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91. 发明专利

JPH09329888A PHASE SHIFT MASK PATTERN 失效
公开(公告)号：JPH09329888A
公开(公告)日：1997-12-22
申请号：JP15108296
申请日：1996-06-12
申请人： OKI ELECTRIC IND CO LTD
发明人： KUWABARA KAZUYUKI , ONODERA TOSHIO , OTSUKA HIROSHI
IPC分类号： G03F1/26 , G03F1/30 , G03F1/34 , G03F1/68 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a phase shift mask pattern which is suitable for confirmation and adjustment of the focusing position. SOLUTION: This mask pattern 100 is composed of a rectangular light- shielding pattern 11 and a first phase shifter pattern 13a and a second phase shifter pattern 13b on both sides of the light-shielding pattern 11 and adjacent to the longer sides of the pattern 11, and as a whole, the mask pattern 100 is formed rectangular, the first and second phase shifter patterns 13a, 13b are arranged symmetric around the axis S which passes through the center of the light-shielding pattern 1 and is parallel to the long sides.

92. 发明专利

JPH09325467A LIGHT INTENSITY SIMULATION DEVICE 失效
公开(公告)号：JPH09325467A
公开(公告)日：1997-12-16
申请号：JP14331296
申请日：1996-06-05
申请人： TOPPAN PRINTING CO LTD
发明人： FUKUSHIMA YUICHI
IPC分类号： G03F1/26 , G03F1/36 , G03F1/68 , H01L21/00 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide a light intensity simulation device which performs simulation for optimizing a mask pattern efficiently and can change mask pattern data partially and easily. SOLUTION: A pattern preparation part 11 prepares pattern data based on various data input through an input part 1 and stores it in a storage part 12. Moreover, a light intensity calculation part 21 performs simulation calculation based on the pattern data selected from within the storage part 12 by a pattern selection part 13 and an optical condition selected by an optical condition selection part 14 and outputs the result to an output part 2. Moreover, when simulation calculation is done repeatedly, an instruction for changing data is given from an analysis processing part 22, and a retrieval part 15 retrieves pattern data from the storage part 12 or a data base part 3 properly based on the instruction and outputs it to the pattern selection part 13 to change the pattern data.

93. 发明专利

JP2677217B2 失效
公开(公告)号：JP2677217B2
公开(公告)日：1997-11-17
申请号：JP31401094
申请日：1994-11-24
IPC分类号： G01N21/88 , G01N21/41 , G01N21/956 , G03F1/26 , G03F1/32 , G03F1/68 , G03F1/84 , H01L21/027 , G03F1/08

94. 发明专利

JPH09251204A PHASE SIFTER ARRANGING METHOD FOR PHOTOMASK AND STORAGE MEDIUM 失效
公开(公告)号：JPH09251204A
公开(公告)日：1997-09-22
申请号：JP30845996
申请日：1996-11-19
申请人： FUJITSU LTD
发明人： HARUKI TAMAE
IPC分类号： G03F1/26 , G03F1/68 , G03F1/70 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To automatically obtain a preferable arrangement by using a computer by selectively arranging a phase shifter for each independent close net. SOLUTION: First, for a photomask pattern, an opening pattern is used as a node and an opening pattern interval as the interval between adjacent opening patterns having a set value or below is used as a branch, to extract the connections of the nodes with the branches as nets 40 and 50. Then, the nets 40 and 50 are divided into an opening net 42 not having a loop and close nets 41 and 43 except the opening net 42. After that, for each of the independent close nets 41 and 43, the phase shifter is selectively arranged. At this time, the nodes 10 and 18 of the close nets 41 and 43 connected to the opening net 42 have arbitrariness for arranging the phase shifter or not, so that in the open net 42 and the close nets 41 and 43, the way of arranging the phase shifter can be considered independently.

95. 发明专利

JPH09113368A AMOUNT OF PHASE-SHIFT DETECTION APPARATUS 失效
公开(公告)号：JPH09113368A
公开(公告)日：1997-05-02
申请号：JP29200795
申请日：1995-10-13
申请人： HOYA CORP
发明人： HIRANO MASAO
IPC分类号： G01B11/06 , G01J9/02 , G03F1/26 , G03F1/68
摘要： PROBLEM TO BE SOLVED: To obtain a detection apparatus by which a difference in the optical film thickness of an optically semitranslucent film or the like on a phase-shift mask blank is measured directly by detecting a phase on a low-frequency beat signal whose electric signal processing operation is easy. SOLUTION: A first coherent optical beam is made incident on a first optically translucent substance part in a sample, a second coherent optical beam is made incident on a second optically translucent substance part, the first and second optical beams which transmit the respective optically translucent substance parts are optically heterodyne-detected by coherent reference light whose optical frequency is slightly different from that of the first and second optical beams, and two beat signals are obtained. Than, the phase difference between the two beat signals is detected, and a phase-shift amount between two optical beams which transmit the two optically translucent substance parts is detected on the basis of the phase difference.

96. 发明专利

JPH0950117A PHOTOMASK AND EXPOSING METHOD USING THE SAME 失效
公开(公告)号：JPH0950117A
公开(公告)日：1997-02-18
申请号：JP20110495
申请日：1995-08-07
申请人： SONY CORP
发明人： FUKUMOTO ATSUSHI , SUGANUMA HIROSHI
IPC分类号： G03F1/26 , G03F1/50 , G03F7/20 , H01L21/027 , G03F1/14
摘要： PROBLEM TO BE SOLVED: To attain a photolithography having an illumination efficiency which is superior to that in a conventional oblique illumination method and capable of easily manufacturing a mask as compared with a phase shifting method. SOLUTION: The photomask R1 with a light shielding film pattern 3 formed on one main surface of a glass substrate 2 and with a diffraction grating 5 formed on the other main surface is set on a normal stepper, and the photomask R1 is illuminated from the diffraction grating side. The illuminating light is diffracted by the diffraction grating 5, for example, negative zero-order diffracted light is obliquely made incident on the light shielding film pattern 3 after being transmitted through the glass substrate 1. Then, the same illumination as that in the oblique illumination method is obtained. The straight advancing component (zero-order light) outgoing from an aperture part 4 is inclined with respect to the optical axis of the stepper, then, only the zero-order light and positive 1st-order light are taken in a projecting lens 7, so that the depth of focus DOF can be enlarged while improving the resolution. By optimizing the pattern of the diffracted grating 5, the pattern dependency of the resolution is eliminated. A complicated pupil operation is entirely unnecessitated.

97. 发明专利

JPH08227140A PHASE-SHIFT LITHOGRAPHIC MASK AND ITS MANUFACTURE 失效
公开(公告)号：JPH08227140A
公开(公告)日：1996-09-03
申请号：JP28355395
申请日：1995-10-31
申请人： IBM
发明人： BAAN JIENGU RIN
IPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F7/20 , H01L21/027 , G03F1/08
摘要： PROBLEM TO BE SOLVED: To provide the structure of an alternate element phase shift mask and its fabrication. SOLUTION: All mask pattern elements extended in the X-direction are formed on a first mask board, and all mask pattern elements extended in the Y-direction are formed on a second mask board. Two mask boards are combined into a single mask for the single exposing process on a wafer, or individual masks are separately exposed, and they are overlapped on a single mask wafer.

98. 发明专利

JPH0862827A PHASE SHIFT MASK AND ITS CORRECTING METHOD 失效
公开(公告)号：JPH0862827A
公开(公告)日：1996-03-08
申请号：JP19577094
申请日：1994-08-19
申请人： FUJITSU LTD
发明人： ITO SUSUMU
IPC分类号： B23K26/00 , G03F1/26 , G03F1/29 , G03F1/68 , G03F1/72 , H01L21/027 , G03F1/08
摘要： PURPOSE: To correct residual defects so as not to generate defects by correcting operations without changing the conventional stages or adding thereto concerning a method for correcting te residual defects within the shifter holes of a phase shift mask. CONSTITUTION: The residual defects 3 existing within the shifter holes 2 of a glass substrate 1 for the phase shift mask are etched away by using a laser beam 4 converged by a condenser lens 5. An excimer laser is used for this laser beam 4. Etching of the glass substrate 1 by the laser beam 4 is executed in an inert gaseous atmosphere or assist gaseous atmosphere.

99. 发明专利

JPH07101302B2 失效
公开(公告)号：JPH07101302B2
公开(公告)日：1995-11-01
申请号：JP21571886
申请日：1986-09-16
IPC分类号： G02B5/18 , G03F1/00 , G03F1/26 , G03F1/54 , G03F1/68 , H01L21/027 , H01L21/30 , G03F1/08

100. 发明专利

JPH07281413A ATTENUATION TYPE PHASE SHIFT MASK AND ITS PRODUCTION 失效
公开(公告)号：JPH07281413A
公开(公告)日：1995-10-27
申请号：JP6693494
申请日：1994-04-05
申请人： MITSUBISHI ELECTRIC CORP
发明人： MIYAZAKI JUNJI , NAKAE TERUHIRO , YOSHIOKA NOBUYUKI , OZAWA HIDEHIKO
IPC分类号： G03F1/68 , G03F1/00 , G03F1/26 , G03F1/29 , G03F1/32 , G03F1/36 , G03F1/80 , H01L21/027 , G03F1/08
摘要： PURPOSE:To provide an attenuation type phase shift mask having patterns to prevent generation of light intensity regions (side lobe images) generated around the light transmissive parts of the attenuation type phase shift mask. CONSTITUTION:The prescribed regions of phase shifter parts 10 near the circumferences of the light transmissive parts 20 are provided with auxiliary patterns 30 for adjusting the exposure of exposing light to a material to be exposed corresponding to these regions. Negation of the light intensity of the side lobe images is made possible by these auxiliary patterns 30.

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