专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

101. 发明专利

JPS62115732A WIRE BONDER 失效
公开(公告)号：JPS62115732A
公开(公告)日：1987-05-27
申请号：JP25471685
申请日：1985-11-15
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , MIKINO HIROSHI
IPC分类号： H01L21/60
摘要： PURPOSE:To apply stable ultrasonic energy to a bonding section at all times even when the surface of a tab is strained by forming a tab support section for a wire bonder in structure in which the height of the tab support section can be adjusted. CONSTITUTION:A bonding stage on which a lead frame, to a tab 13 thereof as a pellet fitting section for a semiconductor pellet 12 the semiconductor pellet 12 is fitted, is placed and fixed is formed to the upper surface of a heat block, and a tab support section 14 shaping one part of the bonding stage is formed by a body separate from the heat block. The tab support section 14 is engaged into a recessed section 1a shaped to the heat block 1, and fastened firmly by a fixed screw 15 screwed to a female screw hole 1b formed at the center of the bottom of the recessed section 1a. In a wire bonder, a tab hanging lead 13a is held down by a jig 17, and projections 14a can be applied accurately to the corner sections of the tab 13.Since the partial height of the tab support section 14 can be adjusted by an adjusting screw in addition to that, height is adjusted previously even when there is minute strain in the tab 13, thus supporting and fixing the tab 13 more precisely.

102. 发明专利

JPS61139050A Lead frame 失效
标题翻译：领导框架
公开(公告)号：JPS61139050A
公开(公告)日：1986-06-26
申请号：JP26074184
申请日：1984-12-12
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , KITAMURA WAHEI , MIKINO HIROSHI
IPC分类号： H01L23/50 , H01L23/495
CPC分类号： H01L23/49582 , H01L2224/48 , H01L2224/48247 , H01L2224/49 , H01L2224/49171 , H01L2224/85439 , H01L2924/01078 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： PURPOSE:To prevent separation of a resin and a lead frame at an interface due to shearing force at the time of sealing and the like, by forming a Cu oxide film on the surface of the lead frame. CONSTITUTION:Copper (Cu) is plated on the surface of a lead frame part 1, which is sealed by a resin. Or the frame is heated in an oxygen atmosphere after the Cu plating, and a Cu oxide film is formed. The Cu film formed by the Cu plating or the Cu oxide film has excellent adhesion with the resin. Intrusion of moisture through the interface between the lead frame 1 and the resin is prevented. Since the Cu plated film or the Cu oxide film does not impair the solderability of Ag plating and the like, the film can be applied on the entire surface of the lead frame. Since the Cu plating is used, the cost can be made low.
摘要翻译：目的：通过在引线框架的表面上形成Cu氧化膜，防止由于密封等时的剪切力而在界面处分离树脂和引线框架。构成：将铜（Cu）电镀在由树脂密封的引线框架部分1的表面上。或者在镀铜后在氧气氛中加热框架，形成Cu氧化膜。由Cu镀层或Cu氧化膜形成的Cu膜与树脂的粘合性优异。防止了通过引线框架1和树脂之间的界面侵入水分。由于Cu镀膜或Cu氧化物膜不会损害Ag电镀等的可焊性，因此可以将膜施加在引线框架的整个表面上。由于使用了Cu电镀，所以可以降低成本。

103. 发明专利

JPS61125059A Lead frame and semiconductor device using the lead frame 失效
标题翻译：引导框架和使用引线框架的半导体器件
公开(公告)号：JPS61125059A
公开(公告)日：1986-06-12
申请号：JP24598784
申请日：1984-11-22
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , MIKINO HIROSHI
IPC分类号： H01L23/50 , H01L21/60 , H01L23/495
CPC分类号： H01L23/495 , H01L23/49558 , H01L2224/45 , H01L2224/45124 , H01L2224/48 , H01L2224/48247 , H01L2224/73265 , H01L2924/01013 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PURPOSE:To improve wire bonding property of leads, by sticking an insulating plate to the tab of a lead frame and one surface of inner leads. CONSTITUTION:A package is formed by molding epoxy resin 1. A pellet 4 is attached to a tab 2 at the approximately central part of the package through a so-called silver paste 3. The pellet 4 is electrically connected to the inner end part of leads 7 through a bonding pad 5 and aluminum wire 6. Each lead 7 is bent downward in the vicinity of the side edge of the package. Polyimide resin, which is an insulating plate 8, is stuck to the back surface part, which is one surface of a part of the tab 2 and the inner leads, by bonding agent, tackifier and the like.
摘要翻译：目的：通过将绝缘板粘贴在引线框架的突片和内引线的一个表面上，以提高引线的引线接合性能。构成：通过模制环氧树脂1形成包装。颗粒4通过所谓的银浆3在包装的大致中央部分处附接到突片2上。颗粒4电连接到包装的内端部分引线7通过接合焊盘5和铝线6.每个引线7在封装的侧边缘附近向下弯曲。作为绝缘板8的聚酰亚胺树脂通过粘合剂，增粘剂等粘附到作为突片2的一部分的一个表面的内表面部分和内部引线。

104. 发明专利

JPS60177666A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60177666A
公开(公告)日：1985-09-11
申请号：JP3243384
申请日：1984-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI , KITAMURA WAHEI , SAKAMOTO DAIJI
IPC分类号： H01L21/60 , C22C21/00 , H01L23/49
摘要： PURPOSE:To prevent corrosion and to connect positively, by including Ni in a wire mainly containing Al and by selecting Vickers hardness of the ball among the area of 35-45. CONSTITUTION:Ni is mainly effective in order to improve corrsion resistance of a wire 4 which mainly contains Al, and addition of Mn, Mg, Si, Fe, etc. is effective in order to control harndness of the ball. Moreover, these elements do not spoil the effects of the corrosion resistance and hardness control each other. Mn of 0.5 or 1.0% for Ni of 1%, Mn of 1.0 for Ni of 0.5% or Mg of 1.7% and Fe of 0.5% for Ni of 0.5%, or Si of 2% or 1% for Ni of 2%, each represented in wt%, is mixed. By using the Al-alloy wire with such a composition, better corrosion resistance, Vickers hardness of the ball of 35-45, and sufficient strength connecting the wire are attained. Moreover, reliable connection without over-crushing or pad damage is possible with much lower cost than Au wire.

105. 发明专利

JPS60177637A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS60177637A
公开(公告)日：1985-09-11
申请号：JP3243484
申请日：1984-02-24
申请人： HITACHI LTD , HITACHI METALS LTD
发明人： OKIKAWA SUSUMU , KITAMURA WAHEI , SUZUKI HIROMICHI , MIKINO HIROSHI , SAKAMOTO DAIJI
IPC分类号： H01L21/60 , C22C21/00 , H01L23/49
摘要： PURPOSE:To contrive improve the reliability of products of semiconductor device by a method wherein the breaking strength of the junction wires at a time after the device was sealed in a package is selected to a strength of more than about 6gr per wire of a diameter of 30mum and the breaking of the wires are prevented by the enhanced breaking strength. CONSTITUTION:During the manufacture of a semiconductor device sealed in a ceramic package, junction wires 4 mainly constituting of Al are inevitably performed an annealing for a 10min at 400-500 deg.C and the temperature of the Al wires 4 reaches the recrystallization temperature or a temperature close to it, though the temperature is different according to materials used for making the Al wires 4. Meanwhile, the strength of a wire at a time before an annealing is performed to the wire depends upon the work degree and the material used for making the wire and the strength of the wire at a time after an annealing was performed depends upon the material used for making the wire, but when the wire was subjected to an annealing at a temperature near the recrystallization temperature, the fast that the strength of the wire depends on the past record of the wire is lost. When the breaking strength of a wire is selected to a strength of more than about 20gr per wire of a diameter of 30mum at a time before the semiconductor device is sealed in the package, the breaking strength of the wire can be secured being needed for the wire drawing working, and when the breaking strength of the wire is selected to a strength of more than about 6gr per wire of a diameter of 30mum at a time after the semiconductor device was sealed in the package (after an annealing was performed), the breaking strength of the wire can be ensured in a mechanical strength endurable fully against breaking. As a result, the reliability of products of semiconductor device can be secured.

106. 发明专利

JPS5979539A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5979539A
公开(公告)日：1984-05-08
申请号：JP18901282
申请日：1982-10-29
申请人： Hitachi Ltd
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI , MIKINO HIROSHI , KITAMURA WAHEI
IPC分类号： H01L23/50 , H01L21/60
CPC分类号： H01L2224/05624 , H01L2224/32225 , H01L2224/32245 , H01L2224/45 , H01L2224/45124 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48465 , H01L2224/48724 , H01L2224/48755 , H01L2224/73265 , H01L2224/85 , H01L2224/85455 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01028 , H01L2924/01029 , H01L2924/01079 , H01L2924/15153 , H01L2924/15165 , H01L2924/181 , H01L2924/00014 , H01L2224/78 , H01L2924/00012 , H01L2924/00 , H01L2924/013
摘要： PURPOSE:To eliminate the need for the use of Au, and to reduce cost by bonding one tip of an Al or Al alloy wire with the pad of a pellet and bonding the other tip on an Ni or Ni group metal plated film formed on a mounting substrate. CONSTITUTION:The upper section of a Cu wiring 2 on the glass epoxy substrate 1 is plated with Ni or plated 9 with Ni containing not less than 0.1% P. One of the tips of the Al or Al alloy wires 10 containing 1% Si is connected to the Al pad of the pellet 5, and the other tip is bonded to the plated film 9 of the substrate 1. The wires and the pellet are sealed with an epoxy resin. The cost of the device is reduced largely because no Au material is used.
摘要翻译：目的：为了消除对使用Au的需要，并且通过将Al或Al合金线的一个尖端与芯片的焊盘接合并将另一个尖端接合在形成在金属的Ni或Ni组金属电镀膜上而降低成本安装基板。构成：在玻璃环氧基板1上的Cu布线2的上部用Ni或镀9，Ni含有不少于0.1％的P。含有1％Si的Al或Al合金线10的尖端之一是连接到颗粒5的Al垫，另一个末端接合到基板1的镀膜9.电线和颗粒用环氧树脂密封。由于不使用Au材料，装置的成本大大降低。

107. 发明专利

JPS5967642A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：JPS5967642A
公开(公告)日：1984-04-17
申请号：JP17765982
申请日：1982-10-12
申请人： Hitachi Ltd
发明人： SUZUKI HIROMICHI , MIKINO HIROSHI , KITAMURA WAHEI
IPC分类号： C22C21/00 , H01L21/60
CPC分类号： H01L24/73 , H01L2224/32245 , H01L2224/45 , H01L2224/45124 , H01L2224/48247 , H01L2224/48465 , H01L2224/73265 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01079 , H01L2924/01082 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2924/013
摘要： PURPOSE:To improve the corrosion resistance of an aluminum group wire while maintaining the low cost property of the wire, and to prevent disconnection due to corrosion by using the wire consisting of aluminum, silicon and copper. CONSTITUTION:The wire 6 contains 1-10% Si and 1-10% Cu besides Al. The range of the content of Si is selected because Si itself is hard, the flexibility of the wire lowers when the content exceeds 10%, and an effect of improving the corrosion resistance of the wire by the mixing of Si is not displayed sufficiently when it is less than 1%. On the other hand, the range of the content of Cu is limited because the corrosion resistance of the wire is not improved sufficiently when the content is less than 1%, and the elongation of the wire lowers and corrosion resistance and stress-resisting property deteriorate when it exceeds 10%. According to the composition, the corrosion resistance of the wire is improved largely, and the disconnection of the wire can be prevented.
摘要翻译：目的：提高铝合金线材的耐腐蚀性，同时保持线材的低成本性，并防止使用由铝，硅和铜组成的线材导致的腐蚀断裂。构成：除了Al之外，电线6还含有1-10％的Si和1-10％的Cu。选择Si含量的范围是因为Si本身很硬，当含量超过10％时，导线的柔性降低，并且当Si混合时，不能充分显示出通过混合Si来提高导线的耐腐蚀性的效果小于1％。另一方面，Cu含量的范围是有限的，因为当含量小于1％时，电线的耐腐蚀性没有得到充分改善，并且电线的伸长率降低，耐腐蚀性和耐应力性能变差超过10％。根据构成，电线的耐腐蚀性大大提高，能够防止电线断线。

108. 发明专利

JPS57192037A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57192037A
公开(公告)日：1982-11-26
申请号：JP7652881
申请日：1981-05-22
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , SUZUKI HIROMICHI
IPC分类号： H01L21/52 , H01L23/495 , H01L21/58
摘要： PURPOSE:To obtain the performance of adhesion of a pellet having high reliability at low cost by coating the pellet attaching section of a substrate with a foundation plating layer and successively forming a lead plated layer and a tin plated layer onto the foundation plating layer. CONSTITUTION:A lead frame 1 forming the substrate has a tub 2 for bonding the semiconductor pellet 5 in Si, inner leads 3 for bonding one ends of wires 6 and outer leads 4. A nickel plated layer 7 preventing the diffusion of a lead frame material is shaped onto the tub 2 as the foundation plating layer. The lead plated layer 8 is formed onto the layer 7, and the tin plated layer 9 is shaped successively as another layer. Accordingly, cost can largely be reduced because expensive gold and silver are not used for pellet attaching treatment. The oxidation of the lead plated layer 8 is prevented and reliability is improved because the tin plated layer 9 is formed onto the lead plated layer 8.

109. 发明专利

JPS57109344A MANUFACTURE AND ITS APPARATUS FOR SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS57109344A
公开(公告)日：1982-07-07
申请号：JP18389680
申请日：1980-12-26
申请人： HITACHI LTD
发明人： OKIKAWA SUSUMU , MIKINO HIROSHI , SUZUKI HIROMICHI
IPC分类号： H01L21/52 , H01L21/58
摘要： PURPOSE:To prevent adherence of impurity onto the surface of a pellet by a method wherein when fixation of the pellet is performed by heated paste, gas is jetted onto the surface of the pellet. CONSTITUTION:A lead frame 2 is placed on a lead frame supporting table 7. Paste 10 is piled up on a tab 3, and on it a pellet is placed. In addition to lighting of a heating lamp 12, gas is jetted from a gas nozzle 1, and is injected against the pellet 1 etc. By this method the pellet is fixed to the tab 3 through heating and melting of paste. Impurities taken out during melting of paste is expelled together with gas jetted from the nozzle 1 through a suction hole 8a by suction.

110. 发明专利

JPS5793553A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS5793553A
公开(公告)日：1982-06-10
申请号：JP16955980
申请日：1980-12-03
申请人： HITACHI LTD
发明人： SUZUKI HIROMICHI , OKIKAWA SUSUMU
IPC分类号： H01L23/29 , H01L23/31 , H01L23/30
摘要： PURPOSE:To improve the moisture resistance of a semiconductor device by sealing a semiconductor pellet, the connecting part of an externally led lead and an aluminum wire with asphalt or the like and then sealing the outer periphery with resin having mechanical strength resistance. CONSTITUTION:A semiconductor pellet 8 is placed on a tab 7, the pellet is connected to an externally led lead 12 via an aluminum bonding wire 11, the connecting part of the pellet 8, aluminum wre 11 and the lead 12 is sealed with the first sealing layer 13 formed of high sealing and waterproof material such as asphalt or the like, and the outer periphery is sealed with the second sealing layer 14 formed of resin having strength resistance. Thus, a semiconductor device having good moisture resistance and sufficient mechanical strength can be obtained.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式