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91. 发明专利

JPS62131583A COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPS62131583A
公开(公告)日：1987-06-13
申请号：JP27146185
申请日：1985-12-04
申请人： HITACHI LTD
发明人： TAKATANI SHINICHIRO , AIDA TOSHIYUKI , SHIGETA JUNJI
IPC分类号： H01L29/872 , H01L21/338 , H01L29/47 , H01L29/80 , H01L29/812
摘要： PURPOSE:To obtain a high speed element characterized by high heat resistance property, low gate wiring resistance, small dispersion in performance and good reproducibility, by using Re as a Schottky material of a compound semiconductor. CONSTITUTION:On a semi-insulating GaAs substrate 1, an ion implanting active layer 2 is formed. Then, an Re film 3 is deposited on the substrate 1 by an electron-beam vacuum evaporating method. Thereafter a desired gate pattern 4 comprising photoresist is formed. The Re film 3 is finely machined by a dry etching method. The photoresist layer 4 is removed. With the Re gate electrode 3 as a mask, ions are implanted, and an N layer 5 is formed. Thereafter, the active layer 2 and the N layer 5 are activated by annealing. Finally, source and drain electrodes 6 are formed.

92. 发明专利

JPS6298672A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPS6298672A
公开(公告)日：1987-05-08
申请号：JP23734385
申请日：1985-10-25
申请人： HITACHI LTD
发明人： HATTA YASUSHI , MITSUSADA KAZUMICHI , TANAKA HIRONORI , SHIGETA JUNJI , MATSUNAGA NOBUTOSHI , KODERA NOBUO , HASHIMOTO TETSUKAZU
IPC分类号： H01L27/088 , H01L21/337 , H01L21/338 , H01L21/8236 , H01L27/06 , H01L29/80 , H01L29/808 , H01L29/812
摘要： PURPOSE:To prevent the change of the power consumption of a field effect transistor or reduce power consumption thereof by setting the field effect transistor controlling currents by the elongation of a depletion layer so that drain currents are not altered or drain currents are minimized even when a junction temperature is elevated. CONSTITUTION:An inverter circuit is constituted of a depletion type (D type) MESFET Qd and an enhancement type (E type) MESFET Qe. the MESFET Qd is composed of an n-type semiconductor region 2A in low concentration, a gate electrode 3 shaped to the main surface of the region 2A and a pair of n type semiconductor regions 4 in high concentration continuously formed to the semiconductor region 2A. The MESFET Qe is organized by an n-type semiconductor region 2B in low concentration, a gate electrode 3 shaped to the main surface of the region 2B and a pair of n type semiconductor regions 4 in high concentration connected to the semiconductor region 2B. The MESFET Qd for the inverter circuit is constituted of threshold voltage Vth where drain currents Ids (currents flowing between a source and a drain in the MESFET Qd) do not alter or reduce even when a junction temperature Tj is elevated.

93. 发明专利

JPS61168334A SQUID MAGNETIC FLUX METER 失效
公开(公告)号：JPS61168334A
公开(公告)日：1986-07-30
申请号：JP1004986
申请日：1986-01-22
申请人： HITACHI LTD
发明人： SHIGETA JUNJI
IPC分类号： A61B5/04 , A61B5/05 , G01R33/035

94. 发明专利

JPS6195569A Manufacture of compound semiconductor integrated circuit 失效
标题翻译：复合半导体集成电路的制造
公开(公告)号：JPS6195569A
公开(公告)日：1986-05-14
申请号：JP21613884
申请日：1984-10-17
申请人： Hitachi Ltd
发明人： SHIGETA JUNJI , MIYAZAKI MASARU
IPC分类号： H01L27/095 , H01L21/822 , H01L27/04 , H01L29/80
CPC分类号： H01L29/80
摘要： PURPOSE:To prevent generation of frame breaking layer of elements other than MESFET by deposition a gate metal after forming a protection film to the element which does not require gate metals such as resistor, capacitor, etc. CONSTITUTION:A channel layer 3 for MESFET and channel layer 3' for resistance are formed by ion implantation method to a semi-insulated GaAs substrate 1 with a photo resist 2 uses as the mask. A protection film 8 SiO2 is deposited to the entire part of wafer, it is then annealed for activation of dopant and SiO2 is not removed and is left to the area other than MESFET. Thereafter, a gate metal 4 is deposited and unwanted gate metal is removed by dry etching. The ion implantation is then carried out with the photo resist 2 and gate electrode 4 used as the mask as in the case of existing device. Thereby, a source drain region including a large amount of dopant can be formed and a source drain electrode 6 can also be formed.
摘要翻译：目的：通过在不需要诸如电阻器，电容器等栅极金属的元件形成保护膜之后，通过沉积栅极金属来防止MESFET以外的元件产生框架断裂层。构成：用于MESFET的沟道层3和通过离子注入法将光电抗蚀剂2用作掩模的半绝缘GaAs衬底1形成用于电阻的沟道层3'。保护膜8SiO 2沉积到晶片的整个部分，然后将其退火以激活掺杂剂，并且SiO 2不被去除并留在除了MESFET之外的区域。此后，沉积栅极金属4，并通过干蚀刻去除不需要的栅极金属。然后与现有装置的情况一样，将光电抗蚀剂2和栅电极4用作掩模，然后进行离子注入。因此，可以形成包括大量掺杂剂的源极漏极区域，并且还可以形成源极漏极电极6。

95. 发明专利

JP2001006998A PATTERN ALIGNER 失效
公开(公告)号：JP2001006998A
公开(公告)日：2001-01-12
申请号：JP17505999
申请日：1999-06-22
申请人： HITACHI LTD
发明人： KOMINAMI SHINYA , SHIGETA JUNJI
IPC分类号： H01L21/68 , G03F9/00 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To make the crystal orientation of a wafer accurately detectable by detecting the direction of the orientation flat surface of the wafer, based on the shape of the part of a detecting light reflecting mirror not exposed to the detecting light made incident by the orientation flat of the wafer due to the wafer. SOLUTION: A pattern aligner is provided with an orientation flat detecting light source 4 composed of an He-Ne laser, and a orientation flat reflection detector 6 for detecting the orientation flat surface of a wafer 1. The aligner is also provided with a detecting light reflecting mirror 4 which reflects the orientation flat detecting light 7 emitted from the light source as orientation flat detecting reflected light 8 at a position including the portion under the orientation flat surface 2 and its vicinity. The horizontal rotational angle of a wafer chuck 3 is adjusted based on the shape of the part of the mirror 4 not exposed to the orientation flat detecting light 7 due to the wafer 1.

96. 发明专利

JPH11340194A METHOD FOR DRY-ETCHING AND SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH11340194A
公开(公告)日：1999-12-10
申请号：JP14082998
申请日：1998-05-22
申请人： HITACHI LTD
发明人： SHINODA KAZUNORI , UCHIYAMA HIROYUKI , SHIGETA JUNJI
IPC分类号： H01L21/302 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a work surface with less damage by, when etching is performed with the plasma of the mixed gas containing hydrocarbon gas as an etchant, mixing the mixed gas with the gas of molecule comprising independent or a plurality of phosphorus atoms. SOLUTION: On an n-type InP substrate 2, an n-type InP buffer layer 4, an undope multiple quantum well active layer 5, a p-type InP clad layer 6, and a p-type InGaAs contact layer 7 are sequentially formed by organic metal vapor-phase growth method. Then the wafer is carried in above a cathode electrode of an etching device of parallel-flat type electrode structure. Then, the mixed gas of ethane, hydrogen, argon, and phosphin (mixing ratio 4:10:1:1) is guided into an etching processing device, and at gas pressure 80 mT, such high-frequency electric power 300 W as with an electrode provided with a sample as a cathode is supplied for grow discharge. Thus, reactive ion etching is performed to form a step of about 3 micron on the substrate.

97. 发明专利

JPH1195068A OPTICAL MODULE MOUNTING BOARD 失效
公开(公告)号：JPH1195068A
公开(公告)日：1999-04-09
申请号：JP25045097
申请日：1997-09-16
申请人： HITACHI LTD , REAL WORLD COMPUTING PARTNERSH
发明人： SHIGETA JUNJI , NISHIMURA SHINJI , INOUE HIROAKI
IPC分类号： G02B6/42 , G02B7/00 , H01L31/0232 , H01L33/48 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To freely determine the distributed positions of optical fibers without coming in contact with heating parts such as LSIs by distributing the optical fibers, connected to optical modules so as to transmit optical signals, on a different face (back face) from an LSI mounted face (surface). SOLUTION: LSIs 2 are arranged between transmitting optical modules 3 and receiving optical modules 4, and optical fiber connectors 6. The transmitting optical modules 3, receiving optical modules 4, optical fiber connectors 6 and optical fibers 5 are respectively mounted on the opposite face (back face) to the LSIs 2 of a printed board 1. It is therefore so constituted that heating parts such as the LSIs 2 do not exist between the optical fiber connectors 6 and the transmitting optical modules 3 and receiving optical modules 4, so that the optical fibers 5 can be distributed in a free path such as a shortest path.

98. 发明专利

JPH10239549A LIGHT-POLARITON CONVERSION ELEMENT, AND DEVICE USING IT 失效
公开(公告)号：JPH10239549A
公开(公告)日：1998-09-11
申请号：JP4754697
申请日：1997-03-03
申请人： HITACHI LTD
发明人： KATSUYAMA TOSHIO , SHIRAI MASATAKA , HOSOMI KAZUHIKO , HIRUMA TAKEYUKI , SHIGETA JUNJI
IPC分类号： G02B6/14 , G02B6/12 , G02B6/26 , H01S3/00 , H01S3/06
摘要： PROBLEM TO BE SOLVED: To connect an optical element and a polariton element efficiently by embedding at least a part of the end part of a polariton waveguide smaller in diameter than an optical waveguide, in the end part of the optical waveguide. SOLUTION: The whole end part of a polariton waveguide 2 of circular cross section smaller in diameter than an optical waveguide 1 of circular cross section is embedded in the end part of the optical waveguide 1, and a center axis 1a of the optical waveguide 1 and a center axis 2a of the waveguide 2 in a conversion part 3 where the optical waveguide 1 and the waveguide 2 exist coincide with each other. When light wave propagated from the left side reaches the conversion part 3, the light wave resonantly excites an exciton in the waveguide 2, and this exciton and light are coupled to generate polariton. Conversion from the light wave to polariton is gradually generated in the conversion part 3 and completed before reaching an area where the optical waveguide 1 disappears and only the waveguide 2 exists. The generated polariton is then propagated in the waveguide 2 and led to the right. As a result, efficient connection of the optical waveguide 1 and waveguide 2 can be obtained.

99. 发明专利

JPH10214981A OPTICAL SOCKET 失效
公开(公告)号：JPH10214981A
公开(公告)日：1998-08-11
申请号：JP1802697
申请日：1997-01-31
申请人： HITACHI LTD , GIJUTSU KENKYU KUMIAI SHINJOHO
发明人： NISHIMURA SHINJI , INOUE HIROAKI , SHIGETA JUNJI
IPC分类号： G02B6/42 , H01L31/0232 , H01L33/00 , H01L33/62 , H01S5/00 , H04B10/27 , H04B10/80 , H01S3/18 , H04B10/02
摘要： PROBLEM TO BE SOLVED: To realize an optical socket which can shorten an electric wiring length, which is favorable for the high band of a signal, which can reduce a band limitation cause due to a pin bottleneck with reference to a replacement function desiring a high-speed processing operation, whose versatility as a replacement element is high and which is low-cost. SOLUTION: A photodetector 14 for data transmission-reception, a semiconductor laser 15, a control circuit for them, an electronic circuit which shares a replacement function and space optical-path changeover-type switches 18, 19 are mounted inside an IC socket 11a for electronic-circuit mounting, and the signal processing capability of an optical socket is intensified. A data output from the electronic circuit is converted into a light signal by a signal conversion immediately after a pin so as to be output to optical fibers 12.

100. 发明专利

JPH09129944A GALVANOMAGNETIC DEVICE 失效
公开(公告)号：JPH09129944A
公开(公告)日：1997-05-16
申请号：JP28288495
申请日：1995-10-31
申请人： HITACHI LTD
发明人： SHIGETA JUNJI
IPC分类号： G01R33/07 , G01R33/09 , H01L43/02
摘要： PROBLEM TO BE SOLVED: To increase the density of the magnetic flux impressed upon a magnetic flux sensing element by boring a hole aligned with the sensing element into a substrate on which the sensing element is formed and burying a material having high permeability in the hole. SOLUTION: After an etching stopper layer 9 is formed on a substrate 8, a Hall element 10 is formed on the layer 9. Then wiring 11, a first surface protective film 12 composed of SiO2 , and a second surface protective film 13 composed of a polyimide film are formed. After the film 13 is formed, an opening 16 is formed by patterning and etching the film 13 so that the opening 16 can be aligned with the Hall element 10 and another opening 17 is formed into the substrate 8. Then, after both surfaces of a wafer are coated with Ni films 18 and the surface of the films 18 are coated with a photoresist 19 except the openings 16 and 17, the openings 16 and 17 are plated with permalloy 20 having high permeability by using the Ni films 18 as electrodes. When the openings are formed into the substrate and surface protective film and a high-permeability material is buried in the openings for converging magnetic fluxes, and then, the front ends of the openings are made thinner by narrowing the gap between the corresponding parts of the openings, the density of magnetic fluxes impressed upon a magnetic flux sensing element can be increased.

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