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91. 发明专利

JPH06131914A CONDUCTING PASTE AND ITS MANUFACTURE 失效
公开(公告)号：JPH06131914A
公开(公告)日：1994-05-13
申请号：JP30664692
申请日：1992-10-19
申请人： TOKIN CORP
发明人： MURAMATSU RYOJI , YOSHIDA EIKICHI , SATO HITOSHI , WATABE YOHEI , IWATA SHINICHI
IPC分类号： C04B41/88 , C09D5/24 , H01B1/16 , H05K1/09
摘要： PURPOSE:To manufacture the conducting paste capable of forming an electrode pattern having high junction strength and small conductor resistance on a nitride ceramic substrate. CONSTITUTION:The conducting paste is constituted of copper powder, titanium powder, a binder, a solvent, and a titanate coupling agent to manufacture a metallized film electrode pattern on a nitride ceramic substrate. Titanium powder is kneaded and dispersed with a vehicle mixed with the binder and the solvent in advance, then copper powder is added, kneaded, and dispersed.

92. 发明专利

JPH05170551A PART FOR SINTERING AND PRODUCTION OF SINTERED ALUMINUM NITRIDE 失效
公开(公告)号：JPH05170551A
公开(公告)日：1993-07-09
申请号：JP34324391
申请日：1991-12-25
申请人： TOKIN CORP
发明人： IWATA SHINICHI
IPC分类号： C04B35/52 , C04B35/58 , C04B35/581 , C04B35/64 , C04B41/87 , C04B41/88
摘要： PURPOSE:To produce sintered aluminum nitride in large quantities on an industrial scale at a low cost by sintering an AlN compact in a casing made of sintering plates produced by applying a paste containing W and AlN to the surface of graphite plates and sintering the product. CONSTITUTION:Paste 2 is prepared by compounding 100-30wt.% of W powder having particle diameter of =10mum and sintered at 1800-2050 deg.C in nitrogen gas or argon gas to obtain a sintering member. A sintering casing shown in the drawing is formed by using the sintering members. The inner walls of two spaces of the casing have W-l-AlN layers 2. An Al compact 3 is placed in each of two spaces and the sintering casing is heated in nitrogen atmosphere (about 1900 deg.C under 1.1atm) for about 5hr to effect the sintering of the compact.

93. 发明专利

JPH02166353A HEAT EXCHANGER AND CERAMIC SINTERED PIPE 失效
公开(公告)号：JPH02166353A
公开(公告)日：1990-06-27
申请号：JP32048388
申请日：1988-12-21
申请人： TOKIN CORP
发明人： KOGO MASANORI , IWATA SHINICHI
IPC分类号： F24H9/00 , F28F21/00 , F28F21/04 , F28F21/08
摘要： PURPOSE:To prevent a corrosion against hot water with a high acidity and corrosion for a long period of time by a method wherein some metallic heat radiation fins are arranged around a ceramic sintered pipe including an aluminum nitride layer having a specific heat conductivity. CONSTITUTION:A ceramic sintered pipe 1 having an anti-corrosion and a metallic heat conductivity is applied inside a heat exchanger and a metallic covering 2 is applied to an outer circumference of the sintered pipe in order to increase a mechanical strength of the pipe and a brazing of the heat radiation fins 3. The ceramic sintered pipe 1 is made of a high thermal conducting ceramics, such as aluminum nitride with a thermal conductivity of 50W/mK or more. As a base metal of the metallic covering layer 2, a non-electrolytic nickel plated layer is formed to have a thickness of about 5 to 20mum and by an electrolytic plating of copper a layer of 10 to 50mum is formed. In addition, in order to increase an anti-corrosion of the metallic covering layer 2, a non-electrolytic Ni plated layer is applied as the outer-most layer. The metallic heat radiation fins 3 are made of metal having a superior thermal conductivity such as aluminum and copper or the like.

94. 发明专利

JPH01278001A THERMISTOR TEMPERATURE TRANSDUCER STRUCTURE 失效
公开(公告)号：JPH01278001A
公开(公告)日：1989-11-08
申请号：JP10679088
申请日：1988-04-28
申请人： TOKIN CORP
发明人： IWATA SHINICHI
IPC分类号： H01C7/04
摘要： PURPOSE:To provide a thermistor temperature transducer having simplified construction and improved reliability and heat responsibility by using aluminum- nitride-type ceramics for forming a substrate and a container constituting the thermistor temperature transducer. CONSTITUTION:Calcium fluoride (CaF2) as a sintering assisting agent is added in powder of aluminum nitride ceramics (AIN), which is baked in non-oxidizing atmosphere to provide an AIN sintered body. A disk is punched out of the sintered body, and one surface thereof is mirror finished. Then, an electrode film 7 consisting of three layers of It, Pt and Au is formed on the mirror- finished surface of the disk. An SiC sintered body is used as a target and an SiC thin film thermistor is patterned within atmosphere of Ar gas while a substrate 9b is heated, so that a thermistor temperature transducer 8 having the substrate 9b formed of AIN is produced. The AIN substrate is bonded to the end face of an AIN pipe 13b formed of the same material through a low-melting glass of PbO-ZnO-B2O3 type and baked. In this manner, it is possible to simplify the construction of the thermistor temperature transducer while improving reliability and heat responsiveness thereof.

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