppress the spread of impurities from an over flow layer to an active layer and suppress the decrease in emission efficiency.
SOLUTION: The invention comprises a first conduction type first cladding layer 2 formed on a crystal substrate 1, an active layer 4 formed on the first cladding layer, a spread prevention layer 51 which is formed on the active layer and which prevents impurities from being spread to the active layer, an over flow prevention layer 5 of a second conduction type different from the first conduction type, which is formed on the spread prevention layer and which prevents the over flow of carrier poured into the activity layer, and a second conduction type second cladding layer 7 formed on the over flow prevention layer.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了可以抑制杂质从过流层扩散到活性层，并抑制发射效率的降低。解决方案：本发明包括形成在晶体基板1上的第一导电型第一包层2，形成在第一包层上的有源层4，形成在有源层上的防扩散层51，从扩展到有源层的不同于第一导电类型的第二导电类型的过流防止层5形成在防扩散层上并防止流入活性层的载流子的过度流动，以及形成在过流防止层上的第二导电型第二包覆层7。版权所有（C）2006，JPO＆NCIPI

126. 发明专利

JP2005275556A Divisive clustering device and division data count decision method 有权
标题翻译： DIVISIVE CLUSTERING DEVICE AND DIVISION DATA COUNT决策方法
公开(公告)号：JP2005275556A
公开(公告)日：2005-10-06
申请号：JP2004084711
申请日：2004-03-23
申请人： Toshiba Corp , Toshiba Solutions Corp , 東芝ソリューション株式会社 , 株式会社東芝
发明人： KOBAYASHI TOSHIHIKO , TANAKA AKIRA
IPC分类号： G06F17/30
CPC分类号： G06K9/6219
摘要： PROBLEM TO BE SOLVED: To realize divisive clustering considering features of raw data.
SOLUTION: A division data count decision processing part 14 clusters (sample clustering) sample data that are part of a set of data stored in a document DB 11. The division data count decision processing part 14 also evaluates the sample clustering results and decides a division data count from the evaluation results. A data division part 15 divides the set of data into the division data count decided by the division data count decision processing part 14. A clustering execution part 16 clusters each set of data divided by the data division part 15.
COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：考虑原始数据的特征，实现分裂聚类。解决方案：分割数据计数确定处理部分14将作为存储在文档DB 11中的一组数据的一部分的样本数据聚类（样本聚类）。分割数据计数确定处理部分14还评估样本聚类结果和从评估结果决定分割数据计数。数据分割部分15将该组数据划分为由分割数据计数判定处理部分14确定的分割数据计数。聚类执行部分16对由数据分割部分15分割的每组数据进行聚类。 C）2006，JPO＆NCIPI

127. 发明专利

JP2005155372A Thermal power plant and method for operating the same 有权
标题翻译：热电厂及其操作方法
公开(公告)号：JP2005155372A
公开(公告)日：2005-06-16
申请号：JP2003392424
申请日：2003-11-21
申请人： Toshiba Corp , Toshiba Plant Systems & Services Corp , 東芝プラントシステム株式会社 , 株式会社東芝
发明人： OIKAWA HARUTOSHI , TAO HIROYUKI , TANAKA AKIRA
IPC分类号： F01K13/02 , F01K9/00 , F01K13/00
摘要： PROBLEM TO BE SOLVED: To provide a thermal power plant and a method for operating the same capable of saving power in a plant.
SOLUTION: Since a bypass passage communicating a cooling water system and an auxiliary cooling water system, a bypass valve provided in the bypass passage, and a plant operation means operating a circulation water pump and closing the bypass valve at a time of regular operation and opening the bypass valve and stopping the circulation water pump and making cooling water in the auxiliary cooling water system flow into the cooling water system to cool a condenser when steam flowing in the condenser stops are provided, the circulation water pump is stopped and the condenser is cooled by using the cooling water pump of small power when operation of the plant is stopped such as night. Consequently, power in the plant can be greatly saved during the plant stops and effect to improve plant performance can be obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够节省电力的火力发电厂及其运行方法。解决方案：由于连通冷却水系统和辅助冷却水系统的旁路通路，设置在旁通通路中的旁通阀以及在正常运转时操作循环水泵并关闭旁通阀的设备操作装置操作和打开旁通阀并停止循环水泵，并使辅助冷却水系统中的冷却水流入冷却水系统，以在冷凝器中流动的蒸汽停止时冷凝冷凝器，循环水泵停止，当工厂的运行停止如夜间时，冷凝器通过使用小功率的冷却水泵进行冷却。因此，在工厂停电期间，能够大大节省工厂的动力，可以获得提高工厂性能的效果。版权所有（C）2005，JPO＆NCIPI

128. 发明专利

JP2005066646A Method for estimating deformation and residual stress in welded structure and apparatus therefor 审中-公开
标题翻译：用于估计焊接结构中的变形和残余应力的方法及其装置
公开(公告)号：JP2005066646A
公开(公告)日：2005-03-17
申请号：JP2003299999
申请日：2003-08-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO KAZUHIRO , TANAKA AKIRA , ITO YOSHIYASU , SAITO YUJI
IPC分类号： G01L1/00 , B23K31/00 , G01B21/32
摘要： PROBLEM TO BE SOLVED: To provide a method for estimating the deformation and residual stress in a welded structure capable of easily calculating the deformation and residual stress in the base metal of a welded structure at a higher precision even without cutting measuring parts from the base metal, and to provide a device therefor.
SOLUTION: At least one or more selected from strain, displacement and temperature before and after the application of welding in a welded structure are measured. An intrinsic strain distribution is calculated based on the measured data, and the proper value selected from the calculated intrinsic distribution is calculated, so that the deformation and residual stress in the base metal of the welded structure are obtained.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于估计焊接结构中的变形和残余应力的方法，其能够以更高的精度容易地计算焊接结构的基体金属中的变形和残余应力，即使不将切割测量部件贱金属，并提供其设备。
解决方案：测量在焊接结构中施加焊接前后的应变，位移和温度中选择的至少一种或多种。根据测量数据计算固有应变分布，并计算从计算的本征分布中选择的适当值，从而获得焊接结构的基体金属中的变形和残余应力。版权所有（C）2005，JPO＆NCIPI

129. 发明专利

JP2004330212A Analysis method for welded structure and analysis device for welded structure 审中-公开
公开(公告)号：JP2004330212A
公开(公告)日：2004-11-25
申请号：JP2003125673
申请日：2003-04-30
申请人： Toshiba Corp , 株式会社東芝
发明人： SAITO KAZUHIRO , TANAKA AKIRA , ITO YOSHIYASU , TAKAISHI KAZUTOSHI , INUKAI TAKAO , FUKUDA DAIJIRO
IPC分类号： B23K31/00 , B23K9/095 , G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide an analysis method for a welded structure and an analysis device for the welded structure which can estimate welding deformation and the residual stress with further higher accuracy when the welding deformation and the residual stress of the welded structure are analyzed by using a finite element method.
SOLUTION: The analysis method for the welded structure has a step 2 of setting welding conditions which sets the type of the welding of a weld line and heat input conditions of a welding temperature, a step 3 of dividing the set weld line to weld line elements composed of an element unit of an FEM model, a step 6 of calculating an inherent strain distribution determined corresponding to the type of the welding, a heat input amount, and the distance from the weld line regarding individual elements constituting a finite element model, a step 8 of converting the calculated inherent strain of the individual elements to at least either of the coordinate systems of the entire coordinate system of the welded structure and a local coordinate system of the element, and a step 9 of preparing FEM analysis data for imparting the inherent strain, to which coordinate conversion is executed, to the individual elements as a load condition.
COPYRIGHT: (C)2005,JPO&NCIPI

130. 发明专利

JP2004186259A Semiconductor laser device, its manufacturing method, and multiwavelength integrated semiconductor laser apparatus 审中-公开
标题翻译：半导体激光器件及其制造方法和多波长集成半导体激光器装置
公开(公告)号：JP2004186259A
公开(公告)日：2004-07-02
申请号：JP2002349033
申请日：2002-11-29
申请人： Toshiba Corp , 株式会社東芝
发明人： TANAKA AKIRA , SHIOZAWA HIDEO , WATANABE MINORU , GENEI KOUICHI , TANAKA HIROKAZU
IPC分类号： H01S5/22 , H01S5/00 , H01S5/065 , H01S5/223 , H01S5/323 , H01S5/343 , H01S5/40
CPC分类号： B82Y20/00 , H01S5/0658 , H01S5/2206 , H01S5/2231 , H01S5/34326 , H01S5/3436 , H01S5/4031 , H01S5/4087
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor laser device capable of self-lasing over a wide output region and up to a high output, and to provide its manufacturing method and a multiwavelength integrated semiconductor laser apparatus.
SOLUTION: The semiconductor laser device comprises a substrate, a first conductivity type cladding layer formed on the substrate, an active layer formed on the first conductivity type cladding layer for emitting light by current injection, a first second conductivity type cladding layer formed on the active layer, and a band shaped conductivity type cladding layer formed on the first second conductivity type cladding layer in a first direction, where the cut surface thereof perpendicular to the first direction has mutually opposing upper and lower sides and two sides connecting the upper and lower sides, and the minimum width thereof is ≥70 % of the maximum width and ≤100 % of the same. The semiconductor laser device performs self-lasing in the predetermined output region.
COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种能够在宽输出区域和高输出端上自激光的半导体激光器件，并提供其制造方法和多波长集成半导体激光装置。解决方案：半导体激光装置包括基板，形成在基板上的第一导电型包覆层，形成在第一导电型包层上的用于通过电流注入发光的有源层，形成第一导电类型包层在第一方向上形成在第一第二导电型包覆层上的带状导电型包覆层，其中垂直于第一方向的切割面具有相互相对的上下侧，两侧连接上部下侧，最小宽度为最大宽度的70％以上且≤100％。半导体激光器件在预定输出区域中执行自激光。版权所有（C）2004，JPO＆NCIPI

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