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91. 发明专利

JPS61170061A TANTALUM-CAPACITOR 失效
公开(公告)号：JPS61170061A
公开(公告)日：1986-07-31
申请号：JP1024985
申请日：1985-01-23
申请人： SEIKO EPSON CORP
发明人： IWAMATSU SEIICHI
IPC分类号： H01L27/10 , H01G4/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
摘要： PURPOSE:To prevent the leakage of currents peculiar to Ta2O5 completely by holding the upper and lower sections of a Ta2O5 film by SiO2 films. CONSTITUTION:A Ta2O5 film 21 is held by SiO2 films 22 and 23, and a dielectric consisting of three layer structure of SiO2-Ta2O5-SiO2 is held by electrodes 24 and 25. The leakage of currents among the electrodes is eliminated and the time of holding charges is lengthened in a tantalum-capacitor using the dielectric composed of three layer structure of SiO2-Ta2O5-SiO2, and a memory holding time can be prolonged when the capacitor is applied to a memory capacitance section for a MOS type dynamic RAM.

92. 发明专利

JPS6118282B2 JPS6118282B2 - 失效
公开(公告)号：JPS6118282B2
公开(公告)日：1986-05-12
申请号：JP7265778
申请日：1978-06-14
申请人： Noboru Tsuya
发明人： TSUYA NOBORU , ARAI KENICHI , TAMURA HIROSHI
IPC分类号： C03C10/02 , C03C14/00 , H01B3/00 , H01B3/08 , H01B3/10 , H01G4/06 , H01G4/10 , H01L41/39

93. 发明专利

JPS6184808A Manufacture of printed capacitor 失效
标题翻译：印刷电容器的制造
公开(公告)号：JPS6184808A
公开(公告)日：1986-04-30
申请号：JP20664884
申请日：1984-10-02
申请人： Matsushita Electric Ind Co Ltd
发明人： OKU MITSUMASA
IPC分类号： H01G4/33 , H01G4/06 , H01G4/10

94. 发明专利

JPS6136963A Manufacture of semiconductor device 失效
标题翻译：半导体器件的制造
公开(公告)号：JPS6136963A
公开(公告)日：1986-02-21
申请号：JP15748984
申请日：1984-07-30
申请人： Hitachi Ltd
发明人： JINRIKI HIROSHI , NISHIOKA TAIJO , MUKAI KIICHIRO
IPC分类号： H01L27/10 , H01G4/10 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L27/04
摘要： PURPOSE:To obtain a capacitor having large capacitance and a small area by heating a tantalum oxide formed through a chemical vapor phase growth method in a dried oxidizing atmosphere. CONSTITUTION:An element isolation region 2 is formed onto an Si substrate 1, and a tantalum oxide 3 is applied through a chemical vapor phase growth method. The whole is heated for 120min in a dried O2 atmosphere at 800 deg.C. A tungsten electrode 4 is shaped onto the tantalum oxide 3. Accordingly, when using the dried O2 atmosphere, SiO2 is difficult to be shaped on the interface between the tantalum oxide and Si, thus forming a capacitor having high permittivity. Leakage currents are reduced, and withstanding voltage is also increased.
摘要翻译：目的：通过在干燥的氧化气氛中加热通过化学气相生长法形成的氧化钽来获得具有大电容和小面积的电容器。构成：在Si衬底1上形成元件隔离区2，通过化学气相生长法施加氧化钽3。将整体在800℃的干燥的O 2气氛中加热120分钟。钨电极4成形在氧化钽3上。因此，当使用干燥的O 2气氛时，难以在氧化钽和Si之间的界面上形成SiO 2，从而形成具有高介电常数的电容器。泄漏电流降低，耐压也增加。

95. 发明专利

JPS6055975B2 失效
公开(公告)号：JPS6055975B2
公开(公告)日：1985-12-07
申请号：JP5498580
申请日：1980-04-25
申请人： FUJITSU LTD
发明人： KOYAMA MASATAKA , SATO KYOSHI , TERAJIMA MINORU
IPC分类号： H01G4/10 , H01G13/00

96. 发明专利

JPS6046534B2 失效
公开(公告)号：JPS6046534B2
公开(公告)日：1985-10-16
申请号：JP3957478
申请日：1978-04-03
申请人： NIPPON ELECTRIC CO
发明人： SASAMOTO TOSHIRO
IPC分类号： H01G9/04 , H01G4/10

97. 发明专利

JPS60152049A CAPACITOR 失效
公开(公告)号：JPS60152049A
公开(公告)日：1985-08-10
申请号：JP711084
申请日：1984-01-20
申请人： HITACHI LTD
发明人： SAKUMA NORIYUKI , NISHIOKA TAIJIYOU , MUKAI KIICHIROU
IPC分类号： H01G4/10 , H01L21/822 , H01L27/04
摘要： PURPOSE:To form a large capacity for a capacitor in a smaller area by a methed a high-melting point metal film is formed on the surface of the Si substrate of the contact hole part; insulating films having a large specific inductive capacity, a second electrode, etc., are laminated thereon; the patterns are formed at one time; and a thermal treatment is performed in an oxygen atmosphere. CONSTITUTION:Interelement isolation insulating films 2, a W electrode 3 of a film thickness of about 1,000Angstrom , a Ta2O3 film 4 of a film thickness of about 300Angstrom , a W electrode 5 of a film thickness of 1,000Angstrom , an Al electrode 6 and tungsten oxide films 7 are formed on an Si substrate 1. In the manufacturing process of this capacitor, after the W film 3, the Ta2O3 film 4, the W film 5 and the Al film 6 were laminated, each film of Al/W/Ta2O3/W is performed a working for being formed into an electrode by performing a dry etching using the same photo mask. After that, a thermal treatment is performed in an oxygen atmosphere of 450 deg.C.

98. 发明专利

JPS60113918A CAPACITIVE DEVICE AND ITS PACKAGING METHOD 失效
公开(公告)号：JPS60113918A
公开(公告)日：1985-06-20
申请号：JP23047484
申请日：1984-11-02
申请人： ILLINOIS TOOL WORKS
发明人： CHIYAARUSU SHII REIBAN
IPC分类号： H01G4/224 , B23K11/20 , B65D65/00 , H01G20060101 , H01G2/10 , H01G4/10 , H01G4/228 , H01G4/232 , H01G4/30 , H01G13/00

99. 发明专利

JPS6012771B2 失效
公开(公告)号：JPS6012771B2
公开(公告)日：1985-04-03
申请号：JP10719975
申请日：1975-09-03
申请人： MATSUSHITA ELECTRIC IND CO LTD
发明人： SHINOHARA KOICHI , SHIMIZU YASUHIRO
IPC分类号： H01G9/04 , H01G4/10

100. 发明专利

JPS605015A AMORPHOUS COMPOUND MATERIAL OF TELLURIUM-SILICON TYPE AND ITS PREPARATION 失效
公开(公告)号：JPS605015A
公开(公告)日：1985-01-11
申请号：JP7973783
申请日：1983-05-06
申请人： SHINGIJUTSU KAIHATSU JIGYODAN , MASUMOTO TAKESHI , SUZUKI KENJI , MASUDA SHUJI , OTA YUKIHIRO
发明人： MASUMOTO TAKESHI , SUZUKI KENJI , MASUDA SHIYUUJI , OOTA YUKIHIRO , OOKUBO YOSHITAKA
IPC分类号： C01B33/12 , G02B6/12 , G02F1/03 , G02F1/05 , H01B3/08 , H01B3/10 , H01B3/12 , H01G4/10 , H01G7/00
摘要： PURPOSE:The titled material useful as a magnetic material, magnetic element of light response, heat-electricity switching element, etc., consisting of a specific composition. CONSTITUTION:An amorphous compound material of tellurium-silicon type consisting of a composition shown by the formula (x is 1-0). The material is prepared by introducing a mixture of TeO2 and SiO2 in a given ratio to the tube 7, heating the mixture to a temperature about 50-200 deg.C higher than the melting point of the mixture by the coil 5 to melt it, spraying it from the nozzle 11 upon the surface of the roll 13 rotating at about 5-35m/sec. peripheral speed, followed by quenching it extremely at about 10 -10 deg.C/sec cooling rate.

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