专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

91. 发明专利

JP2005220261A Boron-containing organosilazane polymer and method for producing the same and ceramic obtained therefrom 审中-公开
标题翻译：含硼有机硅聚合物及其生产方法及其获得的陶瓷
公开(公告)号：JP2005220261A
公开(公告)日：2005-08-18
申请号：JP2004030867
申请日：2004-02-06
申请人： Art Kagaku:Kk , 株式会社アート科学
发明人： HASEGAWA YOSHIO , KATO EIJI
IPC分类号： C04B35/58 , C04B35/571 , C04B35/589 , C08G77/62
摘要： PROBLEM TO BE SOLVED: To provide a boron-containing organosilazane polymer suitable as a precursor for obtaining a ceramic having an amorphous structure which is stable even at a high temperature of ≥1,800 °C, being oxidation-resistant at ≥1,700°C and having a low density and high radiation ratio in a high yield and to provide a method for producing the polymer. SOLUTION: The boron-containing organosilazane polymer is produced by passing through a first step for mixing an organohalosilane with boron trichloride in an organic solvent, a second step for obtaining an oligomer by carrying out coammonolysis of the mixture by using ammonia while stirring the mixture at ≤-55°C, a third step for carrying out deammonia condensation by heating the oligomer under stirring, a fourth step for filtering ammonium chloride produced as a by-product at a room temperature and a fifth step for polymerizing the oligomer by an alkali catalyst. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：为了提供适合作为前体的含硼有机硅氮烷聚合物，其获得具有无定形结构的陶瓷，甚至在≥1800℃的高温下也是稳定的，抗氧化性≥1,700° 并且以高产率具有低密度和高辐射比并提供聚合物的制备方法。解决方案：含硼有机硅氮烷聚合物是通过在有机溶剂中通过有机卤代硅烷与三氯化硼混合的第一步骤制备的，第二步是通过在搅拌下用氨进行混合物的混合溶液来获得低聚物该混合物在≤-55℃，第三步是在搅拌下加热低聚物进行脱氨缩合，第四步是过滤作为副产物在室温下生成的氯化铵，以及第五步骤，通过碱催化剂。版权所有（C）2005，JPO＆NCIPI

92. 发明专利

JP3606900B2 失效
公开(公告)号：JP3606900B2
公开(公告)日：2005-01-05
申请号：JP9293994
申请日：1994-04-06
IPC分类号： C04B35/571 , C04B35/589 , C08G77/48 , C08G77/62 , D01F9/10

93. 发明专利

JP2004536196A Epoxy resin for the polysilazane-modified polyamine curing agent 有权
公开(公告)号：JP2004536196A
公开(公告)日：2004-12-02
申请号：JP2003514064
申请日：2002-07-16
申请人：キーオン・コーポレーション
发明人：ルカックス，アレキサンダー，ザ・サード
IPC分类号： C08G59/50 , C08G77/62 , C08L63/00 , C09D163/00 , C09D183/16 , C09J163/00 , C09J183/16 , H05K1/03
CPC分类号： C08G77/452 , C08G77/54 , C08G77/62 , C08L63/00 , C08L83/16 , H05K1/0326 , C08L83/00 , C08L2666/14
摘要：ジグリシジルエーテルエポキシ樹脂およびノボラックエポキシ樹脂などのクラスのエポキシ樹脂用の新規ポリシラザン修飾ポリアミン硬化剤（このような硬化剤を含んでいる反応混合物、組成物及び反応生成物を含む）は、未修飾のポリアミン硬化剤を用いて硬化した同じエポキシ樹脂に比べて、向上した高温物性、より高いチャー収率、より良好な接着性を硬化したエポキシ樹脂に付与する。

94. 发明专利

JP2004532318A Thermally stable, moisture curable polysilazanes and polysiloxazane class 有权
公开(公告)号：JP2004532318A
公开(公告)日：2004-10-21
申请号：JP2002587215
申请日：2002-04-25
申请人：キーオン・コーポレーション
发明人：ナシアク，ゲーリー・ジェイ , ルカックス，アレキサンダー
IPC分类号： B05D7/24 , B32B27/00 , C08G77/54 , C08G77/62 , C09D183/04 , C09D183/05 , C09D183/08 , C09D183/14 , C09D183/16
CPC分类号： C08G77/50 , C08G77/54 , C08G77/62 , C09D183/14 , C09D183/16 , Y10S528/901 , Y10T428/31663
摘要：アルコキシシリル置換ポリシラザン又はアルコキシシリル置換ポリシロキサザンでもよいケイ素含有重合体で処理することにより、ガラス、セラミックスおよび金属を含む様々なタイプの表面を、熱および腐食に対して安定化させる。組成物の重合体コーティングは、室温〜約５０℃で、触媒的硬化剤の導入の必要なしに湿気を含む雰囲気において硬化されてもよい。

95. 发明专利

JP3448611B2 失效
公开(公告)号：JP3448611B2
公开(公告)日：2003-09-22
申请号：JP10619493
申请日：1993-04-08
IPC分类号： C04B35/589 , C08G77/48 , C08G77/62 , C08G79/00 , D01F9/10

96. 发明专利

JP2002293941A SILICON-CONTAINING COPOLYMER AND METHOD FOR PRODUCING THE SAME 失效
公开(公告)号：JP2002293941A
公开(公告)日：2002-10-09
申请号：JP2001099092
申请日：2001-03-30
申请人： CLARIANT JAPAN KK
发明人： TASHIRO YUJI
IPC分类号： C08J5/18 , C08G77/00 , C08G77/54 , C08G77/60 , C08G77/62 , C08L20060101 , C08L83/14
摘要： PROBLEM TO BE SOLVED: To obtain a polymer having high resistance, high light transmittance, a low dielectric constant, high mechanical strength and flexibility even by curing in air. SOLUTION: This silicon-containing has 500-1,000,000 number-average molecular weight, contains an Si-O bond and comprises at least structural units represented by general formula (I) and general formula (II) and, if necessary, general formula (III)-(VII) (R to R and R and R are each independently an alkyl group, an alkenyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkylamino group, an alkylsilyl group or an alkoxy group; R is a bifunctional group; R is a bifunctional aromatic group; A is NH or O).

97. 发明专利

JP2002107937A PHOTOSENSITIVE COMPOSITION FOR INTERLAYER ISOLATION FILM AND METHOD FOR FORMING PATTERNED INTERLAYER ISOLATION FILM 失效
公开(公告)号：JP2002107937A
公开(公告)日：2002-04-10
申请号：JP2000297107
申请日：2000-09-28
申请人： CLARIANT JAPAN KK
发明人： NAGAHARA TATSURO , MATSUO HIDEKI
IPC分类号： G03F7/039 , C08G77/62 , C08K5/00 , C08L83/16 , G03F7/004 , G03F7/075 , G03F7/30 , G03F7/40 , H01L21/027 , H01L21/312 , H01L21/768
摘要： PROBLEM TO BE SOLVED: To enhance the resolution of the exposure pattern of a photosensitive composition for an interlayer isolation film. SOLUTION: The photosensitive composition contains a modified polysilsesquiazane containing a basic constitutional unit of the formula -[SiR1(NR2)1.5]- and 0.1-100 mol% other constitutional units of the formula -[SiR12NR2]-and/or the formula -[SiR13(NR2)0.5]based on the basic constitutional unit and having a number average molecular weight of 100-100,000 (in the formulae, the definitions of R1 and R2 are described in this specification), a photo-acid generating agent and a water-soluble compound as a shape stabilizer. A compound selected from among 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2-nitro-4- aminotoluene, propylene carbonate, ethylene carbonate and water-soluble acrylic polymers is particularly suitable for use as the water-soluble compound.

98. 发明专利

JP2001319927A SPIN ON GLASS COMPOSITION AND METHOD FOR FORMING SILICON OXIDE FILM USING THE SAME 失效
公开(公告)号：JP2001319927A
公开(公告)日：2001-11-16
申请号：JP2001026024
申请日：2001-02-01
申请人： SAMSUNG ELECTRONICS CO LTD
发明人： RI TEIKO , SAI SHOSHOKU , KIM HONG-KEE , RI TOSHUN , KYO DAIGEN
IPC分类号： H01L21/768 , C08G77/62 , C09D183/00 , C09D183/16 , C23C18/12 , H01L21/3105 , H01L21/312 , H01L21/314 , H01L21/316 , H01L21/762 , H01L21/8234 , H01L21/8242 , H01L23/522 , H01L27/088 , H01L27/108
摘要： PROBLEM TO BE SOLVED: To provide a spin-on-glass compound with high aspect ratio, capable of burying gaps between VLSI wiring layers without any mechanical flattening method and relieving surface discontinuities, wherein hydrosilazane is included for manufacturing the oxide film of a semiconductor device substantially identical with CVD oxide film in characteristic. SOLUTION: The forming method of the silicon oxide film of the semiconductor device where a gap between the wiring layers of a VLSI class with a high aspect ratio can be filled by using spin on glass and a characteristic which is substantially similar to a CVD oxide film is given is supplied. SOG solution whose structural formula is (SiH2NH)n (in formula, (n) is a positive integer), whose weight average molecular weight is 4000 to 8000, whose molecular weight distribution of weight average molecular weight and number average molecular weight is 3.0 to 4.0 and which includes polysilazane is applied to a substrate 10 where trenches 12 are formed on an upper face. Then, a flat first SOG film is formed. The first SOG film is cured in a vapor atmosphere and a first silicon oxide film 13a having the flat surface is formed.

99. 发明专利

JP2001518888A 失效
公开(公告)号：JP2001518888A
公开(公告)日：2001-10-16
申请号：JP54230398
申请日：1998-03-23
IPC分类号： C04B35/56 , C04B35/571 , C04B35/589 , C07F5/02 , C07F7/08 , C07F7/12 , C07F19/00 , C08G77/56 , C08G77/62

100. 发明专利

JP3150754B2 失效
公开(公告)号：JP3150754B2
公开(公告)日：2001-03-26
申请号：JP10692192
申请日：1992-04-24
IPC分类号： C04B35/571 , C04B35/584 , C04B35/589 , C08G77/48 , C08G77/62

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式