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91. 发明专利

JPH05238878A 失效
公开(公告)号：JPH05238878A
公开(公告)日：1993-09-17
申请号：JP4171092
申请日：1992-02-27
申请人： SONY CORP
发明人： HANIYU KAZUTAKA , WATABE KOJI , OKAMOTO TSUTOMU , ASO KOICHI
IPC分类号： C30B17/00 , C30B29/22 , G02F1/35 , G02F1/355 , H01S3/109
摘要： PURPOSE:To obtain MTiOXO4 (M=K, Rb or Cs=X=P or As) single crystal with reduced defects leading to high-quality nonlinear optical materials by suppressing flux inclusion liable to be developed during such single crystal growth. CONSTITUTION:A seed crystal is brought into contact with a flux-contg. melt followed by annealing under rotating the seed crystal to grow a single crystal of a multiple oxide of formula MTiOXO4) (M=K, Rb or Cs=X=P or As) from the tip of the seed crystal. In this process, the front plane of the seed crystal 3 being in contact with the melt consists of planes selected from {1, 0, 0} plane, {2, 0, 1} plane, {1, 1, 0} plane, and {0.1, 1} plane. And, the tip of the c-axis direction for the seed crystal 3 is in contact with the melt and the front plane consists of planes selected from {2, 0, 1} plane and {0,1,1} plane.

92. 发明专利

JPH05148082A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH05148082A
公开(公告)日：1993-06-15
申请号：JP33553491
申请日：1991-11-26
申请人： NIPPON MINING CO
发明人： KOHIRO KENJI
IPC分类号： C30B11/00 , C30B17/00 , C30B27/00 , C30B29/40
摘要： PURPOSE:To prevent cracks from occurring in single crystal in cooling by installing a partition plate made of pyrolytic boron nitride between a raw material melt and a liquid encapsulating agent. CONSTITUTION:A raw material for a compound semiconductor is placed in a crucible 3 arranged in a high-pressure vessel 1 and a partition plate 11, made of pyrolytic boron nitride and having 0.05-0.5mum thickness and an encapsulating agent 6 are then placed thereon. An inert gas is subsequently introduced from a gas introduction pipe 8, and the encapsulating agent 6 and the raw material are simultaneously melted with a heater 2 to form a raw material melt 5 and the liquid encapsulating agent 6. A seed crystal is then brought into contact with the raw material melt 5 with a single crystal pulling up shaft 7 and sufficiently made intimate therewith. Thereby, the objective single crystal 9 is then grown while cooling the crucible 3.

93. 发明专利

JPH04124089A PRODUCTION OF COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPH04124089A
公开(公告)日：1992-04-24
申请号：JP24190490
申请日：1990-09-12
申请人： NIPPON MINING CO
发明人： KOHIRO KENJI
IPC分类号： C30B17/00 , C30B15/00 , C30B27/00 , C30B27/02 , C30B29/40
摘要： PURPOSE:To prevent the generation of crack and dislocation in a single crystal in the production of a compound semiconductor single crystal by a liquid-encapsulating Kyropoulos process, etc., by cooling the crystal under the encapsulant using a specific method without pulling up the crystal after the growth of the single crystal. CONSTITUTION:A molten raw material 5 in a crucible 3 placed in a pressure vessel 1 is covered with a liquid encapsulant layer 6, the pressure vessel 1 is filled with high-pressure inert gas atmosphere and the molten raw material 5 is slowly cooled to effect the growth of a compound semiconductor single crystal 9. The grown single crystal 9 is cooled under the encapsulant layer 6 without being pulled out of the crucible and, when the temperature of the encapsulant layer 6 reaches 500-650 deg.C in the cooling process, the inert gas pressure in the pressure vessel 1 is decreased to expand the inert gas, gas of group V element, group VI element, etc., dissolved in the liquid encapsulant layer 6 to foam the encapsulant layer. The contacting area between the encapsulant 6 and the grown crystal 9 is decreased by this process and the crack caused by the difference of thermal expansion coefficients is generated mainly in the encapsulant layer to prevent the generation of cracks in the grown crystal 9.

94. 发明专利

JPH01148796A PRODUCTION OF OXIDE SUPERCONDUCTOR CRYSTAL 失效
公开(公告)号：JPH01148796A
公开(公告)日：1989-06-12
申请号：JP30463387
申请日：1987-12-03
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B17/00 , C30B15/00 , C30B29/22 , H01B13/00 , H01L39/24
摘要： PURPOSE:To grow a multicomponent oxide superconductor crystal of high quality at a low temp. by adopting a liq. phase growth method using two kinds of fluorides including an alkali metal fluorides as a flux. CONSTITUTION:A multicomponent oxide superconductor crystal is grown by a liq. phase growth method using two kinds of fluorides including an alkali metal fluoride as a flux. The multicomponent oxide superconductor may be represented by a general formula ABa2Cu3O7-delta (where A is Y, Yb, Ho, Dy, Eu, Er, Tm or Lu). The flux may be a liq. mixture of KF-BaF2, NaF-CaF2, KF-NaF or LiF-KF.

95. 发明专利

JPH01131098A PRODUCTION OF OXIDE SUPERCONDUCTOR CRYSTAL 失效
公开(公告)号：JPH01131098A
公开(公告)日：1989-05-23
申请号：JP28811787
申请日：1987-11-13
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NISHIO JOSHI , KATSUMATA TORU
IPC分类号： C30B17/00 , C30B29/22 , H01B12/00 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To facilitate the production of plural oxide superconductor of good quality by using flux containing vanadium oxide, when the crystal of plural oxide superconductor is allowed to grow by the liquid-phase growth method. CONSTITUTION:A solution 7 of flux containing vanadium oxide such as V2O5, and raw materials of plural oxide superconductor such as a mixture of Y2O3, 2BaO, and 3CuO, is charged in the crucible 3 in the single crystal-pulling up unit. Then, the solution 7 is heated with heater 2 at about 1,200-1,300 deg.C and cooled down to about 700 deg.C. Then, the seed crystal such as of Y-Ba-Cu-O single crystal on the top of the pulling-up shaft 8 is allowed to contact with the solution 7 and the oxide superconductor is pulled up, as an oxygen gas is fed from pipe 12. Thus, crystals of oxide supercouductor with high homogeneity of superconductive transition point and large critical current can be produced with high reproducibility.

96. 发明专利

JPS63310798A PRODUCTION OF OXIDE SUPERCONDUCTING ELEMENT WAFER 失效
公开(公告)号：JPS63310798A
公开(公告)日：1988-12-19
申请号：JP14572187
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI
IPC分类号： C30B17/00 , C30B19/02 , C30B29/22 , H01B12/06 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To obtain an element wafer having a crystal layer of a multicomponent oxide superconductor by forming a multicomponent oxide superconducting crystal layer on a specified crystal substrate by a liquid phase growth method. CONSTITUTION:For example, a soln. 22 contg. YCuO powder dissolved in a flux comprising a liquid mixture of BaCO3 and B2O3 is prepd. in a Pt crucible 21 of a liquid phase growth device. A specified crystal substrate, i.e. YCuO crystal substrate 23 is held by a holder 25 provided to a tip end of a supporting rod 24 and allowed to contact with the soln. 22. Thus, liquid epitaxial growth is proceeded at a specified cooling rate while revolving the crystal substrate at high speed. By this method, an epitaxial wafer having a uniform Ba2Cu3O7-delta single crystal layer 27 formed on a YCuO crystal substrate 23 with a specified thickness is obtd.

97. 发明专利

JPS6090897A METHOD AND APPARATUS FOR MANUFACTURING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS6090897A
公开(公告)日：1985-05-22
申请号：JP19828783
申请日：1983-10-25
申请人： NIPPON TELEGRAPH & TELEPHONE , SUMITOMO ELECTRIC INDUSTRIES
发明人： MIYAZAWA SHINTAROU , TADA KOUJI
IPC分类号： C30B27/02 , C30B15/14 , C30B17/00 , H01L21/02 , H01L21/208
摘要： PURPOSE:To manufacture a long-sized compound semiconductor single crystal without dislocation by forming a single crystal in the shape of an umbrella extending to the inner diameter of a crucible with a seed crystal in the long-sized crucible, and growing the crystal while specifying the product of a temp. gradient and a growing speed. CONSTITUTION:A specified amt. of the mother materials Ga and As is charged into a crucible 1, and a liquid sealing material B2O3 3 is added thereon. The crucible is heated by an upper heater 6a and a lower heater 6b, and the GaAs melt 2 is covered with the sealing material 3. Then a seed crystal 4 is brought into contact with the melt 2, and the vertical temp. gradient in the vicinity of the interface between the seed crystal 4 and the melt 2 is regulated by the upper heater 6a and a temp. gradient controlling heater 8. An umbrella-shaped thin plate single crystal is grown by controlling the output of the lower heater 6b. Then the umbrella-shaped single crystal is further grown while regulating the product of the temp. gradient and the growing temp. to

98. 发明专利

JPS55358B1 失效
公开(公告)号：JPS55358B1
公开(公告)日：1980-01-07
申请号：JP4885169
申请日：1969-06-21
IPC分类号： C30B11/00 , C30B9/00 , C30B29/28 , C30B17/00

99. 发明专利

JPS5320474B2 失效
公开(公告)号：JPS5320474B2
公开(公告)日：1978-06-27
申请号：JP6812372
申请日：1972-07-07
IPC分类号： C01B33/26 , B01D20060101 , C01D3/12 , C30B7/00 , C30B7/08 , C30B7/10 , C30B17/00 , C30B19/00 , C30B19/12 , C30B23/00 , C30B25/06 , C30B29/10 , C30B29/54 , C30B33/00 , H01L21/208

100. 发明专利

JPS4946578A 失效
公开(公告)号：JPS4946578A
公开(公告)日：1974-05-04
申请号：JP8592072
申请日：1972-08-29
IPC分类号： C30B11/00 , C30B17/00 , H01L21/208

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