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111. 发明专利

JP5381696B2 Circuit board stacked module and electronic equipment 有权
公开(公告)号：JP5381696B2
公开(公告)日：2014-01-08
申请号：JP2009296070
申请日：2009-12-25
申请人：ソニー株式会社
发明人：眞仁六波羅 , 修一岡 , 一治松本 , 周作柳川
IPC分类号： H01L25/00 , H01L23/12 , H04B1/08
CPC分类号： H01L24/48 , H01L23/552 , H01L23/645 , H01L23/66 , H01L25/16 , H01L25/162 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2924/00011 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/0102 , H01L2924/01029 , H01L2924/01033 , H01L2924/01041 , H01L2924/01057 , H01L2924/01058 , H01L2924/01075 , H01L2924/01078 , H01L2924/01082 , H01L2924/12034 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2224/45099 , H01L2224/05599 , H01L2924/00 , H01L2924/00012
摘要： A device that comprises a plurality of circuit elements on a substrate; a shielding element between at least two of the plurality of circuit elements; and a bonding element that electrically connects the shielding element to a grounding circuit of a semiconductor chip that is on the substrate.

112. 发明专利

JP5378800B2 Lead frame, a semiconductor device equipped with the manufacturing method and the lead frame 有权
公开(公告)号：JP5378800B2
公开(公告)日：2013-12-25
申请号：JP2008550142
申请日：2007-12-17
申请人：シーマ電子株式会社
发明人：憲夫小嶋 , 昭弘窪田 , 義人高松 , 友章石垣 , 正夫佐久間 , 恵美子杉本 , 達也目黒
IPC分类号： H01L23/50
CPC分类号： H01L23/49558 , H01L24/48 , H01L24/49 , H01L2224/05554 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/49171 , H01L2924/00014 , H01L2924/01004 , H01L2924/01019 , H01L2924/01021 , H01L2924/01046 , H01L2924/01057 , H01L2924/01078 , H01L2924/15747 , H01L2924/181 , H01L2924/3011 , H01L2924/00 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： [PROBLEMS] To provide a lead frame having improved mechanical strength of an inner lead, a method for manufacturing such lead frame and a semiconductor device having such lead frame mounted thereon. [MEANS FOR SOLVING PROBLEMS] A lead frame is provided with a frame; a die pad support bar extending toward the center from the frame; a die pad fixed to the center of the frame by the die pad support bar; and a plurality of inner leads whose leading end side extends toward the center of the frame from the frame. A rigidity reinforcing section is arranged on the leading end portion of the inner lead. The rigidity reinforcing section is fixed with a resin, at a portion where an interval between the adjacent inner leads is 170µm or less, and the leading end periphery on the frame center side is arranged at a position 1.2mm or less from the leading end periphery of the inner lead, and a resin liquid applied on the rear surface side of the wire bonding surface of the inner lead is firmly fixed in a gap between the adjacent inner leads.

113. 发明专利

JP5375307B2 Semiconductor device 有权
公开(公告)号：JP5375307B2
公开(公告)日：2013-12-25
申请号：JP2009105173
申请日：2009-04-23
申请人：株式会社村田製作所
发明人：孝幸筒井 , 秋重中島
IPC分类号： H01L21/822 , H01L21/338 , H01L25/04 , H01L25/18 , H01L27/04 , H01L27/095 , H01L29/778 , H01L29/812 , H03K17/693 , H04B1/44
CPC分类号： H01L2224/48137 , H01L2224/49111 , H01L2224/49175 , H01L2924/12032 , H01L2924/1305 , H01L2924/13091 , H01L2924/3011 , H01L2924/30111 , H01L2924/3025 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a technique capable of suppressing generation of higher-order harmonic distortion in transmitting. SOLUTION: ON-resistance Ron of a transistor having changed from an OFF state to an ON state can be reduced by increasing an electric potential Vgs1 of the transistor in an OFF state from -Vant to -Vant+1. In other words, the ON-resistance Ron of the transistor having changed from an OFF state to an ON state can be reduced by decreasing the absolute value of the electric potential Vgs1 of the transistor in an OFF state from Vant to Vant-1. As a result, an increase in higher-order harmonic distortion generated from the transistor in an ON state can be suppressed. COPYRIGHT: (C)2011,JPO&INPIT

114. 发明专利

JP5369544B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP5369544B2
公开(公告)日：2013-12-18
申请号：JP2008221412
申请日：2008-08-29
申请人：富士通株式会社
发明人：陽一鎌田 , 直哉岡本
IPC分类号： H01L21/768 , H01L21/28 , H01L21/338 , H01L23/532 , H01L29/417 , H01L29/423 , H01L29/778 , H01L29/812
CPC分类号： H01L23/4821 , H01L23/4824 , H01L23/4827 , H01L2924/0002 , H01L2924/3011 , H01L2924/00
摘要： A semiconductor device includes a first wiring (14) extending in a first direction and a second wiring (12) extending in a second direction which crosses the first direction and being disposed with a space interposed between the first wiring and the second wiring, and including a tantalum layer, a tantalum nitride layer formed over the tantalum layer, and a metal layer formed over the tantalum nitride layer.

115. 发明专利

JP5368090B2 Thermal conductivity grease 有权
公开(公告)号：JP5368090B2
公开(公告)日：2013-12-18
申请号：JP2008525099
申请日：2006-07-28
申请人：スリーエムイノベイティブプロパティズカンパニー
发明人：ティー．アンダーソン，ジェフリー , イー．ケンダル，フィリップ
IPC分类号： C10M171/06 , C09K5/08 , C10M125/02 , C10M125/04 , C10M125/10 , C10M125/20 , C10M125/26 , C10M171/02 , C10M177/00 , C10N10/02 , C10N10/04 , C10N10/06 , C10N10/12 , C10N10/16 , C10N20/06 , C10N30/00 , C10N40/06 , C10N50/10 , C10N70/00
CPC分类号： C09K5/14 , C10M169/00 , C10M169/06 , C10M2201/041 , C10M2201/06 , C10M2201/062 , C10M2201/10 , C10M2201/105 , C10M2207/125 , C10M2207/24 , C10M2207/282 , C10M2207/283 , C10M2207/30 , C10M2209/084 , C10M2209/11 , C10M2215/06 , C10M2215/221 , C10M2219/044 , C10N2210/02 , C10N2210/03 , C10N2210/06 , C10N2220/082 , C10N2240/20 , C10N2250/10 , H01L23/3737 , H01L2924/0002 , H01L2924/3011 , Y10T428/263 , Y10T428/268 , Y10T428/31663 , H01L2924/00
摘要： The invention relates to thermally conductive greases that may contain carrier oil(s), dispersant(s), and thermally conductive particles, wherein the thermally conductive particles are a mixture of at least three distributions of thermally conductive particles, each of the at least three distributions of thermally conductive particles having an average (D50) particle size which differs from the other average particle sizes by at least a factor of 5.

116. 发明专利

JP5366886B2 Semiconductor device and a method of manufacturing the same 有权
公开(公告)号：JP5366886B2
公开(公告)日：2013-12-11
申请号：JP2010128059
申请日：2010-06-03
申请人：パナソニック株式会社
发明人：真北畠 , 修楠本 , 正雄内田 , 邦方高橋 , 賢哉山下
IPC分类号： H01L29/78 , H01L21/336 , H01L21/76 , H01L23/495 , H01L25/07 , H01L27/04 , H01L29/06 , H01L29/12 , H01L29/24
CPC分类号： H01L23/49562 , H01L23/49575 , H01L23/62 , H01L24/37 , H01L24/40 , H01L24/45 , H01L24/48 , H01L24/49 , H01L25/072 , H01L29/0653 , H01L29/1608 , H01L29/7806 , H01L29/7828 , H01L29/7838 , H01L2224/0603 , H01L2224/371 , H01L2224/40137 , H01L2224/45015 , H01L2224/45124 , H01L2224/48091 , H01L2224/4813 , H01L2224/48137 , H01L2224/48247 , H01L2224/48465 , H01L2224/4903 , H01L2224/49113 , H01L2224/84205 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/09701 , H01L2924/10253 , H01L2924/10272 , H01L2924/12032 , H01L2924/12036 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13062 , H01L2924/13063 , H01L2924/13091 , H01L2924/181 , H01L2924/2076 , H01L2924/3011 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor module comprises independently operable segments 1 (semiconductor elements) on a SiC substrate. Each segment 1 comprises a source electrode pad 2 and a gate electrode pad 3 both provided to the principal surface side of the SiC substrate, and a drain electrode pad provided on the back surface side of the SiC substrate. The semiconductor module further comprises an isolation region such as a trench or a Schottky diode for electrically isolating the adjacent segments 1 from each other. Only electrode pads 2 and 3 of each of the segments 1 determined as conforming items by a test are connected to electrode terminals 41 and 43, respectively.

117. 发明专利

JP5362548B2 Sensor 有权
公开(公告)号：JP5362548B2
公开(公告)日：2013-12-11
申请号：JP2009505450
申请日：2007-04-10
申请人：アレグロ・マイクロシステムズ・エルエルシー
发明人：テイラー，ウィリアム・ピー , ヴィグ，ラヴィ
IPC分类号： H01L21/822 , G01R33/07 , H01L27/04 , H01L43/06 , H01L43/08
CPC分类号： H01L27/22 , H01L23/5223 , H01L25/16 , H01L27/0805 , H01L2224/05554 , H01L2224/0603 , H01L2224/48091 , H01L2224/48137 , H01L2224/48247 , H01L2224/48257 , H01L2924/09701 , H01L2924/3011 , H01L2924/00014
摘要： An integrated circuit comprises a plurality of layers including a first substrate with an on chip capacitor and a second substrate. In one embodiment, the second substrate has an on chip capacitor. The first and/or second substrate can include a sensor element, such as a magnetic sensor element.

118. 发明专利

JP5360674B2 Integrated circuit device and electronic equipment 有权
公开(公告)号：JP5360674B2
公开(公告)日：2013-12-04
申请号：JP2008164129
申请日：2008-06-24
申请人：セイコーエプソン株式会社
发明人：和丈松本
IPC分类号： H01L21/822 , H01L21/82 , H01L27/04
CPC分类号： H01L24/06 , H01L2224/05554 , H01L2224/48091 , H01L2224/49175 , H01L2924/14 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide an integrated circuit device which can be reduced in cost even when an oscillation circuit is built in, and to provide an electronic apparatus. SOLUTION: The integrated circuit device 10 includes a substrate, a plurality of I/O(input/output) cells disposed on an I/O cell region provided along an edge portion of the substrate, and an oscillation circuit block disposed in the I/O cell region and having an oscillation circuit, wherein the oscillation circuit block is disposed in a disposition region including the corner regions of the substrate in the I/O cell region. COPYRIGHT: (C)2010,JPO&INPIT

119. 发明专利

JP5352551B2 Semiconductor device 有权
公开(公告)号：JP5352551B2
公开(公告)日：2013-11-27
申请号：JP2010199745
申请日：2010-09-07
申请人：ルネサスエレクトロニクス株式会社
发明人：忠敏団野 , 徹長峰 , 博志森 , 吏市ノ瀬
IPC分类号： H01L23/12
CPC分类号： H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/49171 , H01L2924/01019 , H01L2924/14 , H01L2924/15311 , H01L2924/19041 , H01L2924/3011 , H01L2924/3025 , H01L2924/00 , H01L2924/00014

120. 发明专利

JP2013235913A Package for high frequency semiconductor 有权
标题翻译：高频半导体封装
公开(公告)号：JP2013235913A
公开(公告)日：2013-11-21
申请号：JP2012106610
申请日：2012-05-08
申请人： Toshiba Corp , 株式会社東芝
发明人： TAKAGI KAZUTAKA
IPC分类号： H01L23/02 , H01L23/04
CPC分类号： H01L2224/48091 , H01L2224/49175 , H01L2924/12032 , H01L2924/1305 , H01L2924/1461 , H01L2924/16195 , H01L2924/19107 , H01L2924/3011 , H01L2924/30111 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a package for a high frequency semiconductor which improves the electric power resistance (current capacity) and reduces reflection loss without impairing band characteristics.SOLUTION: A package for a high frequency semiconductor includes: a metal wall 16 disposed on a conductor base plate 200 and including a semiconductor device therein; feed through lower layer parts 20 and feed through upper layer parts 22s which fit in through holes provided at an input/output part of the metal wall and disposed on the conductor base plate; feed through strip lines 19f, each of which is disposed between the feed through lower layer part and the feed through upper layer part and has impedance equal to or lower than characteristic impedance; impedance conversion circuits 19c, each of which is disposed at the exterior of the metal wall and converts the characteristic impedance into impedance of the feed through strip line; and leads 21 connected with the impedance conversion circuits.
摘要翻译：要解决的问题：提供一种提高耐电力（电流容量）并降低反射损耗的高频半导体封装，而不损害带的特性。解决方案：用于高频半导体的封装包括：金属壁16，设置在导体基板200，其中包括半导体器件; 通过下层部件20进给，并且通过上层部件22s进给，该上层部件22s装配在设置在金属壁的输入/输出部分上并设置在导体基板上的通孔中; 通过带状线19f进给，每个条线布置在通过下层部分的进料和通过上层部分的进料之间，并具有等于或低于特性阻抗的阻抗; 阻抗转换电路19c，其各自设置在金属壁的外部，并将特性阻抗转换成通过带状线的馈送的阻抗; 以及与阻抗转换电路连接的引线21。

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