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121. 发明专利

JPH0348419A METHOD AND SYSTEM FOR CONTROLLING PRODUCTION OF THIN FILM AND METHOD AND SYSTEM FOR EXPOSURE 失效
公开(公告)号：JPH0348419A
公开(公告)日：1991-03-01
申请号：JP9644390
申请日：1990-04-13
申请人： HITACHI LTD
发明人： NAKAYAMA YASUHIKO , SHIBA MASATAKA , KOMORIYA SUSUMU
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
摘要： PURPOSE:To obtain an exposure method or the like for always stably holding a pattern size irrespective of an irregularity in various processes by radiating with a light of exposure wavelength having known illuminance, measuring timing variation in optical properties of a resist, and controlling exposure energy amount based on optimum exposure energy amount obtained from the measured result. CONSTITUTION:A region on a substrate of semiconductor or the like coating with a resist is previously radiated with a light having exposure wavelength of known illuminance, timing variation in optical properties of the resist is measured, optimum exposure energy amount is obtained based on the measured result, the exposure energy amount is controlled based on the optimum exposure energy amount to expose the substrate coated with the resist. For example, data measured by an optical property measuring system 107 is used, the data measured by an optical property measuring system 56 is corrected by a process control system 45, the optical properties of only a photoresist is extracted, and optimum exposure energy is set to form a pattern as required for the data. The exposure energy is fed back to a projection exposure unit 58 through an interface 57 for exposure.

122. 发明专利

JPH036650B2 失效
公开(公告)号：JPH036650B2
公开(公告)日：1991-01-30
申请号：JP19664584
申请日：1984-09-21
申请人： HITACHI LTD
发明人： OSHIDA YOSHITADA , SHIBA MASATAKA , NAKAJIMA NAOTO , NAKADA TOSHIHIKO
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027

123. 发明专利

JPH02167452A METHOD AND DEVICE FOR FOREIGN MATTER DETECTION 失效
公开(公告)号：JPH02167452A
公开(公告)日：1990-06-27
申请号：JP30460189
申请日：1989-11-27
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , KOIZUMI MITSUYOSHI
IPC分类号： H01L21/66 , G01N21/94 , G01N21/956
摘要： PURPOSE:To cut off reflected light from a circuit pattern speedily with simple constitution and to enable accurate detection by providing a detection system with an analyzer and a light shield means. CONSTITUTION:A substrate 21 is irradiated slantingly by a laser oscillator 27 and laser light 30 which is deflected 29 is reflected totally by a galvanomirror 28. The light reaches a mirror 32 through an f.theta lens 31 and is then made incident on the surface of the substrate 21 slantingly at a tilt angle alpha through mirrors 35a and 36a or 35b and 36b. The mirror 28 vibrates at a constant rotation speed and the lens 31 scans a laser spot 34 linearly on the surface of the substrate 21 in proportion to the angle of rotation of the mirror 28. Then detecting devices 37a and 37b which slant at a tilt angle beta to the surface of the substrate 21 almost from the scanning direction detect reflected light from foreign matter on the surface of the substrate 21 as shown by 41a and 41b and the light is converged 40a and 40b, cut off 39a and 39b, and converted 38a and 38b photoelectrically to generate electric signal proportional to the intensity of the received light.

124. 发明专利

JPS64452A DETECTION OF FOREIGN MATTER 失效
公开(公告)号：JPS64452A
公开(公告)日：1989-01-05
申请号：JP13548388
申请日：1988-06-03
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , KOIZUMI MITSUYOSHI
IPC分类号： H01L21/66 , G01N21/88 , G01N21/94 , G01N21/956 , G03F1/84 , H01L21/027 , H01L21/30
摘要： PURPOSE:To make detection more exactly by mounting a means for preventing deposition of foreign matter which is formed with a pellicle on a frame to a substrate, scanning the polarized light which is condensed and projected relatively on the substrate, condensing the light reflected from the foreign matter by a condensing optical system and converting the light to a signal. CONSTITUTION:The laser light 30 from a laser oscillator 27 is linearly polarized by a polarizing element 29 and the polarized light is reflected by a galvanomirror 28 connected to a motor 34 so as to arrive at a mirror 32 via an f.theta lens 31. The light 30 is entered at an angle alpha of inclination to the substrate 21 via mirrors 35a, 36a or mirrors 35b, 36b. Detecting devices 37a and 37b consisting of a detector 41a which detects the linearly polarized light, a condenser lens 40a, a slit-shaped light shielding device 39a, and a photoelectric converting element 38a are then disposed perpendicularly to the laser light 30a, 30b and at an angle beta of inclination with the substrate 21 to detect the foreign matter on the substrate 21. The polarized light 30 is, therefore, used and detector 41a, the device 39a, etc., are provided, by which the exact detection is executed with high sensitivity.

125. 发明专利

JPS63128205A REDUCED PROJECTION TYPE ALIGNMENT SYSTEM 失效
公开(公告)号：JPS63128205A
公开(公告)日：1988-05-31
申请号：JP27399686
申请日：1986-11-19
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , OSHIDA YOSHITADA , SHIBA MASATAKA
IPC分类号： G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To execute an alignment with stable and high accuracy by deriving the center position of an alignment pattern from the shape variation position of an interference pattern, and eliminating the drop of the alignment accuracy caused by the applied film thickness and the uneven application of a photoresist. CONSTITUTION:An illuminating light beam 41 from a coherence light source 40 is separated into two directions by a beam splitter 42, and one of them becomes an illuminating light beam 43 and radiates an alignment pattern 48 through a reduced projection lens 2, and the other is made incident on a semitransparent mirror 51. Subsequently, in accordance with a relative inclination in the optical axis direction of a wave front of reflected light 52 from the mirror 51, and the wave front of the reflected light from an interface 47 of a step difference pattern of Si 45 and a photoresist 46, a fringe pattern is generated. The fringe pattern is generated due to the influence of an interference of the reflected light 50 and 52,and a large signal variation caused by a fact that the phase is varied by step difference depth (e) in the step difference part of the pattern 48 is obtained. Accordingly, the influence of an interference caused by film thickness d(x) of the photoresist 46 is reduced relatively, and the alignment can be executed with stable and high accuracy.

126. 发明专利

JPS6375603A ALIGNMENT SYSTEM 失效
公开(公告)号：JPS6375603A
公开(公告)日：1988-04-06
申请号：JP21961186
申请日：1986-09-19
申请人： HITACHI LTD
发明人： AONUMA TOYOKO , SHIBA MASATAKA , NAKADA TOSHIHIKO , MORIOKA HIROSHI , OSHIDA YOSHITADA
IPC分类号： G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30
摘要： PURPOSE:To always stably perform the detection of a low difference in level pattern, by changing the incident angle of irradiation laser beam and selecting the incident angle max. in the detection signal contrast of a target pattern to perform chip alignment on and after. CONSTITUTION:The beam emitted from a laser 30 is deflected by a galvanomirror 31 and passes through optical systems 32-36 and a mask 2 to be allowed to irradiate a wafer target mark 5 in the vicinity of each chip 4 of a wafer 3 through a contracting lens 6. The mirror 3 and the mark 5 are in conjugated relation and, when the mirror 31 is rotated, the incident angle of the laser beam 21 to the wafer changes. The reflected beam from the target mark passes through the original beam path to reach a cylindrical lens 37 and a linear sensor 38. The detected wave form is converted by an A/D converter 39 to be sent to a computer 40 and the incident angle max. in signal contrast is selected and the output thereof controls the angle of deflection of the mirror 31 and this angle of deflection is used in the alignment at every chip on and after then.

127. 发明专利

JPS63777B2 失效
公开(公告)号：JPS63777B2
公开(公告)日：1988-01-08
申请号：JP16507683
申请日：1983-09-09
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , NAKAGAWA YASUO , OSHIDA YOSHISADA , KOIZUMI MITSUYOSHI , SHIBA MASATAKA , UTO YUKIO
IPC分类号： G03F1/00 , G03F1/62 , G03F1/64 , H01L21/027

128. 发明专利

JPS6175522A Semiconductor exposure apparatus 失效
标题翻译：半导体曝光装置
公开(公告)号：JPS6175522A
公开(公告)日：1986-04-17
申请号：JP19664584
申请日：1984-09-21
申请人： Hitachi Ltd
发明人： OSHIDA YOSHISADA , SHIBA MASATAKA , NAKAJIMA NAOTO , NAKADA TOSHIHIKO
IPC分类号： H01L21/30 , G03F9/00 , H01L21/027
CPC分类号： G03F9/7049
摘要： PURPOSE:To expose the entire part of wafer within a short period by aligning the wafer with high accuracy by focusing lens for exposure and immediately exposing it at the aligned position. CONSTITUTION:When external shape of chip changes to 21B from 21A, external shape of reticle circuit also changes to 11B0 from 11A0. Thereby, reticle target mark also moves to 121B from 121A1. For the alignment at the exposing position using this target mark 121B, the entire part of alignment detecting means is moved almost for DELTA2 in the y direction/ by the alignment detecting means moving mechanism. Thereby, the alignment at the exposure position becomes possible through alignment between target marks 221A1 and 121A1.
摘要翻译：目的：通过聚焦透镜进行曝光并立即将其暴露在对准位置，通过高精度对准晶片，在短时间内暴露晶片的整个部分。构成：当外部形状从21A变为21B时，标线电路的外形也从11A0变为11B0。因此，标线板目标标记也从121A1移动到121B。对于使用该目标标记121B的曝光位置的对准，对准检测装置的整个部分通过对准检测装置移动机构在y方向上几乎移动DELTA2。因此，通过目标标记221A1和121A1之间的对准，曝光位置处的对准变得可能。

129. 发明专利

JPS60245223A ALIGNMENT PATTERN DETECTOR FOR REDUCED PROJECTION EXPOSING APPARATUS 失效
公开(公告)号：JPS60245223A
公开(公告)日：1985-12-05
申请号：JP10051784
申请日：1984-05-21
申请人： HITACHI LTD
发明人： NAKADA TOSHIHIKO , OSHIDA YOSHISADA , SHIBA MASATAKA
IPC分类号： H01L21/30 , G03F7/20 , H01L21/027
摘要： PURPOSE:To reduce random noise of detected signal, by compressing effectively two-dimensional reflected light intensity distribution into one-dimensional light intensity distribution in the pattern position detecting direction. CONSTITUTION:A two-dimensional reflected light intensity distribution developped on a two-dimensional array solid-state pick-up device 36 from the wafer target pattern includes two-dimensional random noise. Therefore, compressing this two-dimensional light intensity distribution in the direction perpendicular to the pattern position detecting direction results in a one-dimensional light intensity distribution caused the random noise to reduce in the pattern position detecting direction. In this way, the two-dimensional reflected light intensity distribution including random noise can be compressed into the one-dimensional light intensity distribution in the pattern position detecting direction, so that the random noise can be reduced extremely to improve the alignment pattern detecting precision.

130. 发明专利

JPS60222756A FOREIGN MATTER INSPECTOR 失效
公开(公告)号：JPS60222756A
公开(公告)日：1985-11-07
申请号：JP7752684
申请日：1984-04-19
申请人： HITACHI LTD
发明人： UTO YUKIO , SHIBA MASATAKA , OSHIDA YOSHISADA
IPC分类号： G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66
摘要： PURPOSE:To enable accurate detection of a foreign matter existing on the surface to be inspected by scanning the surface of an object being inspected with a light beam spot to monitor a scattering light. CONSTITUTION:A laser light from a laser oscillator 14 is focused in the center of a galvanomirror 17 oscillating in a triangular wave via a plarization plate 16 and a condenser lens 15. After totally reflected therefrom, the laser light enters the surface of a foreign matter attachment prevention film 23 slantly as laser spot via a collimater lens 18. The laser spot scans over the surface of the foreign matter attachment prevention film 23 at a fixed speed. The laser spot on the scan line 22 forms an image on a one-dimensional linear sensor 27 through a polaroid prism 25 and an image formation lens 26 to be detected. Induction takes place on the one-dimensional linear sensor 27 at each reflection position of the laser spot and a detection signal is outputted corresponding to the position of the induction.

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