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    • 91. 发明专利
    • Manufacture of photovoltaic device
    • 光电器件的制造
    • JPS59195877A
    • 1984-11-07
    • JP7028683
    • 1983-04-20
    • Sanyo Electric Co Ltd
    • KISHI YASUO
    • H01L31/04H01L27/142
    • H01L31/046Y02E10/50
    • PURPOSE:To reduce the space of isolation by laminating and applying a semiconductor film and a second electrode film on a plurality of first electrode films through the same mask, forming a plurality of photoelectric conversion regions, exchanging the mask and applying a connecting electrode film. CONSTITUTION:First electrode films 12a... consisting of a transparent oxidizing electrode material are formed on a glass insulating substrate 10 by using a first mask, semiconductor films 14a..., which have P-I-N junctions and are composed of amorphous silicon, are applied by a second mask 13, and second electrode films 15a... consisting of Al are evaporated by using the second mask 13 as it is, thus forming photoelectric conversion regions 16a.... Connecting electrode films 19ab, 19bc, composed of Ti, etc., are evaporated through a third mask 18. Since the width W3 of the mask section of the third mask 18 can be taken to a wide value, the width W2 of the mask section of the second mask 13 can be set to minimum mask width, and the space of isolation can be reduced.
    • 目的:为了通过相同的掩模在多个第一电极膜上层压和施加半导体膜和第二电极膜以减少隔离空间,形成多个光电转换区域,更换掩模并施加连接电极膜。 构成:通过使用第一掩模在玻璃绝缘基板10上形成由透明氧化电极材料构成的第一电极膜12a ...,被应用于具有PIN结的并且由非晶硅构成的半导体膜14a ... 通过第二掩模13和由Al构成的第二电极膜15a ...通过使用第二掩模13被蒸发,从而形成光电转换区16a ....由Ti构成的连接电极膜19ab,19bc, 通过第三掩模18蒸发。由于第三掩模18的掩模部分的宽度W3可以被取为宽值,所以可以将第二掩模13的掩模部分的宽度W2设置为最小掩模 宽度,隔离空间可以减小。
    • 92. 发明专利
    • Etching method for thin film photosemiconductor layer in photovoltaic device
    • 光电器件薄膜光电子层蚀刻方法
    • JPS59161883A
    • 1984-09-12
    • JP3774883
    • 1983-03-07
    • Sanyo Electric Co Ltd
    • KISHI YASUO
    • H01L31/042H01L21/306H01L31/18
    • H01L31/18
    • PURPOSE:To enable to suppress pin hole being bored at the time of etching by a method wherein a thin film semiconductor layer is etched via the window of a patterned resist layer, after adhering the resist layer. CONSTITUTION:The resist layer 8 is adhered on the semiconductor layer 4 to be etched. Next, the layer 8 is exposed to light via a photo mask 12 placed on a base film 7. At this time, the adhesion force of the layer 8 to the film 7 varies at the exposed part and the unexposed part. As a result, when a resist film 11 wherein the adhesion force between the film 7 at the exposed part and the layer is deteriorated is stripped off from the film 7 side, deteriorated resist layers 8a-8c at the exposed parts remain on the layer 4. Then, the layer 4 is etched with the layers 8a-8c as a mask. At this time, the layers 8a-8c form a perfect mask without exposing the semiconductor layers 4a-4c at the part which should not be etched, and accordingly do not come to bore pin holes in the layers 4a-4c of this part.
    • 目的:通过其中通过图案化的抗蚀剂层的窗口蚀刻薄膜半导体层的方法,在蚀刻之后,在粘附抗蚀剂层之后,能够抑制针孔被钻孔。 构成:将抗蚀剂层8粘附在要蚀刻的半导体层4上。 接下来,层8通过放置在基膜7上的光掩模12曝光。此时,层8对膜7的粘附力在曝光部分和未曝光部分变化。 结果,当从膜7剥离其中暴露部分的膜7与层之间的粘合力劣化的抗蚀剂膜11被剥离时,暴露部分处的劣化的抗蚀剂层8a-8c保留在层4上 然后,以层8a-8c作为掩模蚀刻层4。 此时,层8a-8c形成完美的掩模,而不会使半导体层4a-4c暴露在不被蚀刻的部分,因此不会在该部分的层4a-4c中钻孔。
    • 93. 发明专利
    • INFRARED RAY DETECTOR
    • JPS5882136A
    • 1983-05-17
    • JP18490682
    • 1982-10-20
    • SANYO ELECTRIC CO
    • KUWANO YUKINORINAKANO SHIYOUICHIKISHI YASUOYOKOO TOSHIAKISHIBATA KENICHI
    • G01J5/02G01J5/34G01J5/62
    • PURPOSE:To raise detection accuracy by eliminating shifting due to heat in the relative position by means of making with the same material the vibration material that constitutes an infrared ray passing section and a section that does not pass infrared ray. CONSTITUTION:When piezo electric vibrators 4 and 5 vibrate with specified frequencies, the state that the infrared ray passing section 9 of opposing sections 6 and 7 overlap mutually by opposition and the state that a section 8 where the infrared ray does not pass and the section 9 where infrared ray passes overlap mutually are repeated periodically, and the infrared ray that passes through a convex lens 2 is periodically interrupted. The piezoelectric vibrators 4 and 5 have the same material and the same thermal expansion coefficient, and thereby the relative positions of the opposing sections 6 and 7 do not change even if the environmental temperature changes, and the periodic interruption of infrared ray is assured. Surely and periodically interrupted infrared light is thereby made incident on the infrared ray detection section, making it possible to perform highly accurate infrared ray detection.
    • 94. 发明专利
    • Infrared ray detector
    • 红外雷达探测器
    • JPS5761924A
    • 1982-04-14
    • JP13690680
    • 1980-09-30
    • Sanyo Electric Co Ltd
    • KUWANO YUKINORINAKANO SHIYOUICHIKISHI YASUOYOKOO TOSHIAKISHIBATA KENICHI
    • G01J5/02G01J1/02G01J5/34
    • G01J5/34
    • PURPOSE:To obtain an inexpensive infrared rays detector, by storing an assembly body of a pyroelectric element for infrared rays in a package made of resin. CONSTITUTION:An element composed of a pyroelectric pellet for infrared rays 14 made up by a crystal of lithium tantalate, a surface electrode 15 and a back electrode 16 made up by Ni-Cr vapor deposited film, a metallic supporting stand 17 made of aluminum or phosphor bronze and an electric conductive adhesive 18 made up by silver paste, is stuck to the back lead body composed of a metallic rectangular part 19a and a lead part 19b by an electric conductive adhesive 20. An assembly body of the element is accomodated in a resin package 27 such as polyethylene in the form of putting between it through a surface electrode 21 made of phosphor bronze and having a circular opening 23 at the central part and also, having inclination parts 24a, 24b and an opening 28 of the package 27 is sealed by a resin 30 such as epoxy resin. Infrared rays are made incident from a thin transmission window 29 of the package 27. Hereby, an inexpensive infrared rays detector is obtained.
    • 目的:为了获得便宜的红外线检测器,通过将用于红外线的热电元件的组装体储存在由树脂制成的包装中。 构成:由由钽酸锂的晶体构成的红外线用热电片14,由Ni-Cr气相沉积膜构成的表面电极15和背面电极16构成的元件,由铝制成的金属支架17或 磷青铜和由银膏制成的导电粘合剂18通过导电粘合剂20粘附到由金属矩形部分19a和引线部分19b组成的背部引线体上。元件的组装体被容纳在 通过由磷青铜制成的表面电极21和在中心部分具有圆形开口23并且具有倾斜部分24a,24b和封装27的开口28的形式的聚乙烯树脂封装27, 用诸如环氧树脂的树脂30密封。 红外线从封装27的薄透射窗29入射。由此,获得廉价的红外线检测器。
    • 95. 发明专利
    • Infrared ray sensor
    • 红外线传感器
    • JPS5749825A
    • 1982-03-24
    • JP12637080
    • 1980-09-10
    • Sanyo Electric Co Ltd
    • KISHI YASUO
    • G01J5/02G01J1/02G01J5/34H01L37/02
    • H01L37/02
    • PURPOSE:To increase an S/N radio, by providing an electrode on the entire back surface of a pyroelectric pellet 1 generating electric charges in response to the amount of incident infrared ray, providing electrodes on the inside from the outer edges on the upper surface, and eliminating popcorn noises. CONSTITUTION:The back surface electrode 2 is formed on the entire back surface of the pyroelectric pellet 1 with a thickness of about 50mum formed by lithium tantalate crystal and the like generating the electric charge in response to the variation in the incident infrared ray by vacuum evaporation of nichrome. On the upper surface, two electrodes 3a and 3b, e.g. for sensing the human intrusion, are arranged to face each other. Nichrome is evaporated on the part whose width is (a) from the edges of the inside in their three sides, and lead wires 5a and 5b are provided. When a man moves to the direction of an arrow A, the electric charges generated in the electrodes 3a and 3b are varied, and a signal appears in the lead wires 5a and 5b. If the electrodes 3a and 3b are irradiated by a heating lamp and the like, the equal electric charges are generated in the electrodes 3a and 3b, and the output signal is generated. Thus, the popcorn noises due to the discharge at the time of high electric field generation can be prevented, and the S/N ratio is greatly increased.
    • 目的:为了增加S / N无线电装置,通过在热电粒子1的整个后表面上提供响应于入射的红外线的量产生电荷的电极,在上表面的外边缘的内侧设置电极 ,并消除爆米花噪音。 构成:背面电极2形成在热电沉淀1的整个后表面上,厚度约为50μm,由钽酸锂晶体等形成,响应于通过真空蒸发的入射红外线的变化而产生电荷 的镍铬合金。 在上表面上,两个电极3a和3b,例如, 用于感测人的入侵,被布置为面对彼此。 镍铬合金在其三边的内侧的边缘部分的宽度为(a)的部分蒸发,并且提供导线5a和5b。 当人移动到箭头A的方向时,在电极3a和3b中产生的电荷变化,并且信号出现在引线5a和5b中。 如果电极3a和3b被加热灯等照射,则在电极3a和3b中产生相等的电荷,并且产生输出信号。 因此,可以防止由于高电场产生时的放电引起的爆米花噪声,并且S / N比大大增加。
    • 99. 发明专利
    • SOLAR BATTERY GENERATOR
    • JPH0555618A
    • 1993-03-05
    • JP21736891
    • 1991-08-28
    • SANYO ELECTRIC CO
    • MORISANE MASASHITANAKA HIROYUKIOKADA KOICHIONISHI MICHITOSHIKISHI YASUO
    • E04D1/30E04D13/18H01L31/042H01L31/048
    • PURPOSE:To interconnect numerous solar battery wafers attached to a surface of a flat tile of slate type with little electric loss and also efficiently take out electric power obtained from a plurality of flat tiles shingled on a roof. CONSTITUTION:Crystal solar battery wafers 2 which generate electricity when they receive application of sunlight are laterally arranged in an even number of rows at a lower position when flat tiles are shingled on a roof, while the respective solar battery wafers 2 are electrically connected in series mainly in a lateral direction. The respective solar battery wafers 2 which have been arranged in an even number of rows in a lateral direction are connected in series in a vertical direction only on one side end row, while the remaining wafers 2 are connected in series in a lateral direction and they are alternately connected vertically at each of row ends to have the remaining wafer rows connected in series. A pair of positive and negative output terminals are led out from an optional position of the solar battery wafer row, while further a fixing means for fixing the tile is provided on an upper position of the flat tile.