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91. 发明专利

JP5328926B2 Apparatus and method for reversing the substrate wafer supply to sputter coating system in the clean room 有权
公开(公告)号：JP5328926B2
公开(公告)日：2013-10-30
申请号：JP2011537844
申请日：2009-11-26
申请人：グレンツェバッハ・マシーネンバウ・ゲーエムベーハーGrenzebach Maschinenbau GmbH
发明人：フランツ，ローラント
IPC分类号： H01L21/677 , B65G49/06 , C23C14/50 , C23C14/54
CPC分类号： B65G49/061 , B65G2249/02 , C03B35/205 , C23C14/34 , C23C14/505 , C23C14/542 , C23C14/547 , C23C14/568
摘要： The invention relates to a method and to a device for reversing the feeding of a sputter coating system, particularly when coating a photovoltaic module, in clean rooms, having the following characteristics: a) a transport frame (11) for receiving a substrate wafer (19) of a photovoltaic module, b) a rotary device having means for mounting the transport frame (11), having means for rotating the transport frame (11), and having means for transporting the transport frame (11), c) means for precisely aligning the rotary device relative to the sputter coating system, d) a detection device (18) for checking a sputter process, and computer program having a program code for performing the process steps.

92. 发明专利

JP5296676B2 Plasma processing system using the detection method and the method of plasma unconstrained 有权
公开(公告)号：JP5296676B2
公开(公告)日：2013-09-25
申请号：JP2009518520
申请日：2007-06-26
申请人：ラムリサーチコーポレーション
发明人：フィッシャー，アンドレアス , パークル，デイビッド
IPC分类号： H05H1/00 , C23C14/54 , C23C16/52 , H01L21/205 , H01L21/3065 , H05H1/46
CPC分类号： H01L21/67069 , H01J37/304 , H01J37/32935 , H01L21/67253
摘要： Universal plasma unconfinement detection systems configured to detect the plasma unconfinement condition in the plasma processing chamber and methods therefor. The detection systems and methods are designed to reliably and accurately detect the existence of the plasma unconfinement condition in a process-independent and recipe-independent manner.

93. 发明专利

JP2013173965A Vapor deposition apparatus 审中-公开
标题翻译：蒸气沉积装置
公开(公告)号：JP2013173965A
公开(公告)日：2013-09-05
申请号：JP2012037721
申请日：2012-02-23
申请人： Mitsubishi Heavy Ind Ltd , 三菱重工業株式会社
发明人： HIRANO TATSUYA , SHIGEOKA NOBUYUKI
IPC分类号： C23C14/24 , C23C14/54
摘要： PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus which can deposit a film at a stable film deposition rate without being affected by temperature changes.SOLUTION: A vapor deposition apparatus 10 includes: an evaporation source; a heating means 16; a film deposition rate detection means 14 for detecting a film deposition rate of a substrate; a position detection means 17 for detecting a position of the substrate; and a control means 11 for controlling the heating means 16 on the basis of the film deposition rate detected by the film deposition rate detection means 14. The control means 11 includes: a correction amount determining unit 18 for determining a correction amount on the basis of a relation between a preliminarily obtained position of the substrate and a correction amount according to a temperature change of an oscillator, and the position of the substrate detected by the position detection means 17; a corrected film deposition rate calculation unit 19 for obtaining a corrected film deposition rate by correcting the film deposition rate detected by the film deposition rate detection means 14 by the determined correction amount; and a heating means control unit 20 for controlling the heating means 16 on the basis of the corrected film deposition rate.
摘要翻译：要解决的问题：提供一种可以以不影响温度变化的方式以稳定的膜沉积速率沉积膜的气相沉积设备。解决方案：蒸镀装置10包括：蒸发源; 加热装置16; 用于检测基板的成膜速度的成膜速度检测装置14; 用于检测基板的位置的位置检测装置17; 以及控制装置11，用于根据由成膜速率检测装置14检测的成膜速度来控制加热装置16.控制装置11包括：校正量确定单元18，用于基于基板的预先获得的位置与振荡器的温度变化的校正量之间的关系以及由位置检测单元17检测出的基板的位置之间的关系; 校正膜沉积速率计算单元19，用于通过校正由膜沉积速率检测装置14检测的成膜速度所确定的校正量来获得校正的膜沉积速率; 以及加热装置控制单元20，用于基于校正的膜沉积速率来控制加热装置16。

94. 发明专利

JP5256475B2 Facing target sputtering apparatus and facing target sputtering method 有权
公开(公告)号：JP5256475B2
公开(公告)日：2013-08-07
申请号：JP2011027401
申请日：2011-02-10
申请人：株式会社ユーテック
发明人：啓安小島 , 光博鈴木
IPC分类号： C23C14/34 , C23C14/54

95. 发明专利

JP5198106B2 Film forming apparatus, and a film forming method 有权
公开(公告)号：JP5198106B2
公开(公告)日：2013-05-15
申请号：JP2008078814
申请日：2008-03-25
申请人：東京エレクトロン株式会社
发明人：中尾　　賢 , 宗生原田
IPC分类号： H01L21/31 , C23C14/12 , C23C14/54 , C23C16/30 , H01L21/312
CPC分类号： C23C14/12 , B05D1/60 , B05D3/0473 , B05D3/0493 , C23C14/243 , H01L21/02126 , H01L21/02312 , H01L21/312

96. 发明专利

JP5193487B2 Deposition apparatus and deposition method 有权
公开(公告)号：JP5193487B2
公开(公告)日：2013-05-08
申请号：JP2007093305
申请日：2007-03-30
申请人：富士フイルム株式会社
发明人：進相原 , 一也大森
IPC分类号： C23C14/24 , C23C14/54 , H01L21/285

97. 发明专利

JP5191656B2 Film deposition apparatus and a film forming method 有权
公开(公告)号：JP5191656B2
公开(公告)日：2013-05-08
申请号：JP2006511584
申请日：2005-03-29
申请人：忠弘大見 , 東京エレクトロン株式会社
发明人：忠弘大見 , 孝明松岡
IPC分类号： C23C14/24 , C23C14/12 , C23C14/54 , C23C14/56 , C23C16/448 , F28F13/08 , F28F27/02 , H01L51/50 , H05B33/10 , H05B33/28
CPC分类号： C23C14/541 , C23C14/12 , C23C14/228 , C23C14/243 , C23C14/564 , F28D2021/0077 , F28F9/026 , F28F13/08

98. 发明专利

JP2013060649A Ion plating apparatus and ion plating method 有权
标题翻译：离子镀设备和离子镀方法
公开(公告)号：JP2013060649A
公开(公告)日：2013-04-04
申请号：JP2011201513
申请日：2011-09-15
申请人： Shinko Seiki Co Ltd , 神港精機株式会社
发明人： TERAYAMA NOBUYUKI , KAJI MASANORI , YONA HIROAKI
IPC分类号： C23C14/32 , C23C14/54
摘要： PROBLEM TO BE SOLVED: To stabilize the incident amount of ions into a surface of a matter to be treated.SOLUTION: In an ion plating apparatus 10, thermal electrons emitted from a thermal electron emitting filament 36 are accelerated toward an ionizing electrode 38; then the thermal electrons inelastically collide with evaporated particles of a coating material 22, evaporated from an evaporation source 16, and the evaporated particles are thereby ionized; and further, the ionized evaporated particles are made incident on a surface of a substrate 26 as a matter to be treated, and thereby, a coating is formed on the surface of the substrate 26. The electric current Id flowing through the ionizing electrode 38 correlates with the generation amount of ions. The emission amount of the thermal electrons from the thermal electron emitting filament 36 is controlled so that the current Id flowing through the ionizing electrode 38 may become constant. In this manner, when the emission amount of the thermal electrons is controlled, the generation amount of ions is stabilized, and consequently, the incident amount of ions into the surface of the substrate 26 is stabilized.
摘要翻译：要解决的问题：将离子的入射量稳定在待处理物体的表面。解决方案：在离子镀装置10中，从热电子发射丝36发射的热电子朝向电离电极38加速; 那么热电子与蒸发源16蒸发的涂覆材料22的蒸发颗粒弹性碰撞，并且蒸发的颗粒被电离; 此外，离子化的蒸发颗粒作为待处理的物质入射到基板26的表面上，从而在基板26的表面上形成涂层。流过电离电极38的电流Id与与离子的产生量。控制来自热电子发射丝36的热电子的发射量，使得流过电离电极38的电流Id可能变得恒定。以这种方式，当控制热电子的发射量时，离子的产生量稳定，因此离子进入衬底26的表面的入射量稳定。版权所有（C）2013，JPO＆INPIT

99. 发明专利

JP5175229B2 Film forming apparatus and method of operation thereof 有权
公开(公告)号：JP5175229B2
公开(公告)日：2013-04-03
申请号：JP2008554954
申请日：2008-06-13
申请人：新明和工業株式会社
发明人：基岡田 , 健司山川 , 毅士古塚 , 善朗村上
IPC分类号： C23C14/32 , C23C14/54 , H05H1/48
CPC分类号： H05H1/48 , C23C14/54

100. 发明专利

JP5153410B2 Lens film forming method, manufacturing method of the deposition apparatus and the lens 有权
公开(公告)号：JP5153410B2
公开(公告)日：2013-02-27
申请号：JP2008092429
申请日：2008-03-31
申请人： Hoya株式会社
发明人：幸弘高橋
IPC分类号： C23C14/24 , C23C14/02 , C23C14/54 , G02B1/11 , G02B1/115

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